Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
CN109860217B
阵列基板及其制备方法、显示面板
Grant
Publication/Patent Number: CN109860217B Publication Date: 2021-02-26 Application Number: 201910155344.2 Filing Date: 2019-03-01 Inventor: 卓恩宗   杨凤云   Assignee: 惠科股份有限公司   IPC: H01L27/146 Abstract: 本发明涉及一种阵列基板及其制备方法、显示面板。该制备方法能够量化生产,制备出至少具有下列优点的阵列基板:通过第一保护层可以保护其覆盖区域免受污染和损伤;外界光线可直接通过第二导电层照射光敏层上,有助于增加光传感器的感光面积,提升光感测效能;同时,第一导电层可有效阻挡背光源直接照射光敏层,以避免可能的噪声影响,从而可以使得光感测器具有较稳定的光感测性能;通过第二保护层可以防止例如手指按压阵列基板时对各层的挤压损坏,提高使用寿命,同时防止各层出现相对错位的现象,提高用户的体验。
2
US2021057466A1
PIXEL ARRAY WITH ISOLATED PIXELS
Publication/Patent Number: US2021057466A1 Publication Date: 2021-02-25 Application Number: 16/548,697 Filing Date: 2019-08-22 Inventor: Wang, Qin   Chen, Gang   Assignee: OmniVision Technologies, Inc.   IPC: H01L27/146 Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.
3
US2021057472A1
IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: US2021057472A1 Publication Date: 2021-02-25 Application Number: 16/963,817 Filing Date: 2019-03-05 Inventor: Kubo, Norihiro   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: An imaging device includes a photoelectric converter, a charge holding section that is provided on a side of the photoelectric converter opposite to a light entrance side of the photoelectric converter and holds a signal charge generated by the photoelectric converter, and a light shielding section that has a first light shielding surface extending toward the charge holding section from between the charge holding section and the photoelectric converter.
4
US2021074747A1
PIXEL DEVICE LAYOUT TO REDUCE PIXEL NOISE
Publication/Patent Number: US2021074747A1 Publication Date: 2021-03-11 Application Number: 16/565,892 Filing Date: 2019-09-10 Inventor: Takahashi, Seiji   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a first photodetector and a second photodetector each disposed within a semiconductor substrate. An isolation structure extends from a front-side surface of the semiconductor substrate to a back-side surface of the semiconductor substrate. The front-side surface is opposite the back-side surface and the isolation structure is laterally between the first and second photodetectors. A readout transistor is disposed on the front-side surface of the semiconductor substrate. A first side of the readout transistor overlies the first photodetector and a second side of the readout transistor overlies the second photodetector. The first side is opposite the second side and the readout transistor continuously extends over the isolation structure.
5
EP3787026A1
MOUNTING SUBSTRATE TO WHICH IMAGE SENSOR IS MOUNTED, SENSOR PACKAGE AND MANUFACTURING METHOD THEREOF
Publication/Patent Number: EP3787026A1 Publication Date: 2021-03-03 Application Number: 20193552.5 Filing Date: 2020-08-31 Inventor: Naito, Dai   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A sensor package that is configured by molding a frame to a mounting substrate by insert molding and that prevents adhering to components and terminals and reduces damage to the mounting substrate. The sensor package includes an image sensor, a mounting substrate to which the image sensor is mounted, a frame provided in the mounting substrate so as to surround the image sensor, and a cover attached to the frame so as to cover the image sensor. The mounting substrate includes terminals electrically connected with the image sensor and a groove provided in a predetermined depth between an area in which the frame is provided and the terminals.
6
CN112397535A
半导体影像感测器装置及其制造方法
Substantial Examination
Publication/Patent Number: CN112397535A Publication Date: 2021-02-23 Application Number: 202010738104.8 Filing Date: 2020-07-28 Inventor: 林政翰   张朝钦   林艺民   周彦廷   陈言彰   李昇展   周正贤   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L27/146 Abstract: 本揭露提供一种半导体影像感测器装置及其制造方法。例如半导体影像感测器装置包含感测器,具有正面以及背面,在感测器的正面形成金属互连层,在感测器的背面形成抗反射涂层,在抗反射涂层上形成复合蚀刻终止层,其中复合蚀刻终止层包含富氢层以及压缩高密度层,接着在复合蚀刻终止层上形成滤光层。
7
CN112397542A
图像传感模组及时间飞行器件、电子设备
Substantial Examination
Publication/Patent Number: CN112397542A Publication Date: 2021-02-23 Application Number: 202011280523.8 Filing Date: 2020-11-16 Inventor: 张学勇   Assignee: OPPO(重庆)智能科技有限公司   IPC: H01L27/146 Abstract: 本公开涉及电子设备技术领域,具体是关于一种图像传感模组及时间飞行器件、电子设备,所述图像传感模组包括:感光模块、滤光模块和计数模块,所述感光模块包括多个单光子雪崩二极管;所述滤光模块设于所述感光模块的进光侧,所述滤光模块包括多个滤光单元,每个所述滤光单元对应一所述单光子雪崩二极管,多个滤光单元中包括至少两种波段的滤光单元;所述计数模块分别连接多个所述单光子雪崩二极管,所述计数器模组用于对所述单光子二极管响应光信号产生电流的次数进行计数。能够实现微弱光线条件下的彩色成像。
8
US10910428B2
Electronic device image sensor
Publication/Patent Number: US10910428B2 Publication Date: 2021-02-02 Application Number: 16/212,790 Filing Date: 2018-12-07 Inventor: Roy, Francois   Chhun, Sonarith   Assignee: STMicroelectronics (Crolles 2) SAS   IPC: H01L27/146 Abstract: An electronic device includes a substrate semiconductor wafer with semiconductor portions separated from one another by through-passages. Electronic circuits and a dielectric layer with a network of electrical connections are formed at a front face of the substrate semiconductor wafer. Electrically conductive fillings are contained within the through-passages and are connected to the network of electrical connections. Interior dielectric layers for anti-diffusion protection are provided in the through-passages between the electrically conductive fillings and the semiconductor portions. Back side dielectric layers are joined to the interior dielectric layers.
9
US2021036045A1
SEMICONDUCTOR STRUCTURE AND THE MANUFACTURING METHOD THEREOF
Publication/Patent Number: US2021036045A1 Publication Date: 2021-02-04 Application Number: 16/855,803 Filing Date: 2020-04-22 Inventor: Gu, Zhen   Tian, Zhi   Wang, Qiwei   Chen, Haoyu   Assignee: Shanghai Huali Microelectronics Corporation   IPC: H01L27/146 Abstract: The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.
10
US2021036044A1
IMAGE CAPTURING UNIT AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2021036044A1 Publication Date: 2021-02-04 Application Number: 17/075,536 Filing Date: 2020-10-20 Inventor: Kishi, Takafumi   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An image capturing unit includes a plurality of input wiring lines for controlling the semiconductor chip, a plurality of first electrodes connecting to the input wiring lines, and an input connector connecting to the input wiring lines. The substrate includes a first area for mounting an electronic component in an opposite surface on which the semiconductor chip is mounted and a second area for use in mounting the semiconductor chip. The connector is disposed in the first area. At least one or more of the first electrodes are disposed in the second area.
11
CN109427828B
半导体装置的制造方法
Grant
Publication/Patent Number: CN109427828B Publication Date: 2021-02-09 Application Number: 201710785701.4 Filing Date: 2017-09-04 Inventor: 施林波   陈福成   Assignee: 中芯国际集成电路制造(上海)有限公司   中芯国际集成电路制造(北京)有限公司   IPC: H01L27/146 Abstract: 本申请公开了一种半导体装置的制造方法,涉及半导体技术领域。所述方法包括:在顶部晶圆的底面和底部晶圆的顶面上形成水膜;在形成所述水膜后,将所述顶部晶圆的底面和所述底部晶圆的顶面贴合;将贴合后的所述顶部晶圆和所述底部晶圆置于真空环境下;执行热退火工艺,以使得所述顶部晶圆的底面和所述底部晶圆的顶面熔融键合。本申请可以减少键合后的晶圆之间存在的气隙。
12
CN212517206U
一种单面阴极为螺旋环结构的硅像素探测器及其阵列
Grant
Publication/Patent Number: CN212517206U Publication Date: 2021-02-09 Application Number: 202021476273.0 Filing Date: 2020-07-23 Inventor: 李正   程敏   Assignee: 湖南正芯微电子探测器有限公司   IPC: H01L27/146 Abstract: 本实用新型公开了一种单面阴极为螺旋环结构的硅像素探测器及其阵列,包括N型高阻硅衬底,N型高阻硅衬底的顶面上生成有SiO氧化层,SiO氧化层上经刻蚀、离子注入形成有P+重掺杂阴极螺旋环结构,P+重掺杂阴极螺旋环结构为平面螺旋环结构,且P+重掺杂阴极螺旋环结构的中心位置设置有与其连接的收集阴极,N型高阻硅衬底的底面经刻蚀、离子注入形成有n+重掺杂离子注入层。P+重掺杂阴极螺旋环结构以收集阴极作为起始位置逆时针呈方形或多边形向外螺旋延伸至SiO氧化层的任意一侧边缘。单面阴极为螺旋环结构的硅像素探测器组成单面阴极为螺旋环结构的硅像素探测器阵列。减小了探测器有效工作面积,保证探测器低电容的优势。
13
CN109545809B
一种半导体封装器件
Grant
Publication/Patent Number: CN109545809B Publication Date: 2021-02-19 Application Number: 201811341982.5 Filing Date: 2018-11-12 Inventor: 俞国庆   Assignee: 通富微电子股份有限公司   IPC: H01L27/146 Abstract: 本申请公开了一种半导体封装器件,所述封装器件包括:芯片,所述芯片包括正面和背面,所述芯片的正面设置有感光区和位于感光区周围的焊盘;所述芯片对应所述焊盘的位置设置有通孔,所述通孔与所述焊盘一一对应;透明保护层,位于所述芯片的正面且覆盖所述芯片的所述感光区和所述焊盘;电路板,与所述芯片的所述焊盘透过所述通孔电连接。通过上述方式,本申请能够提高芯片的感光效果。
14
CN109326617B
图像检测装置及其制造方法
Grant
Publication/Patent Number: CN109326617B Publication Date: 2021-03-02 Application Number: 201711116403.2 Filing Date: 2017-11-13 Inventor: 张朝钦   李昇展   周正贤   黄琮伟   林明辉   林艺民   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L27/146 Abstract: 一种图像检测装置的制造方法,包括提供具有前表面及背表面的一基底。上述方法包括去除基底的一第一部分,以形成一第一沟槽。上述方法包括形成一第一隔离结构于第一沟槽内,第一隔离结构具有上表面。上述方法包括去除第一隔离沟槽的一第二部分及基底的一第三部分,以形成穿过第一隔离结构并延伸于基底内的一第二沟槽。上述方法包括形成一第二隔离结构于第二沟槽内。上述方法包括形成一光检测区于基底内。上述方法包括去除基底的一第四部分,以露出第二隔离结构的一第一底部及光检测区的背侧。
15
CN112349737A
半导体器件及其形成方法、图像传感器
Substantial Examination
Publication/Patent Number: CN112349737A Publication Date: 2021-02-09 Application Number: 202011164482.6 Filing Date: 2020-10-27 Inventor: 吴聪   谢岩   刘选军   杨帆   李侃   赵宇航   褚海波   Assignee: 武汉新芯集成电路制造有限公司   IPC: H01L27/146 Abstract: 本发明提供一种半导体器件及其形成方法、图像传感器。半导体器件的形成方法包括:提供衬底,在衬底的一侧表面形成多个沟槽,在垂直于衬底的截面上,沟槽的截面宽度从顶部到底部逐渐减小;形成依次覆盖沟槽表面的第一增透膜层、第二增透膜层和第三膜层;第三膜层的折射率、第二增透膜层的折射率以及第一增透膜层的折射率依次增大,以保证光线的传入是从光疏介质传到光密介质,从而将入射光反射率降到最低。沟槽的截面宽度从顶部到底部逐渐减小,扩展了硅片内的光路长度,增加了光的吸收效率;增强了衬底表面对入射光能的俘获能力,即减少光能反射损失,提高器件对光的吸收和转化效率。
16
EP3444843B8
ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION AND METHOD OF PRODUCING AN ASSEMBLY FOR DETECTING ELECTROMAGNETIC RADIATION
Publication/Patent Number: EP3444843B8 Publication Date: 2021-03-24 Application Number: 17186179.2 Filing Date: 2017-08-14 Inventor: FrÖhlich, Thomas   Leitner, Michael   Troxler, Thomas   Pertl, Josef   Hollinger, Dominik   MÜller, Thomas   Fitzi, Andreas   Hofrichter, Jens   Assignee: ams International AG   IPC: H01L27/146
17
CN112542475A
像素传感器、用于形成其的方法及图像传感器
Substantial Examination
Publication/Patent Number: CN112542475A Publication Date: 2021-03-23 Application Number: 201911337191.X Filing Date: 2019-12-23 Inventor: 曹淳凯   卢玠甫   周世培   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L27/146 Abstract: 本公开的各种实施例是针对一种像素传感器,包含在光检测器之下的虚设垂直晶体管结构。像素传感器包含衬底,具有与背侧表面相对的前侧表面。光检测器安置于衬底内。深沟槽隔离(DTI)结构从衬底的背侧表面延伸到背侧表面下方的第一点。深沟槽隔离结构环绕光检测器的外周。虚设垂直晶体管结构在深沟槽隔离结构的内侧壁之间横向间隔开。虚设垂直晶体管结构包含虚设垂直栅极电极,具有虚设导电体和虚设包埋导电结构。虚设包埋导电结构从衬底的前侧表面延伸到第一点垂直上方的第二点且虚设导电体沿衬底的前侧表面延伸。
18
CN108281442B
图像传感器及其形成方法
Grant
Publication/Patent Number: CN108281442B Publication Date: 2021-01-22 Application Number: 201810069702.3 Filing Date: 2018-01-24 Inventor: 高俊九   李志伟   黄仁德   Assignee: 德淮半导体有限公司   IPC: H01L27/146 Abstract: 一种图像传感器及其形成方法,所述方法包括:提供半导体衬底,所述半导体衬底包括并列的逻辑区域和像素区域,其中,在所述半导体衬底的正面,所述逻辑区域内形成有隔离结构;从所述半导体衬底的背面对所述逻辑区域进行刻蚀,以形成凹槽,其中,所述凹槽的底部暴露出所述隔离结构;在所述凹槽内填充介质层。本发明方案有助于降低漏电流以及寄生电容,避免闩锁效应的发生,从而提高器件品质。
19
US10886321B2
Color image-capture element and image capture device
Publication/Patent Number: US10886321B2 Publication Date: 2021-01-05 Application Number: 16/804,393 Filing Date: 2020-02-28 Inventor: Miyata, Masashi   Nakajima, Mitsumasa   Hashimoto, Toshikazu   Assignee: Nippon Telegraph and Telephone Corporation   IPC: H01L27/146 Abstract: Provided is a highly-sensitive color image-capture element and an image capture device that can be simply manufactured, have little polarization dependency, and have micro-spectroscopic elements capable of separating incident light into three wavelength ranges integrated facing a two-dimensional pixel array. An image capture element 100 has a transparent layer 111 having a low refractive index made of SiO2 or the like and a plurality of micro-lenses 103 laminated on a two-dimensional pixel array in which pixels 102 each including a photoelectric conversion element are disposed in an array. Inside the transparent layer 111 having the low refractive index, micro-spectroscopic elements 101 composed of a plurality of microstructures having constant thickness (length in a direction perpendicular to the two-dimensional pixel array) formed of a material such as SiN having a higher refractive index than that of the transparent layer 111 is embedded.
20
US10886318B2
Image sensor
Publication/Patent Number: US10886318B2 Publication Date: 2021-01-05 Application Number: 16/699,150 Filing Date: 2019-11-29 Inventor: Pyo, Junghyung   Lee, Kyungho   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H01L27/146 Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.
Total 500 pages