Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
CN112309831A
形成氧化物膜的方法、制造半导体器件的方法、形成介电膜的方法和半导体器件
Public
Publication/Patent Number: CN112309831A Publication Date: 2021-02-02 Application Number: 202010730842.8 Filing Date: 2020-07-27 Inventor: 金润洙   金海龙   柳承旻   文瑄敏   宋政奎   禹昌秀   郑圭镐   曹仑廷   Assignee: 三星电子株式会社   IPC: H01L21/02 Abstract: 公开形成氧化物膜的方法、制造半导体器件的方法、形成介电膜的方法和半导体器件,所述氧化物膜包括至少两种非氧元素。形成包括至少两种非氧元素的方法包括将第一源材料提供在基材上,所述第一源材料包括第一中心元素;提供电子给体化合物以与所述第一源材料结合;在提供所述电子给体化合物之后将第二源材料提供在所述基材上,所述第二源材料包括第二中心元素;和将氧化剂提供在所述基材上。
2
US2021028010A1
METHOD OF FORMING OXIDE FILM INCLUDING TWO NON-OXYGEN ELEMENTS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING DIELECTRIC FILM, AND SEMICONDUCTOR DEVICE
Publication/Patent Number: US2021028010A1 Publication Date: 2021-01-28 Application Number: 16/791,189 Filing Date: 2020-02-14 Inventor: Kim, Younsoo   Kim, Haeryong   Ryu, Seungmin   Moon, Sunmin   Song, Jeonggyu   Woo, Changsu   Jung, Kyooho   Cho, Younjoung   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L21/02 Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
3
US2021028004A1
Methods of Depositing SiCON with C, O, and N Compositional Control
Publication/Patent Number: US2021028004A1 Publication Date: 2021-01-28 Application Number: 17/068,188 Filing Date: 2020-10-12 Inventor: Saly, Mark   Thompson, David   Knisley, Thomas   Bhuyan, Bhaskar Jyoti   Assignee: Applied Materials, Inc.   IPC: H01L21/02 Abstract: Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
4
US10896815B2
Semiconductor substrate singulation systems and related methods
Publication/Patent Number: US10896815B2 Publication Date: 2021-01-19 Application Number: 15/986,403 Filing Date: 2018-05-22 Inventor: Seddon, Michael J.   Neyer, Thomas   Allerstam, Fredrik   Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC   IPC: H01L21/02 Abstract: Implementations of methods of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface. The method may further include inducing damage into a portion of the semiconductor substrate at a first depth into the thickness forming a first damage layer, inducing damage into a portion of the semiconductor substrate at a second depth into the thickness forming a second damage layer, and applying ultrasonic energy to the semiconductor substrate. The method may include separating the semiconductor substrate into three separate thinned portions across the thickness along the first damage layer and along the second damage layer.
5
EP3770947A1
POWER FEEDING MECHANISM, ROTATING BASE APPARATUS, AND SEMICONDUCTOR PROCESSING DEVICE
Publication/Patent Number: EP3770947A1 Publication Date: 2021-01-27 Application Number: 18910945.7 Filing Date: 2018-11-28 Inventor: Liu, Jiansheng   Li, Liang   Jiang, Xinxian   Chen, Peng   Wen, Lihui   Assignee: Beijing NAURA Microelectronics Equipment Co., Ltd.   IPC: H01L21/02 Abstract: The present disclosure provides a power feeding mechanism, a rotary base device, and semiconductor processing equipment. The power feeding mechanism is used for feeding output power of a power source into a rotating component, and includes: a conductive stationary member electrically connected with the power source; a conductive rotating member, which is electrically connected with the rotating component and synchronously rotates with the rotating component; and a conductive connecting structure, which is in electrical contact with the conductive stationary member and the conductive rotating member separately, without affecting rotation of the conductive rotating member. The power feeding mechanism provided by the present disclosure may not only improve the power transmission efficiency, but also avoid the risk of ignition in the prior art.
6
CN109599324B
一种氮化铝外延层生长方法
Grant
Publication/Patent Number: CN109599324B Publication Date: 2021-02-05 Application Number: 201811397338.X Filing Date: 2018-11-22 Inventor: 周陈   唐军   潘尧波   Assignee: 合肥彩虹蓝光科技有限公司   IPC: H01L21/02 Abstract: 本发明公开一种氮化铝外延层生长方法,包括在衬底上利用物理气相沉积法生长氮化铝薄膜,烘烤所述氮化铝薄膜,氮化所述衬底上的所述氮化铝薄膜,利用金属有机物化学气相沉积法在所述氮化铝薄膜上生长氮化铝外延层。本发明所生长氮化铝薄膜的成本低,无污染,稳定。本发明提供了一种生长稳定的、位错密度低和表面平整的高晶体质量氮化铝外延层生长方法。
7
CN112259447A
一种单晶硅传感器芯片的加工方法
Substantial Examination
Publication/Patent Number: CN112259447A Publication Date: 2021-01-22 Application Number: 202011161511.3 Filing Date: 2020-10-27 Inventor: 马群堂   Assignee: 南京欧拓自动化系统设备有限公司   IPC: H01L21/02 Abstract: 本发明公开了一种单晶硅传感器芯片的加工方法,该单晶硅传感器芯片的加工方法包括以下步骤:晶圆处理工序,取适量的研磨粒,并且勾兑一定的水分,形成研磨液,利用研磨液对晶圆进行双面研磨之后,清洗并氧化晶圆的表面,除去晶圆表面的研磨残留物,使得晶圆的表面进行钝化,降低晶圆表面的活性;取框架单元,该框架单元具有带、环状的框架以及该被加工物;根据第一参数规范和测试条件得到第一测试结果;本发明单晶硅传感器芯片的加工方法,采用湿法腐蚀对晶片表面进行处理,其是通过化学蚀刻液和被刻蚀物质之间的化学反应将被刻蚀物质剥离下来的刻蚀方法,选择性高、均匀性好、对晶片损伤少,具有优异的使用前景。
8
CN112382555A
一种磷化铟衬底的清洗方法
Public
Publication/Patent Number: CN112382555A Publication Date: 2021-02-19 Application Number: 202011264670.6 Filing Date: 2020-11-12 Inventor: 郑金龙   杨士超   周铁军   Assignee: 广东先导先进材料股份有限公司   IPC: H01L21/02 Abstract: 本发明提供一种磷化铟衬底的清洗方法,包括以下步骤:(1)将抛光后的磷化铟衬底在a℃的硫酸溶液中浸泡e秒;(2)将步骤(1)处理后的磷化铟衬底在c℃的硫酸溶液中浸泡f秒后去离子水冲洗;(3)将步骤(2)处理后的磷化铟衬底在清洗液中清洗后用去离子水冲洗,所述清洗液包括无机酸、双氧水和水;(4)将步骤(3)处理后的磷化铟衬底用氢氟酸水溶液清洗h秒后用去离子水冲洗;所述氢氟酸水溶液中氟化氢的质量浓度为g%;(5)将步骤(6)处理后的磷化铟衬底用SC1清洗液清洗后用去离子水冲洗。本发明的磷化铟衬底清洗方法显著减少了清洗后磷化铟衬底的亮点数量,降低了氧化层的厚度,提高了清洗的成品率。
9
CN109326508B
一种用于湿法处理晶圆边缘的方法
Grant
Publication/Patent Number: CN109326508B Publication Date: 2021-01-08 Application Number: 201811125196.1 Filing Date: 2018-09-26 Inventor: 姚大平   Assignee: 华进半导体封装先导技术研发中心有限公司   IPC: H01L21/02 Abstract: 本发明公开了一种用于湿法处理晶圆边缘的方法,包括:将晶圆放置在半导体装置的湿法处理腔体内;所述上部外罩向下移动并覆盖在下部外罩之上,上部密封圈和下部密封圈分别接触所述晶圆的上下两个表面,并形成密封,从而将晶圆边缘区域与中心区域隔离;向湿法处理腔体通入第一湿法处理流体;预定时间之后,切断第一湿法处理流体供应,并向湿法处理腔体通入惰性气体。
10
CN112309826A
半导体器件及制作方法及包括该器件的电子设备
Public
Publication/Patent Number: CN112309826A Publication Date: 2021-02-02 Application Number: 201910671910.5 Filing Date: 2019-07-24 Inventor: 孔真真   王桂磊   Assignee: 中国科学院微电子研究所   IPC: H01L21/02 Abstract: 本发明提出了一种半导体器件及制作方法及包括该器件的电子设备,半导体器件包括:衬底;在衬底上方形成的金属层;在金属层上方形成的合金层,其中,合金层完全覆盖金属层的表面,并且合金层的边缘超出金属层的边缘呈悬浮状;在合金层上方形成掩膜层。本发明以掩膜层为硬掩膜制备GeSn微盘。因为选用的掩膜层是透明的,所以在不去除掩膜层的情况下,可以在制备后进行测试。
11
CN112309828A
一种双槽型3D图形叠层掩模衬底结构及其制备方法和外延生长方法
Public
Publication/Patent Number: CN112309828A Publication Date: 2021-02-02 Application Number: 201910706284.9 Filing Date: 2019-08-01 Inventor: 张晓蓉   郑烨琳   冯筱   陈明兰   Assignee: 北京飓芯科技有限公司   IPC: H01L21/02 Abstract: 本发明公开了一种双槽型3D图形叠层掩模衬底结构及其制备方法和外延生长方法,属于光电子技术领域。该双槽型3D图形叠层掩模衬底结构,包括一衬底,衬底上依次设有底层掩模层、顶层掩模层,顶层掩模层通过介质层与底层掩模层连接;底层掩模层设有周期性分布的底层窗口,顶层掩模层设有周期性分布的顶层窗口;每一个顶层窗口对应两个底层窗口,该两个底层窗口对称分布在其对应的顶层窗口的两侧。本发明同时提供了该衬底结构的制备方法以及基于该结构的外延层生长方法。本发明能消除由于晶格倾转带来的相邻条形合并形成的台阶,从而生长出大面积平整的高质量侧向外延氮化镓薄膜材料,对后续在此基础上进行大量的器件外延工作有非常关键的作用。
12
CN109103070B
基于纳米图形硅衬底制备高质量厚膜AlN的方法
Grant Assignment
Publication/Patent Number: CN109103070B Publication Date: 2021-02-02 Application Number: 201810801132.2 Filing Date: 2018-07-20 Inventor: 杨学林   沈波   沈剑飞   张洁   冯玉霞   许福军   王新强   唐宁   Assignee: 北京中博芯半导体科技有限公司   IPC: H01L21/02 Abstract: 本发明公开了一种基于纳米图形硅衬底制备高质量厚膜AlN的方法,通过该方法获得的层状叠加AlN材料,从下向上依次为:纳米图形硅衬底、纳米图形AlN成核层、高温AlN横向生长层和高温AlN纵向生长层,在纳米图形硅衬底、纳米图形AlN成核层和高温AlN横向生长层中具有周期性排布的空气隙,所述空气隙在Si衬底中的深度为10nm~1μm,其横截面最大宽度为50nm~1μm,周期为100nm~2μm。与现有生长厚膜AlN的方法相比,本发明成本低廉,可被大规模产业化应用,大幅降低硅衬底上AlN的缺陷密度,提高后续器件结构材料的晶体质量,在垂直结构的UV‑LED器件、微机电系统、发光二极管、射频滤波器以及声表面波器件制造和高频宽带通信等领域有着广阔的应用前景。
13
US2021043444A1
METHOD FOR REFORMING AMORPHOUS CARBON POLYMER FILM
Publication/Patent Number: US2021043444A1 Publication Date: 2021-02-11 Application Number: 16/861,144 Filing Date: 2020-04-28 Inventor: Blanquart, Timothee Julien Vincent   Assignee: ASM IP Holding B.V.   IPC: H01L21/02 Abstract: A method for reforming an amorphous carbon film as part of a deposition process thereof, includes process of: (i) depositing an amorphous carbon film on a substrate in a reaction space until a thickness of the amorphous carbon film reaches a predetermined thickness, and then stopping the deposition process; and (ii) exposing the amorphous carbon film to an Ar and/or He plasma in an atmosphere substantially devoid of hydrogen, oxygen, and nitrogen.
14
CN112242297A
在半导体电镀室清洗基板的方法
Substantial Examination
Publication/Patent Number: CN112242297A Publication Date: 2021-01-19 Application Number: 202010683727.X Filing Date: 2020-07-15 Inventor: 山姆·李   凯尔·m·汉森   艾里克·j·伯格曼   Assignee: 应用材料公司   IPC: H01L21/02 Abstract: 清洁基板或电镀系统组件可包括在一半导体电镀室清洗一基板的方法。此方法可包括将一头部自一电镀槽移动到一第一位置。头部可包括与头部耦接的一基板。此方法可包括在一第一期间内旋转头部以将槽液甩落回到电镀槽中。一残留量的槽液可能会残留。此方法可包括自一第一液体喷嘴输送一第一液体到基板,以至少部分地排出残留量的槽液使残留量的槽液回到电镀槽中。此方法可包括将头部移动到一第二位置。此方法可包括在一第二期间内旋转头部。此方法还可包括自一第二液体喷嘴输送一第二液体穿过基板。
15
EP3761343A1
METHOD FOR MANUFACTURING A SILICON ON NITRIDE SUBSTRATE
Publication/Patent Number: EP3761343A1 Publication Date: 2021-01-06 Application Number: 19184224.4 Filing Date: 2019-07-03 Inventor: Liang, Hu   Peng, Lan   Assignee: IMEC vzw   IPC: H01L21/02 Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a silicon on nitride, SON, substrate (1). The method comprises the steps of providing a semiconductor layer (2) of a first crystal orientation, forming, on the semiconductor layer, an interface layer (3) comprising a monocrystalline III-nitride layer forming a nucleation layer for a subsequent epitaxy process, and bonding a silicon substrate (4) of a second crystal orientation with the interface layer.
16
US10923342B2
Selective modification method of a base material surface
Publication/Patent Number: US10923342B2 Publication Date: 2021-02-16 Application Number: 16/550,695 Filing Date: 2019-08-26 Inventor: Osaki, Hitoshi   Komatsu, Hiroyuki   Assignee: JSR CORPORATION   IPC: H01L21/02 Abstract: A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.
17
CN112397373A
多晶半导体层的制造方法
Publication/Patent Number: CN112397373A Publication Date: 2021-02-23 Application Number: 202010053150.4 Filing Date: 2020-01-17 Inventor: 吴政宪   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L21/02 Abstract: 一种多晶半导体层的制造方法包含形成多个间隙壁在介电层上、利用间隙壁做为蚀刻罩幕蚀刻介电层,以形成凹槽在介电层内、沉积非晶半导体层在间隙壁及介电层上,以填充凹槽,以及再结晶非晶半导体层,以形成多晶半导体层。
18
CN112289676A
一种去除半导体器件制造中的多晶硅残留的方法
Public
Publication/Patent Number: CN112289676A Publication Date: 2021-01-29 Application Number: 202010165517.1 Filing Date: 2020-03-11 Inventor: 陈定平   Assignee: 深圳方正微电子有限公司   IPC: H01L21/02 Abstract: 本发明提供了一种去除半导体器件制造中的多晶硅残留的方法,所述方法包括如下步骤:提供含有多晶硅残留的半导体半成品,对所述半导体半成品进行预刻处理得到第一半导体半成品;其中,所述预刻处理的过程采用HBr和SF的混合气体进行处理;对所述第一半导体半成品进行主刻处理得到去除多晶硅残留的半导体半成品;其中,所述主刻处理的过程采用Cl和HBr的混合气体进行处理;该方法有效地解决了多晶硅残留的问题,同时也避免了对半导体半成品多晶硅层形貌造成损伤,适合广泛应用于工业生产。
19
CN112185804A
无机分子晶体封装二维材料的结构及其封装与解封装方法
Substantial Examination
Publication/Patent Number: CN112185804A Publication Date: 2021-01-05 Application Number: 202011003478.1 Filing Date: 2020-09-22 Inventor: 翟天佑   刘立昕   刘开朗   李会巧   Assignee: 华中科技大学   IPC: H01L21/02 Abstract: 本发明属于纳米材料领域,具体涉及一种使用无机分子晶体封装二维材料的结构及其封装与解封装方法。本发明封装方法包括以下步骤:(1)将无机分子晶体升华形成气态无机分子氛围;(2)使气态无机分子在二维材料表面沉积形成保护层。本发明利用无机分子晶体材料为升华源,由于分子晶体之间较弱的作用力,在高真空环境中,较低温度下即可升华,将其沉积到二维材料表面进行封装,所得封装层与二维材料之间通过范德华力相连接,避免改变二维材料表面化学状态,可实现二维材料的无损伤封装,易于实现大规模制备和器件集成,充分利用无机分子晶体的性能,可实现不同二维材料的封装,具有普适性,具有广阔的市场前景。
20
CN112259443A
晶圆的湿法清洗方法
Substantial Examination
Publication/Patent Number: CN112259443A Publication Date: 2021-01-22 Application Number: 202011083802.5 Filing Date: 2020-10-12 Inventor: 王友长   Assignee: 上海华力集成电路制造有限公司   IPC: H01L21/02 Abstract: 本发明涉及晶圆的湿法清洗方法,涉及半导体集成电路制造技术,在进行湿法清洗时,清洗液从晶圆的边缘开始喷射并逐渐移动至晶圆的中心位置,而避免火山型缺陷集中在晶圆中心位置,并同时可减少晶圆面内的火山型缺陷,而提高半导体器件的良率,本发明仅通过改变清洗液的喷射路线即可实现,工艺简单,成本较低。
Total 500 pages