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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
US10734434B2
Vertical overflow drain combined with vertical transistor
Publication/Patent Number: US10734434B2 Publication Date: 2020-08-04 Application Number: 15/984,136 Filing Date: 2018-05-18 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson   Grant, Lindsay   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
2
US10566364B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10566364B2 Publication Date: 2020-02-18 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
3
US2020105807A1
MULTI-THICKNESS GATE DIELECTRIC
Publication/Patent Number: US2020105807A1 Publication Date: 2020-04-02 Application Number: 16/149,544 Filing Date: 2018-10-02 Inventor: Chen, Gang   Zheng yuanwei   Wang, Qin   Yang, Cunyu   Chen, Guannan   Mao, Duli   Tai, Dyson   Grant, Lindsay   Webster, Eric   Hu, Sing-chung   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
4
US2019355778A1
VERTICAL OVERFLOW DRAIN COMBINED WITH VERTICAL TRANSISTOR
Publication/Patent Number: US2019355778A1 Publication Date: 2019-11-21 Application Number: 15/984,136 Filing Date: 2018-05-18 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson   Grant, Lindsay   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
5
US10269850B2
Biased deep trench isolation
Publication/Patent Number: US10269850B2 Publication Date: 2019-04-23 Application Number: 15/717,047 Filing Date: 2017-09-27 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Ma, Yi   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
6
US10290670B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10290670B2 Publication Date: 2019-05-14 Application Number: 15/195,926 Filing Date: 2016-06-28 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
7
US2019181173A1
RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
Publication/Patent Number: US2019181173A1 Publication Date: 2019-06-13 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
8
US10418408B1
Curved image sensor using thermal plastic substrate material
Publication/Patent Number: US10418408B1 Publication Date: 2019-09-17 Application Number: 16/016,057 Filing Date: 2018-06-22 Inventor: Zheng yuanwei   Miao, Chia-chun   Chen, Gang   Qian, Yin   Mao, Duli   Tai, Dyson H.   Grant, Lindsay   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.
9
US2018033811A1
BIASED DEEP TRENCH ISOLATION
Publication/Patent Number: US2018033811A1 Publication Date: 2018-02-01 Application Number: 15/717,047 Filing Date: 2017-09-27 Inventor: Ma, Yi   Mao, Duli   Chen, Gang   Qian, Yin   Zheng yuanwei   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
10
TW201813068A
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: TW201813068A Publication Date: 2018-04-01 Application Number: 106120973 Filing Date: 2017-06-21 Inventor: Chen, Gang   Mao, Duli   Tai, Dyson Hsinchih   Zheng yuanwei   Liu, Lequn   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
11
US2017221951A1
THROUGH-SEMICONDUCTOR-VIA CAPPING LAYER AS ETCH STOP LAYER
Publication/Patent Number: US2017221951A1 Publication Date: 2017-08-03 Application Number: 15/014,787 Filing Date: 2016-02-03 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.
12
US9564470B1
Hard mask as contact etch stop layer in image sensors
Publication/Patent Number: US9564470B1 Publication Date: 2017-02-07 Application Number: 15/272,164 Filing Date: 2016-09-21 Inventor: Chen, Gang   Zheng yuanwei   Mao, Duli   Tai, Dyson   Assignee: OmniVision Technologies, Inc.   IPC: H01L31/18 Abstract: A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of dielectric material is disposed between the layer of gate material and a semiconductor material, and the layer of gate material is disposed between the layer of hard mask material and the layer of dielectric material. The method also includes etching the layer of hard mask material and layer of gate material, and etching forms a transfer gate from the layer of gate material. An encapsulation material is deposited proximate to a surface of the semiconductor material. Trenches are etched in the encapsulation material. A first trench extends through the encapsulation material and the layer of dielectric material, and a second trench extends through the encapsulation material and the layer of hard mask material.
13
TW201729406A
Hard mask as contact etch stop layer in image sensors
Publication/Patent Number: TW201729406A Publication Date: 2017-08-16 Application Number: 105127042 Filing Date: 2016-08-24 Inventor: Chen, Gang   Mao, Duli   Tai, Dyson   Zheng yuanwei   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material
14
US9773829B2
Through-semiconductor-via capping layer as etch stop layer
Publication/Patent Number: US9773829B2 Publication Date: 2017-09-26 Application Number: 15/014,787 Filing Date: 2016-02-03 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/14 Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.
15
TW201740550A
Through-semiconductor-via capping layer as etch stop layer
Publication/Patent Number: TW201740550A Publication Date: 2017-11-16 Application Number: 106101472 Filing Date: 2017-01-17 Inventor: Chen, Gang   Mao, Duli   Tai, Dyson H   Zheng yuanwei   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.
16
US2017373109A1
RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
Publication/Patent Number: US2017373109A1 Publication Date: 2017-12-28 Application Number: 20/161,519 Filing Date: 2016-06-28 Inventor: Mao, Duli   Chen, Gang   Qian, Yin   Zheng yuanwei   Tai, Dyson H   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index
17
TWI567962B
Storage transistor with optical isolation
Publication/Patent Number: TWI567962B Publication Date: 2017-01-21 Application Number: 105101416 Filing Date: 2016-01-18 Inventor: Chen, Gang   Mao, Duli   Tai, Dyson H   Zheng yuanwei   Yi, Xianmin   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region
18
TW201735336A
Biased deep trench isolation
Publication/Patent Number: TW201735336A Publication Date: 2017-10-01 Application Number: 106108343 Filing Date: 2017-03-14 Inventor: Ma, Yi   Chen, Gang   Mao, Duli   Tai, Dyson H   Zheng yuanwei   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L21/76 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material
19
US9806117B2
Biased deep trench isolation
Publication/Patent Number: US9806117B2 Publication Date: 2017-10-31 Application Number: 15/071,035 Filing Date: 2016-03-15 Inventor: Zheng yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Ma, Yi   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/14 Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.
20
TWI599027B
Blue enhanced image sensor
Publication/Patent Number: TWI599027B Publication Date: 2017-09-11 Application Number: 105101577 Filing Date: 2016-01-19 Inventor: Kumar, Arvind   Chen, Gang   Mao, Duli   Hsiung, Chih Wei   Tai, Dyson H   Zheng yuanwei   Assignee: OMNIVISION TECHNOLOGIES, INC.   IPC: H01L27/146 Abstract: A back side illuminated image sensor includes a semiconductor material having a from side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side