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1 | US2020251518A1 |
SEMICONDUCTOR APPARATUS AND EQUIPMENT
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Publication/Patent Number: US2020251518A1 | Publication Date: 2020-08-06 | Application Number: 16/749,221 | Filing Date: 2020-01-22 | Inventor： Ogino, Takumi Kobayashi, Hiroaki Tange tsutomu Shimizu, Akihiro | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N. | |||
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2 | EP3540775B1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: EP3540775B1 | Publication Date: 2020-10-28 | Application Number: 19156829.4 | Filing Date: 2019-02-13 | Inventor： Suzuki, Takahiro Tanaka, Yoshiei Tange tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | ||||
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3 | US2020286943A1 |
SEMICONDUCTOR APPARATUS AND DEVICE
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Publication/Patent Number: US2020286943A1 | Publication Date: 2020-09-10 | Application Number: 16/803,791 | Filing Date: 2020-02-27 | Inventor： Tange tsutomu Ogino, Takumi Kobayashi, Hiroaki | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension. | |||
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4 | US2020083263A1 |
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
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Publication/Patent Number: US2020083263A1 | Publication Date: 2020-03-12 | Application Number: 16/556,964 | Filing Date: 2019-08-30 | Inventor： Tanaka, Yoshiei Hirota, Katsunori Onuki, Yusuke Tange tsutomu Ogino, Takumi | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”. | |||
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5 | US2020127032A1 |
SEMICONDUCTOR DEVICE, APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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Publication/Patent Number: US2020127032A1 | Publication Date: 2020-04-23 | Application Number: 16/597,973 | Filing Date: 2019-10-10 | Inventor： Ogino, Takumi Ishino, Hideaki Shimizu, Akihiro Hirota, Katsunori Tange tsutomu | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening. | |||
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6 | US10777596B2 |
Imaging apparatus, method of manufacturing the same, and device
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Publication/Patent Number: US10777596B2 | Publication Date: 2020-09-15 | Application Number: 16/137,861 | Filing Date: 2018-09-21 | Inventor： Hirota, Katsunori Sasaki, Keiichi Tange tsutomu Tanaka, Yoshiei Ohtani, Akira | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. | |||
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7 | EP3640988A1 |
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT INCLUDING THE SAME
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Publication/Patent Number: EP3640988A1 | Publication Date: 2020-04-22 | Application Number: 19203195.3 | Filing Date: 2019-10-15 | Inventor： Ogawa, Toshiyuki Suzuki, Sho Okabe, Takehito Yomori, Mitsuhiro Suzuki, Yukinobu Kawano, Akihiro Tange tsutomu | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface. | |||
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8 | US2020127030A1 |
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT INCLUDING THE SAME
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Publication/Patent Number: US2020127030A1 | Publication Date: 2020-04-23 | Application Number: 16/600,753 | Filing Date: 2019-10-14 | Inventor： Ogawa, Toshiyuki Suzuki, Sho Okabe, Takehito Yomori, Mitsuhiro Suzuki, Yukinobu Kawano, Akihiro Tange tsutomu | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface. | |||
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9 | JP2019161216A |
IMAGING APPARATUS, MANUFACTURING METHOD OF THE SAME, AND DEVICE
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Publication/Patent Number: JP2019161216A | Publication Date: 2019-09-19 | Application Number: 2018217521 | Filing Date: 2018-11-20 | Inventor： Hirota, Katsunori Tange tsutomu Tanaka, Yoshie Suzuki, Takahiro | Assignee: CANON INC | IPC: H01L27/146 | Abstract: To provide an advantageous technique for stabilizing characteristics of an imaging apparatus.SOLUTION: The imaging apparatus includes: a substrate having a photoelectric conversion unit; and an insulating layer disposed to cover at least a part of the photoelectric conversion unit. Among silicon atoms contained in at least part of the insulating layer, the number of bonded nitrogen atoms is 1, 2 or 3, and a ratio of silicon atoms which is not bonded with oxygen atoms is 20% or less.SELECTED DRAWING: Figure 3 | |||
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10 | EP3540775A1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: EP3540775A1 | Publication Date: 2019-09-18 | Application Number: 19156829.4 | Filing Date: 2019-02-13 | Inventor： Suzuki, Takahiro Tanaka, Yoshiei Tange tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging device (1000) includes a substrate including a photoelectric conversion portion (11) and an insulating layer (212) formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part. | |||
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11 | US2019280023A1 |
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: US2019280023A1 | Publication Date: 2019-09-12 | Application Number: 16/275,652 | Filing Date: 2019-02-14 | Inventor： Suzuki, Takahiro Tanaka, Yoshiei Tange tsutomu Hirota, Katsunori | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part. | |||
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12 | JP2019083279A |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Publication/Patent Number: JP2019083279A | Publication Date: 2019-05-30 | Application Number: 2017210834 | Filing Date: 2017-10-31 | Inventor： Okabe, Takeshi Kato, Aiko Suzuki, Yukinobu Tange tsutomu | Assignee: CANON INC | IPC: H01L23/532 | Abstract: To provide a semiconductor device that achieves both suppression of abnormal growth of silicide in a contact plug and reduction in contact resistance.SOLUTION: In a manufacturing method of a semiconductor device according to an embodiment, a film containing titanium is formed in a contact hole formed in an insulating film on a semiconductor substrate so as to be in contact with the semiconductor substrate by a CVD method at a first temperature of 610°C or less, and after the film containing titanium is formed, the semiconductor substrate on which the film containing titanium is formed is heat treated at a second temperature higher than the first temperature.SELECTED DRAWING: Figure 2 | |||
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13 | US201996946A1 |
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
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Publication/Patent Number: US201996946A1 | Publication Date: 2019-03-28 | Application Number: 20/181,613 | Filing Date: 2018-09-21 | Inventor： Ohtani, Akira Sasaki, Keiichi Hirota, Katsunori Tange tsutomu Tanaka, Yoshiei | Assignee: Canon Kabushiki Kaisha | IPC: H01L31/103 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. | |||
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14 | US10411058B2 |
Semiconductor apparatus, system, and method of producing semiconductor apparatus
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Publication/Patent Number: US10411058B2 | Publication Date: 2019-09-10 | Application Number: 15/849,229 | Filing Date: 2017-12-20 | Inventor： Tange tsutomu Suzuki, Yukinobu Kato, Aiko Hara, Koji Okabe, Takehito | Assignee: Canon Kabushiki Kaisha | IPC: H01L27/146 | Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness. | |||
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15 | JP2019067826A |
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
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Publication/Patent Number: JP2019067826A | Publication Date: 2019-04-25 | Application Number: 2017188985 | Filing Date: 2017-09-28 | Inventor： Hirota, Katsunori Otani, Akira Sasaki, Keiichi Tange tsutomu Tanaka, Yoshie | Assignee: CANON INC | IPC: H01L31/02 | Abstract: To provide an advantageous technique to improve characteristics of an imaging apparatus.SOLUTION: The imaging apparatus includes: a substrate having a photoelectric conversion unit; and a silicon nitride layer arranged to cover at least a part of the photoelectric conversion unit. The silicon nitride layer contains chlorine, and a N/Si composition ratio of the silicon nitride layer is 1.00 or more and less than 1.33.SELECTED DRAWING: Figure 3 | |||
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16 | US2019096946A1 |
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
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Publication/Patent Number: US2019096946A1 | Publication Date: 2019-03-28 | Application Number: 16/137,861 | Filing Date: 2018-09-21 | Inventor： Hirota, Katsunori Sasaki, Keiichi Tange tsutomu Tanaka, Yoshiei Ohtani, Akira | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L27/146 | Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33. | |||
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17 | US10096545B2 |
Semiconductor apparatus, system, and method of manufacturing semiconductor apparatus
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Publication/Patent Number: US10096545B2 | Publication Date: 2018-10-09 | Application Number: 15/279,135 | Filing Date: 2016-09-28 | Inventor： Kawano, Akihiro Tange tsutomu Ishioka, Masao Tazoe, Koichi | Assignee: Canon Kabushiki Kaisha | IPC: H01L27/146 | Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug. | |||
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18 | US2018182802A1 |
SEMICONDUCTOR APPARATUS, SYSTEM, AND METHOD OF PRODUCING SEMICONDUCTOR APPARATUS
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Publication/Patent Number: US2018182802A1 | Publication Date: 2018-06-28 | Application Number: 15/849,229 | Filing Date: 2017-12-20 | Inventor： Okabe, Takehito Hara, Koji Kato, Aiko Suzuki, Yukinobu Tange tsutomu | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L21/768 | Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness. | |||
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19 | US2017092582A1 |
SEMICONDUCTOR APPARATUS, SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
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Publication/Patent Number: US2017092582A1 | Publication Date: 2017-03-30 | Application Number: 15/279,135 | Filing Date: 2016-09-28 | Inventor： Kawano, Akihiro Tange tsutomu Ishioka, Masao Tazoe, Koichi | Assignee: CANON KABUSHIKI KAISHA | IPC: H01L23/522 | Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug. | |||
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20 | JP2017069430A |
IMAGING DEVICE
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Publication/Patent Number: JP2017069430A | Publication Date: 2017-04-06 | Application Number: 2015194479 | Filing Date: 2015-09-30 | Inventor： Tange tsutomu Kono, Akihiro Ishioka, Masao Tazoe, Koichi | Assignee: CANON INC | IPC: H01L21/768 | Abstract: PROBLEM TO BE SOLVED: To provide an imaging device capable of improving performance of a pixel circuit and a logic circuit.SOLUTION: An imaging device provided with a pixel circuit that generates a pixel signal based on electric charges generated by photoelectric conversion |
3.Current Quota