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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
41
CN112242410A
图像传感器
Public
Publication/Patent Number: CN112242410A Publication Date: 2021-01-19 Application Number: 202010691031.1 Filing Date: 2020-07-17 Inventor: F·罗伊   A·苏勒   Assignee: 意法半导体(克洛尔2)公司   IPC: H01L27/146 Abstract: 本公开涉及一种图像传感器,该图像传感器包括多个像素,每个像素包括:在半导体衬底中竖直地延伸的第一导电类型的掺杂光敏区域;比光敏区域更重地掺杂有第一导电类型的电荷收集区域,电荷收集区域在衬底中从衬底的上表面竖直地延伸并且被布置在光敏区域上方;以及竖直堆叠,其包括竖直传输栅极和竖直电绝缘壁,该堆叠穿过衬底并与电荷收集区域接触,该栅极被布置在衬底的上表面侧上并且比电荷收集区域更深地穿透到衬底中。
42
CN106549027B
包括垂直传输门的图像传感器及其制造方法
Grant
Publication/Patent Number: CN106549027B Publication Date: 2021-01-15 Application Number: 201610335191.6 Filing Date: 2016-05-19 Inventor: 俞景东   李庚寅   Assignee: 爱思开海力士有限公司   IPC: H01L27/146 Abstract: 提供了一种具有改善的特性的图像传感器。根据本发明的一个实施例的图像传感器可以包括:光电转换元件,形成在衬底内;传输门,形成在光电转换元件之上,形成在衬底的第一表面之上,并且具有至少一个通孔,其中通孔穿过传输门;浮置扩散层,形成在传输门之上;沟道结构,形成在通孔内,并且响应于施加给传输门的信号将光电转换元件电耦接到浮置扩散层;以及电容器,形成在浮置扩散层之上。
43
CN109786407B
半导体图像传感器及其形成方法
Grant
Publication/Patent Number: CN109786407B Publication Date: 2021-01-22 Application Number: 201811083120.7 Filing Date: 2018-09-17 Inventor: 郑允玮   周俊豪   李国政   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L27/146 Abstract: 本发明的实施例涉及形成偏振光栅结构(例如,偏振器)作为背照式图像传感器器件的栅格结构的一部分的方法。例如,该方法包括在具有辐射感测区域的半导体层上方形成层堆叠件。此外,该方法包括在栅格结构内形成一个或多个偏振光栅结构的光栅元件,其中,形成光栅元件包括(i)蚀刻层堆叠件以形成栅格结构以及(ii)蚀刻层堆叠件以形成定向为偏振角的光栅元件。本发明的实施例还提供了半导体图像传感器及其形成方法。
44
CN108831901B
背照式图像传感器及其制作方法
Grant
Publication/Patent Number: CN108831901B Publication Date: 2021-01-22 Application Number: 201811030066.X Filing Date: 2018-09-05 Inventor: 佟璐   陈世杰   黄晓橹   Assignee: 德淮半导体有限公司   IPC: H01L27/146 Abstract: 本发明技术方案公开了一种背照式图像传感器及其制作方法,所述图像传感器包括形成有一个以上光电二极管的半导体基板,所述半导体基板包含不同的像素区域,所述光电二极管对应于不同的像素区域;位于半导体基板上的绝缘膜;部分覆盖所述绝缘膜并且隔离所述不同的像素区域的第一遮光层;覆盖所述第一遮光层和绝缘膜的粘附膜;部分覆盖所述粘附膜并与各光电二极管的位置对应的滤色层,所述各滤色层之间通过第一遮光层和粘附膜形成的复合结构隔离;位于所述复合结构上的吸光层;位于各滤色层上的微透镜,所述吸光层完全隔离所述微透镜。所述图像传感器能更有效的防止外部反射光进入光电二极管,提高了图像传感器的性能。
45
CN109087928B
光电探测基板及其制备方法、光电探测装置
Grant
Publication/Patent Number: CN109087928B Publication Date: 2021-01-26 Application Number: 201810931892.5 Filing Date: 2018-08-16 Inventor: 黄睿   杨昕   周天民   吴慧利   Assignee: 京东方科技集团股份有限公司   IPC: H01L27/146 Abstract: 本发明提供了一种光电探测基板及其制造方法、光电探测装置。光电探测基板包括共面结构的薄膜晶体管和光电二极管,所述薄膜晶体管为垂直沟道结构。本发明通过将垂直沟道结构的薄膜晶体管和光电二极管构成共面结构,有效减小了光电探测基板的整体厚度,减少了由应力引起的基板形变,避免了基板形变带来的损伤,提高了产品良品率。同时,由于采用共面结构,因而薄膜晶体管和光电二极管可以同步制备,减少了构图工艺次数,简化了制备流程,降低了生产成本。此外,由于垂直沟道结构薄膜晶体管占用面积小,能够使得光电二极管的感光面积得以增加,因而可以提高探测效率,提高产品分辨率。
46
US2021005646A1
PHOTODETECTOR
Publication/Patent Number: US2021005646A1 Publication Date: 2021-01-07 Application Number: 17/026,864 Filing Date: 2020-09-21 Inventor: Sugiura, Yuki   Inoue, Akito   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: H01L27/146 Abstract: A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.
47
US2021005647A1
IMAGE SENSING DEVICE
Publication/Patent Number: US2021005647A1 Publication Date: 2021-01-07 Application Number: 16/597,618 Filing Date: 2019-10-09 Inventor: Kwag, Pyong Su   Sa, Seung Hoon   Assignee: SK hynix Inc.   IPC: H01L27/146 Abstract: An image sensing device is provided to include a substrate configured to provide pixel regions that are separated from one another by a first isolation structure, a photoelectric conversion element disposed in each of the pixel regions and in a lower region of the substrate, a floating diffusion (FD) region and a first transistor that are disposed in each of the pixel regions and in a first active region positioned in an upper region of the substrate, and a second transistor disposed in each of the pixel regions and in a second active region that is positioned in the upper region of the substrate and separated from the first active region by a second isolation structure. The second isolation structure is disposed to contact a top surface of the substrate and includes an impurity region within a predetermined depth from the top surface of the substrate.
48
US10886320B2
Mechanisms for forming image-sensor device with epitaxial isolation feature
Publication/Patent Number: US10886320B2 Publication Date: 2021-01-05 Application Number: 16/387,989 Filing Date: 2019-04-18 Inventor: Hsu, Wen-i   Hung, Feng-chi   Chuang, Chun-chieh   Yaung, Dun-nian   Liu, Jen-cheng   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01L27/146 Abstract: An image-sensor device includes a substrate including a pixel region and a logic region. A logic transistor is disposed in the logic region and is surrounded by a logic isolation feature. A radiation-sensing region is disposed in the pixel region of the substrate. An epitaxial pixel isolation feature is disposed in the pixel region and surrounds the radiation-sensing region. A doped region with a same doping polarity as the radiation-sensing region is located between a bottom of the radiation-sensing region and the back surface of the substrate. The epitaxial pixel isolation feature is in direct contact with the doped region. The doped region extends continuously under the pixel region and the logic region. The epitaxial pixel isolation feature is in direct contact with the doped region, and the logic isolation feature is spaced apart from the doped region.
49
CN109065564B
图像传感器及其形成方法
Grant
Publication/Patent Number: CN109065564B Publication Date: 2021-01-22 Application Number: 201811147295.X Filing Date: 2018-09-29 Inventor: 何延强   林宗德   黄仁德   李晓明   Assignee: 德淮半导体有限公司   IPC: H01L27/146 Abstract: 一种图像传感器及其形成方法,图像传感器包括:衬底,衬底包括第一像素区和第二像素区;位于第一像素区衬底表面用于通过单色光的第一滤光层;位于第二像素区衬底表面的用于透过自然光的第二滤光层;位于第一像素区的第一抗反射结构,第一抗反射结构包括第一抗反射涂层和第二抗反射涂层中的一者或两者,第一抗反射涂层位于第一滤光层与衬底之间,第二抗反射涂层位于第一滤光层上;位于第二像素区的第二抗反射结构,第二抗反射结构的厚度小于第一抗反射结构,第二抗反射结构包括第三抗反射涂层和第四抗反射涂层中的一者或两者,第三抗反射涂层位于第二滤光层与衬底之间,第四抗反射涂层位于第二滤光层上。所述图像传感器的性能得到提高。
50
CN109273472B
BSI图像传感器及其形成方法
Grant
Publication/Patent Number: CN109273472B Publication Date: 2021-01-22 Application Number: 201811108922.9 Filing Date: 2018-09-21 Inventor: 刘西域   孟宪宇   吴宗祐   林宗贤   Assignee: 德淮半导体有限公司   IPC: H01L27/146 Abstract: 一种BSI图像传感器及其形成方法,所述形成方法包括:提供器件晶圆和承载晶圆,所述器件晶圆内具有多个图像传感器器件,相邻的图像传感器器件之间具有切割区域,且所述器件晶圆的正面具有第一键合层,所述承载晶圆的正面具有第二键合层;对所述切割区域内的第一键合层进行刻蚀以得到多个第一沟槽,和/或,对所述第二键合层进行刻蚀以得到多个第二沟槽;将所述器件晶圆的正面以及所述承载晶圆的正面键合。本发明方案可以减少键合层中的空洞,提高BSI图像传感器的品质。
51
CN109411500B
探测面板及其制作方法
Grant
Publication/Patent Number: CN109411500B Publication Date: 2021-01-22 Application Number: 201811290845.3 Filing Date: 2018-10-31 Inventor: 程浩   池彦菲   邱鑫茂   庄子华   王进   石常洪   周敏   吕耀朝   刘耀   陈曦   Assignee: 京东方科技集团股份有限公司   福州京东方光电科技有限公司   IPC: H01L27/146 Abstract: 一种探测面板及其制作方法。该探测面板包括:感光元件,配置为感应入射的第一光线以产生感光信号;驱动电路,配置为与所述感光元件耦接以从所述感光元件获取所述感光信号;以及反射光栅,设置于所述驱动电路的所述第一光线入射的一侧,且配置为对所述第一光线进行反射。该探测面板设置反射光栅对驱动电路进行遮光,具有好的遮光效果。
52
EP3762967A1
BINNING PIXELS
Publication/Patent Number: EP3762967A1 Publication Date: 2021-01-13 Application Number: 18726811.5 Filing Date: 2018-05-25 Inventor: Danilo, Turchetta Renato Andrea   Sannino, Michele   Bofill, Adrià   Assignee: IMASENIC ADVANCED IMAGING, S.L.   IPC: H01L27/146
53
US2021003753A1
OPTICAL FILTERS AND IMAGE SENSORS AND CAMERA MODULES AND ELECTRONIC DEVICES
Publication/Patent Number: US2021003753A1 Publication Date: 2021-01-07 Application Number: 16/830,819 Filing Date: 2020-03-26 Inventor: Kim, Mi Jeong   Hwang, Jinyoung   Kim, Ginam   Kim, Hye Ran   Assignee: Samsung Electronics Co., Ltd.   Industry-University Cooperation Foundation Korea Aerospace University   IPC: G02B5/20 Abstract: An optical filter includes a light absorbing layer and a conductive nanodisk. The light absorbing layer includes a near-infrared absorbing material configured to absorb light of a first wavelength spectrum within a near-infrared wavelength spectrum. The conductive nanodisk is configured to absorb or reflect light of a second wavelength spectrum within the first wavelength spectrum. An image sensor includes the optical filter, a camera module includes the optical filter, and an electronic device includes the optical filter.
54
US2021005650A1
SOLID-STATE IMAGING DEVICE
Publication/Patent Number: US2021005650A1 Publication Date: 2021-01-07 Application Number: 17/025,620 Filing Date: 2020-09-18 Inventor: Tamaki, Tokuhiko   Ohtsuki, Hirohisa   Miyagawa, Ryohei   Ishii, Motonori   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: H01L27/146 Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
55
US2021005657A1
IMAGE SENSORS
Publication/Patent Number: US2021005657A1 Publication Date: 2021-01-07 Application Number: 17/029,115 Filing Date: 2020-09-23 Inventor: Kim, Bomi   Kim, Bumsuk   Kim, Jung-saeng   Lee, Yun Ki   Jung, Taesub   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L27/146 Abstract: Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.
56
CN212303667U
图像传感器及其像素单元
Grant
Publication/Patent Number: CN212303667U Publication Date: 2021-01-05 Application Number: 202021359422.5 Filing Date: 2020-07-10 Inventor: 张亮   王萌   董家宁   王安庆   Assignee: 山东大学   IPC: H01L27/146 Abstract: 本实用新型公开了图像传感器及其像素单元,包括:P型衬底;所述P型衬底上设有P型外延层;所述P型外延层上设有第一P阱,所述第一P阱上设有若干个N型有源区;所述P型外延层上设有N阱,所述N阱上设有N型有源区;所述P型外延层上设有第二P阱,所述第二P阱上设有P型有源区;所述第一P阱与N阱连接,所述N阱与第二P阱连接;所述P型外延层的厚度为15微米至30微米。
57
CN112204743A
摄像装置
Public
Publication/Patent Number: CN112204743A Publication Date: 2021-01-08 Application Number: 201980034442.9 Filing Date: 2019-10-07 Inventor: 矶野俊介   百濑龙典   境田良太   Assignee: 松下知识产权经营株式会社   IPC: H01L27/146 Abstract: 本公开的一个方式所涉及的摄像装置具备光电转换层、第1像素电极、第2像素电极、屏蔽电极和第1屏蔽过孔。光电转换层将入射光转换为电荷。第1像素电极收集由光电转换层生成的电荷。第2像素电极收集由光电转换层生成的电荷。第2像素电极在第1方向上与第1像素电极相邻。屏蔽电极与第1像素电极及第2像素电极电分离。第1屏蔽过孔从屏蔽电极延伸。在平面视中,第1屏蔽过孔位于第1像素电极与第2像素电极之间。
58
CN212342627U
传感器组件、摄像头模组以及摄像装置
Grant
Publication/Patent Number: CN212342627U Publication Date: 2021-01-12 Application Number: 202020346509.2 Filing Date: 2020-03-18 Inventor: 罗科   Assignee: 南昌欧菲光电技术有限公司   IPC: H01L27/146 Abstract: 本实用新型公开了一种传感器组件、摄像头模组以及摄像装置。传感器组件包括基板和传感器,传感器设置于基板的一板面,传感器的轮廓线包括沿着第一方向延伸的第一边界,传感器上且在靠近第一边界的位置设有多个第一传感器焊盘,基板上且位于传感器的外围对应多个第一传感器焊盘设置有多个第一基板焊盘,多个第一基板焊盘沿着第一方向呈单排排布,每一个第一传感器焊盘与对应的第一基板焊盘之间通过第一金属导线电性连接,且第一金属导线为沿着从第一基板焊盘至第一传感器焊盘的方向打线形成。本申请通过改变基板焊盘与传感器焊盘之间的打线方向,这样能够缩小基板焊盘的结构尺寸,进而能够将基板焊盘单排排布。
59
CN112185987A
生物识别指纹芯片的封装结构和方法
Substantial Examination
Publication/Patent Number: CN112185987A Publication Date: 2021-01-05 Application Number: 202011072874.X Filing Date: 2020-10-09 Inventor: 王凯厚   杨剑宏   王鑫琴   Assignee: 苏州晶方半导体科技股份有限公司   IPC: H01L27/146 Abstract: 本发明揭示了一种生物识别指纹芯片的封装结构,包括:芯片单元,具有相对的正面和背面,其正面具有感应区域;聚光透镜阵列,设于芯片单元的正面,包括阵列设置的多个微透镜;间隔设置于芯片单元的正面和聚光透镜阵列之间的多个遮光层,遮光层在微透镜和感应区域之间的光路上开设有透光窗口以形成准直光路。本发明还提供了一种上述生物识别指纹芯片的封装结构的封装方法。本案通过在多层遮光层上开设透光孔,形成了准直的光路,可以阻挡和吸收斜射光,过滤斜射光对图像成型的干扰,聚光效果佳。
60
US2021012082A1
FINGERPRINT DETECTION APPARATUS AND DISPLAY APPARATUS
Publication/Patent Number: US2021012082A1 Publication Date: 2021-01-14 Application Number: 17/033,040 Filing Date: 2020-09-25 Inventor: Uchida, Makoto   Tsunashima, Takanori   Tada, Masahiro   Ito, Tomoyuki   Nakamura, Takashi   Assignee: Japan Display Inc.   IPC: G06K9/00 Abstract: A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.