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1
US2020251518A1
SEMICONDUCTOR APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020251518A1 Publication Date: 2020-08-06 Application Number: 16/749,221 Filing Date: 2020-01-22 Inventor: Ogino, Takumi   Kobayashi, Hiroaki   Tange tsutomu   Shimizu, Akihiro   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N.
2
EP3540775B1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: EP3540775B1 Publication Date: 2020-10-28 Application Number: 19156829.4 Filing Date: 2019-02-13 Inventor: Suzuki, Takahiro   Tanaka, Yoshiei   Tange tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146
3
US2020286943A1
SEMICONDUCTOR APPARATUS AND DEVICE
Publication/Patent Number: US2020286943A1 Publication Date: 2020-09-10 Application Number: 16/803,791 Filing Date: 2020-02-27 Inventor: Tange tsutomu   Ogino, Takumi   Kobayashi, Hiroaki   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A first conductive portion includes a first pad surrounded by a first insulator film in a plane perpendicular to a first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and a first semiconductor layer in the first direction. A second conductive portion includes a second pad surrounded by a second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and a second semiconductor layer in the first direction. The first and the second conductive portions are different in dimension.
4
US2020083263A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020083263A1 Publication Date: 2020-03-12 Application Number: 16/556,964 Filing Date: 2019-08-30 Inventor: Tanaka, Yoshiei   Hirota, Katsunori   Onuki, Yusuke   Tange tsutomu   Ogino, Takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.
5
US2020127032A1
SEMICONDUCTOR DEVICE, APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Publication/Patent Number: US2020127032A1 Publication Date: 2020-04-23 Application Number: 16/597,973 Filing Date: 2019-10-10 Inventor: Ogino, Takumi   Ishino, Hideaki   Shimizu, Akihiro   Hirota, Katsunori   Tange tsutomu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.
6
US10777596B2
Imaging apparatus, method of manufacturing the same, and device
Publication/Patent Number: US10777596B2 Publication Date: 2020-09-15 Application Number: 16/137,861 Filing Date: 2018-09-21 Inventor: Hirota, Katsunori   Sasaki, Keiichi   Tange tsutomu   Tanaka, Yoshiei   Ohtani, Akira   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
7
EP3640988A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT INCLUDING THE SAME
Publication/Patent Number: EP3640988A1 Publication Date: 2020-04-22 Application Number: 19203195.3 Filing Date: 2019-10-15 Inventor: Ogawa, Toshiyuki   Suzuki, Sho   Okabe, Takehito   Yomori, Mitsuhiro   Suzuki, Yukinobu   Kawano, Akihiro   Tange tsutomu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
8
US2020127030A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT INCLUDING THE SAME
Publication/Patent Number: US2020127030A1 Publication Date: 2020-04-23 Application Number: 16/600,753 Filing Date: 2019-10-14 Inventor: Ogawa, Toshiyuki   Suzuki, Sho   Okabe, Takehito   Yomori, Mitsuhiro   Suzuki, Yukinobu   Kawano, Akihiro   Tange tsutomu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
9
JP2019161216A
IMAGING APPARATUS, MANUFACTURING METHOD OF THE SAME, AND DEVICE
Publication/Patent Number: JP2019161216A Publication Date: 2019-09-19 Application Number: 2018217521 Filing Date: 2018-11-20 Inventor: Hirota, Katsunori   Tange tsutomu   Tanaka, Yoshie   Suzuki, Takahiro   Assignee: CANON INC   IPC: H01L27/146 Abstract: To provide an advantageous technique for stabilizing characteristics of an imaging apparatus.SOLUTION: The imaging apparatus includes: a substrate having a photoelectric conversion unit; and an insulating layer disposed to cover at least a part of the photoelectric conversion unit. Among silicon atoms contained in at least part of the insulating layer, the number of bonded nitrogen atoms is 1, 2 or 3, and a ratio of silicon atoms which is not bonded with oxygen atoms is 20% or less.SELECTED DRAWING: Figure 3
10
EP3540775A1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: EP3540775A1 Publication Date: 2019-09-18 Application Number: 19156829.4 Filing Date: 2019-02-13 Inventor: Suzuki, Takahiro   Tanaka, Yoshiei   Tange tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging device (1000) includes a substrate including a photoelectric conversion portion (11) and an insulating layer (212) formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
11
US2019280023A1
IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: US2019280023A1 Publication Date: 2019-09-12 Application Number: 16/275,652 Filing Date: 2019-02-14 Inventor: Suzuki, Takahiro   Tanaka, Yoshiei   Tange tsutomu   Hirota, Katsunori   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
12
JP2019083279A
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: JP2019083279A Publication Date: 2019-05-30 Application Number: 2017210834 Filing Date: 2017-10-31 Inventor: Okabe, Takeshi   Kato, Aiko   Suzuki, Yukinobu   Tange tsutomu   Assignee: CANON INC   IPC: H01L23/532 Abstract: To provide a semiconductor device that achieves both suppression of abnormal growth of silicide in a contact plug and reduction in contact resistance.SOLUTION: In a manufacturing method of a semiconductor device according to an embodiment, a film containing titanium is formed in a contact hole formed in an insulating film on a semiconductor substrate so as to be in contact with the semiconductor substrate by a CVD method at a first temperature of 610°C or less, and after the film containing titanium is formed, the semiconductor substrate on which the film containing titanium is formed is heat treated at a second temperature higher than the first temperature.SELECTED DRAWING: Figure 2
13
US201996946A1
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
Publication/Patent Number: US201996946A1 Publication Date: 2019-03-28 Application Number: 20/181,613 Filing Date: 2018-09-21 Inventor: Ohtani, Akira   Sasaki, Keiichi   Hirota, Katsunori   Tange tsutomu   Tanaka, Yoshiei   Assignee: Canon Kabushiki Kaisha   IPC: H01L31/103 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
14
US10411058B2
Semiconductor apparatus, system, and method of producing semiconductor apparatus
Publication/Patent Number: US10411058B2 Publication Date: 2019-09-10 Application Number: 15/849,229 Filing Date: 2017-12-20 Inventor: Tange tsutomu   Suzuki, Yukinobu   Kato, Aiko   Hara, Koji   Okabe, Takehito   Assignee: Canon Kabushiki Kaisha   IPC: H01L27/146 Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
15
JP2019067826A
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND APPARATUS
Publication/Patent Number: JP2019067826A Publication Date: 2019-04-25 Application Number: 2017188985 Filing Date: 2017-09-28 Inventor: Hirota, Katsunori   Otani, Akira   Sasaki, Keiichi   Tange tsutomu   Tanaka, Yoshie   Assignee: CANON INC   IPC: H01L31/02 Abstract: To provide an advantageous technique to improve characteristics of an imaging apparatus.SOLUTION: The imaging apparatus includes: a substrate having a photoelectric conversion unit; and a silicon nitride layer arranged to cover at least a part of the photoelectric conversion unit. The silicon nitride layer contains chlorine, and a N/Si composition ratio of the silicon nitride layer is 1.00 or more and less than 1.33.SELECTED DRAWING: Figure 3
16
US2019096946A1
IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DEVICE
Publication/Patent Number: US2019096946A1 Publication Date: 2019-03-28 Application Number: 16/137,861 Filing Date: 2018-09-21 Inventor: Hirota, Katsunori   Sasaki, Keiichi   Tange tsutomu   Tanaka, Yoshiei   Ohtani, Akira   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
17
US10096545B2
Semiconductor apparatus, system, and method of manufacturing semiconductor apparatus
Publication/Patent Number: US10096545B2 Publication Date: 2018-10-09 Application Number: 15/279,135 Filing Date: 2016-09-28 Inventor: Kawano, Akihiro   Tange tsutomu   Ishioka, Masao   Tazoe, Koichi   Assignee: Canon Kabushiki Kaisha   IPC: H01L27/146 Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.
18
US2018182802A1
SEMICONDUCTOR APPARATUS, SYSTEM, AND METHOD OF PRODUCING SEMICONDUCTOR APPARATUS
Publication/Patent Number: US2018182802A1 Publication Date: 2018-06-28 Application Number: 15/849,229 Filing Date: 2017-12-20 Inventor: Okabe, Takehito   Hara, Koji   Kato, Aiko   Suzuki, Yukinobu   Tange tsutomu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L21/768 Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
19
US2017092582A1
SEMICONDUCTOR APPARATUS, SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
Publication/Patent Number: US2017092582A1 Publication Date: 2017-03-30 Application Number: 15/279,135 Filing Date: 2016-09-28 Inventor: Kawano, Akihiro   Tange tsutomu   Ishioka, Masao   Tazoe, Koichi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L23/522 Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.
20
JP2017069430A
IMAGING DEVICE
Publication/Patent Number: JP2017069430A Publication Date: 2017-04-06 Application Number: 2015194479 Filing Date: 2015-09-30 Inventor: Tange tsutomu   Kono, Akihiro   Ishioka, Masao   Tazoe, Koichi   Assignee: CANON INC   IPC: H01L21/768 Abstract: PROBLEM TO BE SOLVED: To provide an imaging device capable of improving performance of a pixel circuit and a logic circuit.SOLUTION: An imaging device provided with a pixel circuit that generates a pixel signal based on electric charges generated by photoelectric conversion