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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
TWM465636U
Fall-warning apparatus
Publication/Patent Number: TWM465636U Publication Date: 2013-11-11 Application Number: 102207871 Filing Date: 2013-04-29 Inventor: Wu hsin ling   Huang, Shih-ting   Yang, Hao-wen   Kuo, Chen-ning   Tseng, Yao-chen   Assignee: Wu hsin ling   HUANG, SHIH-TING   YANG, HAO-WEN   KUO, CHEN-NING   TSENG, YAO-CHEN   IPC: G08B21/02
2
DE10323728A1
Verfahren zur Verbesserung der Gleichmäßigkeit einer Fotolackschicht
Title (English): The method of improving uniformity of varnish coating.
Publication/Patent Number: DE10323728A1 Publication Date: 2004-08-26 Application Number: 10323728 Filing Date: 2003-05-26 Inventor: Chen, Meng Hung   Wu, Hsin Ling   Wu, Hung Mo   Lee, Chung Yuan   Assignee: NANYA TECHNOLOGY CORPORATION, KUEISHAN   IPC: G03F7/26 Abstract: Ein Verfahren zur Verbesserung der Gleichmäßigkeit einer Fotolackschicht und zur Herstellung einer unteren Elektrode eines Grabenkondensators. Zuerst wird ein Substrat mit einer Vielzahl von Gräben bereitgestellt. Dann wird eine Schutzfotolackschicht auf dem Substrat gebildet
3
TW577112B
Method of improving uniformity of photoresist layer
Publication/Patent Number: TW577112B Publication Date: 2004-02-21 Application Number: 92102762 Filing Date: 2003-02-11 Inventor: Lee, Chung-yuan   Chen, Mong-hung   Wu hsin ling   Wu, Hung-mo   Assignee: Nanya Technology Corporation   IPC: G03F7/26 Abstract: A method for improving uniformity of a photoresist layer. First
4
US2004157163A1
Method of improving photoresist layer uniformity
Publication/Patent Number: US2004157163A1 Publication Date: 2004-08-12 Application Number: 10/439,371 Filing Date: 2003-05-16 Inventor: Chen, Meng-hung   Wu hsin ling   Wu, Hung-mo   Lee, Chung-yuan   Assignee: Nanya Technology Corporation   IPC: G03F007/26 Abstract: A method for improving photoresist layer uniformity and fabricating a lower electrode of a trench capacitor. First, a substrate having a plurality of trenches is provided. Next, a protective photoresist layer is formed on the substrate to fill the trenches. Parts of the protective photoresist layer are removed to form first openings in trenches. A refill photoresist layer with a planar upper surface is blanketly formed to fill the first openings. The protective photoresist and/or the refill photoresist layer are recessed to leave a plurality of second openings with substantially equal depths in each of the trenches.
5
US2004157168A1
Method of improving pattern profile of thin photoresist layer
Publication/Patent Number: US2004157168A1 Publication Date: 2004-08-12 Application Number: 10/413,111 Filing Date: 2003-04-14 Inventor: Huang, Tse-yao   Duh, Shui-chyr   Chen, Yi-nan   Wu hsin ling   Assignee: Nanya Technology Corporation   IPC: G03F007/26 Abstract: A method of improving the pattern profile of a thin photoresist layer. First, a substrate is provided. Next, a thin patterned photoresist layer is formed on the substrate. An inert gas treatment is performed on the thin patterned photoresist layer. Finally, the substrate is etched using the thin patterned photoresist layer as a shield. According to the present invention, the thin patterned photoresist layer has an effective pattern profile for etching after inert gas treatment.
6
TW200415699A
Method of improving uniformity of photoresist layer
Publication/Patent Number: TW200415699A Publication Date: 2004-08-16 Application Number: 92102762 Filing Date: 2003-02-11 Inventor: Lee, Chung-yuan   Chen, Mong-hung   Wu hsin ling   Wu, Hung-mo   Assignee: Nanya Technology Corporation   IPC: G03F7/26 Abstract: A method for improving uniformity of a photoresist layer. First
7
TW200415700A
Method of improving pattern profile of thin phoresist layer
Publication/Patent Number: TW200415700A Publication Date: 2004-08-16 Application Number: 92102763 Filing Date: 2003-02-11 Inventor: Huang, Tse-yao   Chen, Yi-nan   Wu hsin ling   Duh, Shui-chyr   Assignee: Nanya Technology Corporation   IPC: G03F7/26 Abstract: A method of improving the pattern profile of the thin photoresist layer. First