Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
EP3282689B1
SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: EP3282689B1 Publication Date: 2021-03-03 Application Number: 16776408.3 Filing Date: 2016-03-24 Inventor: Sano, Takuya   Wakano, Toshifumi   Assignee: Sony Corporation   IPC: H04N5/3745
2
US2021006726A1
IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2021006726A1 Publication Date: 2021-01-07 Application Number: 17/025,975 Filing Date: 2020-09-18 Inventor: Yoshimura, Kyohei   Wakano, Toshifumi   Otake, Yusuke   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/232 Abstract: The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.
3
EP3789730A1
LIGHT-RECEIVING ELEMENT AND DISTANCE MEASUREMENT MODULE
Publication/Patent Number: EP3789730A1 Publication Date: 2021-03-10 Application Number: 19832264.6 Filing Date: 2019-07-04 Inventor: Isogai, Yuji   Imoto, Tsutomu   Maruyama, Takuya   Murase, Takuro   Watanabe, Ryota   Wakano, Toshifumi   Assignee: Sony Semiconductor Solutions Corporation   IPC: G01C3/06 Abstract: The present technology relates to a light reception device and a distance measurement module that make it possible to improve a characteristic. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion to which a first voltage is applied and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion to which a second voltage different from the first voltage is applied and a second charge detection portion arranged around the second voltage application portion The on-chip lens is configured such that the position thereof differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.
4
EP3410488B1
SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
Publication/Patent Number: EP3410488B1 Publication Date: 2020-03-11 Application Number: 18177447.2 Filing Date: 2012-09-27 Inventor: Wakano, Toshifumi   Assignee: Sony Corporation   IPC: H01L27/146
5
US10659705B2
Solid-state imaging device and electronic device with transistor groups
Publication/Patent Number: US10659705B2 Publication Date: 2020-05-19 Application Number: 16/034,104 Filing Date: 2018-07-12 Inventor: Sano, Takuya   Wakano, Toshifumi   Assignee: Sony Corproation   IPC: H04N5/359 Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.
6
US2020295218A1
AVALANCHE PHOTODIODE SENSOR, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020295218A1 Publication Date: 2020-09-17 Application Number: 16/636,866 Filing Date: 2018-09-21 Inventor: Wakano, Toshifumi   Otake, Yusuke   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L31/107 Abstract: An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.
7
US10546898B2
Imaging apparatus and electronic device
Publication/Patent Number: US10546898B2 Publication Date: 2020-01-28 Application Number: 16/062,556 Filing Date: 2016-12-09 Inventor: Otake, Yusuke   Wakano, Toshifumi   Assignee: Sony Corporation   IPC: H01L27/00 Abstract: This technology relates to an imaging apparatus and an electronic device structured to perform pupil correction appropriately. There are provided a photoelectric conversion film configured to absorb light of a predetermined color component to generate signal charges, a first lower electrode configured to be formed under the photoelectric conversion film, a second lower electrode configured to be connected with the first lower electrode, a via configured to connect the first lower electrode with the second lower electrode, and a photodiode configured to be formed under the second lower electrode and to generate signal charges reflecting the amount of incident light. A first distance between the center of the photodiode and the center of the via at the center of the angle of view is different from a second distance therebetween at an edge of the angle of view. The present technology can be applied to imaging apparatuses.
8
EP3721483A1
AVALANCHE PHOTODIODE SENSOR, AND ELECTRONIC DEVICE
Publication/Patent Number: EP3721483A1 Publication Date: 2020-10-14 Application Number: 18782528.6 Filing Date: 2018-09-21 Inventor: Wakano, Toshifumi   Otake, Yusuke   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L31/107
9
US2020083265A1
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020083265A1 Publication Date: 2020-03-12 Application Number: 16/574,517 Filing Date: 2019-09-18 Inventor: Otake, Yusuke   Wakano, Toshifumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
10
US10714519B2
Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus
Publication/Patent Number: US10714519B2 Publication Date: 2020-07-14 Application Number: 16/520,091 Filing Date: 2019-07-23 Inventor: Kato, Nanako   Wakano, Toshifumi   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
11
US2020120300A1
SOLID-STATE IMAGING APPARATUS, IMAGING SYSTEM, AND DISTANCE MEASUREMENT METHOD
Publication/Patent Number: US2020120300A1 Publication Date: 2020-04-16 Application Number: 16/715,653 Filing Date: 2019-12-16 Inventor: Sano, Takuya   Wakano, Toshifumi   Assignee: SONY CORPORATION   IPC: H04N5/374 Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.
12
US10672818B2
Sensor chip and electronic device
Publication/Patent Number: US10672818B2 Publication Date: 2020-06-02 Application Number: 16/329,464 Filing Date: 2017-11-15 Inventor: Tanaka, Akira   Otake, Yusuke   Wakano, Toshifumi   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.
13
US10741605B2
Solid-state image sensor, imaging device, and electronic equipment
Publication/Patent Number: US10741605B2 Publication Date: 2020-08-11 Application Number: 16/168,522 Filing Date: 2018-10-23 Inventor: Kato, Nanako   Wakano, Toshifumi   Tanaka, Yusuke   Otake, Yusuke   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
14
US10535687B2
Solid-state imaging device and electronic apparatus
Publication/Patent Number: US10535687B2 Publication Date: 2020-01-14 Application Number: 16/152,040 Filing Date: 2018-10-04 Inventor: Azami, Kenji   Otake, Yusuke   Wakano, Toshifumi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).
15
US2020249083A1
AVALANCHE PHOTODIODE SENSOR
Publication/Patent Number: US2020249083A1 Publication Date: 2020-08-06 Application Number: 16/462,471 Filing Date: 2018-09-03 Inventor: Ito, Kyosuke   Wakano, Toshifumi   Otake, Yusuke   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: G01J1/44 Abstract: An avalanche photodiode sensor includes a photoelectric conversion region disposed in a substrate and that converts incident light into electric charge. The avalanche photodiode sensor includes a first region of a first conductivity type on the photoelectric conversion region, and a cathode disposed in the PHOTODIODE substrate adjacent to the first region and coupled to the photoelectric conversion region. The avalanche photodiode sensor includes an anode disposed in the substrate adjacent to the cathode, and a contact of the first conductivity type disposed in the substrate. An impurity concentration of the first region is different than an impurity concentration of the contact.
16
US2020403021A1
SOLID-STATE IMAGE-CAPTURING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US2020403021A1 Publication Date: 2020-12-24 Application Number: 17/015,291 Filing Date: 2020-09-09 Inventor: Tanaka, Yusuke   Nagano, Takashi   Wakano, Toshifumi   Matsunuma, Takeshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
17
EP2563011B1
Solid-state imaging device and electronic apparatus
Publication/Patent Number: EP2563011B1 Publication Date: 2020-11-25 Application Number: 12179627.0 Filing Date: 2012-08-08 Inventor: Kato, Nanako   Wakano, Toshifumi   Yamamoto, Atsuhiko   Assignee: Sony Corporation   IPC: H04N5/3745