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1 | EP3540775B1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: EP3540775B1 | Publication Date: 2020-10-28 | Application Number: 19156829.4 | Filing Date: 2019-02-13 | Inventor： Suzuki, Takahiro Tanaka yoshiei Tange, Tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | ||||
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2 | US10777596B2 |
Imaging apparatus, method of manufacturing the same, and device
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Publication/Patent Number: US10777596B2 | Publication Date: 2020-09-15 | Application Number: 16/137,861 | Filing Date: 2018-09-21 | Inventor： Hirota, Katsunori Sasaki, Keiichi Tange, Tsutomu Tanaka yoshiei Ohtani, Akira | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. | |||
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3 | US2020083263A1 |
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
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Publication/Patent Number: US2020083263A1 | Publication Date: 2020-03-12 | Application Number: 16/556,964 | Filing Date: 2019-08-30 | Inventor： Tanaka yoshiei Hirota, Katsunori Onuki, Yusuke Tange, Tsutomu Ogino, Takumi | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”. | |||
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4 | EP3540775A1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: EP3540775A1 | Publication Date: 2019-09-18 | Application Number: 19156829.4 | Filing Date: 2019-02-13 | Inventor： Suzuki, Takahiro Tanaka yoshiei Tange, Tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging device (1000) includes a substrate including a photoelectric conversion portion (11) and an insulating layer (212) formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part. | |||
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5 | US2019280023A1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: US2019280023A1 | Publication Date: 2019-09-12 | Application Number: 16/275,652 | Filing Date: 2019-02-14 | Inventor： Suzuki, Takahiro Tanaka yoshiei Tange, Tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part. | |||
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6 | US2019096946A1 |
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
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Publication/Patent Number: US2019096946A1 | Publication Date: 2019-03-28 | Application Number: 16/137,861 | Filing Date: 2018-09-21 | Inventor： Hirota, Katsunori Sasaki, Keiichi Tange, Tsutomu Tanaka yoshiei Ohtani, Akira | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. | |||
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7 | US201996946A1 |
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
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Publication/Patent Number: US201996946A1 | Publication Date: 2019-03-28 | Application Number: 20/181,613 | Filing Date: 2018-09-21 | Inventor： Ohtani, Akira Sasaki, Keiichi Hirota, Katsunori Tange, Tsutomu Tanaka yoshiei | Assignee: Canon Kabushiki Kaisha | IPC: H01L31/103 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. |
3.Current Quota