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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
1
EP3540775B1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: EP3540775B1 Publication Date: 2020-10-28 Application Number: 19156829.4 Filing Date: 2019-02-13 Inventor: Suzuki, Takahiro   Tanaka yoshiei   Tange, Tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146
2
US10777596B2
Imaging apparatus, method of manufacturing the same, and device
Publication/Patent Number: US10777596B2 Publication Date: 2020-09-15 Application Number: 16/137,861 Filing Date: 2018-09-21 Inventor: Hirota, Katsunori   Sasaki, Keiichi   Tange, Tsutomu   Tanaka yoshiei   Ohtani, Akira   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
3
US2020083263A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020083263A1 Publication Date: 2020-03-12 Application Number: 16/556,964 Filing Date: 2019-08-30 Inventor: Tanaka yoshiei   Hirota, Katsunori   Onuki, Yusuke   Tange, Tsutomu   Ogino, Takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.
4
EP3540775A1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: EP3540775A1 Publication Date: 2019-09-18 Application Number: 19156829.4 Filing Date: 2019-02-13 Inventor: Suzuki, Takahiro   Tanaka yoshiei   Tange, Tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging device (1000) includes a substrate including a photoelectric conversion portion (11) and an insulating layer (212) formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
5
US2019280023A1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: US2019280023A1 Publication Date: 2019-09-12 Application Number: 16/275,652 Filing Date: 2019-02-14 Inventor: Suzuki, Takahiro   Tanaka yoshiei   Tange, Tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
6
US2019096946A1
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
Publication/Patent Number: US2019096946A1 Publication Date: 2019-03-28 Application Number: 16/137,861 Filing Date: 2018-09-21 Inventor: Hirota, Katsunori   Sasaki, Keiichi   Tange, Tsutomu   Tanaka yoshiei   Ohtani, Akira   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
7
US201996946A1
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
Publication/Patent Number: US201996946A1 Publication Date: 2019-03-28 Application Number: 20/181,613 Filing Date: 2018-09-21 Inventor: Ohtani, Akira   Sasaki, Keiichi   Hirota, Katsunori   Tange, Tsutomu   Tanaka yoshiei   Assignee: Canon Kabushiki Kaisha   IPC: H01L31/103 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.