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1
US2020279880A1
FLIP-CHIP SAMPLE IMAGING DEVICES WITH SELF-ALIGNING LID
Publication/Patent Number: US2020279880A1 Publication Date: 2020-09-03 Application Number: 16/290,832 Filing Date: 2019-03-01 Inventor: Zhang, Ming   Qian, Yin   Miao, Chia-chun   Tai dyson h   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.
2
US10687003B2
Linear-logarithmic image sensor
Publication/Patent Number: US10687003B2 Publication Date: 2020-06-16 Application Number: 15/228,874 Filing Date: 2016-08-04 Inventor: Mabuchi, Keiji   Tai dyson h   Cellek, Oray Orkun   Mao, Duli   Manabe, Sohei   Assignee: OmniVision Technologies, Inc.   IPC: H04N5/355 Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.
3
US10739646B1
Liquid crystal on silicon device mirror metal process
Publication/Patent Number: US10739646B1 Publication Date: 2020-08-11 Application Number: 16/399,373 Filing Date: 2019-04-30 Inventor: Zhang, Ming   Qian, Yin   Weng, Libo   Tai dyson h   Liu, Chia-ying   Liu, Chia-jung   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/1337 Abstract: A reflective semiconductor device includes integrated circuitry disposed in a semiconductor layer. A first plurality of mirrors is formed in a mirror layer over the semiconductor layer, and each of the first plurality of mirrors is spaced apart from one another by at least a uniform width. A thin dielectric film layer covers sidewalls of the first plurality of mirrors and the semiconductor layer in the regions between the spaced apart first plurality of mirrors. A second plurality of mirrors are formed in the mirror layer between the thin dielectric film layer covered sidewalls of the first plurality of mirrors and over the thin dielectric film layer covering the semiconductor layer. Each one of the first and second plurality of mirrors has the uniform width, and is coupled to the integrated circuitry disposed in the semiconductor layer.
4
US10566364B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10566364B2 Publication Date: 2020-02-18 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai dyson h   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
5
US10761385B2
Liquid crystal on silicon panel having less diffraction
Publication/Patent Number: US10761385B2 Publication Date: 2020-09-01 Application Number: 15/852,313 Filing Date: 2017-12-22 Inventor: Zhang, Ming   Weng, Libo   Zhao, Cheng   Qian, Yin   Miao, Chia-chun   Lin, Zhiqiang   Tai dyson h   Assignee: OmniVision Technologies, Inc.   IPC: G02F1/1362 Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.
6
US2020235158A1
GATE MODULATION WITH INDUCTOR
Publication/Patent Number: US2020235158A1 Publication Date: 2020-07-23 Application Number: 16/255,194 Filing Date: 2019-01-23 Inventor: Yi, Xianmin   Yao, Jingming   Cizdziel, Philip   Webster, Eric   Mao, Duli   Lin, Zhiqiang   Landgraf, Jens   Mabuchi, Keiji   Johnson, Kevin   Manabe, Sohei   Tai dyson h   Grant, Lindsay   Fowler, Boyd   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
7
TWI647957B
Image sensor with asymmetric-microlens phase-detection auto-focus (pdaf) detectors, associated pdaf imaging system, and associated method
Publication/Patent Number: TWI647957B Publication Date: 2019-01-11 Application Number: 106131463 Filing Date: 2017-09-13 Inventor: Qian, Yin   Lu, Chen Wei   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H04N5/225 Abstract: A PDAF imaging system includes an image sensor and an image data processing unit. The image sensor has an asymmetric-microlens PDAF detector that includes: (a) a plurality of pixels forming a sub-array having at least two rows and two columns, and (b) a microlens located above each of the plurality of pixels and being rotationally asymmetric about an axis perpendicular to the sub-array. The axis intersects a local extremum of a top surface of the microlens. The image data processing unit is capable of receiving electrical signals from each of the plurality of pixels and generating a PDAF signal from the received electrical signals. A method for forming a gull-wing microlens includes forming, on a substrate, a plate having a hole therein. The method also includes reflowing the plate.
8
TWI674668B
Cross talk reduction for high dynamic range image sensors
Publication/Patent Number: TWI674668B Publication Date: 2019-10-11 Application Number: 107104599 Filing Date: 2018-02-09 Inventor: Watanabe, Kazufumi   Hsiung, Chih-wei   Grant, Lindsay   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
9
TW201935672A
Cross talk reduction for high dynamic range image sensors
Publication/Patent Number: TW201935672A Publication Date: 2019-09-01 Application Number: 107104599 Filing Date: 2018-02-09 Inventor: Watanabe, Kazufumi   Hsiung, Chih-wei   Grant, Lindsay   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
10
TWI647858B
Apparatus and method for single-photon avalanche-photodiode detectors with reduced dark count rate
Publication/Patent Number: TWI647858B Publication Date: 2019-01-11 Application Number: 106134257 Filing Date: 2017-10-03 Inventor: Chen, Gang   Mao, Duli   Venezia, Vincent   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L31/107 Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.
11
US2019305027A1
INTERCONNECT LAYER CONTACT AND METHOD FOR IMPROVED PACKAGED INTEGRATED CIRCUIT RELIABILITY
Publication/Patent Number: US2019305027A1 Publication Date: 2019-10-03 Application Number: 15/937,742 Filing Date: 2018-03-27 Inventor: Qian, Yin   Miao, Chia-chun   Zhang, Ming   Tai dyson h   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.
12
TW201943049A
Method of forming a packaged array and a photosensor integrated circuit
Publication/Patent Number: TW201943049A Publication Date: 2019-11-01 Application Number: 108103353 Filing Date: 2019-01-29 Inventor: Zhang, Ming   Qian, Yin   Miao, Chia-chun   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L21/56 Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.
13
TW201933594A
Photosensor array integrated circuit and method for fabricating the same
Publication/Patent Number: TW201933594A Publication Date: 2019-08-16 Application Number: 107144575 Filing Date: 2018-12-11 Inventor: Wang, Xin   Mao, Duli   Yang, Dajiang   Tai dyson h   Ma, Si-guang   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A method for fabricating a photosensor array integrated circuit includes forming an isolation trench by a method comprising depositing a hard mask layer on a [110]-oriented single-crystal silicon substrate wafer, depositing, exposing, and developing a photoresist on the hard mask layer to define photoresist openings of locations for the trenches, dry plasma etching through the photoresist openings to form openings in the hard mask layer of locations for the trenches, and performing an anisotropic wet etch through the openings in the hard mask layer. In particular embodiments, the trenches are lined with P-type silicon, a silicon dioxide dielectric, and an additional oxide layer before being filled with tungsten.
14
TWI648849B
Image sensor with inverted source follower
Publication/Patent Number: TWI648849B Publication Date: 2019-01-21 Application Number: 106144801 Filing Date: 2017-12-20 Inventor: Chen, Gang   Mao, Duli   Venezia, Vincent   Yang, Dajiang   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a photodiode disposed in a first semiconductor material and a floating diffusion disposed proximate to the photodiode in the first semiconductor material. A source follower transistor is disposed in part in a second semiconductor material and includes: a first doped region, a third doped region, and a second doped region with an opposite polarity as the first doped region and the third doped region, and a gate electrode coupled to the floating diffusion and disposed in the first semiconductor material and aligned with the second doped region in the second semiconductor material of the source follower transistor.
15
US10269850B2
Biased deep trench isolation
Publication/Patent Number: US10269850B2 Publication Date: 2019-04-23 Application Number: 15/717,047 Filing Date: 2017-09-27 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai dyson h   Ma, Yi   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
16
TWI672805B
Backside illuminated image sensor with improved contact area
Publication/Patent Number: TWI672805B Publication Date: 2019-09-21 Application Number: 107104478 Filing Date: 2018-02-08 Inventor: Ye, Jing   Chen, Gang   Yang, Cunyu   Tai dyson h   Xing, Jiaming   Gao, Xi-feng   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
17
TW201935675A
Source follower device for enhanced image sensor performance
Publication/Patent Number: TW201935675A Publication Date: 2019-09-01 Application Number: 107141792 Filing Date: 2018-11-23 Inventor: Jung, Young-woo   Watanabe, Kazufumi   Hsiung, Chih-wei   Grant, Lindsay   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H04N5/3745 Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
18
TW201931582A
Trench isolation for image sensors
Publication/Patent Number: TW201931582A Publication Date: 2019-08-01 Application Number: 107135458 Filing Date: 2018-10-08 Inventor: Zheng, Wei   Jung, Young-woo   Venezia, Vincent   Grant, Lindsay   Tai dyson h   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/148 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.
19
TWI677086B
Method of a pixel array fabrication
Publication/Patent Number: TWI677086B Publication Date: 2019-11-11 Application Number: 108103236 Filing Date: 2019-01-29 Inventor: Watanabe, Kazufumi   Hsiung, Chih-wei   Tai dyson h   Grant, Lindsay Alexander   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
20
US10312391B2
Apparatus and method for single-photon avalanche-photodiode detectors with reduced dark count rate
Publication/Patent Number: US10312391B2 Publication Date: 2019-06-04 Application Number: 15/285,201 Filing Date: 2016-10-04 Inventor: Chen, Gang   Mao, Duli   Venezia, Vincent   Tai dyson h   Zhang, Bowei   Assignee: OmniVision Technologies, Inc.   IPC: H01L31/0352 Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.