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1
US2021009899A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2021009899A1 Publication Date: 2021-01-14 Application Number: 16/918,316 Filing Date: 2020-07-01 Inventor: Won, Nayoun   Park, Garam   Jun, Shin Ae   Kim, Tae Gon   Kim, Taekhoon   Park, Shang Hyeun   Lim, Mi Hye   Assignee: Samsung Display Co., Ltd.   IPC: C09K11/88 Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
2
US2020208011A1
BARRIER FILMS AND QUANTUM DOT POLYMER COMPOSITE ARTICLES INCLUDING THE SAME
Publication/Patent Number: US2020208011A1 Publication Date: 2020-07-02 Application Number: 16/812,447 Filing Date: 2020-03-09 Inventor: Kikuchi, Tomoyuki   Jang, Eunjoo   Kang, Hyun A   Won, Nayoun   Cho, Oul   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09D181/00 Abstract: A barrier film comprising: a substrate; a first layer disposed on the substrate and comprising an oxidation product of polysilazane; and a second layer disposed directly on the first layer and comprising a thiol-ene polymer, wherein the polysilazane comprises a repeating unit represented by Chemical Formula 1, wherein R1 and R2 are each independently hydrogen, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an alkylsilyl group, an alkylamino group, an alkoxy group, or an aromatic hydrocarbon group, and wherein the thiol-ene polymer is a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end.
3
US10689511B2
Compositions, composites prepared therefrom, and electronic devices including the same
Publication/Patent Number: US10689511B2 Publication Date: 2020-06-23 Application Number: 15/862,197 Filing Date: 2018-01-04 Inventor: Ahn, Jooyeon   Won, Nayoun   Kwon, Ha Il   Jang, Eun Joo   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: C08L57/10 Abstract: A composition including: a plurality of quantum dots; a monomer combination including a first monomer having at least two thiol groups at terminal ends of the first monomer and a second monomer having at least two carbon-carbon double bonds at terminal ends of the second monomer; and an additive, a composite prepared therefrom, and an electronic device including same are disclosed. The additive includes a cyclosiloxane compound having a reactive moiety, a (meth)acrylate salt of a polyvalent metal, and a dithiocarbamate salt of a polyvalent metal, or a combination thereof, and wherein the reactive moiety includes a carbon-carbon double bond, a thiol group, or a combination thereof.
4
US2020399536A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020399536A1 Publication Date: 2020-12-24 Application Number: 16/904,664 Filing Date: 2020-06-18 Inventor: Kim, Tae Gon   Jun, Shin Ae   Kim, Taek Hoon   Yang, Hyeyeon   Won, Nayoun   Lee, Jongmin   Lim, Mi Hye   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/70 Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0,7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.
5
EP3660124A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3660124A1 Publication Date: 2020-06-03 Application Number: 19185460.3 Filing Date: 2019-07-10 Inventor: Park, Garam   Kim, Tae Gon   Ahn, Jooyeon   Kim, Ji-yeong   Won, Nayoun   Jun, Shin Ae   Assignee: Samsung Display Co., Ltd.   IPC: C09K11/02 Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
6
US2020172806A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020172806A1 Publication Date: 2020-06-04 Application Number: 16/507,406 Filing Date: 2019-07-10 Inventor: Park, Garam   Kim, Tae Gon   Ahn, Jooyeon   Kim, Ji-yeong   Won, Nayoun   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
7
US10559726B2
Layered structures and quantum dot sheets and electronic devices including the same
Publication/Patent Number: US10559726B2 Publication Date: 2020-02-11 Application Number: 15/581,861 Filing Date: 2017-04-28 Inventor: Kang, Hyun A   Won, Nayoun   Jang, Eun Joo   Kwon, Ha Il   Lee, Jeong Hee   Cho, Oul   Kikuchi, Tomoyuki   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A layered structure having a first layer including a polymerization product of a monomer combination including a first monomer having at least two thiol groups at its terminal end and a second monomer having at least two carbon-carbon unsaturated bond-containing groups at its terminal end, wherein the first monomer includes a first thiol compound represented by Chemical Formula 1-1 including a thioglycolate moiety and a second thiol represented by Chemical Formula 1-2, and wherein the second monomer includes an ene compound represented by Chemical Formula 2: wherein in Chemical Formulae 1-1, 1-2, and 2, groups and variables are the same as described in the specification.
8
US10676666B2
Quantum dot aggregate particles, production methods thereof, and compositions and electronic devices including the same
Publication/Patent Number: US10676666B2 Publication Date: 2020-06-09 Application Number: 15/675,251 Filing Date: 2017-08-11 Inventor: Kwon, Ha Il   Kim, Tae Gon   Ahn, Jooyeon   Won, Nayoun   Jun, Shin Ae   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: C09K11/08 Abstract: A quantum dot aggregate particle including a plurality of quantum dots, a polyvalent metal compound, and a thiol compound having at least two thiol groups at its end terminals, wherein a size of the quantum dot aggregate particle is in a range from about 20 nanometers to 10 micrometers.
9
EP3327814B1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3327814B1 Publication Date: 2020-10-28 Application Number: 17203152.8 Filing Date: 2017-11-22 Inventor: Ahn, Jooyeon   Kwon, Ha Ll   Park, Shang Hyeun   Won, Nayoun   Jang, Eun Joo   Jun, Shin Ae   Assignee: Samsung Electronics Co., Ltd.   Samsung Display Co., Ltd.   Samsung SDI Co., Ltd.   IPC: H01L51/54
10
EP3753996A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3753996A1 Publication Date: 2020-12-23 Application Number: 20180699.9 Filing Date: 2020-06-18 Inventor: Kim, Tae Gon   Jun, Shin Ae   Kim, Taekhoon   Yang, Hyeyeon   Won, Nayoun   Lee, Jongmin   Lim, Mi Hye   Assignee: Samsung Display Co., Ltd.   IPC: C09K11/88 Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0,7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: Absfirst−Absvalley/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.
11
US2020172802A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020172802A1 Publication Date: 2020-06-04 Application Number: 16/785,821 Filing Date: 2020-02-10 Inventor: Ahn, Jooyeon   Kwon, Ha Ii   Park, Shang Hyeun   Won, Nayoun   Jang, Eun Joo   Jun, Shin Ae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2: MAn  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and wherein, R1, L1, Y1, R, k1, and k2 are the same as defined in the specification.
12
US10703967B2
Quantum dots, a composition or composite including the same, and an electronic device including the same
Publication/Patent Number: US10703967B2 Publication Date: 2020-07-07 Application Number: 15/820,781 Filing Date: 2017-11-22 Inventor: Ahn, Jooyeon   Kwon, Ha Il   Park, Shang Hyeun   Won, Nayoun   Jang, Eun Joo   Jun, Shin Ae   Assignee: SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2: MAn  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and wherein, R1, L1, Y1, R, k1, and k2 are the same as defined in the specification.
13
EP3511395B1
QUANTUM DOT AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3511395B1 Publication Date: 2020-05-13 Application Number: 19151364.7 Filing Date: 2019-01-11 Inventor: Park, Young Seok   Jang, Eun Joo   Jun, Shin Ae   Won, Nayoun   Ahn, Jooyeon   Kim, Sung Woo   Assignee: Samsung Electronics Co., Ltd.   Samsung Display Co., Ltd.   Samsung SDI Co., Ltd.   IPC: C09K11/02
14
US10619096B2
Population of quantum dots and a composition including the same
Publication/Patent Number: US10619096B2 Publication Date: 2020-04-14 Application Number: 16/245,594 Filing Date: 2019-01-11 Inventor: Park, Garam   Kim, Tae Gon   Won, Nayoun   Jun, Shin Ae   Kwon, Soo Kyung   Kim, Seon-yeong   Park, Shang Hyeun   Ahn, Jooyeon   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: H01L21/00 Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
15
US2020217974A1
POPULATION OF QUANTUM DOTS AND A COMPOSITION INCLUDING THE SAME
Publication/Patent Number: US2020217974A1 Publication Date: 2020-07-09 Application Number: 16/825,293 Filing Date: 2020-03-20 Inventor: Park, Garam   Kim, Tae Gon   Won, Nayoun   Jun, Shin Ae   Kwon, Soo Kyung   Kim, Seon-yeong   Park, Shang Hyeun   Ahn, Jooyeon   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: G01T7/00 Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
16
EP3327342B1
LIQUID CRYSTAL DISPLAY
Publication/Patent Number: EP3327342B1 Publication Date: 2019-04-10 Application Number: 17208122.6 Filing Date: 2015-12-08 Inventor: Kim, Tae Hyung   Jang, Eun Joo   Jun, Shin Ae   Kang, Hyun A   Kim, Yongwook   Won, Nayoun   Jang, Hyo Sook   Assignee: Samsung Electronics Co., Ltd.   IPC: F21V8/00 Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin, a scatterer, and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61 <Cy<0.70 in the color coordinates, wherein Cx and Cy are measured along the x-axis and y-axis, respectively, in the CIE 1931 xy chromaticity diagram.
17
US10472562B2
Quantum dot-polymer micronized composite, production method thereof, and article and electronic device including the same
Publication/Patent Number: US10472562B2 Publication Date: 2019-11-12 Application Number: 15/378,791 Filing Date: 2016-12-14 Inventor: Lee, Jeong Hee   Kang, Hyun A   Kim, Tae Hyung   Jang, Eun Joo   Won, Nayoun   You, Jiho   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A quantum dot-polymer micronized composite includes a first polymer matrix; a plurality of quantum dots dispersed in the first polymer matrix; and at least one of an additive selected from a clay particle embedded in the first polymer matrix and a metal halide dispersed in the first polymer matrix, wherein the quantum dot-polymer micronized composite has an average particle size of less than or equal to about 100 micrometers, a production method thereof, and an article and an electronic device including the micronized composite are provided.
18
EP3511395A1
QUANTUM DOT, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3511395A1 Publication Date: 2019-07-17 Application Number: 19151364.7 Filing Date: 2019-01-11 Inventor: Park, Young Seok   Jang, Eun Joo   Jun, Shin Ae   Won, Nayoun   Ahn, Jooyeon   Kim, Sung Woo   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/02 Abstract: A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.
19
EP3239197B1
LAYERED STRUCTURES AND QUANTUM DOT SHEETS AND ELECTRONIC DEVICES INCLUDING THE SAME
Publication/Patent Number: EP3239197B1 Publication Date: 2019-01-23 Application Number: 17168408.7 Filing Date: 2017-04-27 Inventor: Kang, Hyun A   Won, Nayoun   Jang, Eun Joo   Kwon, Ha Il   Lee, Jeong Hee   Cho, Oul   Kikuchi, Tomoyuki   Assignee: Samsung Electronics Co., Ltd.   IPC: C08F222/26
20
US2019211262A1
QUANTUM DOT, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2019211262A1 Publication Date: 2019-07-11 Application Number: 16/245,653 Filing Date: 2019-01-11 Inventor: Park, Young Seok   Jang, Eun Joo   Jun, Shin Ae   Won, Nayoun   Ahn, Jooyeon   Kim, Sung Woo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/70 Abstract: A quantum dot includes a core including a first semiconductor nanocrystal and a multi-layered shell disposed on the core and including at least two layers, a production method thereof, and an electronic device including the same. The quantum dot does not include cadmium; the first semiconductor nanocrystal includes a Group III-V compound, the multi-layered shell includes a first layer surrounding at least a portion of a surface of the core, the first layer including a second semiconductor nanocrystal, the second semiconductor nanocrystal including a Group II-V compound, and a second layer disposed on the first layer, the second layer including a third semiconductor nanocrystal, the third semiconductor nanocrystal comprising a composition different from that of the second semiconductor nanocrystal.
Total 3 pages