Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
61
CN112216659A
集成结构及其制作方法、电子器件、图像传感器模块
Public
Publication/Patent Number: CN112216659A Publication Date: 2021-01-12 Application Number: 201911142884.3 Filing Date: 2019-11-20 Inventor: 桂珞   黄河   向阳辉   Assignee: 中芯集成电路(宁波)有限公司   IPC: H01L23/31 Abstract: 本发明提供了一种具有密封空间的集成结构及其制作方法、电子器件、图像传感器模块。具有密封空间的集成结构包括封盖、转接机构、芯片、密封元件。转接机构设置于封盖上,所述转接机构围成环形空间,密封元件密封所述芯片和所述转接机构之间的空隙,使所述环形空间为密封空间,芯片置于密封空间内,提高了芯片的抗污染能力,降低了芯片后续再操作的工艺环境要求,提高良率。转接机构包括电磁干扰屏蔽层,封盖与电磁干扰屏蔽层电连接,从而提高了芯片和转接机构的抗电磁干扰能力。避免在芯片上打线对焊盘造成损伤,提高产品良率。电子器件将集成结构封装在封装基板上,便于使用。图像传感器模块提高了图像传感器芯片的抗污染能力。
62
US2021006735A1
IMAGING DEVICE INCLUDING PHOTOELECTRIC CONVERSION LAYER
Publication/Patent Number: US2021006735A1 Publication Date: 2021-01-07 Application Number: 17/026,851 Filing Date: 2020-09-21 Inventor: Miyake, Yasuo   Murakami, Masashi   Tamaki, Tokuhiko   Satou, Yoshiaki   Assignee: Panasonic Intellectual Property Management Co., Ltd.   IPC: H04N5/353 Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period.
63
CN108293098B
固态成像器件、成像装置和电子设备
Grant
Publication/Patent Number: CN108293098B Publication Date: 2021-01-19 Application Number: 201680063615.6 Filing Date: 2016-09-20 Inventor: 中村成希   大槻盛一   Assignee: 索尼半导体解决方案公司   IPC: H04N5/355 Abstract: 根据本发明的固态成像器件设置有:像素阵列单元,其中,包含光电转换元件的单位像素被布置为矩阵形式,单位像素被分成多个像素组;和时序控制器,该时序控制器针对多个像素组中的各组独立地设定曝光开始时刻和曝光结束时刻,使得对于多个像素组中的至少一个像素组来说,在单个垂直同步时段内发生多次曝光。
64
CN112166499A
图像传感器和电子装置
Substantial Examination
Publication/Patent Number: CN112166499A Publication Date: 2021-01-01 Application Number: 202080002262.5 Filing Date: 2020-02-19 Inventor: 姚国峰   沈健   Assignee: 深圳市汇顶科技股份有限公司   IPC: H01L23/373 Abstract: 本申请提供一种图像传感器和电子装置,图像传感器包括像素晶片和逻辑晶片,像素晶片的朝向感光方向的一侧设置有用于感光的像素阵列,逻辑晶片堆叠设置在像素晶片的背离感光方向的一侧,逻辑晶片用于和像素阵列之间传输信号;像素晶片具有第一衬底,逻辑晶片具有第二衬底,第一衬底和第二衬底之间设有阻热组件,阻热组件用于将逻辑晶片内的热量进行阻挡,以降低暗电流的大小。本申请能够改善暗电流的特性,有助于提升图像传感器的成像品质。
65
US2021006737A1
SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE
Publication/Patent Number: US2021006737A1 Publication Date: 2021-01-07 Application Number: 17/028,269 Filing Date: 2020-09-22 Inventor: Nojima, Kenta   Nishikido, Kenju   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H04N5/369 Abstract: There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.
66
CN112204765A
光电转换元件和光电转换元件的制造方法
Public
Publication/Patent Number: CN112204765A Publication Date: 2021-01-08 Application Number: 201980034718.3 Filing Date: 2019-05-13 Inventor: 齐藤阳介   宫地左伊   菅野雅人   氏家康晴   长谷川雄大   榎修   根岸佑树   Assignee: 索尼公司   索尼半导体解决方案公司   IPC: H01L51/42 Abstract: 根据本发明一个实施例的第一光电转换元件包括:第一电极;第二电极,所述第二电极被布置为与所述第一电极相对;和光电转换层,所述光电转换层设置在所述第一电极和所述第二电极之间并且包含发色团、富勒烯或其衍生物和空穴传输材料,其中,所述发色团和所述富勒烯或其衍生物在所述光电转换层中通过交联基团至少部分地彼此结合。
67
CN112166504A
摄像装置
Public
Publication/Patent Number: CN112166504A Publication Date: 2021-01-01 Application Number: 201980034585.X Filing Date: 2019-04-03 Inventor: 籾内雄太   高冈裕二   Assignee: 索尼半导体解决方案公司   IPC: H01L27/146 Abstract: 根据本发明,重新布线区域(22)设置在摄像元件(20)的正面(像素形成表面)FA上的除像素区域(21)以外的区域中。模制部分(30)形成在除正面FA以外的摄像元件(20)的周围。连接外部端子和设置在重新布线区域(22)中的焊盘(23)的重新布线层(41b)、(42b)、和(43b)经由绝缘层(41a)、(42a)和(43a)形成在摄像元件(20)和模制部分(30)的像素形成表面侧。因此,即使减小焊盘之间的间隔,也能连接到基板,摄像装置(10)的安装表面也位于像素形成表面侧,并且可以减小尺寸和高度。
68
US2021005654A1
IMAGING ELEMENT, IMAGING DEVICE, AND MANUFACTURING APPARATUS AND METHOD
Publication/Patent Number: US2021005654A1 Publication Date: 2021-01-07 Application Number: 17/027,486 Filing Date: 2020-09-21 Inventor: Fukuoka, Shinpei   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H01L27/146 Abstract: The present technology relates to an imaging element, an imaging device, and a manufacturing apparatus and a method that facilitate electric charge transfer. An imaging element of the present technology includes a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. Also, an imaging device of the present technology includes: an imaging element including a vertical transistor that has a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit; and an image processing unit that performs image processing on captured image data obtained by the imaging element. Further, a manufacturing apparatus of the present technology includes a vertical transistor manufacturing unit that manufactures a vertical transistor having a potential with a gradient in at least part of a charge transfer channel that transfers electric charge of a photoelectric conversion unit. The present technology can be applied to imaging elements, imaging devices, and manufacturing apparatuses and methods, for example.
69
CN112219280A
光接收元件、测距模块和电子设备
Public
Publication/Patent Number: CN112219280A Publication Date: 2021-01-12 Application Number: 201980038147.0 Filing Date: 2019-06-21 Inventor: 片山泰志   Assignee: 索尼半导体解决方案公司   IPC: H01L27/146 Abstract: 本发明涉及能够减少电荷传输期间的信号劣化的光接收元件、测距模块和电子设备。所述光接收元件包括像素,所述像素至少包括:第一电荷保持单元和第二电荷保持单元,它们每者保持由光电二极管产生的电荷;第一传输晶体管,其将所述电荷传输到所述第一电荷保持单元;和第二传输晶体管,其将所述电荷传输到所述第二电荷保持单元,其中,所述第一传输晶体管和所述第二传输晶体管均由包括垂直栅电极部的垂直晶体管构成。本技术可以应用于例如通过间接ToF方法执行测距的光接收元件等。
70
CN109804616B
摄像装置
Grant
Publication/Patent Number: CN109804616B Publication Date: 2021-01-08 Application Number: 201780059121.5 Filing Date: 2017-05-17 Inventor: 田岛和幸   岛野健   宇津木健   Assignee: 株式会社日立制作所   IPC: H04N5/225 Abstract: 摄像装置具备:图像传感器,将被取入到在摄像面以阵列状排列的多个像素的光学像变换为图像信号并输出;调制部,设置于图像传感器的受光面,调制光的强度;以及图像处理部,对从图像传感器输出的输出图像实施图像处理,调制部具有:光栅基板;以及第1光栅图案,形成于与接近图像传感器的受光面的面对置的光栅基板的第1面。光栅图案由间距相对从至少一个基准坐标的原点起的距离成反比的多个同心圆分别构成,多个同心圆在光栅图案内相互不重叠,基准坐标被配置为相对受光面的中央的法线对称。由此,提高配置有由间距相对从原点起的距离成反比的多个同心圆构成的衍射光栅基板的摄像装置的分辨率。
71
CN107871726B
堆叠半导体衬底之间的接触沟槽
Grant
Publication/Patent Number: CN107871726B Publication Date: 2021-01-12 Application Number: 201710179654.9 Filing Date: 2017-03-23 Inventor: F·罗伊   Assignee: 意法半导体(克洛尔2)公司   IPC: H01L23/538 Abstract: 第一半导体衬底层支撑第一晶体管,该第一晶体管包括由该衬底层的掺杂区域形成的第一源漏。第二半导体衬底层支撑第二晶体管,该第二晶体管包括由该衬底层的掺杂区域形成的第二源漏。该第二半导体衬底层被叠置于该第一半导体衬底层之上并且通过绝缘层与该第一半导体衬底层分隔开。金属布线从与用于该第一源漏的该掺杂区域的电接触延伸,通过该绝缘层,并且穿过该第二半导体衬底层中的电隔离结构以与用于该第二源漏的该掺杂区域进行电接触。该电隔离结构由沟槽隔离或该第二源漏的该掺杂区域本身中的一项形成。该隔离结构的厚度等于该第二半导体衬底层的厚度。
72
CN107615753B
固态摄像器件、用于固态摄像器件的控制方法及电子设备
Grant
Publication/Patent Number: CN107615753B Publication Date: 2021-01-19 Application Number: 201680030242.2 Filing Date: 2016-07-13 Inventor: 榊原雅树   栃木靖久   Assignee: 索尼公司   IPC: H04N5/378 Abstract: 本发明涉及能够在实现宽动态范围的同时抑制PLS的影响的固态摄像器件、用于固态摄像器件的控制方法以及电子设备。固态摄像器件包括像素阵列单元,在像素阵列单元中排列有多个像素。像素阵列单元中的一部分像素是至少具有一个光电转换元件以及溢出累积电容器的单位像素。此外,固态摄像器件在像素阵列单元中针对一个或多个单位像素还包括一个AD转换器。本发明例如可应用于固态摄像器件。
73
CN112164703A
阵列基板及其制作方法、显示面板
Substantial Examination
Publication/Patent Number: CN112164703A Publication Date: 2021-01-01 Application Number: 202010981282.3 Filing Date: 2020-09-17 Inventor: 张愉   江淼   姚江波   陈黎暄   张鑫   Assignee: 深圳市华星光电半导体显示技术有限公司   IPC: H01L27/146 Abstract: 本申请公开了一种阵列基板及其制作方法、显示面板。所述方法包括步骤:提供一衬底基板;在所述衬底基板上形成一第一金属层;在所述第一金属层上形成一栅极绝缘层;在所述栅极绝缘层形成一有源层;以及在所述有源层上形成一第二金属层;其中所述有源层包括依次层叠设置的第一器件层和第二器件层,所述第二器件层的材料为二维纳米材料,所述第二器件层具有宽光谱感应性。本申请利用喷墨打印的方法将二维纳米材料构建为光敏膜层,并且通过调节纳米材料的组成,以构建出具有高增益的光电膜层,再与高迁移率膜层进行结合,从而构建出具有迁移率较高且宽光谱光响应的显示设备。
74
CN109411335B
一种像素结构及其制作方法
Grant
Publication/Patent Number: CN109411335B Publication Date: 2021-01-19 Application Number: 201811203556.5 Filing Date: 2018-10-16 Inventor: 金利波   朱翀煜   岳欢   Assignee: 上海奕瑞光电子科技股份有限公司   IPC: H01L21/027 Abstract: 本发明提供一种像素结构及其制作方法,该方法包括:于基板上形成第一金属层和N型重掺杂层;基于第一掩膜板对上述两层进行刻蚀,形成数据线、漏极、源极和底电极;之后形成有源材料层,基于第二掩膜板对有源材料层和N型重掺杂层进行刻蚀,形成第一接触区、第二接触区及N型区,同时形成有源区和本征区;之后形成P型重掺杂层和顶电极材料层,基于第三掩膜板对上述两层进行刻蚀,形成P型区和顶电极;之后形成绝缘层,基于第四掩膜板对其进行刻蚀,形成暴露出顶电极的过孔;之后形成第二金属层,基于第五掩膜板对其进行刻蚀,形成栅电极、公共电极和扫描线。通过本发明解决了现有制作方法中因光刻次数较多导致生产成本较高的问题。
75
CN112218010A
图像传感器及捕获数字电子图像的方法
Public
Publication/Patent Number: CN112218010A Publication Date: 2021-01-12 Application Number: 202010585040.2 Filing Date: 2020-06-24 Inventor: 马渕圭司   真鍋宗平   林赛·格兰特   Assignee: 豪威科技股份有限公司   IPC: H04N5/361 Abstract: 一种图像传感器具有像素阵列,每个像素具有相关联的快门晶体管,快门晶体管被耦接以将取决于像素的曝光的电荷转移到图像存储电容器上,图像存储电容器被配置为被读取到模数转换器中。快门晶体管是N阱中的P型晶体管,阱保持在模拟电源电压处以降低像素对暗电流的灵敏度;在可替换的实施例中,快门晶体管是P型阱中的N型晶体管,阱保持在模拟接地电压处。
76
US10886314B2
Radiation detector
Publication/Patent Number: US10886314B2 Publication Date: 2021-01-05 Application Number: 16/441,842 Filing Date: 2019-06-14 Inventor: Shiota, Masahiro   Taguchi, Shigenari   Shindoh, Takahiro   Iizuka, Kunihiko   Ashida, Nobuyuki   Assignee: SHARP KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: [Object] To achieve a high-sensitivity radiation detector. [Solution] An amplifying transistor (3) is configured such that a photodiode (1) receives light with the amplifying transistor (3) conductive.
77
US10886325B2
Infrared detector devices and focal plane arrays having a transparent common ground structure and methods of fabricating the same
Publication/Patent Number: US10886325B2 Publication Date: 2021-01-05 Application Number: 15/971,217 Filing Date: 2018-05-04 Inventor: Wei, Yajun   Allen, Steven   Garter, Michael   Greiner, Mark   Forrai, David   Endres, Darrel   Jones, Robert   Assignee: L3 CINCINNATI ELECTRONICS CORPORATION   IPC: H01L27/146 Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.
78
CN112218014A
图像传感器和包括图像传感器的成像系统
Public
Publication/Patent Number: CN112218014A Publication Date: 2021-01-12 Application Number: 202010543690.0 Filing Date: 2020-06-15 Inventor: W·j·欣特   A·w·m·科尔图斯   Assignee: 泰拉丁达萨有限公司   IPC: H04N5/378 Abstract: 本发明涉及图像传感器并且涉及包括图像传感器的成像系统。本发明尤其涉及X射线图像传感器和成像系统。根据本发明的图像传感器包括像素阵列,所述像素阵列包含布置在行和列的矩阵中的多个有源像素,以及多个列线,出于输出像素信号的目的相同列中的像素的输出耦合到所述列线。所述图像传感器进一步包括读出电路系统,所述读出电路系统包含多个读出单元,每个读出单元经配置以用于通过所述读出单元的输入节点读出相应的列线。所述图像传感器的特征在于所述图像传感器进一步包括电容单元,例如电容器,以用于将每个输入节点电容式耦合到其对应的列线。