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1 US10734419B2
Imaging device with uniform photosensitive region array
Publication/Patent Number: US10734419B2 Publication Date: 2020-08-04 Application Number: 16/364,478 Filing Date: 2019-03-26 Inventor: Takahashi seiji   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor including a first and second pair of photodetectors. The pixel sensor includes the first and second pair of photodetectors in a semiconductor substrate. The first pair of photodetectors are reflection symmetric with respect to a first line positioned at a midpoint between the first pair of photodetectors. The second pair of photodetectors are reflection symmetric with respect to a second line that intersects the first line at a center point. A first plurality of transistors overlying the semiconductor substrate laterally offset the first pair of photodetectors. A second plurality of transistors overlying the semiconductor substrate laterally offset the first plurality of transistors. The first and second pair of photodetectors are laterally between the first and second plurality of transistors. The first and second plurality of transistors are point symmetric with respect to the center point.
2 US2020135779A1
IMAGING DEVICE WITH UNIFORM PHOTOSENSITVIE REGION ARRAY
Publication/Patent Number: US2020135779A1 Publication Date: 2020-04-30 Application Number: 16/364,478 Filing Date: 2019-03-26 Inventor: Takahashi seiji   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor including a first and second pair of photodetectors. The pixel sensor includes the first and second pair of photodetectors in a semiconductor substrate. The first pair of photodetectors are reflection symmetric with respect to a first line positioned at a midpoint between the first pair of photodetectors. The second pair of photodetectors are reflection symmetric with respect to a second line that intersects the first line at a center point. A first plurality of transistors overlying the semiconductor substrate laterally offset the first pair of photodetectors. A second plurality of transistors overlying the semiconductor substrate laterally offset the first plurality of transistors. The first and second pair of photodetectors are laterally between the first and second plurality of transistors. The first and second plurality of transistors are point symmetric with respect to the center point.
3 US2020266223A1
LOW NOISE VERTICAL GATE DEVICE STRUCTURE
Publication/Patent Number: US2020266223A1 Publication Date: 2020-08-20 Application Number: 16/547,739 Filing Date: 2019-08-22 Inventor: Takahashi seiji   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a photodetector disposed in a semiconductor substrate. A floating diffusion node is disposed in the semiconductor substrate and is above the photodetector. A transfer gate electrode overlies the photodetector. The transfer gate electrode has a top conductive body overlying a top surface of the semiconductor substrate and a bottom conductive body extending from the top conductive body to below the floating diffusion node. A portion of the top conductive body directly overlies the floating diffusion node. A first sidewall of the top conductive body directly overlies the bottom conductive body.
4 US2020266229A1
LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
Publication/Patent Number: US2020266229A1 Publication Date: 2020-08-20 Application Number: 16/526,030 Filing Date: 2019-07-30 Inventor: Takahashi seiji   Sze, Jhy-jyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.
5 US2020172032A1
ON-VEHICLE POWER SUPPLY CIRCUIT AND ON-VEHICLE POWER SUPPLY APPARATUS
Publication/Patent Number: US2020172032A1 Publication Date: 2020-06-04 Application Number: 16/621,802 Filing Date: 2018-06-08 Inventor: Kawamura, Ibuki   Kawakami, Takafumi   Takahashi seiji   Assignee: AutoNetworks Technologies, Ltd.   Sumitomo Wiring Systems, Ltd.   Sumitomo Electric Industries, Ltd.   IPC: B60R16/03 Abstract: An on-vehicle power supply circuit includes a first inner power supply unit that supplies power to a control unit based on power supplied from a first power storage unit, a second inner power supply unit that supplies power to the control unit based on power supplied from a second power storage unit, and an operation voltage adjustment unit. The operation voltage adjustment unit outputs an operation voltage to the control unit based on power from the second inner power supply unit when power supply from the second inner power supply unit is in a normal state, and outputs an operation voltage to the control unit based on power from the first inner power supply unit when power supply from the second inner power supply unit is not in a normal state.
6 US2020098798A1
PIXEL DEVICE ON DEEP TRENCH ISOLATION (DTI) STRUCTURE FOR IMAGE SENSOR
Publication/Patent Number: US2020098798A1 Publication Date: 2020-03-26 Application Number: 16/194,663 Filing Date: 2018-11-19 Inventor: Takahashi seiji   Sze, Jhy-jyi   Chen, Tzu-hsiang   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure relates to a CMOS image sensor having a pixel device on a deep trench isolation (DTI) structure, and an associated method of formation. In some embodiments, a deep trench isolation (DTI) structure is disposed at a peripheral of a pixel region, extending from a back-side of the substrate to a position within the substrate. A pixel device is disposed at the front-side of the substrate directly overlying the DTI structure. The pixel device comprises a pair of source/drain (S/D) regions disposed within the substrate and reaching on a top surface of the DTI structure. By forming the disclosed pixel device directly overlying the DTI structure to form a SOI device structure, short channel effect is reduced because of the room for pixel device and also because the insulation layer underneath the pixel device. Thus higher device performance can be realized.
7 US10530250B2
Multiphase converter
Publication/Patent Number: US10530250B2 Publication Date: 2020-01-07 Application Number: 15/767,170 Filing Date: 2016-08-31 Inventor: Tsutsui, Shinsuke   Takahashi seiji   Itou, Takanori   Assignee: AutoNetworks Technologies, Ltd.   Sumitomo Wiring Systems, Ltd.   Sumitomo Electric Industries, Ltd.   IPC: H02M3/155 Abstract: Provided is a multiphase converter having a plurality of voltage conversion units, and is configured to protect the faulty phase and continue driving using another phase when an abnormality occurs in any phase. A DC-DC converter includes a plurality of voltage conversion units that are in parallel between an input-side conductive path and an output-side conductive path. A control unit subjects the plurality of voltage conversion units to a test operation in which a duty ratio of a PWM signal for each voltage conversion unit is changed. The control unit identifies an abnormal voltage conversion unit based on at least one of the states of the electric current, the voltage, and the temperature of the multiphase conversion unit during this test period, and causes the remaining voltage conversion unit other than the identified abnormal voltage conversion unit to perform voltage conversion.
8 EP3309257B1
PRODUCTION METHOD FOR POLYISOPRENOID, VECTOR, TRANSGENIC PLANT, PRODUCTION METHOD FOR PNEUMATIC TIRE, AND PRODUCTION METHOD FOR RUBBER PRODUCT
Publication/Patent Number: EP3309257B1 Publication Date: 2020-08-05 Application Number: 16817926.5 Filing Date: 2016-06-28 Inventor: Yamaguchi, Haruhiko   Inoue, Yukino   Fushihara, Kazuhisa   Takahashi seiji   Yamashita, Satoshi   Nakayama, Toru   Assignee: Sumitomo Rubber Industries, Ltd.   Tohoku University   IPC: C12P5/02
9 US2020119144A1
SEMICONDUCTOR DEVICE WITH LOW RANDOM TELEGRAPH SIGNAL NOISE
Publication/Patent Number: US2020119144A1 Publication Date: 2020-04-16 Application Number: 16/716,299 Filing Date: 2019-12-16 Inventor: Chou, Kuo-yu   Takahashi seiji   Yeh, Shang-fu   Lee, Chih-lin   Yin, Chin   Chao, Calvin Yi-ping   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H01L29/06 Abstract: A semiconductor device comprises a source/drain diffusion area, and a first doped region. The source/drain diffusion area is defined between a first isolation structure and a second isolation structure. The source/drain diffusion area includes a source region, a drain region, and a device channel. The device channel is between the source region and the drain region. The first doped region is disposed along a first junction between the device channel and the first isolation structure in a direction from the source region to the drain region. The first doped region is separated from at least one of the source region and the drain region, and has a dopant concentration higher than that of the device channel. The semiconductor device of the present disclosure has low random telegraph signal noise and fewer defects.
10 US2020135844A1
HIGH DENSITY MIM CAPACITOR STRUCTURE
Publication/Patent Number: US2020135844A1 Publication Date: 2020-04-30 Application Number: 16/365,904 Filing Date: 2019-03-27 Inventor: Takahashi seiji   Wang, Chen-jong   Yaung, Dun-nian   Lin, Jung-i   Sze, Jhy-jyi   Kalnitsky, Alexander   Huang, Yimin   Liao, King   Hong, Shen-hui   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L49/02 Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.
11 WO2019012576A1
IMAGE PICKUP DEVICE, SURFACE MOUNTING MACHINE, AND INSPECTION DEVICE
Publication/Patent Number: WO2019012576A1 Publication Date: 2019-01-17 Application Number: 2017025119 Filing Date: 2017-07-10 Inventor: Takahashi seiji   Assignee: YAMAHA HATSUDOKI KABUSHIKI KAISHA   IPC: H05K13/08 Abstract: This image pickup device (a component image pickup camera 16 and a control unit 51) is provided with: an image pickup sensor 22 having a plurality of light receiving elements 22A that are two-dimensionally disposed; and the control unit 51. The image pickup mode of the image pickup sensor 22 includes: area sensor mode wherein the image pickup sensor 22 is used as an area sensor; and line sensor mode wherein the image pickup sensor 22 is used as a line sensor by switching the ranges of the light receiving elements 22A to be used in image pickup. The control unit 51 switches, before starting image pickup of a component E, the image pickup mode in accordance with setting made by an operator or switches the image pickup mode by determining the image pickup mode on the basis of at least one condition of the component E, and does not switch the image pickup mode while an image of the component E is being picked up.
12 JP2019033322A
COMMUNICATION DEVICE, CONTROL METHOD OF COMMUNICATION DEVICE, AND PROGRAM
Publication/Patent Number: JP2019033322A Publication Date: 2019-02-28 Application Number: 2017151761 Filing Date: 2017-08-04 Inventor: Takahashi seiji   Assignee: CANON INC   IPC: H04W92/08 Abstract: To make it possible to more simply switch a communication device that connects with an external device.SOLUTION: A communication device includes communication means and control means. The control means determines whether a first signal from an external device is received when communication with the external device is not performed via the communication means, controls the communication means to transmit a second signal if it is determined that the first signal is not received, and controls the communication means to connect with the external device if the first signal is received from the external device in response to the transmission of the second signal.SELECTED DRAWING: Figure 1
13 US2019244242A1
COMMUNICATION APPARATUS, INFORMATION TERMINAL, SYSTEM, METHOD FOR CONTROLLING COMMUNICATION APPARATUS, METHOD FOR CONTROLLING INFORMATION TERMINAL, AND METHOD FOR CONTROLLING SYSTEM
Publication/Patent Number: US2019244242A1 Publication Date: 2019-08-08 Application Number: 16/258,379 Filing Date: 2019-01-25 Inventor: Takahashi seiji   Assignee: CANON KABUSHIKI KAISHA   IPC: G06Q30/00 Abstract: A communication apparatus includes a transmission unit that transmits data to an external apparatus by either a first transmission method for transmitting the data by active scanning or a second transmission method for transmitting the data by passive scanning, and a control unit that, in a case where a number of external apparatuses increases, switches the transmission method of the transmission unit from the first transmission method to the second transmission method, and in a case where the number of external apparatuses decreases, switches the transmission method of the transmission unit from the second transmission method to the first transmission method.
14 JP2019083487A
INFORMATION TERMINAL AND METHOD FOR CONTROLLING THE SAME, PROGRAM, AND STORAGE MEDIUM
Publication/Patent Number: JP2019083487A Publication Date: 2019-05-30 Application Number: 2017211206 Filing Date: 2017-10-31 Inventor: Takahashi seiji   Assignee: CANON INC   IPC: H04W76/10 Abstract: To provide an information terminal that, even when an external device does not correspond to a partial frequency band, can connect to an access point of the external device, and a method for controlling the same, a program, and a storage medium.SOLUTION: An information terminal acquires a first communication parameter for performing wireless communication in a first frequency band with a repeating device and a second communication parameter for performing wireless communication in a second frequency band, determines whether an external device can perform wireless communication in the first frequency band, and when determining that the external device cannot perform wireless communication in the first frequency band, transmits the second communication parameter to the external device by using a second wireless communication unit consuming less power than a first wireless communication unit and transmits, to the external device, a request to establish wireless communication in the second frequency band using the second communication parameter between the external device and relay device, and thereby establishes communication with the external device via the relay device while performing wireless communication in the first frequency band with the relay device using the first wireless communication unit.SELECTED DRAWING: Figure 1
15 JP2019135808A
COMMUNICATION DEVICE, INFORMATION TERMINAL, SYSTEM, COMMUNICATION DEVICE CONTROL METHOD, INFORMATION TERMINAL CONTROL METHOD, SYSTEM CONTROL METHOD, AND PROGRAM
Publication/Patent Number: JP2019135808A Publication Date: 2019-08-15 Application Number: 2018018171 Filing Date: 2018-02-05 Inventor: Takahashi seiji   Assignee: CANON INC   IPC: H04W84/10 Abstract: To suppress a communication load.SOLUTION: The communication apparatus of the present invention includes: transmission means for transmitting data to an external device by any one of transmission methods of a first transmission method for transmitting the data by an active scan method and a second transmission method for transmitting the data by a passive scan method; and control means for controlling the transmission method by the transmission means to switch the transmission method by the transmission means from the first transmission method to the second transmission method when the number of external devices increases and switch from the second transmission method to the first transmission method when the number of external devices decreases.SELECTED DRAWING: Figure 2
16 US2019020835A1
SEMICONDUCTOR STRUCTURE AND OPERATING METHOD FOR IMPROVING CHARGE TRANSFER OF IMAGE SENSOR DEVICE
Publication/Patent Number: US2019020835A1 Publication Date: 2019-01-17 Application Number: 15/650,270 Filing Date: 2017-07-14 Inventor: Takahashi seiji   Sze, Jhy-jyi   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.   IPC: H04N5/359 Abstract: An image sensor semiconductor device includes a semiconductor substrate and a first photodiode disposed in the semiconductor substrate and configured to generate charges in response to radiation. The image sensor semiconductor device also includes a first transistor disposed adjacent to the first photodiode, and a second transistor disposed over the first photodiode, wherein the first transistor and the second transistor are configured to generate at least one electric field to move the charges generated by the first photodiode. The image sensor device further includes a floating diffusion region configured to store the moved charges.
17 US2019308573A1
VEHICLE-MOUNTED POWER SUPPLY DEVICE
Publication/Patent Number: US2019308573A1 Publication Date: 2019-10-10 Application Number: 16/467,552 Filing Date: 2017-11-21 Inventor: Itou, Takanori   Takahashi seiji   Assignee: AutoNetworks Technologies, Ltd.   Sumitomo Wiring Systems, Ltd.   Sumitomo Electric Industries, Ltd.   IPC: B60R16/033 Abstract: Provided is a vehicle-mounted power supply device detecting connection with an external power source and charging a power storage unit by stepping up a supply voltage based on the external power source. A vehicle-mounted power supply device includes an external terminal to which a power supply path from an external power source is connectable, a detection unit detects that the power supply path is connected to the external terminal, and a power supply circuit unit allows for flow of a current from the external terminal side toward the second conduction path side at least when the power supply path is connected to the external terminal. The control unit controls a step-down operation and a step-up operation of the voltage conversion unit, and causes the voltage conversion unit to perform the step-up operation when connection between the external terminal and the power supply path is detected by the detection unit.
18 US201920835A1
SEMICONDUCTOR STRUCTURE AND OPERATING METHOD FOR IMPROVING CHARGE TRANSFER OF IMAGE SENSOR DEVICE
Publication/Patent Number: US201920835A1 Publication Date: 2019-01-17 Application Number: 20/171,565 Filing Date: 2017-07-14 Inventor: Sze, Jhy-jyi   Takahashi seiji   Assignee: Taiwan Semiconductor Manufacturing Company Ltd.   IPC: H04N5/378 Abstract: An image sensor semiconductor device includes a semiconductor substrate and a first photodiode disposed in the semiconductor substrate and configured to generate charges in response to radiation. The image sensor semiconductor device also includes a first transistor disposed adjacent to the first photodiode, and a second transistor disposed over the first photodiode, wherein the first transistor and the second transistor are configured to generate at least one electric field to move the charges generated by the first photodiode. The image sensor device further includes a floating diffusion region configured to store the moved charges.
19 JP2019189757A
ALCOHOL MODIFIED POLYAMIDEIMIDE RESIN, CURABLE RESIN COMPOSITION, AND CURED ARTICLE THEREOF
Publication/Patent Number: JP2019189757A Publication Date: 2019-10-31 Application Number: 2018084010 Filing Date: 2018-04-25 Inventor: Takahashi seiji   Kuwata, Kosuke   Assignee: DIC CORP   IPC: C08G73/14 Abstract: To provide: a curable resin composition containing a polyamideimide resin soluble in a general purpose solvent, and excellent in solvent dilution property and development property, high in storage stability even when blended with a curable resin, and further excellent in adsorptivity; and a cured article capable of producing a cured coated film excellent in adhesiveness by curing the curable resin composition.SOLUTION: There are provided: a manufacturing method of an alcohol modified polyamideimide resin including a step of adding an isocyanurate type polyisocyanate to a tricarboxylic acid anhydride having an aromatic structure in at least two portions and reacting the isocyanurate type polyisocyanate and the tricarboxylic acid anhydride to obtain a polyamideimide resin, and a step of reacting an alcohol compound with the polyamideimide resin; a curable resin composition; and a cured article capable of producing a cured coated film excellent in adhesiveness by curing the curable resin composition.SELECTED DRAWING: Figure 1
20 DE112017006219T5
Fahrzeugmontierte Energieversorgungsvorrichtung
Publication/Patent Number: DE112017006219T5 Publication Date: 2019-08-29 Application Number: 112017006219 Filing Date: 2017-11-21 Inventor: Takahashi seiji   Itou, Takanori   Assignee: Sumitomo Wiring Systems, Ltd.   Sumitomo Electric Industries, Ltd.   AutoNetworks Technologies, Ltd.   IPC: H02M3/155 Abstract: Es wird eine fahrzeugmontierte Energieversorgungsvorrichtung bereitgestellt, die fähig ist, eine Verbindung mit einer externen Energiequelle definitiv zu erfassen und eine Energiespeichereinheit durch Hochsetzen einer Versorgungsspannung auf Basis der externen Energiequelle zu laden. Eine fahrzeugmontierte Energieversorgungsvorrichtung (1) weist auf: einen Außenanschluss (P3), mit dem ein Energieversorgungsweg (Lp) von einer externen Energiequelle (Bp) verbindbar ist, eine Erfassungseinheit (30), die erfasst, dass der Energieversorgungsweg (Lp) mit dem Außenanschluss (P3) verbunden ist, und eine Energieversorgungs-Schaltungseinheit (40), die das Fließen eines Stroms von der Seite des Außenanschlusses (P3) zu der Seite des zweiten Leitungswegs (22) mindestens dann, wenn der Energieversorgungsweg (Lp) mit dem Außenanschluss (P3) verbunden ist, zulässt. Die Steuereinheit (10A) steuert einen Tiefsetzbetrieb und einen Hochsetzbetrieb der Spannungswandlungseinheit (12) und bewirkt, dass die Spannungswandlungseinheit (12) den Hochsetzbetrieb durchführt, wenn durch die Erfassungseinheit (30) eine Verbindung zwischen dem Außenanschluss (P3) und dem Energieversorgungsweg (Lp) erfasst wird.