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1
US2021017449A1
PREPARATION METHOD FOR QUANTUM DOTS
Publication/Patent Number: US2021017449A1 Publication Date: 2021-01-21 Application Number: 17/043,636 Filing Date: 2019-10-09 Inventor: Cheng, Luling   Yang, Yixing   Assignee: TCL TECHNOLOGY GROUP CORPORATION   IPC: C09K11/88 Abstract: The present application discloses a preparation method for quantum dots (QDs). The method includes providing initial QD cores, and mixing the initial QD cores with an organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores; preparing a shell layer on the surface of the initial QD cores in a shell-growth reaction system containing an organic carboxylic acid; and mixing and heating the solution system, obtained after a completion of shell-layer growth reaction, with an organic amine, an organic phosphine, or a mixed solution of the organic amine and the organic phosphine.
2
US2021040387A1
METHOD FOR PRODUCING A QUANTUM DOT NANOPARTICLES, QUANTUM DOT NANOPARTICLES PREPARED BY THE METHOD, QUANTUM DOT NANOPARTICLES HAVING A CORE-SHELL STRUCTURE, AND LIGHT EMITTING ELEMENT
Publication/Patent Number: US2021040387A1 Publication Date: 2021-02-11 Application Number: 16/941,746 Filing Date: 2020-07-29 Inventor: Hong, Seung Mo   Song, Jin Han   Hong, Hyeok Jin   Park, Seok Kyu   Lee, Ju Young   Lee, In Won   Assignee: SHIN-A T&C   UNIAM   IPC: C09K11/88 Abstract: A method of preparing a quantum dot nanoparticle is disclosed. The method includes the step of reacting one or more cation precursors including one or more of Groups 12 and 13 elements with one or more anion precursors including one or more of Group 15 elements to prepare a quantum dot nanoparticle, wherein the reaction of the cation precursors and the anion precursors is carried out while supplying a compound represented by Chemical Formula 1. A quantum dot nanoparticle prepared by the preparation method, a quantum dot nanoparticle having a core-shell structure containing the quantum dot nanoparticle as a core, and a light emitting element comprising the quantum dot nanoparticle having a core-shell structure are also disclosed.
3
CN112340710A
一种高质量碲量子点的制备方法
Public
Publication/Patent Number: CN112340710A Publication Date: 2021-02-09 Application Number: 202011307198.X Filing Date: 2020-11-19 Inventor: 曹海亮   赵敏   郭俊杰   Assignee: 太原理工大学   IPC: C01B19/02 Abstract: 本发明涉及一种高质量碲量子点的制备方法,属于纳米材料技术领域,解决碲单质尺寸降低至量子点的技术问题,本发明包括以下步骤:首先,将碲单质粉体在研钵中研磨;其次,将研磨好的碲粉体与溶剂均匀混合制得混合液;再次,对混合液进行超声剥离;最后,超声剥离后的产物进行离心分级,制得碲量子点。本发明所制备的碲量子点具有较高浓度、高质量且形貌均一,可用于新能源器件及光电器件的电极材料。本发明反应条件温和,制备工艺简单,便于宏量制备,制备得到的碲量子点大小均一、纯度高。
4
CN112366242A
一种基于核壳量子点掺杂PHPS/PMMA的单晶硅平板型荧光太阳集光器的制备方法
Public
Publication/Patent Number: CN112366242A Publication Date: 2021-02-12 Application Number: 202011143174.5 Filing Date: 2020-10-23 Inventor: 金佳明   张晓伟   束俊鹏   伍淑涵   方嘉雄   贺绮琪   陈淳   高英杰   Assignee: 宁波大学   IPC: H01L31/055 Abstract: 本发明公开了一种基于核壳量子点掺杂PHPS/PMMA的单晶硅平板型荧光太阳集光器的制备方法,特点是包括发光中心材料铜铝铟硫/硒化锌核壳量子点制备的步骤;将全氢聚硅氮烷、聚甲基丙烯酸甲酯混合后不断搅拌,混合均匀,得到前驱液A,将CAIS/ZnSe核壳量子溶解于二甲苯中,搅拌混合得到前驱液B;然后将前驱液A和前驱液B按体积比10:1的比例在旋涡混合器上混合振荡后超声处理,置于真空干燥箱中抽气后装入模具中,采用真空加热的方法进行紫外光固化,固化脱模后,再经过切割、抛光工艺,即得到基于核壳量子点掺杂PHPS/PMMA的单晶硅平板型荧光太阳集光器,优点是光子输运效率高且集光效率高。
5
CN107119327B
一种制备大面积不开裂胶体光子晶体膜的方法
Grant
Publication/Patent Number: CN107119327B Publication Date: 2021-02-19 Application Number: 201710225398.2 Filing Date: 2017-04-07 Inventor: 陈苏   朱志杰   张静   Assignee: 南京捷纳思新材料有限公司   IPC: C30B29/58 Abstract: 本发明公开了一种制备大面积不开裂胶体光子晶体膜的方法,具体步骤如下:将水性聚氨酯乳液分散到胶体粒子溶液中;然后以配制成的均相溶液为涂膜液,用丝棒在亲水基底上刮涂出大面积胶体光子晶体膜;再在胶体光子晶体膜的表面旋涂一层量子点。利用胶体光子晶体在可见光区域的共振效应可以显著增强量子点的荧光信号。本发明克服了传统胶体光子晶体膜易开裂的缺点,具有操作简单,条件温和,易于大面积施工等优点,所制备的胶体光子晶体和量子点复合膜具有很高的荧光强度和荧光稳定性,可以为快速制备高功率QD‑LED器件提供思路。
6
CN112368357A
具有各向异性的吸收和各向异性的发射的纳米结构的形状
Public
Publication/Patent Number: CN112368357A Publication Date: 2021-02-12 Application Number: 201980040060.7 Filing Date: 2019-06-17 Inventor: 克里斯蒂安·奈易特司   耶詹·吴赛木拜耶   Assignee: 根特大学   IPC: C09K11/02 Abstract: 本发明涉及一种至少包括第一部分(101)和第二部分(102)的纳米结构的形状(100)。第一部分具有纵向轴线L并且包括第一吸收材料(108)和发射材料(110)。第二部分连接到第一部分,并且包括第二吸收材料(112)。第二部分主要吸收具有与第一部分的长轴线L不同的偏振方向的光,并且纳米结构的形状发射主要沿第一部分的长轴线L偏振的光。本发明还涉及一种纳米结构的形状的组件、一种合成纳米结构的形状的方法以及一种包括这种纳米结构的形状的偏振光发射板。
7
CN112384594A
包含半导体发光纳米粒子的组合物
Public
Publication/Patent Number: CN112384594A Publication Date: 2021-02-19 Application Number: 201980043674.0 Filing Date: 2019-07-02 Inventor: D·格罗兹曼   E·沙维夫   平山裕树   铃木照晃   C-h·库彻恩塞尔   Assignee: 默克专利股份有限公司   IPC: C09K11/02 Abstract: 本发明涉及一种组合物及一种制造组合物的方法。
8
CN112175604A
一种多层包覆结构的复合粉体以及制备方法、应用
Substantial Examination
Publication/Patent Number: CN112175604A Publication Date: 2021-01-05 Application Number: 201910597799.X Filing Date: 2019-07-04 Inventor: 钟海政   汤加伦   Assignee: 致晶科技(北京)有限公司   IPC: C09K11/02 Abstract: 本申请公开了一种多层包覆结构的复合粉体及其制备方法、应用。所述复合粉体包括微球基质、量子点材料以及包覆层;所述量子点材料埋附在所述微球基质上,形成量子点/微球基质;所述包覆层包覆在所述量子点/微球基质上;其中,所述包覆层包括至少一层有机聚合物层。保持了高的量子点发光效率,且具有耐候性好的优点,尤其在高温高湿的环境下,是一种优异的荧光转换型材料。
9
CN112375569A
一种高荧光率InP/ZnSe/ZnS核壳纳米晶体及其制备方法
Public
Publication/Patent Number: CN112375569A Publication Date: 2021-02-19 Application Number: 202011264491.2 Filing Date: 2020-11-12 Inventor: 于斌   周亮亮   屈军乐   林丹樱   曹慧群   Assignee: 深圳大学   IPC: C09K11/88 Abstract: 本发明提供了一种高荧光率InP/ZnSe/ZnS核壳纳米晶体及其制备方法,所述制备方法包括步骤:以醋酸铟和三(三甲基硅烷基)膦分别作为制备InP晶体核的铟前驱体和磷前驱体,在制得InP晶体核后,在所述InP晶体核上依次制备ZnSe过渡层以及ZnS壳层,制得所述高荧光率InP/ZnSe/ZnS核壳纳米晶体。本发明采用两步化学液相合成法进行核壳制备,通过排气和真空处理,有效降低实验中氧等杂质对InP核壳纳米晶体的污染,有利于提高窄半高宽和高质量荧光量子效率,开发出一种ZnSe过渡层包裹InP内核,有效降低InP/ZnS晶格失配率的同时钝化InP内核表面的悬挂键,能提高荧光量子效率。
10
US2021054273A1
SEMICONDUCTOR NANOPARTICLES AND CORE/SHELL SEMICONDUCTOR NANOPARTICLES
Publication/Patent Number: US2021054273A1 Publication Date: 2021-02-25 Application Number: 16/958,294 Filing Date: 2018-12-19 Inventor: Moriyama, Takafumi   Motoyoshi, Ryosuke   Assignee: SHOEI CHEMICAL INC.   IPC: C09K11/88 Abstract: An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.
11
US2021009900A1
BLUE-EMITTING NANOCRYSTALS WITH CUBIC SHAPE AND FLUORIDE PASSIVATION
Publication/Patent Number: US2021009900A1 Publication Date: 2021-01-14 Application Number: 16/925,799 Filing Date: 2020-07-10 Inventor: Newmeyer, Benjamin   Ippen, Christian   Ma, Ruiqing   Barrera, Diego   Manders, Jesse Robert   Assignee: Nanosys, Inc.   IPC: C09K11/88 Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
12
CN108485647B
一种荧光量子点/氧化物复合材料的制备方法及其产品和用途
Grant
Publication/Patent Number: CN108485647B Publication Date: 2021-01-15 Application Number: 201810235735.0 Filing Date: 2018-03-21 Inventor: 孙小卫   王恺   周劭臣   Assignee: 深圳扑浪创新科技有限公司   南方科技大学   IPC: C09K11/02 Abstract: 本发明涉及一种荧光量子点/氧化物复合材料的制备方法及其产品和用途。所述制备方法包括如下步骤:(1)配制荧光量子点的有机溶液;(2)制备金属氧化物纳米管阵列膜,记为MO纳米管阵列膜;(3)将荧光量子点的有机溶液涂覆在MO纳米管阵列膜上,在负压的作用下将荧光量子点填充至MO纳米管阵列中,得到荧光量子点/氧化物复合材料。本发明利用负压的作用将荧光量子点填充到金属氧化物纳米管的中空结构中,相较于化学沉积法更简便,不需要繁复的后处理步骤,且量子点光稳定性的提高更加显著。优选方案是将物理填充和化学包覆综合起来,得到复合结构更加稳定的荧光量子点/氧化物复合材料,物理填充作用和化学包覆作用协同提高了量子点光稳定性。
13
CN112195027A
一种发光微球及其制备方法
Substantial Examination
Publication/Patent Number: CN112195027A Publication Date: 2021-01-08 Application Number: 202010991623.5 Filing Date: 2020-09-21 Inventor: 刘光   赵宝杰   刘海鹏   王奕   Assignee: 天津纳美纳米科技有限公司   IPC: C09K11/88 Abstract: 本发明属于发光材料技术领域,具体地说,涉及一种发光微球及其制备方法。所述制备方法包括:1)制备氧化镉掺杂的二氧化硅微球;2)将二氧化硅微球放入十八烯/油酸或三辛胺/油酸的混合溶液中,加热至沸腾,微球高温溶胀,油酸渗入微球内与CdO反应形成吸附有有机镉的二氧化硅悬浮液;3)向所得的吸附有有机镉的二氧化硅悬浮液中加入硒前驱体,与吸附的有机镉反应,形成CdSe,得到发光微球。本发明所提供的发光微球的荧光效率高,稳定性好,不用阻隔膜等阻隔材料保护,能直接用于高色域的发光膜、发光板、Mini‑Led和Micro‑Led等光转化材料等。
14
CN109976089B
一种量子点光刻胶及其制备方法、量子点彩膜的制备方法
Grant
Publication/Patent Number: CN109976089B Publication Date: 2021-01-12 Application Number: 201711448281.7 Filing Date: 2017-12-27 Inventor: 朱舒卷   曹蔚然   Assignee: TCL科技集团股份有限公司   IPC: G03F7/004 Abstract: 本发明公开了一种量子点光刻胶及其制备方法、量子点彩膜的制备方法,其中,所述量子点光刻胶,包括光刻胶基材以及掺杂在所述光刻胶基材中的量子点材料,所述量子点材料表面结合有有机配体,通过有机配体的配位作用既提高了量子点的发光强度,又可以防止量子点团聚,提高了量子点的稳定性,进而可以通过光刻的方式即形成稳定的量子点彩膜,易于实现量产,解决了现有制备量子点彩膜的工艺复杂且所制备的量子点彩膜质量不佳的问题。
15
CN112251220A
基于荧光量子点复合薄膜的湿度传感器及其制备方法
Substantial Examination
Publication/Patent Number: CN112251220A Publication Date: 2021-01-22 Application Number: 202011205680.2 Filing Date: 2020-11-02 Inventor: 邢晓波   夏鹏飞   吕家充   许坤远   王天赐   罗芳婧   李瑶   杨观杰   王海燕   黄建林   何浩培   Assignee: 华南师范大学   IPC: C09K11/02 Abstract: 本发明公开一种基于荧光量子点复合薄膜的湿度传感器及其制备方法。制备方法包括:在透明衬底上制作形成防凝聚层;在所述防凝聚层上制作形成荧光量子点层,所述荧光量子点层包含羧基修饰的量子点。湿度传感器通过荧光量子点的荧光变化,对环境湿度进行有效的特异性检测,有效避免了量子点由于成膜过程中出现的团聚现象,其具有灵敏度高,选择性好,稳定性好,寿命持久,方便携带等许多优势,在航空航天、工业生产、环境监测等领域具有良好的的应用前景。
16
CN111410962B
一种多肽-量子点复合探针、制备方法和应用
Grant
Publication/Patent Number: CN111410962B Publication Date: 2021-02-02 Application Number: 202010226767.1 Filing Date: 2020-03-27 Inventor: 肖建喜   蔡向东   Assignee: 兰州大学   IPC: G01N33/533 Abstract: 本发明提供了一种多肽‑量子点复合探针,所述多肽‑量子点复合探针以谷胱甘肽为量子点表面修饰剂,以末端为Cys的带电荷的氨基酸短链为连接基团修饰多肽序列获得靶向多肽(Cys‑X)‑Targeting domain。本发明还提供了多肽‑量子点复合探针的制备方法:将Te溶液与Cd溶液混合加热至回流,缓慢滴加合成的靶向多肽(Cys‑X)‑Targeting domain溶液,回流15‑300min。本发明所述多肽‑量子点复合探针以谷胱甘肽为量子点表面修饰剂,能够与靶向多肽中的Cys兼容,制备的多肽‑量子点复合探针稳定性良好;谷胱甘肽为人体中自然合成的肽,生物相容性好、毒性低;并且该方法条件温和、绿色环保、工艺简单,不需进一步的量子点修饰即可一步合成,制备的多肽‑量子点复合探针可用于体内成像。
17
CN112159652A
一种CdSe/CdS核壳层结构量子点的制备方法
Substantial Examination
Publication/Patent Number: CN112159652A Publication Date: 2021-01-01 Application Number: 202010983001.8 Filing Date: 2020-09-18 Inventor: 陆峥   马楚芳   王利   林翔   赵海燕   Assignee: 大连民族大学   IPC: C09K11/02 Abstract: 一种CdSe/CdS核壳层结构量子点的制备方法,属于半导体与发光纳米材料技术领域。本发明首先将氧化铬、石蜡和油酸加入到烧瓶中,硒粉和石蜡加入另一烧瓶中氮气保护加热得到前驱体溶液,然后在硒前驱体中加入油胺后加入到镉前驱体中,之后将二水合醋酸镉溶于液体石蜡作为CdS壳层的壳层镉前驱体溶液并将九水合硫化钠粉末,加入到4CdSe量子点原液中滴入(壳层镉前驱体溶液,反应生成均匀的CdSe/Cds核壳层结构量子点原液。本发明制备的量子点尺寸大,尺寸分布均一,性能较好,在光致发光、电致发光材料或是应用于生物领域都有着很好的前景。同时制备方法工艺简单易行,重复性好。
18
US2021020858A1
COMPOSITE MATERIAL AND QUANTUM DOT LIGHT EMITTING DIODE
Publication/Patent Number: US2021020858A1 Publication Date: 2021-01-21 Application Number: 17/039,657 Filing Date: 2020-09-30 Inventor: Qin, Huijun   Assignee: TCL TECHNOLOGY GROUP CORPORATION   IPC: H01L51/50 Abstract: A composite material includes a light-emitting quantum dot, and a first ligand and a second ligand bound on a surface of the light-emitting quantum dot. The first ligand includes an oil-soluble organic ligand, and the second ligand including a halogen ligand or a water-soluble ligand.
19
US2021040388A1
ELECTRONIC DEVICE INCLUDING QUANTUM DOTS
Publication/Patent Number: US2021040388A1 Publication Date: 2021-02-11 Application Number: 17/083,470 Filing Date: 2020-10-29 Inventor: Won, Yuho   Kwon, Ha Il   Jang, Eun Joo   Chang, Jaejun   Chung, Dae Young   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: C09K11/88 Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
20
US2021018671A1
WAVELENGTH CONVERSION MEMBER, BACKLIGHT UNIT AND IMAGE DISPLAY DEVICE
Publication/Patent Number: US2021018671A1 Publication Date: 2021-01-21 Application Number: 17/041,458 Filing Date: 2019-03-26 Inventor: Mukaigaito, Kouhei   Funyu, Shigeaki   Takahashi, Hiroaki   Nakamura, Tomoyuki   Yahata, Tatsuya   Assignee: HITACHI CHEMICAL COMPANY, LTD.   IPC: F21V8/00 Abstract: A wavelength conversion member which contains a quantum dot phosphor and is capable of converting incident light into green light and red light, and which is configured such that the half-value width of the green light emission spectrum (FWHM-G) is 30 nm or less.
Total 260 pages