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1
US2020286777A1
INTERCONNECT STRUCTURE AND METHOD FOR PREPARING THE SAME
Publication/Patent Number: US2020286777A1 Publication Date: 2020-09-10 Application Number: 16/389,644 Filing Date: 2019-04-19 Inventor: Wang, Mao-ying   Shih, Shing-yih   Wu, Hung-mo   Ting yung te   Lin, Yu-ting   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L21/768 Abstract: The present disclosure provides a method for preparing an interconnect structure. One aspect of the present disclosure provides a method for preparing an interconnect structure. The method includes the following steps. A first dielectric layer is provided over a first connecting line. A first upper via opening is formed in the first dielectric layer, wherein the first upper via opening has a first width. A first lower via opening is formed in the first dielectric layer, wherein the first lower via opening is formed under and coupled to the first upper via opening. The first lower via opening has a second width less than the first width of the first upper via opening. A connecting via is formed in the first upper via opening and the first lower via opening. A second connecting line is formed over the connecting via.
2
US2020176377A1
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
Publication/Patent Number: US2020176377A1 Publication Date: 2020-06-04 Application Number: 16/251,858 Filing Date: 2019-01-18 Inventor: Lin, Yu-ting   Wang, Mao-ying   Shih, Shing-yih   Wu, Hung-mo   Ting yung te   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L23/522 Abstract: The present disclosure provides an electronic device and a method of manufacturing the same. The electronic device includes a multilayer component, at least one contact pad, a passivation layer, a dielectric layer, and a metallic layer. The contact pad is disposed on the multilayer component, the passivation layer covers the multilayer component and the contact pad, and the dielectric layer is disposed on the passivation layer. The metallic layer penetrates through the dielectric layer and the passivation layer and is connected to the contact pad, and the metallic layer discretely tapers at positions of decreasing distance from the contact pad.
3
US2020286775A1
INTERCONNECT STRUCTURE AND METHOD FOR PREPARING THE SAME
Publication/Patent Number: US2020286775A1 Publication Date: 2020-09-10 Application Number: 16/291,376 Filing Date: 2019-03-04 Inventor: Wang, Mao-ying   Shih, Shing-yih   Wu, Hung-mo   Ting yung te   Lin, Yu-ting   Assignee: NANYA TECHNOLOGY CORPORATION   IPC: H01L21/768 Abstract: The present disclosure provides an interconnect structure. The interconnect structure includes a first connecting line, a second connecting line disposed over the first connecting line, and a connecting via disposed in a dielectric structure between the first connecting line and the second connecting line, and electrically connecting the first connecting line and the second connecting line. The connecting via includes a head portion and a body portion, and a width of the head portion is greater than a width of the body portion.