Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
81
US10886323B2
Infrared detector, infrared detection device, and method of manufacturing infrared detector
Publication/Patent Number: US10886323B2 Publication Date: 2021-01-05 Application Number: 16/438,521 Filing Date: 2019-06-12 Inventor: Okumura, Shigekazu   Assignee: FUJITSU LIMITED   IPC: H01L27/146 Abstract: An infrared detector includes a pixel separation wall. The infrared detector includes a semiconductor crystal substrate; a first contact layer formed on the semiconductor crystal substrate, a pixel separation wall formed on the first contact layer and configured to separate pixels; a buffer layer formed on the first contact layer and on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall, an infrared-absorbing layer formed on the buffer layer, a second contact layer formed on the infrared-absorbing layer, an upper electrode formed on the second contact layer, and a lower electrode formed on the first contact layer. The buffer layer and the first contact layer are formed of a compound semiconductor of a first conductivity type. The pixel separation wall and the second contact layer are formed of a compound semiconductor of a second conductivity type.
82
US10886311B2
Photo-detecting apparatus
Publication/Patent Number: US10886311B2 Publication Date: 2021-01-05 Application Number: 16/378,525 Filing Date: 2019-04-08 Inventor: Chen, Chien-yu   Na, Yun-chung   Cheng, Szu-lin   Yang, Ming-jay   Liu, Han-din   Liang, Che-fu   Assignee: Artilux, Inc.   IPC: H01L31/0232 Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.
83
CN112230797A
显示面板及显示装置
Public
Publication/Patent Number: CN112230797A Publication Date: 2021-01-15 Application Number: 202011091555.3 Filing Date: 2020-10-13 Inventor: 查宝   江淼   姚江波   张鑫   Assignee: 深圳市华星光电半导体显示技术有限公司   IPC: G06F3/041 Abstract: 本申请公开了一种显示面板及显示装置,显示面板包括显示屏体以及设置于所述显示屏体上的感应层,所述感应层包括多个相间隔的集成感应单元,每一所述集成感应单元包括至少一个触控器件以及至少一个光控器件。通过在显示面板中同时集成触控器件和光控器件,需要通过触控操作对显示面板进行近距离操作,并可以通过光控操作对显示面板进行远距离操作,显示面板同时具备有触控功能和光控功能,可以同时满足客户所需的触控和光控功能,并且第一扫描线和第二扫描线的扫描方式是采用分行交替扫描的方式,即触控和光控分行交替扫描,触控操作和光控操作可以单独进行,从而可以避免触控电极与感光传感器的信号串扰。
84
CN112204745A
固态摄像装置、制造固态摄像装置的方法和电子设备
Public
Publication/Patent Number: CN112204745A Publication Date: 2021-01-08 Application Number: 201980036312.9 Filing Date: 2019-06-03 Inventor: 安藤幸弘   Assignee: 索尼半导体解决方案公司   IPC: H01L27/146 Abstract: 本发明提供了能够抑制第一半导体基板和第二半导体基板的接合平面处的接合强度的变化的固态摄像装置。本发明提供的固态摄像装置包括:设置有多个第一导体的第一半导体基板;和接合到第一半导体基板并形成有多个第二导体的第二半导体基板。该固态摄像装置被构造为使得第一半导体基板和第二半导体基板之间的接合面具有:第一导体和第二导体彼此重叠的区域、形成在第一导体上的第一绝缘膜和第二导体彼此重叠的区域、形成在第二导体上的第二绝缘膜和第一导体彼此重叠的区域以及第一绝缘膜和第二绝缘膜彼此重叠的区域。该固态摄像装置还被构造为使得在第一半导体基板和第二半导体基板的接合前后,第一绝缘膜和第二绝缘膜的接合面积相对于第一半导体基板和第二半导体基板的接合面积的比例是恒定的。
85
CN107615752B
摄像器件和摄像设备
Grant
Publication/Patent Number: CN107615752B Publication Date: 2021-01-12 Application Number: 201680031420.3 Filing Date: 2016-05-25 Inventor: 元长优作   Assignee: 佳能株式会社   IPC: H04N5/355 Abstract: 进行根据在摄像器件内利用不同的曝光所拍摄的多个图像来生成一个图像的HDR图像生成处理,使得可以改善电力消耗的增加和帧频降低。
86
CN112201665A
光学传感器和利用光学传感器的方法
Public
Publication/Patent Number: CN112201665A Publication Date: 2021-01-08 Application Number: 202011072492.7 Filing Date: 2014-09-28 Inventor: 李龙燮   林大湖   Assignee: 美格纳半导体有限公司   IPC: H01L27/144 Abstract: 提供了一种光学传感器和利用光学传感器的方法。光学传感器包括:第一光电二极管,仅可见光滤波器布置在第一光电二极管上;第二光电二极管,仅红外阻挡滤波器布置在第二光电二极管上;以及第三光电二极管,第三光电二极管不具有任何滤波器,其中,光学传感器在通过第二光电二极管和第三光电二极管分别测量的第二测量值和第三测量值之间执行第一差集运算以测量物体的距离,并在第一差集运算的结果和通过第一光电二极管测量的第一测量值之间执行第二差集运算以测量特定波长的照度,其中,第一光电二极管至第三光电二极管彼此分开,其中,布置在第一光电二极管上的可见光滤波器和布置在第二光电二极管上的红外阻挡滤波器彼此分开预定距离。
87
CN112201666A
固体摄像器件和电子装置
Public
Publication/Patent Number: CN112201666A Publication Date: 2021-01-08 Application Number: 202010927549.0 Filing Date: 2015-12-11 Inventor: 渡部泰一郎   中村良助   佐藤友亮   古闲史彦   Assignee: 索尼公司   IPC: H01L27/146 Abstract: 本发明涉及固体摄像器件和电子装置。其中,所述固体摄像器件在半导体基板内的受光面侧处可包括:电荷保持部,所述电荷保持部响应于入射光而产生电荷并保持所述电荷;溢出沟道部,在所述电荷保持部处达到饱和的所述电荷被排放到所述溢出沟道部中;势垒部,所述势垒部成为从所述电荷保持部向所述溢出沟道部流动的所述电荷的壁垒,以及第一垂直晶体管,所述第一垂直晶体管从所述半导体基板的与所述受光面相反的表面被形成,并且从所述电荷保持部读取所述电荷。
88
CN108702474B
光电转换设备
Grant
Publication/Patent Number: CN108702474B Publication Date: 2021-01-12 Application Number: 201780015353.0 Filing Date: 2017-01-24 Inventor: 三好祐弥   管野透   Assignee: 株式会社理光   IPC: H04N5/3745 Abstract: 本发明实现了光电转换设备,其能够减小横向方向的尺寸。提供了具有宽矩形形状的光电转换设备(1),其中,光电转换设备(1)提供有:像素块(10),其中布置多个像素;多个信号处理块(20),用于处理从像素块输出的信号;电源电压供应块(30),用于供应电源电压到像素块和多个信号处理块;以及电极焊盘(40),连接到电源电压供应块;并且多个像素(11)的每个被提供有电荷‑电压转换单元(FD),其包括:光电转换元件,用于根据入射光执行光电转换;以及放大器,用于将光电转换的电荷转换为电压。在像素块中,每规定数量的像素被设置为一列(PU),其是一批信号处理单元,多个列在光电转换设备的纵上方向上平行地布置,提供多个垂直电力馈送线(VL),其使得从电源电压供应块输出的电源电压能够从横向方向被馈送到像素块的多个列的每列,并且提供多个水平电力馈送线(HL),其使得从电源电压供应块输出的电源电压能够从纵向方向馈送到像素块和多个信号处理块,垂直电力馈送线和水平电力馈送线连接。
89
US10887536B2
Image sensor with reduced noise
Publication/Patent Number: US10887536B2 Publication Date: 2021-01-05 Application Number: 16/115,987 Filing Date: 2018-08-29 Inventor: Lim, Jung Wook   Shim, Eun Sub   Lee, Kyung Ho   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H04N5/225 Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.
90
US10886322B2
Multi-spectral sensor with stacked photodetectors
Publication/Patent Number: US10886322B2 Publication Date: 2021-01-05 Application Number: 16/470,515 Filing Date: 2017-12-18 Inventor: Ben, Chouikha Mohamed   Dubois, Gérard   Assignee: SORBONNE UNIVERSITÉ   IPC: H01L31/00 Abstract: A multi-spectral photodetector is provided, comprising: a plurality of N photodetectors where N is an integer such that N≥2, each photodetector comprising an anode and a cathode separated from one another by a region of interest, all produced in a semiconductor material; at least one electrical contact for all of the N anodes; and an electrical contact associated with each of the N cathodes; said photodetectors being stacked on top of one another such that the anodes and the cathodes and finally the regions of interest of two consecutive photodetectors in the stack are arranged face to face, this stack making it possible to define a face, termed the active face of the multi-spectral photodetector, common to all the photodetectors of the stack, defined by the face of the first region of interest of the first photodetector of the stack via which photons are intended to enter the stack.
91
US10886249B2
Hybrid wafer-to-wafer bonding and methods of surface preparation for wafers comprising an aluminum metalization
Publication/Patent Number: US10886249B2 Publication Date: 2021-01-05 Application Number: 15/966,206 Filing Date: 2018-04-30 Inventor: Hofrichter, Jens   Assignee: ams International AG   IPC: H01L21/46 Abstract: A surface treatment solution includes a fluoride source; a first solvent; and a water transforming agent to transform water produced during wafer surface treatment into a second solvent, which can be the same as, or different from, the first solvent. The solution can be used, for example, in surface preparation for wafers having a backend including an electrical interconnect that includes aluminum or an aluminum alloy.
92
US2021005716A1
SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS
Publication/Patent Number: US2021005716A1 Publication Date: 2021-01-07 Application Number: 16/947,294 Filing Date: 2020-07-27 Inventor: Rao, G.r. Mohan   Assignee: GREENTHREAD, LLC   IPC: H01L29/10 Abstract: Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICs, improvement in refresh time for DRAMs, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFETs, and a host of other applications.
93
CN112204109A
近红外线吸收色素、滤光片和成像装置
Public
Publication/Patent Number: CN112204109A Publication Date: 2021-01-08 Application Number: 201980035872.2 Filing Date: 2019-05-27 Inventor: 服部繁树   吉冈翔太   Assignee: AGC株式会社   IPC: C09B57/00 Abstract: 本发明涉及包含由式(A)表示的化合物的近红外线吸收色素。式(A)中,R~R各自独立地为氢原子、卤素原子、羟基、烷基、芳基或芳烷基。R和R、R和R、以及R和R中的各对可以相互连接而形成环。R和R各自独立地为烷基或芳烷基。R和R可以连接并与氮原子一起形成5元~10元的杂环。
94
CN108605106B
固体摄像装置以及摄像装置
Grant Assignment
Publication/Patent Number: CN108605106B Publication Date: 2021-01-12 Application Number: 201780010999.X Filing Date: 2017-02-13 Inventor: 生熊诚   室岛孝广   鬼头崇泰   纲川裕之   阿部哲也   Assignee: 松下半导体解决方案株式会社   IPC: H04N5/357 Abstract: 固体摄像装置(1)具备:像素阵列部(10),多个像素(3)被设置为矩阵状;多个垂直信号线(19),按照每个像素列而被设置;列处理部(26a),由与多个垂直信号线(19)的每一个对应地设置的多个列AD电路(25)构成;电源变动检测部(26b),与向各像素(3)传递电源电压的电源线(51)连接,与像素行对应地检测由于电源电压的变动而引起的电源变动成分;以及电源变动校正部(70),利用由电源变动检测部(26b)检测出的电源变动成分,按每个像素行校正由列处理部(26a)检测的像素信号。
95
CN107040731B
摄像装置、模块、电子设备及摄像装置的工作方法
Grant
Publication/Patent Number: CN107040731B Publication Date: 2021-01-15 Application Number: 201610822120.9 Filing Date: 2016-09-13 Inventor: 王丸拓郎   楠本直人   Assignee: 株式会社半导体能源研究所   IPC: H04N5/359 Abstract: 提供一种可以在多个像素中共用晶体管的结构且以全局快门方式摄像的摄像装置。其中,在多个像素中共用使电荷检测部的电位复位的晶体管、进行对应于电荷检测部的电位的信号的输出的晶体管以及选择像素的晶体管,并且设置有节点AN(第一电荷保持部)、节点FD(第二电荷保持部)及节点FDX(电荷检测部),并且在节点AN中取得的摄像数据被转送到节点FD,并且该摄像数据从节点FD依次被转送到节点FDX并被读出。