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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1 US2020279880A1
FLIP-CHIP SAMPLE IMAGING DEVICES WITH SELF-ALIGNING LID
Publication/Patent Number: US2020279880A1 Publication Date: 2020-09-03 Application Number: 16/290,832 Filing Date: 2019-03-01 Inventor: Zhang, Ming   Qian, Yin   Miao, Chia-chun   Tai, Dyson H.   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.
2 US2020279883A1
SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE
Publication/Patent Number: US2020279883A1 Publication Date: 2020-09-03 Application Number: 16/874,442 Filing Date: 2020-05-14 Inventor: Miyazawa, Shinji   Ooka, Yutaka   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.
3 US10770497B2
Color filter array, imagers and systems having same, and methods of fabrication and use thereof
Publication/Patent Number: US10770497B2 Publication Date: 2020-09-08 Application Number: 16/508,188 Filing Date: 2019-07-10 Inventor: Ford, Loriston   Boettiger, Ulrich C.   Assignee: Micron Technology, Inc.   IPC: H01L27/146 Abstract: A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.
4 EP3528288B1
GATE-CONTROLLED CHARGE MODULATED DEVICE FOR CMOS IMAGE SENSORS
Publication/Patent Number: EP3528288B1 Publication Date: 2020-08-26 Application Number: 18214935.1 Filing Date: 2014-06-20 Inventor: Lee, Jae Hyung   Na, Yeul   Kim, Youngsik   Jung, Woo-shik   Assignee: Stratio, Inc.   IPC: H01L27/146
5 EP3471146B1
METHOD FOR MANUFACTURING AN OPTICAL SENSOR AND OPTICAL SENSOR
Publication/Patent Number: EP3471146B1 Publication Date: 2020-09-09 Application Number: 17196609.6 Filing Date: 2017-10-16 Inventor: Toschkoff, Gregor   Bodner, Thomas   Schrank, Franz   Labodi, Miklos   Siegert, Jörg   Schrems, Martin   Assignee: ams AG   IPC: H01L27/146
6 US10644048B2
Anti-reflective coating with high refractive index material at air interface
Publication/Patent Number: US10644048B2 Publication Date: 2020-05-05 Application Number: 15/421,879 Filing Date: 2017-02-01 Inventor: Fan, Chun-sheng   Tsai, Chen-wei   Lin, Wei-feng   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride.
7 US10600834B2
Image sensor capable of improving color shading effect
Publication/Patent Number: US10600834B2 Publication Date: 2020-03-24 Application Number: 15/800,388 Filing Date: 2017-11-01 Inventor: Kim, Sang-sik   Assignee: SK hynix Inc.   IPC: H01L27/146 Abstract: An image sensor includes: a pixel array where a plurality of pixel groups are arrayed in two dimensions, wherein each of the plurality of the pixel groups includes: a first pixel suitable for sensing a first color signal that is color-separated through a first color filter; and a second pixel suitable for sensing a second color signal that is color-separated through a second color filter and has a longer wavelength than the first color signal, and a volume of a first color filter or a second color filter that is positioned in a peripheral area of the pixel array is different from a volume of a first color filter or a second color filter that is positioned in a central area of the pixel array.
8 US10566364B2
Resonant-filter image sensor and associated fabrication method
Publication/Patent Number: US10566364B2 Publication Date: 2020-02-18 Application Number: 16/276,561 Filing Date: 2019-02-14 Inventor: Zheng, Yuanwei   Chen, Gang   Mao, Duli   Tai, Dyson H.   Liu, Lequn   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.
9 US10566374B2
Via support structure under pad areas for BSI bondability improvement
Publication/Patent Number: US10566374B2 Publication Date: 2020-02-18 Application Number: 16/167,844 Filing Date: 2018-10-23 Inventor: Huang, Sin-yao   Wang, Ching-chun   Yaung, Dun-nian   Hung, Feng-chi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a substrate and a first interconnect wire arranged within a dielectric structure on the substrate. A bond pad contacts the first interconnect wire. A via support structure has one or more vias arranged within the dielectric structure at a location separated from the substrate by the first interconnect wire, The via support structure has a metal pattern density that is greater than or equal to approximately 19% and that is configured to mitigate damage caused by a force of a bonding process on the bond pad.
10 US10566365B2
Image sensor
Publication/Patent Number: US10566365B2 Publication Date: 2020-02-18 Application Number: 14/722,730 Filing Date: 2015-05-27 Inventor: Chen, Li-wei   Lin, Chi-han   Tu, Zong-ru   Assignee: VISERA TECHNOLOGIES COMPANY LIMITED   IPC: H01L27/146 Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.
11 US10672817B2
Image sensors with light channeling reflective layers therein
Publication/Patent Number: US10672817B2 Publication Date: 2020-06-02 Application Number: 16/189,008 Filing Date: 2018-11-13 Inventor: Lee, Kyungho   An, Hyuk   Choi, Hyuk Soon   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.
12 US2020185449A1
SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020185449A1 Publication Date: 2020-06-11 Application Number: 16/789,812 Filing Date: 2020-02-13 Inventor: Takahashi, Hiroshi   Assignee: SONY CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic device capable of increasing utilization efficiency of a substrate. The solid-state imaging device includes a first semiconductor substrate provided with a sensor circuit having a photoelectric conversion part, and a second semiconductor substrate and a third semiconductor substrate provided with respective circuits different from the sensor circuit. The first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are stacked on each other in three layers, and a metal element for an electrode constituting an electrode for external connection is disposed in the first semiconductor substrate. An electrode for a measuring terminal is disposed within the second semiconductor substrate or the third semiconductor substrate, and the first semiconductor substrate is stacked after performing a predetermined measurement. The present technology can be applied to a backside-illuminated solid-state imaging device, for example.
13 US2020185443A1
SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Publication/Patent Number: US2020185443A1 Publication Date: 2020-06-11 Application Number: 16/336,009 Filing Date: 2017-09-28 Inventor: Itabasi, Kouichi   Nishimura, Yuuji   Ishikawa, Mitsuru   Seki, Yuichi   Shimoji, Masaya   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01L27/146 Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
14 US2020058694A1
IMAGING DEVICE AND IMAGE SENSOR
Publication/Patent Number: US2020058694A1 Publication Date: 2020-02-20 Application Number: 16/476,437 Filing Date: 2018-03-27 Inventor: Nakanishi, Sota   Assignee: NIKON CORPORATION   IPC: H01L27/146 Abstract: An imaging device, includes: an imaging unit in which are disposed a plurality of pixels, each including a filter that is capable of changing a wavelength of light passing therethrough to a first wavelength and to a second wavelength and a light reception unit that receives light that has passed through the filter, and that captures an image via an optical system; an analysis unit that analyzes the image captured by the imaging unit; and a control unit that controls the wavelength of the light to be transmitted, by the filter based upon a result of analysis by the analysis unit.
15 US2020083263A1
PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Publication/Patent Number: US2020083263A1 Publication Date: 2020-03-12 Application Number: 16/556,964 Filing Date: 2019-08-30 Inventor: Tanaka, Yoshiei   Hirota, Katsunori   Onuki, Yusuke   Tange, Tsutomu   Ogino, Takumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd<Hb”.
16 US2020052012A1
MESA TRENCH ETCH WITH STACKED SIDEWALL PASSIVATION
Publication/Patent Number: US2020052012A1 Publication Date: 2020-02-13 Application Number: 16/057,191 Filing Date: 2018-08-07 Inventor: Zhang, Wei   Evans, Michael J.   Malchow, Douglas Stewart   Bereznycky, Paul L.   Paik, Namwoong   Assignee: Sensors Unlimited, Inc.   IPC: H01L27/146 Abstract: A method of forming an array of photodiodes includes forming a cap layer on a surface of an absorption layer. The method includes forming a plurality of spaced apart pixel diffusion areas in the cap layer. The method includes forming a mesa trench with opposed sidewalls through the cap layer, wherein the mesa trench surrounds each of the pixel diffusion areas separating the pixel diffusion areas from one another. The method includes forming a sidewall passivation layer over the sidewalls of the mesa trench and removing a portion of the sidewall passivation layer to expose a respective contact electrically connected to each of the pixel diffusion areas, but leaving the sidewalls of the mesa trench covered with the sidewall passivation layer wherein the contact is open and uncovered for electrical connection.
17 US2020066777A1
INCREASED OPTICAL PATH FOR LONG WAVELENGTH LIGHT BY GRATING STRUCTURE
Publication/Patent Number: US2020066777A1 Publication Date: 2020-02-27 Application Number: 16/672,814 Filing Date: 2019-11-04 Inventor: Cheng, Yun-wei   Chou, Chun-hao   Lee, Kuo-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
18 US2020013824A1
MANUFACTURING METHOD OF IMAGE SENSING DEVICE
Publication/Patent Number: US2020013824A1 Publication Date: 2020-01-09 Application Number: 16/571,178 Filing Date: 2019-09-15 Inventor: Sun, Peng   Wang, Xilong   Hu, Sheng   Assignee: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: A manufacturing method of an image sensing device includes the following steps. A substrate is provided. At least one image sensing unit is disposed in the substrate. A passivation layer is formed on the substrate. An auxiliary layer is formed on the passivation layer. A material composition of the auxiliary layer is different from a material composition of the passivation layer. An annealing process is performed to the substrate and the passivation layer. The passivation layer is covered by the auxiliary layer during the annealing process. The auxiliary layer is removed after the annealing process. The ability to constrain and/or passivate free charge in and/or near the passivation layer may be enhanced by performing the annealing process with the auxiliary layer covering the passivation layer. The electrical performance of the image sensing device may be improved accordingly.
19 US2020027913A1
IMAGING ELEMENT AND ELECTRONIC APPARATUS
Publication/Patent Number: US2020027913A1 Publication Date: 2020-01-23 Application Number: 16/484,985 Filing Date: 2018-02-02 Inventor: Nomura, Hirotoshi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example.
20 US2020219920A1
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Publication/Patent Number: US2020219920A1 Publication Date: 2020-07-09 Application Number: 16/555,151 Filing Date: 2019-08-29 Inventor: Hur, Jaesung   Kim, Youngtak   Lim, Hajin   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L27/146 Abstract: An image sensor and a method of fabricating an image sensor, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.