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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
EP2713409B1
PHOTODIODE WITH A FIELD ELECTRODE FOR REDUCING THE SPACE CHARGE REGION
Publication/Patent Number: EP2713409B1 Publication Date: 2020-08-26 Application Number: 12186405.2 Filing Date: 2012-09-27 Inventor: Teva, Jordi   Assignee: ams AG   IPC: H01L31/103
2
EP2747154B1
LATERAL SINGLE-PHOTON AVALANCHE DIODE AND METHOD OF PRODUCING A LATERAL SINGLE-PHOTON AVALANCHE DIODE
Publication/Patent Number: EP2747154B1 Publication Date: 2020-04-01 Application Number: 12199105.3 Filing Date: 2012-12-21 Inventor: Teva, Jordi   Roger, Frederic   Assignee: ams AG   IPC: H01L31/107
3
EP2592661B8
Lateral avalanche photodiode device and method of production
Publication/Patent Number: EP2592661B8 Publication Date: 2019-05-22 Application Number: 11188873.1 Filing Date: 2011-11-11 Inventor: Jonak-auer, Ingrid   Teva, Jordi   Assignee: ams AG   IPC: H01L31/107
4
US10522696B2
Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
Publication/Patent Number: US10522696B2 Publication Date: 2019-12-31 Application Number: 16/157,424 Filing Date: 2018-10-11 Inventor: Teva, Jordi   Roger, Frederic   Assignee: ams AG   IPC: H01L31/0224 Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.
5
US2019051772A1
LATERAL SINGLE-PHOTON AVALANCHE DIODE AND METHOD OF PRODUCING A LATERAL SINGLE-PHOTON AVALANCHE DIODE
Publication/Patent Number: US2019051772A1 Publication Date: 2019-02-14 Application Number: 16/157,424 Filing Date: 2018-10-11 Inventor: Teva, Jordi   Roger, Frederic   Assignee: ams AG   IPC: H01L31/0224 Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.
6
EP2592661B1
Lateral avalanche photodiode device and method of production
Publication/Patent Number: EP2592661B1 Publication Date: 2019-03-20 Application Number: 11188873.1 Filing Date: 2011-11-11 Inventor: Jonak-auer, Ingrid   Teva, Jordi   Assignee: austriamicrosystems AG   IPC: H01L31/107 Abstract: A lateral avalanche device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.
7
EP2860560B1
Semiconductor device with optical and electrical vias
Publication/Patent Number: EP2860560B1 Publication Date: 2019-07-24 Application Number: 13188483.5 Filing Date: 2013-10-14 Inventor: Kraft, Jochen   Rohracher, Karl   Teva, Jordi   Assignee: ams AG   IPC: G02B6/42
8
EP2620978B1
Semiconductor device with internal substrate contact and method of production
Publication/Patent Number: EP2620978B1 Publication Date: 2019-07-24 Application Number: 12152485.4 Filing Date: 2012-01-25 Inventor: Kraft, Jochen   Teva, Jordi   Cassidy, Cathal   Koppitsch, Günther   Assignee: austriamicrosystems AG   IPC: H01L21/74
9
US10374114B2
Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
Publication/Patent Number: US10374114B2 Publication Date: 2019-08-06 Application Number: 14/777,484 Filing Date: 2014-03-11 Inventor: Teva, Jordi   Roger, Frederic   Stueckler, Ewald   Jessenig, Stefan   Minixhofer, Rainer   Wachmann, Ewald   Schrems, Martin   Koppitsch, Guenther   Assignee: ams AG   IPC: H01L31/107 Abstract: The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.
10
US10128385B2
Lateral single-photon avalanche diode and method of producing a lateral single photon avalanche diode
Publication/Patent Number: US10128385B2 Publication Date: 2018-11-13 Application Number: 14/654,470 Filing Date: 2013-12-19 Inventor: Teva, Jordi   Roger, Frederic   Assignee: ams AG   IPC: H01L31/107 Abstract: A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.
11
US9995894B2
Semiconductor device with optical and electrical vias
Publication/Patent Number: US9995894B2 Publication Date: 2018-06-12 Application Number: 15/028,934 Filing Date: 2014-10-08 Inventor: Teva, Jordi   Rohracher, Karl   Kraft, Jochen   Assignee: ams AG   IPC: H05K3/46 Abstract: The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.
12
US9870988B2
Method of producing a semiconductor device with through-substrate via covered by a solder ball
Publication/Patent Number: US9870988B2 Publication Date: 2018-01-16 Application Number: 15/691,654 Filing Date: 2017-08-30 Inventor: Schrems, Martin   Schrank, Franz   Teva, Jordi   Assignee: ams AG   IPC: H01L23/552 Abstract: A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.
13
DE102011009373B4
Fotodiodenbauelement
Title (English): Photoelectric component
Publication/Patent Number: DE102011009373B4 Publication Date: 2017-08-03 Application Number: 102011009373 Filing Date: 2011-01-25 Inventor: Schrank, Franz   Teva, Jordi Dr   Assignee: Austriamicrosystems AG   IPC: H01L27/146 Abstract: Fotodiodenbauelement mit – einer elektrisch leitfähigen Kathodenschicht (3) an einer Fotodiodenschicht (4) aus einem Halbleitermaterial
14
US9252298B2
Photodiode device with reducible space charge region
Publication/Patent Number: US9252298B2 Publication Date: 2016-02-02 Application Number: 14/430,534 Filing Date: 2013-09-10 Inventor: Teva, Jordi   Assignee: ams AG   IPC: H01L21/20 Abstract: The photodiode device comprises a doped region (2) contiguous with a contact region (3) of the same conductivity type located at the substrate surface (1′), an appertaining anode or cathode connection (7, 11), a further contact region (5) of an opposite conductivity type at the substrate surface, and a further anode or cathode connection (8, 12). The contact region (3) is arranged at least on opposite sides of an active area of the substrate surface that covers the further contact region (5). A lateral pn junction (16) and an associated space charge region is formed at the substrate surface by a boundary of one of the contact regions, the boundary facing the other contact region. A field electrode (6) is arranged above the lateral pn junction, separated from the lateral pn junction by a dielectric material (10), and is provided with a further electrical connection (9, 13) separate from the anode and cathode connections. By the field electrode (6), the space charge region at the surface (1′) is reduced and the peripheral dark current of the photodiode decreases considerably.
15
US9293626B2
Lateral avalanche photodiode device and method of production
Publication/Patent Number: US9293626B2 Publication Date: 2016-03-22 Application Number: 14/357,199 Filing Date: 2012-10-22 Inventor: Jonak-auer, Ingrid   Teva, Jordi   Assignee: AMS AG   IPC: H01L31/107 Abstract: A lateral avalanche photodiode device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.
16
US2016259139A1
SEMICONDUCTOR DEVICE WITH OPTICAL AND ELECTRICAL VIAS
Publication/Patent Number: US2016259139A1 Publication Date: 2016-09-08 Application Number: 15/028,934 Filing Date: 2014-10-08 Inventor: Kraft, Jochen   Rohracher, Karl   Teva, Jordi   Assignee: ams AG   IPC: G02B6/42 Abstract: The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.
17
US9466529B2
Masking method for semiconductor devices with high surface topography
Publication/Patent Number: US9466529B2 Publication Date: 2016-10-11 Application Number: 14/766,412 Filing Date: 2014-01-29 Inventor: Koppitsch, Guenther   Stueckler, Ewald   Rohracher, Karl   Teva, Jordi   Assignee: AMS AG   IPC: H01L21/76 Abstract: The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.
18
US9245843B2
Semiconductor device with internal substrate contact and method of production
Publication/Patent Number: US9245843B2 Publication Date: 2016-01-26 Application Number: 14/373,627 Filing Date: 2013-01-16 Inventor: Kraft, Jochen   Teva, Jordi   Cassidy, Cathal   Koppitsch, Günther   Assignee: ams AG   IPC: H01L23/528 Abstract: The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metallization (12) arranged in the contact hole, so that the contact metallization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.
19
EP2765456B1
Masking method for semiconductor devices with high surface topography
Publication/Patent Number: EP2765456B1 Publication Date: 2016-05-04 Application Number: 13154625.1 Filing Date: 2013-02-08 Inventor: Koppitsch, Günther   Stückler, Ewald   Rohracher, Karl   Teva, Jordi   Assignee: ams AG   IPC: G03F7/09 Abstract: The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.
20
EP2973746A2
LATERAL SINGLE-PHOTON AVALANCHE DIODE AND THEIR MANUFACTURING METHOD
Publication/Patent Number: EP2973746A2 Publication Date: 2016-01-20 Application Number: 14709629.1 Filing Date: 2014-03-11 Inventor: Teva, Jordi   Roger, Frederic   StÜckler, Ewald   Jessenig, Stefan   Minixhofer, Rainer   Wachmann, Ewald   Schrems, Martin   Koppitsch, Günther   Assignee: AMS AG   IPC: H01L31/107
Total 4 pages