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1
US2021040388A1
ELECTRONIC DEVICE INCLUDING QUANTUM DOTS
Publication/Patent Number: US2021040388A1 Publication Date: 2021-02-11 Application Number: 17/083,470 Filing Date: 2020-10-29 Inventor: Won, Yuho   Kwon, Ha Il   Jang, Eun Joo   Chang, Jaejun   Chung, Dae Young   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
2
US10590340B2
Quantum dots, a composition or composite including the same, and an electronic device including the same
Publication/Patent Number: US10590340B2 Publication Date: 2020-03-17 Application Number: 16/245,728 Filing Date: 2019-01-11 Inventor: Jang, Eun Joo   Kim, Ji Yeong   Hwang, Sungwoo   Won, Yuho   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: B82Y40/00 Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
3
US2020071612A1
ELECTRONIC DEVICE INCLUDING QUANTUM DOTS
Publication/Patent Number: US2020071612A1 Publication Date: 2020-03-05 Application Number: 16/554,839 Filing Date: 2019-08-29 Inventor: Won, Yuho   Kwon, Ha Il   Jang, Eun Joo   Chang, Jaejun   Chung, Dae Young   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
4
US10851298B2
Electronic device including quantum dots
Publication/Patent Number: US10851298B2 Publication Date: 2020-12-01 Application Number: 16/554,839 Filing Date: 2019-08-29 Inventor: Won, Yuho   Kwon, Ha Il   Jang, Eun Joo   Chang, Jaejun   Chung, Dae Young   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
5
US2020224094A1
CORE SHELL QUANTUM DOT AND ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020224094A1 Publication Date: 2020-07-16 Application Number: 16/739,595 Filing Date: 2020-01-10 Inventor: Won, Yuho   Kim, Yong Wook   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
6
US2020216755A1
QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020216755A1 Publication Date: 2020-07-09 Application Number: 16/817,902 Filing Date: 2020-03-13 Inventor: Jang, Hyo Sook   Won, Yuho   Hwang, Sungwoo   Kim, Ji Yeong   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/08 Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
7
EP3617292A1
ELECTRONIC DEVICE INCLUDING QUANTUM DOTS
Publication/Patent Number: EP3617292A1 Publication Date: 2020-03-04 Application Number: 19194390.1 Filing Date: 2019-08-29 Inventor: Won, Yuho   Kwon, Ha Il   Jang, Eun Joo   Chang, Jaejun   Chung, Dae Young   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/88 Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
8
US10711193B2
Quantum dots and production methods thereof, and quantum dot polymer composites and electronic devices including the same
Publication/Patent Number: US10711193B2 Publication Date: 2020-07-14 Application Number: 16/205,323 Filing Date: 2018-11-30 Inventor: Kim, Yongwook   Hwang, Sungwoo   Kwon, Soo Kyung   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.
9
US2020266373A1
ELECTROLUMINESCENT DISPLAY DEVICE
Publication/Patent Number: US2020266373A1 Publication Date: 2020-08-20 Application Number: 16/863,164 Filing Date: 2020-04-30 Inventor: Kim, Tae Hyung   Jang, Eun Joo   Chung, Dae Young   Kim, Yong Wook   Won, Yuho   Cho, Oul   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L51/50 Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.
10
EP3613826A1
LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
Publication/Patent Number: EP3613826A1 Publication Date: 2020-02-26 Application Number: 19193423.1 Filing Date: 2019-08-23 Inventor: Chung, Dae Young   Kim, Kwanghee   Seo, Hongkyu   Jang, Eun Joo   Cho, Oul   Kim, Tae Hyung   Won, Yuho   Lee, Heejae   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/02 Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
11
EP3613829A1
QUANTUM DOT DEVICE AND QUANTUM DOTS
Publication/Patent Number: EP3613829A1 Publication Date: 2020-02-26 Application Number: 19193277.1 Filing Date: 2019-08-23 Inventor: Kim, Jin A   Won, Yuho   Kim, Sung Woo   Kim, Tae Hyung   Lee, Jeong Hee   Jang, Eun Joo   Assignee: Samsung Electronics Co., Ltd.   IPC: C09K11/88 Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
12
US10647917B2
Semiconductor nanocrystal particles, production methods thereof, and devices including the same
Publication/Patent Number: US10647917B2 Publication Date: 2020-05-12 Application Number: 16/170,493 Filing Date: 2018-10-25 Inventor: Lee, Jeong Hee   Kang, Hyun A   Kim, Sung Woo   Kim, Jin A   Kim, Tae Hyung   Won, Yuho   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/02 Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
13
US2020063032A1
QUANTUM DOT DEVICE AND QUANTUM DOTS
Publication/Patent Number: US2020063032A1 Publication Date: 2020-02-27 Application Number: 16/549,430 Filing Date: 2019-08-23 Inventor: Kim, Jin A   Won, Yuho   Kim, Sung Woo   Kim, Tae Hyung   Lee, Jeong Hee   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
14
US10673004B2
Electroluminescent display device
Publication/Patent Number: US10673004B2 Publication Date: 2020-06-02 Application Number: 16/297,833 Filing Date: 2019-03-11 Inventor: Kim, Tae Hyung   Jang, Eun Joo   Chung, Dae Young   Kim, Yong Wook   Won, Yuho   Cho, Oul   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.
15
US2020083470A1
LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
Publication/Patent Number: US2020083470A1 Publication Date: 2020-03-12 Application Number: 16/549,472 Filing Date: 2019-08-23 Inventor: Chung, Dae Young   Kim, Kwanghee   Seo, Hongkyu   Jang, Eun Joo   Cho, Oul   Kim, Tae Hyung   Won, Yuho   Lee, Hee Jae   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L51/50 Abstract: A light emitting device, a method of manufacturing the same, and a display device including the same are disclosed. The light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, the emission layer including quantum dots, and a charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer includes a first surface facing the charge auxiliary layer and an opposite second surface, the quantum dots include a first organic ligand on a surface of the quantum dots, in the emission layer, an amount of the first organic ligand in a portion adjacent to the first surface is larger than an amount of the first organic ligand in a portion adjacent to the second surface.
16
US2020248073A1
SEMICONDUCTOR NANOCRYSTAL PARTICLES, PRODUCTION METHODS THEREOF, AND DEVICES INCLUDING THE SAME
Publication/Patent Number: US2020248073A1 Publication Date: 2020-08-06 Application Number: 16/851,625 Filing Date: 2020-04-17 Inventor: Lee, Jeong Hee   Kang, Hyun A   Kim, Sung Woo   Kim, Jin A   Kim, Tae Hyung   Won, Yuho   Jang, Eun Joo   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR   Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
17
US2020332189A1
SEMICONDUCTOR NANOCRYSTAL PARTICLES AND DEVICES INCLUDING THE SAME
Publication/Patent Number: US2020332189A1 Publication Date: 2020-10-22 Application Number: 16/851,495 Filing Date: 2020-04-17 Inventor: Lee, Jeong Hee   Jang, Hyo Sook   Kim, Sung Woo   Kim, Jin A   Kim, Tae Hyung   Won, Yuho   Jang, Eun Joo   Han, Yong Seok   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
18
US10808174B2
Process for preparing a quantum dot, a quantum dot prepared therefrom, and an electronic device including the same
Publication/Patent Number: US10808174B2 Publication Date: 2020-10-20 Application Number: 15/855,436 Filing Date: 2017-12-27 Inventor: Park, Young Seok   Park, Shang Hyeun   Jang, Eun Joo   Jang, Hyo Sook   Jun, Shin Ae   Chung, Dae Young   Kim, Taekhoon   Won, Yuho   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: C09K11/88 Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
19
US10559712B2
Quantum dots and devices including the same
Publication/Patent Number: US10559712B2 Publication Date: 2020-02-11 Application Number: 16/111,848 Filing Date: 2018-08-24 Inventor: Park, Garam   Kim, Tae Hyung   Jang, Eun Joo   Jang, Hyo Sook   Jun, Shin Ae   Kim, Yongwook   Kim, Taekhoon   Min, Jihyun   Won, Yuho   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L33/04 Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
20
US10619096B2
Population of quantum dots and a composition including the same
Publication/Patent Number: US10619096B2 Publication Date: 2020-04-14 Application Number: 16/245,594 Filing Date: 2019-01-11 Inventor: Park, Garam   Kim, Tae Gon   Won, Nayoun   Jun, Shin Ae   Kwon, Soo Kyung   Kim, Seon-yeong   Park, Shang Hyeun   Ahn, Jooyeon   Won, Yuho   Jang, Eun Joo   Jang, Hyo Sook   Assignee: SAMSUNG ELECTRONICS CO., LTD.   SAMSUNG DISPLAY CO., LTD.   SAMSUNG SDI CO., LTD.   IPC: H01L21/00 Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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