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1
US2020321484A1
PN JUNCTION AND PREPARATION METHOD AND USE THEREOF
Publication/Patent Number: US2020321484A1 Publication Date: 2020-10-08 Application Number: 16/837,189 Filing Date: 2020-04-01 Inventor: Gao, Liang   Zhang, Zhun   Lin, Yu-ting   Assignee: Sunflare (Nanjing) Energy Technology Ltd   IPC: H01L31/032 Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.
2
EP3719854A1
PN JUNCTION AND PREPARATION METHOD AND USE THEREOF
Publication/Patent Number: EP3719854A1 Publication Date: 2020-10-07 Application Number: 20167490.0 Filing Date: 2020-04-01 Inventor: Gao, Liang   Zhang, Zhun   Lin, Yu-ting   Assignee: Sunflare (Nanjing) Energy Technology Ltd.   IPC: H01L31/032 Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1. x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.
3
US2019317125A1
MICROSCOPY SAMPLE STAGE FOR GAS HYDRATE TESTS AND TEMPERATURE AND PRESSURE CONTROLLING SYSTEM OF THE STAGE
Publication/Patent Number: US2019317125A1 Publication Date: 2019-10-17 Application Number: 16/384,988 Filing Date: 2019-04-16 Inventor: Ning, Fulong   Peng, Li   Li, Wei   Wang, Dongdong   Zhang, Ling   Ou, Wenjia   Zhang, Zhun   Zou, Zhong   Assignee: China University of Geosciences (Wuhan)   IPC: G01Q30/10 Abstract: A microscopy sample stage includes a microscope carrier platform, a heating conductor mounting on the microscope carrier platform, and a pressure cover covering the sample groove for providing high pressure for the sample groove. The heating conductor includes a sample groove. The microscopy sample stage further includes a temperature sensor for detecting temperature of the sample groove, a heating resistance for heating the sample groove and a pipeline for transmitting refrigeration medium, the temperature sensor and the heating resistance are mounted on a bottom surface of the sample groove, and the pipeline is arranged inside the heat conductor surrounding the sample groove.
4
EP2876696B1
METHOD FOR PREPARING COPPER INDIUM GALLIUM SELENIDE FILM SOLAR CELL
Publication/Patent Number: EP2876696B1 Publication Date: 2018-11-28 Application Number: 13820355.9 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: C23C14/06 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
5
EP2860768B1
METHOD FOR PREPARING COPPER INDIUM GALLIUM DISELENIDE THIN-FILM SOLAR CELL
Publication/Patent Number: EP2860768B1 Publication Date: 2017-06-07 Application Number: 13804992.9 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
6
EP2860768A4
METHOD FOR PREPARING COPPER INDIUM GALLIUM DISELENIDE THIN-FILM SOLAR CELL
Publication/Patent Number: EP2860768A4 Publication Date: 2016-02-17 Application Number: 13804992 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: C23C14/34 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
7
EP2876696A1
METHOD FOR PREPARING COPPER INDIUM GALLIUM SELENIDE FILM SOLAR CELL
Publication/Patent Number: EP2876696A1 Publication Date: 2015-05-27 Application Number: 13820355.9 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
8
US9105801B2
Method for fabricating Cu—In—Ga—Se film solar cell
Publication/Patent Number: US9105801B2 Publication Date: 2015-08-11 Application Number: 14/153,028 Filing Date: 2014-01-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
9
EP2876696A4
METHOD FOR PREPARING COPPER INDIUM GALLIUM SELENIDE FILM SOLAR CELL
Publication/Patent Number: EP2876696A4 Publication Date: 2015-12-30 Application Number: 13820355 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: C23C14/06 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In 2 Se 3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In 2 Se 3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
10
EP2860768A1
METHOD FOR PREPARING COPPER INDIUM GALLIUM DISELENIDE THIN-FILM SOLAR CELL
Publication/Patent Number: EP2860768A1 Publication Date: 2015-04-15 Application Number: 13804992.9 Filing Date: 2013-04-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu-In-Ga-Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu-In-Ga-Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu-In-Ga-Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
11
US8969124B2
Method for fabricating Cu—In—Ga—Se film solar cell
Publication/Patent Number: US8969124B2 Publication Date: 2015-03-03 Application Number: 14/153,026 Filing Date: 2014-01-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L21/00 Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
12
US2015017755A1
Method for fabricating Cu-In-Ga-Se Film Solar Cell
Publication/Patent Number: US2015017755A1 Publication Date: 2015-01-15 Application Number: 14/153,026 Filing Date: 2014-01-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
13
US2014193943A1
METHOD FOR FABRICATING Cu-In-Ga-Se FILM SOLAR CELL
Publication/Patent Number: US2014193943A1 Publication Date: 2014-07-10 Application Number: 14/153,028 Filing Date: 2014-01-11 Inventor: Lin, Liuyu   Zhang, Zhun   Assignee: Lin, Liuyu   Zhang, Zhun   IPC: H01L31/18 Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
14
WO2014012383A1
METHOD FOR PREPARING COPPER INDIUM GALLIUM SELENIDE FILM SOLAR CELL
Publication/Patent Number: WO2014012383A1 Publication Date: 2014-01-23 Application Number: 2013074096 Filing Date: 2013-04-11 Inventor: Zhang, Zhun   Lin, Liuyu   Assignee: ZHANG, ZHUN   LIN, LIUYU   IPC: C23C14/34 Abstract: The invention relates to a method for preparing a copper indium gallium selenide film solar cell. The method comprises: a) preparing a Mo back electrode on a substrate; b) preparing a copper indium gallium selenide absorbing layer on the Mo back electrode
15
WO2013185506A1
METHOD FOR PREPARING COPPER INDIUM GALLIUM DISELENIDE THIN-FILM SOLAR CELL
Publication/Patent Number: WO2013185506A1 Publication Date: 2013-12-19 Application Number: 2013074072 Filing Date: 2013-04-11 Inventor: Zhang, Zhun   Lin, Liuyu   Assignee: ZHANG, ZHUN   LIN, LIUYU   IPC: C23C14/35 Abstract: The present invention relates to a method for preparing a copper indium gallium diselenide thin-film solar cell
16
US7864521B2
Enclosure for electronic device
Publication/Patent Number: US7864521B2 Publication Date: 2011-01-04 Application Number: 12/487,298 Filing Date: 2009-06-18 Inventor: Chen, Yun-lung   Zhang zhun liang   Luo, Pei-bin   Assignee: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.   Hon Hai Precision Industry Co., Ltd.   IPC: G06F1/16 Abstract: An enclosure for electronic device, includes a chassis and a cover. The chassis defines an opening. The chassis includes a drive bracket mounted therein. The drive bracket includes a side plate facing the opening. A through hole is defined in the side plate. A rotating member is pivotally mounted on the side plate. The rotating member includes a positioning pin. A data storage device is received in the drive bracket. The data storage device defines a locking hole in alignment with the through hole of the side plate. The cover is mounted on the chassis to cover the opening of the chassis. The cover abuts the rotating member so that the positioning pin is inserted in the through hole and the locking hole to secure the data storage device in the drive bracket of the chassis.
17
US2010172082A1
ENCLOSURE FOR ELECTRONIC DEVICE
Publication/Patent Number: US2010172082A1 Publication Date: 2010-07-08 Application Number: 12/487,298 Filing Date: 2009-06-18 Inventor: Chen, Yun-lung   Zhang zhun liang   Luo, Pei-bin   Assignee: HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.   HON HAI PRECISION INDUSTRY CO., LTD.   IPC: H05K5/00 Abstract: An enclosure for electronic device, includes a chassis and a cover. The chassis defines an opening. The chassis includes a drive bracket mounted therein. The drive bracket includes a side plate facing the opening. A through hole is defined in the side plate. A rotating member is pivotally mounted on the side plate. The rotating member includes a positioning pin. A data storage device is received in the drive bracket. The data storage device defines a locking hole in alignment with the through hole of the side plate. The cover is mounted on the chassis to cover the opening of the chassis. The cover abuts the rotating member so that the positioning pin is inserted in the through hole and the locking hole to secure the data storage device in the drive bracket of the chassis.
18
WO2007018894A3
A KIT OF LYOPHILIZED THROMBIN AND LYOPHILIZED FIBRINOGEN USED TO COMPOUND FIBRIN MEMBRANE
Publication/Patent Number: WO2007018894A3 Publication Date: 2009-01-08 Application Number: 2006026739 Filing Date: 2006-07-11 Inventor: Hoang, Kieu   Shu, Bixiong   Xia, Zhao   Junhui, Li   Meecham, Thu Ho   Zhang, Zhun   Assignee: HOANG, KIEU   SHU, BIXIONG   XIA, ZHAO   JUNHUI, LI   MEECHAM, THU, HO   ZHANG, ZHUN   IPC: A61K38/48 Abstract: A kit of lyophilized thrombin and lyophilized fibrinogen comprises fibrinogen of 50- 100 mg/ml
19
EP1924278A4
A KIT OF LYOPHILIZED THROMBIN AND LYOPHILIZED FIBRINOGEN USED TO COMPOUND FIBRIN MEMBRANE
Publication/Patent Number: EP1924278A4 Publication Date: 2009-08-12 Application Number: 06786779 Filing Date: 2006-07-11 Inventor: Zhang, Zhun   Meecham, Thu Ho   Shu, Bixiong   Xia, Zhao   Junhui, Li   Hoang, Kieu   Assignee: Hoang, Kieu   IPC: A61K38/48
20
TWM359177U
Electronic device enclosure
Publication/Patent Number: TWM359177U Publication Date: 2009-06-11 Application Number: 98200842 Filing Date: 2009-01-16 Inventor: Chen, Yun-lung   Luo, Pei-bin   Zhang zhun liang   Assignee: Hon Hai Precision Industry Co., Ltd.   IPC: H05K5/00
Total 2 pages