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1
US10983339B2
Solid-state imaging element, pupil correction method for solid-state imaging element, imaging device, and information processing device
Publication/Patent Number: US10983339B2 Publication Date: 2021-04-20 Application Number: 16/322,335 Filing Date: 2017-08-01 Inventor: Yokogawa, Sozo   Assignee: SONY CORPORATION   IPC: H01L31/0232 Abstract: To suppress the reduction in transmission efficiency due to the change of the chief ray angle in spite of using structural color filters. A solid-state imaging element includes: a light receiving element included in a plurality of pixels; structural color filters located above at least part of the light receiving element and each including a metal film a periodic opening pattern with a structural period smaller than a prescribed wavelength; and an interconnection layer located below the light receiving element and configured to acquire a signal of light detected by the light receiving element. The structural period is different between the structural color filters in accordance with a chief ray angle of incident light, and the structural period of the periodic opening pattern becomes smaller as the chief ray angle becomes larger, relative to the structural period of the periodic opening pattern at the chief ray angle of 0°.
2
US10910504B2
Solid-state imaging element, imaging device, and method for manufacturing solid-state imaging element
Publication/Patent Number: US10910504B2 Publication Date: 2021-02-02 Application Number: 15/777,853 Filing Date: 2016-09-28 Inventor: Yokogawa, Sozo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L31/0236 Abstract: [Object] To propose a solid-state imaging element, an imaging device, and a method for manufacturing a solid-state imaging element that are capable of providing a pixel with polarization sensitivity while suppressing the reduction in sensitivity to non-polarized incident light. [Solution] A solid-state imaging element according to the present disclosure includes: a light receiving element included in a plurality of pixels; and a groove section provided on surfaces of at least some of the pixels in the light receiving element and extended along a prescribed direction. Two or more directions including at least mutually orthogonal two directions exist as a direction in which the groove section is extended.
3
EP3389092B1
SOLID-STATE IMAGE CAPTURE ELEMENT, IMAGE CAPTURE DEVICE, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURE ELEMENT
Publication/Patent Number: EP3389092B1 Publication Date: 2021-04-07 Application Number: 16872730.3 Filing Date: 2016-10-27 Inventor: Tanaka, Harumi   Oshiyama, Itaru   Yokogawa, Sozo   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146
4
US2021003672A1
DISTANCE MEASURING SYSTEM, LIGHT RECEIVING MODULE, AND METHOD OF MANUFACTURING BANDPASS FILTER
Publication/Patent Number: US2021003672A1 Publication Date: 2021-01-07 Application Number: 16/969,465 Filing Date: 2019-02-19 Inventor: Yokogawa, Sozo   Kikuchi, Yuki   Suwa, Taisuke   Chiyoda, Makoto   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: G01S7/481 Abstract: A distance measuring system includes a light source unit that emits infrared light toward a target object, a light receiving unit that receives the infrared light from the target object, and an arithmetic processing unit that obtains information regarding a distance to the target object on the basis of data from the light receiving unit, in which an optical member including a bandpass filter that is selectively transparent to infrared light in a predetermined wavelength range is arranged on a light receiving surface side of the light receiving unit, and the bandpass filter has a concave-shaped light incident surface.
5
US2021091135A1
IMAGE SENSOR, IMAGE SENSOR MANUFACTURING METHOD, ELECTRONIC DEVICE, AND IMAGING MODULE
Publication/Patent Number: US2021091135A1 Publication Date: 2021-03-25 Application Number: 16/611,973 Filing Date: 2018-05-01 Inventor: Yokogawa, Sozo   Murakami, Hirotaka   Ito, Mikinori   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or N front-side-illuminated CMOS image sensor.
6
US2020006407A1
SOLID STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US2020006407A1 Publication Date: 2020-01-02 Application Number: 16/563,582 Filing Date: 2019-09-06 Inventor: Yokogawa, Sozo   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
7
US202006407A1
SOLID STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US202006407A1 Publication Date: 2020-01-02 Application Number: 20/191,656 Filing Date: 2019-09-06 Inventor: Yokogawa, Sozo   Assignee: Sony Corporation   IPC: H01L31/0376 Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
8
US10728506B2
Optical filter, solid state imaging device, and electronic apparatus
Publication/Patent Number: US10728506B2 Publication Date: 2020-07-28 Application Number: 15/311,726 Filing Date: 2015-05-27 Inventor: Yokogawa, Sozo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N9/083 Abstract: An optical filter that suppresses the occurrence of color mixing due to wavelength components on the short wavelength side relative to the desired transmission component. The optical filter includes a metal thin-film filter in which a plurality of openings are periodically arranged, and a first dielectric layer that coats a surface of the metal thin-film filter and coats or fills an interior of the opening of the metal thin-film filter. The optical filter also includes a second dielectric layer having a refractive index lower than a refractive index of the first dielectric layer and formed at least on an incidence surface side of the metal thin-film filter. The present technology can be applied to a hole array filter.
9
EP2738810B1
SOLID-STATE IMAGING ELEMENT AND IMAGING SYSTEM
Publication/Patent Number: EP2738810B1 Publication Date: 2020-02-12 Application Number: 12817111.3 Filing Date: 2012-07-11 Inventor: Yokogawa, Sozo   Assignee: Sony Corporation   IPC: H01L27/14
10
US2020227467A1
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020227467A1 Publication Date: 2020-07-16 Application Number: 16/640,939 Filing Date: 2018-07-13 Inventor: Yokogawa, Sozo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: An imaging device includes a first photoelectric conversion region (170) receiving light within a first range of wavelengths, a second photoelectric conversion region (170) receiving light within a second range of wavelengths, and a third photoelectric conversion region (170) receiving light within a third range of wavelengths. At least a portion of a light-receiving surface of the first photoelectric conversion region has a first concave-convex structure (113), and a light-receiving surface of the second photoelectric conversion region has a different structure (111) than the first concave-convex structure.
11
US2020194473A1
SOLID STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Publication/Patent Number: US2020194473A1 Publication Date: 2020-06-18 Application Number: 16/797,922 Filing Date: 2020-02-21 Inventor: Yokogawa, Sozo   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
12
US2020145595A1
SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020145595A1 Publication Date: 2020-05-07 Application Number: 16/738,236 Filing Date: 2020-01-09 Inventor: Yokogawa, Sozo   Hirota, Isao   Assignee: Sony Corporation   IPC: H04N5/369 Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
13
US10587829B2
Solid-state image pickup device and electronic apparatus
Publication/Patent Number: US10587829B2 Publication Date: 2020-03-10 Application Number: 16/291,427 Filing Date: 2019-03-04 Inventor: Yokogawa, Sozo   Hirota, Isao   Assignee: Sony Corporation   IPC: H04N5/369 Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
14
EP3595008A2
SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3595008A2 Publication Date: 2020-01-15 Application Number: 19193816.6 Filing Date: 2015-12-08 Inventor: Yokogawa, Sozo   Hirota, Isao   Assignee: Sony Corporation   IPC: H01L27/14 Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.