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1
CN112335049A
成像组件、触摸屏、摄像模组、智能终端、相机和距离测量方法
Public
Publication/Patent Number: CN112335049A Publication Date: 2021-02-05 Application Number: 201880095111.1 Filing Date: 2018-08-24 Inventor: 陈振宇   周凯伦   蒋伟杰   Assignee: 宁波舜宇光电信息有限公司   IPC: H01L27/14 Abstract: 本申请提供了一种成像组件,包括间隔件和光电转换器。间隔件不透光且其中形成导光通道。光电转换器与间隔件平行且间隔开,且定位为与导光通道相对应。待成像物体发出的光通过导光通道后到达光电转换器。本申请还提供了制作成像组件的方法、触摸屏、摄像模组、智能终端、多目深度相机、光场相机和距离测量的方法。
2
US10910423B2
Solid-state imaging device, manufacturing method thereof, and electronic device
Publication/Patent Number: US10910423B2 Publication Date: 2021-02-02 Application Number: 16/934,792 Filing Date: 2020-07-21 Inventor: Nakamoto, Yuka   Sayama, Yukihiro   Ohba, Nobuyuki   Nakajiki, Sintaro   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.
3
US10923554B2
Display panel and display device
Publication/Patent Number: US10923554B2 Publication Date: 2021-02-16 Application Number: 16/493,307 Filing Date: 2019-04-11 Inventor: Chen, Caiqin   Wang, Shaobo   Wang, Yiyi   Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.   IPC: H01L27/14 Abstract: A display panel includes a substrate, a first metal layer arranged on the substrate, a first insulating layer disposed on the first metal layer, a second metal layer disposed on the first insulating layer, and a pixel unit. The first metal layer includes a first metal line and a second metal line. The first metal layer is spaced apart along a first direction. The second metal line is spaced apart along a second direction. The first metal line and the second metal line are connected at an intersection. The second metal layer includes a peripheral metal line. The peripheral metal line is electrically connected to the first metal line and the second metal line. The first metal line and the second metal line are connected to the pixel unit. The first metal line and the second metal line supply the pixel unit with a signal voltage.
4
US10903261B1
Triple output, dual-band detector
Publication/Patent Number: US10903261B1 Publication Date: 2021-01-26 Application Number: 14/214,139 Filing Date: 2014-03-14 Inventor: Yap, Daniel   Rajavel, Rajesh D.   Assignee: HRL Laboratories, LLC   IPC: H01L27/14 Abstract: An infrared photo-detector and a method for manufacturing it are disclosed. The infrared photo-detector contains a collector region, a first absorber layer absorbing a first wavelength band of incident light, wherein the first absorber layer is disposed between the collector region and the incident light, a second absorber layer absorbing a second wavelength band of light, wherein the first absorber layer is disposed between the second absorber layer and the incident light, at least one first electrical contact coupled with the first absorber layer, at least one second electrical contact coupled with the second absorber layer and at least one third electrical contact coupled with the collector, wherein the at least one third electrical contact provides a current associated with absorbed light of the first wavelength band and absorbed light of the second wavelength band. The method disclosed teaches how to manufacture the infrared photo-detector.
5
US10916570B2
Array substrate and manufacturing method thereof
Publication/Patent Number: US10916570B2 Publication Date: 2021-02-09 Application Number: 16/312,814 Filing Date: 2018-09-03 Inventor: Chien, Ching Fu   Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.   IPC: H01L27/14 Abstract: Provided are an array substrate and a manufacturing method thereof. A first wire of a fanout line of the array substrate is divided into a plurality of first sections. A second wire of the fanout line is divided into a plurality of second sections corresponding to the first sections. Each of the first sections is electrically connected to the second section corresponding thereof. Thus, as a certain position of the first wire or the second wire is broken, only a resistance of the first section or the second section where the broken position is located is changed, so that a blocking effect on the entire fanout lines is not large, thereby reducing or avoiding appearance of a light line.
6
CN105580136B
半导体装置和固体摄像器件
Grant
Publication/Patent Number: CN105580136B Publication Date: 2021-02-19 Application Number: 201480053552.7 Filing Date: 2014-09-19 Inventor: 香川恵永   藤井宣年   深沢正永   金口时久   萩本贤哉   青柳健一   三桥生枝   Assignee: 索尼公司   IPC: H01L27/00 Abstract: 本技术涉及能够以更简单的方式来提高抗裂性的半导体装置和固体摄像器件。所述半导体装置具有:上侧基板,其包括Si基板和层叠于该Si基板上的布线层;以及下侧基板,其包括Si基板和层叠于该Si基板上的布线层,所述下侧基板被接合至所述上侧基板。此外,在所述上侧基板中形成有引线接合用或探测用焊盘,而且,在位于所述引线接合用或探测用焊盘与所述下侧基板的所述Si基板之间的各个所述布线层中以呈放射状层叠的方式设置有用于保护所述引线接合用或探测用焊盘的拐角部分或侧边部分的焊盘。本技术能够被应用于固体摄像器件。
7
US10886411B2
Semiconductor device and display unit
Publication/Patent Number: US10886411B2 Publication Date: 2021-01-05 Application Number: 16/174,284 Filing Date: 2018-10-30 Inventor: Terai, Yasuhiro   Assignee: JOLED INC.   IPC: H01L27/14 Abstract: A semiconductor device includes a substrate, a transistor, a storage capacitor, a first insulating layer, and a second insulating layer. The transistor includes a semiconductor film, a gate insulating film, a first gate electrode, and a second gate electrode. The semiconductor film, the gate insulating film, and the first gate electrode are provided in this order from the substrate. The second gate electrode faces the first gate electrode across the semiconductor film. The storage capacitor includes a lower electrode and an upper electrode that are provided in this order from the substrate. The upper electrode faces the lower electrode and includes the same material as the semiconductor film. The first insulating layer is provided between the second gate electrode and the semiconductor film. The second insulating layer is provided between the lower electrode and the upper electrode and has a smaller thickness than the first insulating layer.
8
US2021002129A1
MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
Publication/Patent Number: US2021002129A1 Publication Date: 2021-01-07 Application Number: 17/026,192 Filing Date: 2020-09-19 Inventor: Gogoi, Bishnu Prasanna   Assignee: Versana Micro Inc.   IPC: B81B7/02 Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.
9
EP3573103B1
PHOTOELECTRIC CONVERSION APPARATUS
Publication/Patent Number: EP3573103B1 Publication Date: 2021-01-06 Application Number: 17894717.2 Filing Date: 2017-02-03 Inventor: Hu, Jing   Wang, Heng   Gong, Jianmin   Wu, Xuming   Chen, Jian   Li, Shengping   Assignee: Huawei Technologies Co., Ltd.   IPC: H01L27/14
10
CN108291989B
近红外线吸收性组合物、膜、红外线截止滤波器、固体摄像元件、红外线吸收剂及化合物
Grant
Publication/Patent Number: CN108291989B Publication Date: 2021-01-15 Application Number: 201680067876.5 Filing Date: 2016-11-02 Inventor: 平井友树   佐佐木大辅   神保良弘   Assignee: 富士胶片株式会社   IPC: G02B5/22 Abstract: 本发明提供一种能够制造红外遮蔽性及可见透明性优异的膜的近红外线吸收性组合物、膜、红外线截止滤波器、固体摄像元件、红外线吸收剂及化合物。近红外线吸收性组合物含有由下述式(1)表示且极大吸收波长为700nm以上的方酸内鎓盐化合物和树脂。式中,Ar及Ar分别独立地表示具有包含硫属原子的杂芳环的二价共轭基团,R~R分别独立地表示氢原子或取代基。膜及红外线截止滤波器由近红外线吸收性组合物组成。固体摄像元件具有红外线截止滤波器。
11
US10910508B1
Method of fabricating photosensitive devices with reduced process-temperature budget
Publication/Patent Number: US10910508B1 Publication Date: 2021-02-02 Application Number: 16/401,821 Filing Date: 2019-05-02 Inventor: Kay, Randolph R.   Mani, Seethambal S.   Pomerene, Andrew   Starbuck, Andrew Lea   Brock, Reinhard   Trotter, Douglas Chandler   Jones, Adam   Assignee: National Technology & Engineering Solutions of Sandia, LLC   IPC: H01L27/14 Abstract: A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.
12
US10886316B2
Linear image sensor and method for manufacturing same
Publication/Patent Number: US10886316B2 Publication Date: 2021-01-05 Application Number: 16/322,558 Filing Date: 2017-07-25 Inventor: Muramatsu, Norihiro   Nozawa, Katsunori   Assignee: HAMAMATSU PHOTONICS K.K.   IPC: H01L27/14 Abstract: A linear image sensor includes first and second sensor chips, first and second substrates, a common support substrate, a support portion, a dam portion, and a sealing portion. The first sensor chip is mounted to partially protrude on one end side of the first substrate. The second sensor chip is mounted to partially protrude on one end side of the second substrate. The first and second substrates are mounted on the common support substrate. The support portion is provided in a gap between the end faces of the first and second substrates. The dam portion is provided annularly to surround the sensor chips. The sealing portion seals the sensor chips, in a region surrounded by the dam portion.
13
US10923511B2
Array substrate and display device comprising same
Publication/Patent Number: US10923511B2 Publication Date: 2021-02-16 Application Number: 16/467,064 Filing Date: 2019-01-23 Inventor: Hu, Junyan   Assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.   IPC: H01L27/14 Abstract: An array substrate and a display device having thereof, the array substrate having a display region and a bending region surrounding the display region, wherein the array substrate includes a first substrate layer, a first buffer layer, a second substrate layer, at least one opening, and at least one metal trace extending over the display region and the bending region, wherein at least a part of the at least one metal trace covers a surface inside the at least one opening; an organic layer disposed in the at least one opening and encasing the at least one metal trace located inside the at least one opening.
14
US10910504B2
Solid-state imaging element, imaging device, and method for manufacturing solid-state imaging element
Publication/Patent Number: US10910504B2 Publication Date: 2021-02-02 Application Number: 15/777,853 Filing Date: 2016-09-28 Inventor: Yokogawa, Sozo   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L31/0236 Abstract: [Object] To propose a solid-state imaging element, an imaging device, and a method for manufacturing a solid-state imaging element that are capable of providing a pixel with polarization sensitivity while suppressing the reduction in sensitivity to non-polarized incident light. [Solution] A solid-state imaging element according to the present disclosure includes: a light receiving element included in a plurality of pixels; and a groove section provided on surfaces of at least some of the pixels in the light receiving element and extended along a prescribed direction. Two or more directions including at least mutually orthogonal two directions exist as a direction in which the groove section is extended.
15
US10910289B2
Electronic substrate and electronic apparatus
Publication/Patent Number: US10910289B2 Publication Date: 2021-02-02 Application Number: 16/330,963 Filing Date: 2017-10-20 Inventor: Maehara, Masataka   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L23/31 Abstract: The present technology relates to an electronic substrate that achieves a reduction in the size of a substrate and enables a void risk in an underfill to be reduced, and an electronic apparatus. An electronic substrate in one aspect of the present technology includes: an electronic chip that is placed above a substrate; an electrode that exists between the substrate and the electronic chip and electrically connects the substrate and the electronic chip; an underfill with which a space between the substrate and the electronic chip is filled so that the electrode is sealed and protected; a protection target to be protected from inflow of the underfill, the protection target being formed on the substrate; and an underfill inflow prevention unit that is formed in the substrate so as to surround an entirety or a portion of the protection target. The present technology is applicable to, for example, a solid-state image sensor.
16
US10896899B2
Display panel, method for manufacturing the same, and display device
Publication/Patent Number: US10896899B2 Publication Date: 2021-01-19 Application Number: 16/503,487 Filing Date: 2019-07-04 Inventor: Chi, Xiao   Wu, Tianyi   Fu, Jujian   Xing, Liang   Liu, Gang   Yu, Shaorong   Assignee: Shanghai Tianma Micro-Electronics Co., Ltd.   IPC: H01L27/14 Abstract: A display panel, a method for manufacturing the display panel, and a display device including the display panel are provided. The display panel includes: a thin film transistor array layer, and a light-emitting function layer at a side of the thin film transistor array layer. The thin film transistor array layer includes a planarization layer, an electrode layer, a first insulation layer, an active layer and a buffer layer. The electrode layer includes at least one first electrode and second electrode, and each first electrode includes a connection portion and an electrode portion which are connected to each other. The light-emitting function layer includes first contact electrodes and light-emitting elements. Heat generated by the light-emitting function layer is conducted to electrode portion of the first electrode through the connection portion of the first electrode and is uniformly distributed on the connection portion and the electrode portion.
17
US2021043611A1
AUGMENTED REALITY DISPLAY SYSTEMS WITH SUPER-LAMBERTIAN LED SOURCE
Publication/Patent Number: US2021043611A1 Publication Date: 2021-02-11 Application Number: 17/076,689 Filing Date: 2020-10-21 Inventor: Ahmed, Khaled   Parikh, Kunjal   Assignee: Intel Corporation   IPC: H01L25/075 Abstract: Emissive display devices having LED sources with super-lambertian radiation patterns. An exemplary emission source may have a half-emission-cone-angle of less than 40°. A system, such as an augmented reality display system, employing such an emissive display device may display a reduction in power of up to three times relative to LED sources with a lambertian radiation pattern. In some systems, such as augmented reality display systems, the optical path down stream of such an emissive display device may be simplified and/or dimensionally scaled, and/or manufactured to lower tolerances. For example, a discrete collimating lens may be eliminated from the optical path of such an emissive display device.
18
CN112352419A
用于红外相机中的寄生热补偿的设备和方法
Public
Publication/Patent Number: CN112352419A Publication Date: 2021-02-09 Application Number: 201980039019.8 Filing Date: 2019-06-07 Inventor: 阿兰·迪朗   尼古拉斯·布杜   Assignee: 灵锐得公司   IPC: H04N5/33 Abstract: 本发明涉及一种红外相机,该红外相机包括包含像素阵列(102)的外壳(404),其中像素阵列包括:形成图像传感器(103)的图像像素(104),其被布置成接收来自图像场景的红外光;以及多个寄生热感测像素(105),该多个寄生热感测像素被布置成从所述外壳(404)的内表面的不同部分接收红外光。
19
US10892757B1
Reverse body biasing of a transistor using a photovoltaic source
Publication/Patent Number: US10892757B1 Publication Date: 2021-01-12 Application Number: 16/693,672 Filing Date: 2019-11-25 Inventor: Kaklin, Filip   Assignee: STMicroelectronics (Research & Development) Limited   IPC: H03K19/00 Abstract: A metal oxide semiconductor (MOS) transistor has a source terminal, a drain terminal, a gate terminal and a body terminal. The source terminal is connected to receive a supply voltage and the body terminal is connected to receive a reverse body bias voltage. A photovoltaic circuit has a first terminal connected to the source terminal of the MOS transistor and a second terminal connected to the body terminal of the MOS transistor. The photovoltaic circuit converts received photons from the environment to generate the reverse body bias voltage.
20
US10903278B2
Solid-state imaging element and solid-state imaging apparatus having a photoelectric conversion layer and a pair of electrodes
Publication/Patent Number: US10903278B2 Publication Date: 2021-01-26 Application Number: 16/333,796 Filing Date: 2017-08-24 Inventor: Kataoka, Toyotaka   Hatano, Keisuke   Ito, Kyosuke   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/30 Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.
Total 500 pages