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21
CN106549027B
包括垂直传输门的图像传感器及其制造方法
Grant
Publication/Patent Number: CN106549027B Publication Date: 2021-01-15 Application Number: 201610335191.6 Filing Date: 2016-05-19 Inventor: 俞景东   李庚寅   Assignee: 爱思开海力士有限公司   IPC: H01L27/146 Abstract: 提供了一种具有改善的特性的图像传感器。根据本发明的一个实施例的图像传感器可以包括:光电转换元件,形成在衬底内;传输门,形成在光电转换元件之上,形成在衬底的第一表面之上,并且具有至少一个通孔,其中通孔穿过传输门;浮置扩散层,形成在传输门之上;沟道结构,形成在通孔内,并且响应于施加给传输门的信号将光电转换元件电耦接到浮置扩散层;以及电容器,形成在浮置扩散层之上。
22
CN112242410A
图像传感器
Public
Publication/Patent Number: CN112242410A Publication Date: 2021-01-19 Application Number: 202010691031.1 Filing Date: 2020-07-17 Inventor: F·罗伊   A·苏勒   Assignee: 意法半导体(克洛尔2)公司   IPC: H01L27/146 Abstract: 本公开涉及一种图像传感器,该图像传感器包括多个像素,每个像素包括:在半导体衬底中竖直地延伸的第一导电类型的掺杂光敏区域;比光敏区域更重地掺杂有第一导电类型的电荷收集区域,电荷收集区域在衬底中从衬底的上表面竖直地延伸并且被布置在光敏区域上方;以及竖直堆叠,其包括竖直传输栅极和竖直电绝缘壁,该堆叠穿过衬底并与电荷收集区域接触,该栅极被布置在衬底的上表面侧上并且比电荷收集区域更深地穿透到衬底中。
23
US2021005646A1
PHOTODETECTOR
Publication/Patent Number: US2021005646A1 Publication Date: 2021-01-07 Application Number: 17/026,864 Filing Date: 2020-09-21 Inventor: Sugiura, Yuki   Inoue, Akito   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: H01L27/146 Abstract: A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.
24
US2021005647A1
IMAGE SENSING DEVICE
Publication/Patent Number: US2021005647A1 Publication Date: 2021-01-07 Application Number: 16/597,618 Filing Date: 2019-10-09 Inventor: Kwag, Pyong Su   Sa, Seung Hoon   Assignee: SK hynix Inc.   IPC: H01L27/146 Abstract: An image sensing device is provided to include a substrate configured to provide pixel regions that are separated from one another by a first isolation structure, a photoelectric conversion element disposed in each of the pixel regions and in a lower region of the substrate, a floating diffusion (FD) region and a first transistor that are disposed in each of the pixel regions and in a first active region positioned in an upper region of the substrate, and a second transistor disposed in each of the pixel regions and in a second active region that is positioned in the upper region of the substrate and separated from the first active region by a second isolation structure. The second isolation structure is disposed to contact a top surface of the substrate and includes an impurity region within a predetermined depth from the top surface of the substrate.
25
US10886320B2
Mechanisms for forming image-sensor device with epitaxial isolation feature
Publication/Patent Number: US10886320B2 Publication Date: 2021-01-05 Application Number: 16/387,989 Filing Date: 2019-04-18 Inventor: Hsu, Wen-i   Hung, Feng-chi   Chuang, Chun-chieh   Yaung, Dun-nian   Liu, Jen-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.
26
US2021003753A1
OPTICAL FILTERS AND IMAGE SENSORS AND CAMERA MODULES AND ELECTRONIC DEVICES
Publication/Patent Number: US2021003753A1 Publication Date: 2021-01-07 Application Number: 16/830,819 Filing Date: 2020-03-26 Inventor: Kim, Mi Jeong   Hwang, Jinyoung   Kim, Ginam   Kim, Hye Ran   Assignee: Samsung Electronics Co., Ltd.   Industry-University Cooperation Foundation Korea Aerospace University   IPC: G02B5/20 Abstract: An optical filter includes a light absorbing layer and a conductive nanodisk. The light absorbing layer includes a near-infrared absorbing material configured to absorb light of a first wavelength spectrum within a near-infrared wavelength spectrum. The conductive nanodisk is configured to absorb or reflect light of a second wavelength spectrum within the first wavelength spectrum. An image sensor includes the optical filter, a camera module includes the optical filter, and an electronic device includes the optical filter.
27
US2021005650A1
SOLID-STATE IMAGING DEVICE
Publication/Patent Number: US2021005650A1 Publication Date: 2021-01-07 Application Number: 17/025,620 Filing Date: 2020-09-18 Inventor: Tamaki, Tokuhiko   Ohtsuki, Hirohisa   Miyagawa, Ryohei   Ishii, Motonori   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: H01L27/146 Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
28
US2021005657A1
IMAGE SENSORS
Publication/Patent Number: US2021005657A1 Publication Date: 2021-01-07 Application Number: 17/029,115 Filing Date: 2020-09-23 Inventor: Kim, Bomi   Kim, Bumsuk   Kim, Jung-saeng   Lee, Yun Ki   Jung, Taesub   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L27/146 Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.
29
CN112185987A
生物识别指纹芯片的封装结构和方法
Public
Publication/Patent Number: CN112185987A Publication Date: 2021-01-05 Application Number: 202011072874.X Filing Date: 2020-10-09 Inventor: 王凯厚   杨剑宏   王鑫琴   Assignee: 苏州晶方半导体科技股份有限公司   IPC: H01L27/146 Abstract: 本发明揭示了一种生物识别指纹芯片的封装结构,包括:芯片单元,具有相对的正面和背面,其正面具有感应区域;聚光透镜阵列,设于芯片单元的正面,包括阵列设置的多个微透镜;间隔设置于芯片单元的正面和聚光透镜阵列之间的多个遮光层,遮光层在微透镜和感应区域之间的光路上开设有透光窗口以形成准直光路。本发明还提供了一种上述生物识别指纹芯片的封装结构的封装方法。本案通过在多层遮光层上开设透光孔,形成了准直的光路,可以阻挡和吸收斜射光,过滤斜射光对图像成型的干扰,聚光效果佳。
30
CN212303667U
图像传感器及其像素单元
Grant
Publication/Patent Number: CN212303667U Publication Date: 2021-01-05 Application Number: 202021359422.5 Filing Date: 2020-07-10 Inventor: 张亮   王萌   董家宁   王安庆   Assignee: 山东大学   IPC: H01L27/146 Abstract: 本实用新型公开了图像传感器及其像素单元,包括:P型衬底;所述P型衬底上设有P型外延层;所述P型外延层上设有第一P阱,所述第一P阱上设有若干个N型有源区;所述P型外延层上设有N阱,所述N阱上设有N型有源区;所述P型外延层上设有第二P阱,所述第二P阱上设有P型有源区;所述第一P阱与N阱连接,所述N阱与第二P阱连接;所述P型外延层的厚度为15微米至30微米。
31
CN112204743A
摄像装置
Public
Publication/Patent Number: CN112204743A Publication Date: 2021-01-08 Application Number: 201980034442.9 Filing Date: 2019-10-07 Inventor: 矶野俊介   百濑龙典   境田良太   Assignee: 松下知识产权经营株式会社   IPC: H01L27/146 Abstract: 本公开的一个方式所涉及的摄像装置具备光电转换层、第1像素电极、第2像素电极、屏蔽电极和第1屏蔽过孔。光电转换层将入射光转换为电荷。第1像素电极收集由光电转换层生成的电荷。第2像素电极收集由光电转换层生成的电荷。第2像素电极在第1方向上与第1像素电极相邻。屏蔽电极与第1像素电极及第2像素电极电分离。第1屏蔽过孔从屏蔽电极延伸。在平面视中,第1屏蔽过孔位于第1像素电极与第2像素电极之间。
32
CN212342627U
传感器组件、摄像头模组以及摄像装置
Grant
Publication/Patent Number: CN212342627U Publication Date: 2021-01-12 Application Number: 202020346509.2 Filing Date: 2020-03-18 Inventor: 罗科   Assignee: 南昌欧菲光电技术有限公司   IPC: H01L27/146 Abstract: 本实用新型公开了一种传感器组件、摄像头模组以及摄像装置。传感器组件包括基板和传感器,传感器设置于基板的一板面,传感器的轮廓线包括沿着第一方向延伸的第一边界,传感器上且在靠近第一边界的位置设有多个第一传感器焊盘,基板上且位于传感器的外围对应多个第一传感器焊盘设置有多个第一基板焊盘,多个第一基板焊盘沿着第一方向呈单排排布,每一个第一传感器焊盘与对应的第一基板焊盘之间通过第一金属导线电性连接,且第一金属导线为沿着从第一基板焊盘至第一传感器焊盘的方向打线形成。本申请通过改变基板焊盘与传感器焊盘之间的打线方向,这样能够缩小基板焊盘的结构尺寸,进而能够将基板焊盘单排排布。
33
US10887499B2
Camera assembly and packaging methods thereof, lens module, and electronic device
Publication/Patent Number: US10887499B2 Publication Date: 2021-01-05 Application Number: 16/235,414 Filing Date: 2018-12-28 Inventor: Chen, Da   Liu, Mengbin   Assignee: Ningbo Semiconductor International Corporation   IPC: H01L27/146 Abstract: The present disclosure provides a method for packaging a camera assembly. The method includes providing a photosensitive chip having a plurality of first soldering pads; mounting a filter on the photosensitive chip; providing a first carrier substrate; and bonding a plurality of functional components and the photosensitive chip to the first carrier substrate. The plurality of functional components has a plurality of second soldering pads, and the first soldering pads and the second soldering pads all face away from the first carrier substrate. The method includes forming an encapsulation layer to cover the first carrier substrate, the photosensitive chip, and the functional components. The encapsulation layer exposes the filter. The method further includes forming a redistribution layer structure, on one side of the encapsulation layer close to the filter, to electrically connect to the first soldering pads and the second soldering pads; and removing the first carrier substrate.
34
CN112234024A
浅沟槽隔离结构的顶角圆化方法
Public
Publication/Patent Number: CN112234024A Publication Date: 2021-01-15 Application Number: 202011292942.3 Filing Date: 2020-11-18 Inventor: 邱元元   黄鹏   郭振强   Assignee: 华虹半导体(无锡)有限公司   IPC: H01L21/762 Abstract: 本申请涉及半导体集成电路制造技术领域,具体涉及一种浅沟槽隔离结构的顶角圆化方法。包括:提供半导体硅衬底,刻蚀半导体硅衬底形成浅沟槽结构;在浅沟槽结构的内壁上形成第一氧化层;在浅沟槽结构的第一氧化层表面上生长形成氮化硅层;向生长形成有氮化硅层的浅沟槽隔离结构中,填充隔离介质层;去除位于浅沟槽结构顶角周侧的氮化硅层,使得剩余氮化硅层的顶端与半导体硅衬底上表面之间形成高度差,使得浅沟槽结构顶角周侧与隔离介质层之间形成凹槽;去除位于凹槽中的第一氧化层,使得位于凹槽中的半导体硅衬底表面外露;通过湿氧氧化工艺,使得外露于凹槽中的半导体硅衬底与氧气反应,使得浅沟槽结构顶角位置处的半导体硅衬底圆化。
35
CN108370426B
摄像器件和电子装置
Grant
Publication/Patent Number: CN108370426B Publication Date: 2021-01-19 Application Number: 201680073463.8 Filing Date: 2016-12-08 Inventor: 佃恭范   高宫健一   Assignee: 索尼公司   IPC: H04N5/378 Abstract: 本发明涉及摄像器件。所述摄像器件包括:像素基板,其包括像素元件电路;逻辑基板,其包括读取电路,所述读取电路被配置成接收来自所述像素元件电路的输出信号电压;和导电材料,其布置在所述像素基板与所述逻辑基板之间,其中,所述导电材料被配置成从所述逻辑基板向所述像素基板传输至少一个参考电压,并且其中,所述导电材料包括Cu‑Cu接合部。
36
US2021005659A1
SOLID-STATE IMAGING APPARATUS, METHOD FOR MANUFACTURING SOLID-STATE IMAGING APPARATUS, AND ELECTRONIC EQUIPMENT EQUIPPED WITH SOLID-STATE IMAGING APPARATUS
Publication/Patent Number: US2021005659A1 Publication Date: 2021-01-07 Application Number: 17/040,520 Filing Date: 2019-03-05 Inventor: Nishizawa, Kenichi   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: Provided are a solid-state imaging apparatus, a method for manufacturing a solid-state imaging apparatus, and an electronic apparatus equipped with a solid-state imaging apparatus that can reduce the size of a semiconductor chip in such a way that one semiconductor substrate having a logic circuit controls two sensors. Provided is a solid-state imaging apparatus including a first sensor, a first semiconductor substrate having a memory, a second semiconductor substrate having a logic circuit, and a second sensor, in which the first sensor, the first semiconductor substrate, the second semiconductor substrate, and the second sensor are arranged in this order.
37
CN112217963A
一种感光组件的制备方法、感光组件、以及摄像模组
Public
Publication/Patent Number: CN112217963A Publication Date: 2021-01-12 Application Number: 201910619763.7 Filing Date: 2019-07-10 Inventor: 黄桢   刘丽   许晨祥   陈佳炜   Assignee: 宁波舜宇光电信息有限公司   IPC: H04N5/225 Abstract: 本发明公开了一种感光组件的制备方法,所述方法包括:将感光元件设置于基板上;在所述感光元件的全部或部分表面设置补偿部;在所述基板上对设置有所述补偿部的感光元件进行模塑处理;除去所述补偿部。本发明还涉及一种感光组件、一种拼版以及一种摄像模组。本发明所述的感光组件,所述感光组件具有所述隔离通道,所述隔离通道将所述模塑体与所述感光元件的侧表面隔离开,使得所述模塑体与所述隔离通道不接触,从而可预防应力从所述模塑体向所述感光元件传递,进而预防或降低所述感光元件发生形变或/位移,从而保护所述感光元件。
38
US2021005652A1
IMAGE SENSING DEVICE
Publication/Patent Number: US2021005652A1 Publication Date: 2021-01-07 Application Number: 16/597,572 Filing Date: 2019-10-09 Inventor: Gu, Tae Lim   Yang, Yun Hui   Assignee: SK hynix Inc.   IPC: H01L27/146 Abstract: An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.
39
CN112164702A
一种矩阵式射线成像板制备方法
Public
Publication/Patent Number: CN112164702A Publication Date: 2021-01-01 Application Number: 202010907766.3 Filing Date: 2020-09-02 Inventor: 郭素文   郑岩   张瑞君   全丽华   蔡震涛   陈磊   Assignee: 上海洞舟实业有限公司   IPC: H01L27/146 Abstract: 本发明一种矩阵式射线成像板制备方法;其包括纳米射线探测材料、反光层、吸收剂、树脂粘结剂、保护层;其特征在于将粘结剂与吸收剂、射线探测材料按比例进行密炼、造粒,然后将造粒后的混合物置于模具内,在模具底部加入反光薄膜,利用热压方式将材料热压制备成板材,然后利用丝网印刷、喷涂、刮涂方式在表面制备出保护层,同时在成像板表面制备出矩阵列就得到所需的射线成像板,将矩阵成像板与TFT成像器件配合使用可以实现射线成像。
40
CN109713001B
一种X射线平板探测器及其制备方法
Grant
Publication/Patent Number: CN109713001B Publication Date: 2021-01-19 Application Number: 201811454893.1 Filing Date: 2018-11-30 Inventor: 杨华   Assignee: 上海奕瑞光电子科技股份有限公司   IPC: H01L27/146 Abstract: 本发明提供了一种X射线平板探测器及其制备方法。X射线平板探测器包括:基底,该基板包括非封装区域以及包围所述非封装区域的封装区域;反射层,涂覆于所述基板下表面;Frit封装层,形成于与基板的封装区域对应的所述反射层上;闪烁体层,形成于与基板非封装区域对应的所述反射层上;黏胶层,覆盖于所述可见光传感器表面;可见光传感器,位于所述Frit封装层上,与所述基板平行设置;其中,所述Frit封装层将所述闪烁体层封装在所述基板与所述可见光传感器组成的密闭腔体内。通过Frit封装闪烁体层,改善X射线平板探测器的封装密封性,提高在高温高湿环境条件下的可靠性和延长寿命。