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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US10818779B2
Method and structure for mandrel and spacer patterning
Publication/Patent Number: US10818779B2 Publication Date: 2020-10-27 Application Number: 16/517,246 Filing Date: 2019-07-19 Inventor: Tseng chi che   Wang, Chen-yuan   Hsieh, Wilson   Lin, Yi-hung   Huang, Chung-li   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L29/66 Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
2
US10361286B2
Method and structure for mandrel and spacer patterning
Publication/Patent Number: US10361286B2 Publication Date: 2019-07-23 Application Number: 15/191,916 Filing Date: 2016-06-24 Inventor: Tseng chi che   Wang, Chen-yuan   Hsieh, Wilson   Lin, Yi-hung   Huang, Chung-li   Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.   IPC: H01L29/66 Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
3
US2019341474A1
Method and Structure for Mandrel and Spacer Patterning
Publication/Patent Number: US2019341474A1 Publication Date: 2019-11-07 Application Number: 16/517,246 Filing Date: 2019-07-19 Inventor: Tseng chi che   Wang, Chen-yuan   Hsieh, Wilson   Lin, Yi-hung   Huang, Chung-li   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L29/66 Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
4
US2017372974A1
Method and Structure for Mandrel and Spacer Patterning
Publication/Patent Number: US2017372974A1 Publication Date: 2017-12-28 Application Number: 20/161,519 Filing Date: 2016-06-24 Inventor: Lin, Yi-hung   Huang, Chung-li   Lin, Yi-hung   Tseng chi che   Wang, Chen-yuan   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L21/66 Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.
5
TWI459576B
Ingaas-capped lwir quntum-dot infrared photodetectors
Publication/Patent Number: TWI459576B Publication Date: 2014-11-01 Application Number: 98132406 Filing Date: 2009-09-25 Inventor: Lin, Shih Yen   Tseng, Chi Che   Lin, Wei Hsun   Chao, Kuang Ping   Assignee: Academia Sinica   IPC: H01L31/0304 Abstract: The invention discloses InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors (QDIPs). Enhanced detection wavelengths in the long-wavelength infrared range of the device are observed with decreasing InAs coverage. Compared with the standard QDIP without the InGaAs-capped layer
6
TWI400813B
Apparatus and method for forming quantum-dot and quantum-well mixed-mode infrared photodetector
Publication/Patent Number: TWI400813B Publication Date: 2013-07-01 Application Number: 97132489 Filing Date: 2008-08-26 Inventor: Lin, Shih Yen   Chou, Shu Ting   Tseng, Chi Che   Lin, Wei Hsun   Assignee: Academia Sinica   IPC: H01L31/101 Abstract: The present invention is disclosed that Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector (MMIP) are demonstrated for multi-color detection in both the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks
7
TW201112435A
Ingaas-capped lwir quntum-dot infrared photodetectors
Publication/Patent Number: TW201112435A Publication Date: 2011-04-01 Application Number: 98132406 Filing Date: 2009-09-25 Inventor: Lin, Shih Yen   Tseng, Chi Che   Lin, Wei Hsun   Chao, Kuang Ping   Assignee: Academia Sinica   IPC: H01L31/0304 Abstract: The invention discloses InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors (QDIPs). Enhanced detection wavelengths in the long-wavelength infrared range of the device are observed with decreasing InAs coverage. Compared with the standard QDIP without the InGaAs-capped layer
8
TW201010105A
Apparatus and method for forming quantum-dot and quantum-well mixed-mode infrared photodetector
Publication/Patent Number: TW201010105A Publication Date: 2010-03-01 Application Number: 97132489 Filing Date: 2008-08-26 Inventor: Lin, Shih Yen   Chou, Shu Ting   Tseng, Chi Che   Lin, Wei Hsun   Assignee: Academia Sinica   IPC: H01L31/101 Abstract: The present invention is disclosed that Quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector (MMIP) are demonstrated for multi-color detection in both the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) ranges. The polarization-dependent response of the device has shown that the higher normal-incident absorption is observed for the MWIR peaks