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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1 EP2747139B1
SEMICONDUCTOR IMAGE PICKUP DEVICE, METHOD FOR MAKING SEMICONDUCTOR IMAGE PICKUP DEVICE, AND ELECTRONIC DEVICE
Publication/Patent Number: EP2747139B1 Publication Date: 2020-01-08 Application Number: 12838953.3 Filing Date: 2012-09-27 Inventor: Akiyama, Kentaro   Assignee: Sony Corporation   IPC: H01L27/146
2 EP3540776A3
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3540776A3 Publication Date: 2020-01-08 Application Number: 19173175.1 Filing Date: 2014-12-12 Inventor: Komai, Naoki   Sasaki, Naoto   Ogawa, Naoki   Oinoue, Takashi   Iwamoto, Hayato   Ooka, Yutaka   Nagata, Masaya   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A semiconductor device (1) includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit (23) processing a pixel signal output from the pixel portion is formed, the first and second semiconductor substrates being laminated. A protective substrate (18) protecting an on-chip lens (16) is disposed on the on-chip lens in the pixel region of the first semiconductor substrate with a sealing resin (17) interposed therebetween. A semiconductor device (1) includes a first semiconductor substrate (12) in which a pixel region (21) where pixel portions performing photoelectric conversion are two-dimensionally arranged is formed and a second semiconductor substrate (11) in which a logic circuit (23) ...More Less
3 EP3586366A1
SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3586366A1 Publication Date: 2020-01-01 Application Number: 18707443.0 Filing Date: 2018-02-08 Inventor: Yamashita, Kazuyoshi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146
4 EP3570327A3
DETECTOR UNIT FOR DETECTOR ARRAY OF RADIATION IMAGING MODALITY
Publication/Patent Number: EP3570327A3 Publication Date: 2020-02-19 Application Number: 19174596.7 Filing Date: 2013-07-26 Inventor: Luhta, Randy   Abenaim, Daniel   Choquette, Martin   Deych, Ruvin   Vrettos, Chris   Assignee: Analogic Corporation   IPC: H01L27/146 Abstract: Among other things, a detector unit for a detector array of a radiation imaging modality is provided. In some embodiments, the detector unit comprises a radiation detection sub-assembly and an electronics sub-assembly. In some embodiments, at least some portions of the detector unit, such as the electronics sub-assembly, may be formed via a semiconductor fabrication technique. By way of example, an electronics sub-assembly may be formed via a semiconductor fabrication technique and may comprise electronic circuitry which is embedded in a molding compound. In some embodiments, such electronic circuitry may be electrically coupled together via electrically conductive traces and/or vias. Among other things, a detector unit for a detector array of a radiation imaging modality is provided. In some embodiments, the detector unit comprises a radiation detection sub-assembly and an electronics sub-assembly. In some embodiments, at least some portions of the detector ...More Less
5 EP3618430A1
SOLID-STATE IMAGE CAPTURING DEVICE AND ELECTRONIC INSTRUMENT
Publication/Patent Number: EP3618430A1 Publication Date: 2020-03-04 Application Number: 18790913.0 Filing Date: 2018-04-11 Inventor: Miyakoshi, Daisuke   Assignee: Sony Corporation   IPC: H04N9/07 Abstract: The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor. The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order ...More Less
6 EP3333893B1
SOLID-STATE IMAGING DEVICE
Publication/Patent Number: EP3333893B1 Publication Date: 2020-02-19 Application Number: 16832503.3 Filing Date: 2016-07-28 Inventor: Suzuki, Sei   Yamada, Tohru   Shimizu, Yasuyuki   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: G01S17/02
7 EP3614434A1
SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: EP3614434A1 Publication Date: 2020-02-26 Application Number: 18787243.7 Filing Date: 2018-04-16 Inventor: Saito, Suguru   Fujii, Nobutoshi   Matsumoto, Ryosuke   Zaizen, Yoshifumi   Manda, Shuji   Maruyama, Shunsuke   Shimizu, Hideo   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate. A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are ...More Less
8 EP3633332A1
INFRARED IMAGING ELEMENT, INFRARED IMAGING ARRAY, AND METHOD FOR MANUFACTURING INFRARED IMAGING ELEMENT
Publication/Patent Number: EP3633332A1 Publication Date: 2020-04-08 Application Number: 18806337.4 Filing Date: 2018-01-29 Inventor: Maegawa, Tomohiro   Assignee: Mitsubishi Electric Corporation   IPC: G01J1/02 Abstract: This infrared imaging element includes: a substrate (31) which has a front surface and a back surface and to which a circuit unit (32) is provided; a support leg wiring line (4) that is disposed above the front surface of the substrate (31); and an infrared-ray detection unit (13) which is held on the support leg wiring line (4) and to which a diode (2) electrically connected to the circuit unit (32) via the support leg wiring line (4) is provided, wherein a temperature change of the infrared-ray detection unit (13) is detected as an electrical signal change of the diode (2) by the circuit unit (32). The substrate (31), the support leg wiring line (4), and the infrared-ray detection unit (13) are laminated at intervals in a direction perpendicular to the front surface of the substrate (31). This infrared imaging element includes: a substrate (31) which has a front surface and a back surface and to which a circuit unit (32) is provided; a support leg wiring line (4) that is disposed above the front surface of the substrate (31); and an infrared-ray detection unit ...More Less
9 EP3631857A1
IMAGING DEVICE AND ELECTRONIC DEVICE
Publication/Patent Number: EP3631857A1 Publication Date: 2020-04-08 Application Number: 18726241.5 Filing Date: 2018-05-02 Inventor: Yamagishi, Hajime   Hida, Shota   Kobayashi, Yuusaku   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146
10 EP3633727A1
IMAGING ARRAY HAVING IMPROVED SURFACE-TO-DETECTOR LIGHT TRANSMISSION
Publication/Patent Number: EP3633727A1 Publication Date: 2020-04-08 Application Number: 19198645.4 Filing Date: 2019-09-20 Inventor: Ramaswami, Shrinath   Assignee: Foveon, Inc.   IPC: H01L27/146 Abstract: A pixel sensor array includes a plurality of surface pixel sensors disposed in a substrate, a layer of dielectric material formed over the surface of the pixel sensors, a plurality of apertures formed in the dielectric layer each aligned with one of the surface pixel sensors and having an inner side wall. A lining layer is formed on the inner side wall of each aperture and is substantially fully reflective to visible light. The lining layer is spaced apart from the surface of the substrate and has a smaller cross-sectional area than a cross-sectional area of each surface pixel sensor. A filler material substantially transparent to visible light is disposed inside of the reflective lining layer and has a top surface lying in the plane with the top surface of the layer of dielectric material. A microlens is disposed over the top surface of each aperture. A pixel sensor array includes a plurality of surface pixel sensors disposed in a substrate, a layer of dielectric material formed over the surface of the pixel sensors, a plurality of apertures formed in the dielectric layer each aligned with one of the surface pixel sensors and ...More Less
11 EP3410488B1
SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
Publication/Patent Number: EP3410488B1 Publication Date: 2020-03-11 Application Number: 18177447.2 Filing Date: 2012-09-27 Inventor: Wakano, Toshifumi   Assignee: Sony Corporation   IPC: H01L27/146
12 EP3607585A1
DEVICE AND METHOD FOR MULTISPECTRAL IMAGING IN THE INFRARED
Publication/Patent Number: EP3607585A1 Publication Date: 2020-02-12 Application Number: 18716250.8 Filing Date: 2018-04-06 Inventor: Bierret, Antoine   Vincent, Grégory   Haidar, Riad   Pardo, Fabrice   Pelouard, Jean-luc   Assignee: Office National d'Etudes et de Recherches Aérospatiales   Centre National de la Recherche Scientifique CNRS   IPC: H01L27/146
13 EP3608962A1
MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION
Publication/Patent Number: EP3608962A1 Publication Date: 2020-02-12 Application Number: 19189836.0 Filing Date: 2019-08-02 Inventor: Zhang, Wei   Evans, Michael J.   Malchow, Douglas Stewart   Bereznycky, Paul L.   Paik, Namwoong   Assignee: Sensors Unlimited, Inc.   IPC: H01L27/146 Abstract: A method of forming an array of photodiodes includes forming a cap layer (102) on a surface (104) of an absorption layer (106). The method includes forming a plurality of spaced apart pixel diffusion areas (116) in the cap layer (102). The method includes forming a mesa trench (124) with opposed sidewalls (126) through the cap layer (102), wherein the mesa trench (124) surrounds each of the pixel diffusion areas (116) separating the pixel diffusion areas (116) from one another. The method includes forming a sidewall passivation layer (128) over the sidewalls (126) of the mesa trench (124) and removing a portion of the sidewall passivation layer (128) to expose a respective contact (118) electrically connected to each of the pixel diffusion areas (116), but leaving the sidewalls (126) of the mesa trench covered with the sidewall passivation layer (128) wherein the contact (118) is open and uncovered for electrical connection. A method of forming an array of photodiodes includes forming a cap layer (102) on a surface (104) of an absorption layer (106). The method includes forming a plurality of spaced apart pixel diffusion areas (116) in the cap layer (102). The method includes forming a mesa trench ...More Less
14 EP3332548B1
METHOD FOR CONTROLLING AN ACTIVE PIXEL IMAGE SENSOR
Publication/Patent Number: EP3332548B1 Publication Date: 2020-04-15 Application Number: 16745728.2 Filing Date: 2016-07-29 Inventor: Mayer, Frédéric   Barbier, Frédéric   Gesset, Stéphane   Assignee: Teledyne e2v Semiconductors SAS   IPC: H04N5/355
15 EP3598500A1
RADIATION IMAGING SYSTEM
Publication/Patent Number: EP3598500A1 Publication Date: 2020-01-22 Application Number: 19186414.9 Filing Date: 2019-07-16 Inventor: Lee, Denny Lap Yen   Assignee: Vieworks Co., Ltd.   IPC: H01L27/146 Abstract: A radiation imaging system includes a radiation-emitting device and a radiation imaging device. The radiation imaging device has an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, an array of pixel units electrically coupled to the electrical insulation layer, and an array of transistors connected to the array of pixel units. A radiation imaging system includes a radiation-emitting device and a radiation imaging device. The radiation imaging device has an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, an ...More Less
16 EP3598739A1
IMAGE SENSING CIRCUIT AND CONTROL METHOD THEREOF
Publication/Patent Number: EP3598739A1 Publication Date: 2020-01-22 Application Number: 18913998.3 Filing Date: 2018-04-13 Inventor: Tseng, Chien-jian   Assignee: Shenzhen Goodix Technology Co., Ltd.   IPC: H04N5/357 Abstract: An image sensor circuit is provided. The image sensor circuit includes a pixel array and a processing circuit. The pixel array includes a pixel. The pixel includes a photoelectric conversion unit, a first processing unit and a second processing unit. The photoelectric conversion unit is configured to convert a light signal into an electrical signal. The first processing unit, coupled to the photoelectric conversion unit, is configured to receive the electrical signal and generate a pixel output. The second processing unit is configured to receive a reference signal and generate a reference output. The reference output carries noise interference information. The processing circuit, coupled to the pixel, is configured to generate a sensor output according to the pixel output and the reference output. A control method of an image sensor circuit is also provided. An image sensor circuit is provided. The image sensor circuit includes a pixel array and a processing circuit. The pixel array includes a pixel. The pixel includes a photoelectric conversion unit, a first processing unit and a second processing unit. The photoelectric conversion ...More Less
17 EP3324612B1
REDUCED NOISE CMOS IMAGE SENSOR
Publication/Patent Number: EP3324612B1 Publication Date: 2020-01-29 Application Number: 17200203.2 Filing Date: 2017-11-06 Inventor: Peizerat, Arnaud   Assignee: Commissariat à l'Energie Atomique et aux Energies Alternatives   IPC: H04N5/363
18 EP3605044A1
DETECTOR, METHODS FOR OPERATING A DETECTOR AND DETECTOR PIXEL CIRCUIT
Publication/Patent Number: EP3605044A1 Publication Date: 2020-02-05 Application Number: 18187018.9 Filing Date: 2018-08-02 Inventor: Goran, Daniel Radu   Bombelli, Luca   Trigilio, Paolo   Assignee: Bruker Nano GmbH   IPC: G01J1/46 Abstract: The present invention relates to a pixelated sensor (100) comprising a semiconductor substrate chip (10) with a plurality of sensor pixels (11) and a detector chip (20) with a plurality of detector pixels (21). Therein, each of the plurality of sensor pixels (11) is configured as a photodiode and is electrically connected to an input node (22) of one of the detector pixels (21). Each of the detector pixels (21) is configured to receive a sensor input from the connected sensor pixel (11), to convert the sensor input into a detector output and to output the detector output to an analog to digital converter (40). According to the invention, the detector chip (20) further comprises a plurality of macropixels (30), wherein each macropixel (30) is formed by a subset of detector pixels (21) that are interconnected by at least one conducting grid (50), wherein each detector pixel (21) of the subset is configured to be switchable connected to the at least one conducting grid (50). The invention further relates to a detector pixel circuit (70) for a detector chip (20) of a pixelated detector (100) of the invention and to methods for operating a pixelated detector (100) according to the invention. The present invention relates to a pixelated sensor (100) comprising a semiconductor substrate chip (10) with a plurality of sensor pixels (11) and a detector chip (20) with a plurality of detector pixels (21). Therein, each of the plurality of sensor pixels (11) is configured ...More Less
19 EP3605608A1
IMAGE PICKUP ELEMENT AND IMAGE PICKUP DEVICE
Publication/Patent Number: EP3605608A1 Publication Date: 2020-02-05 Application Number: 18774985.8 Filing Date: 2018-03-28 Inventor: Kato, Shutaro   Takagi, Toru   Seo, Takashi   Ando, Ryoji   Assignee: Nikon Corporation   IPC: H01L27/146 Abstract: An image sensor includes: a micro lens; a photoelectric conversion unit that photoelectrically converts light passing through the micro lens and generates electric charge; and a reflecting portion that reflects a portion of light passing through the photoelectric conversion unit in a direction parallel to an optical axis of the micro lens and passing through the photoelectric conversion unit, and in a direction toward the photoelectric conversion unit. An image sensor includes: a micro lens; a photoelectric conversion unit that photoelectrically converts light passing through the micro lens and generates electric charge; and a reflecting portion that reflects a portion of light passing through the photoelectric conversion unit ...More Less
20 EP3595009A1
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
Publication/Patent Number: EP3595009A1 Publication Date: 2020-01-15 Application Number: 19192125.3 Filing Date: 2010-03-12 Inventor: Umebayashi, Taku   Takahashi, Hiroshi   Shohji, Reijiroh   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips. In said back-illuminated solid-state imaging device a first multi-wiring layer is formed at a side opposite to the light-incident side of the first semiconductor substrate, said first multi-wiring layer is electrically connected to the pixel section, a second multi-wiring layer is formed at a first side of the second semiconductor substrate. The side opposite to the light-incident side of the first semiconductor substrate and the first side of the second semiconductor substrate face each other. A wiring in the first multi-wiring layer is directly connected to a wiring in the second multi-wiring layer, such that the pixel section and a control circuit are electrically connected to the logic circuit. A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished ...More Less