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Application Number Application Number |
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Inventor Inventor | Assignee Assignee |
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101 | CN112204446A |
成像装置
Public
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Publication/Patent Number: CN112204446A | Publication Date: 2021-01-08 | Application Number: 201980036840.4 | Filing Date: 2019-05-24 | Inventor： 新屋公启 山本笃志 | Assignee: 索尼半导体解决方案公司 | IPC: G02B13/00 | Abstract: 本公开涉及一种成像装置，其能够实现装置构成的小型化和高度减小，同时减少眩光或重影的发生，并且能够防止AR涂层中的裂纹的发生。根据本公开，在固态成像元件上形成的透镜的至少有效区域形成AR涂层。除了有效区域以外，还可以在透镜的外周部和玻璃基板的上表面上形成AR涂层；在这种情况下，透镜的外周部的至少一部分和玻璃基板的上表面的至少一部分未被AR涂层覆盖。本公开适用于成像装置。 | |||
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102 | CN111463299B |
基于氧化镓日盲紫外偏振光的直接探测器及偏振成像装置
Grant
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Publication/Patent Number: CN111463299B | Publication Date: 2021-01-05 | Application Number: 202010309213.8 | Filing Date: 2020-04-17 | Inventor： 魏钟鸣 赵凯 杨珏晗 文宏玉 | Assignee: 中国科学院半导体研究所 | IPC: H01L31/032 | Abstract: 一种基于氧化镓日盲紫外偏振光的直接探测器、其制备方法及偏振成像装置，该直接探测器包括IC插座台面，其上设有IC插座针脚；硅片，其设置在IC插座台面上，其上附有二氧化硅层；以及源电极、漏电极和半导体层，均设置在硅片的二氧化硅层上，半导体层位于源电极和漏电极之间，源电极和漏电极分别通过引线与IC插座针脚连接。本发明提供的基于宽禁带半导体氧化镓的日盲区紫外偏振光直接成像，其像元为纳米级的纳米带且氧化镓的光响应时间为微秒级别，可实现高分辨且快速的扫描目标。 | |||
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103 | US10887539B2 |
Imaging device
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Publication/Patent Number: US10887539B2 | Publication Date: 2021-01-05 | Application Number: 16/700,957 | Filing Date: 2019-12-02 | Inventor： Kanehara, Hidenari Miyake, Yasuo Shishido, Sanshiro | Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. | IPC: H04N3/14 | Abstract: An imaging device includes: a first chip that includes pixels arranged in a row, the pixels including: a first pixel including a first photoelectric converter and a first transistor, having a first control terminal, coupled to the first photoelectric converter; and a second pixel including a second photoelectric converter and a second transistor, having a second control terminal, coupled to the second photoelectric converter; and a second chip including: a signal line extending along the row; a first buffer circuit having a first input terminal and a first output terminal, the first input terminal being coupled to the signal line, the first output terminal being coupled to the first control terminal; and a second buffer circuit having a second input terminal and a second output terminal, the second input terminal being coupled to the signal line, the second output terminal being coupled to the second control terminal. | |||
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104 | US10886313B2 |
Solid-state imaging element and solid-state imaging apparatus
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Publication/Patent Number: US10886313B2 | Publication Date: 2021-01-05 | Application Number: 16/327,248 | Filing Date: 2017-07-31 | Inventor： Matsuo, Hiroaki | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H04N5/374 | Abstract: A solid-state imaging element includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode. The first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween. | |||
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105 | US10884126B2 |
Accurate photo detector measurements for LIDAR
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Publication/Patent Number: US10884126B2 | Publication Date: 2021-01-05 | Application Number: 15/909,628 | Filing Date: 2018-03-01 | Inventor： Shu, Marvin Pacala, Angus Frichtl, Mark | Assignee: Ouster, Inc. | IPC: G01C3/08 | Abstract: A light ranging system can include a laser device and an imaging device having photosensors. The laser device illuminates a scene with laser pulse radiation that reflects off of objects in the scene. The reflections can vary greatly depending on the reflecting surface shape and reflectivity. The signal measured by photosensors can be filtered with a number of matched filter designed according to profiles of different reflected signals. A best matched filter can be identified, and hence information about the reflecting surface and accurate ranging information can be obtained. The laser pulse radiation can be emitted in coded pulses by allowing weights to different detection intervals. Other enhancements include staggering laser pulses and changing an operational status of photodetectors of a pixel sensor, as well as efficient signal processing using a sensor chip that includes processing circuits and photosensors. | |||
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106 | CN112236686A |
光探测装置
Public
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Publication/Patent Number: CN112236686A | Publication Date: 2021-01-15 | Application Number: 201980038133.9 | Filing Date: 2019-04-08 | Inventor： 陈建宇 那允中 郑斯璘 杨闵杰 刘汉鼎 梁哲夫 | Assignee: 奥特逻科公司 | IPC: G01S17/00 | Abstract: 一种光探测装置，包括吸收层，该吸收层被配置为吸收光子并从吸收的光子产生光载流子，其中，该吸收层包括锗。载流子引导单元电耦合到吸收层，其中，载流子引导单元包括具有第一栅极端子的第一开关。 | |||
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107 | CN112219274A |
半导体装置和半导体装置的制造方法
Public
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Publication/Patent Number: CN112219274A | Publication Date: 2021-01-12 | Application Number: 201980037069.2 | Filing Date: 2019-06-13 | Inventor： 羽根田雅希 | Assignee: 索尼半导体解决方案公司 | IPC: H01L21/768 | Abstract: 提供了一种进一步减小以任意布局配置的配线的配线间电容的半导体装置。半导体装置(1)设置有：第一配线间绝缘层(120)，其设置在基板(100)上，并在与基板相反的一侧具有凹部；第一配线层(130)，其设置在第一配线间绝缘层的凹部的内部；密封膜(140)，其沿着第一配线层和第一配线间绝缘层的凹凸形状设置；第二配线间绝缘层(220)，其以覆盖凹部的方式设置在第一配线间绝缘层上，并且具有与凹部相对的平坦表面；以及空隙(150)，其设置在第二配线间绝缘层和第一配线层与第一配线间绝缘层之间。 | |||
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108 | US10886309B2 |
High-speed light sensing apparatus II
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Publication/Patent Number: US10886309B2 | Publication Date: 2021-01-05 | Application Number: 15/908,447 | Filing Date: 2018-02-28 | Inventor： Na, Yun-chung Liang, Che-fu Cheng, Szu-lin Chen, Shu-lu Chu, Kuan-chen Lin, Chung-chih Liu, Han-din | Assignee: Artilux, Inc. | IPC: G01C3/08 | Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal. | |||
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109 | US10886312B2 |
High-speed light sensing apparatus II
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Publication/Patent Number: US10886312B2 | Publication Date: 2021-01-05 | Application Number: 16/656,963 | Filing Date: 2019-10-18 | Inventor： Na, Yun-chung Liang, Che-fu Cheng, Szu-lin Chen, Shu-lu Chu, Kuan-chen Lin, Chung-chih Liu, Han-din | Assignee: Artilux, Inc. | IPC: G01C3/00 | Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal. | |||
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110 | US10885296B2 |
Electronic device and fingerprint sensing method
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Publication/Patent Number: US10885296B2 | Publication Date: 2021-01-05 | Application Number: 16/261,594 | Filing Date: 2019-01-30 | Inventor： Fu, Hsu-wen Yin, Ping-hung Wang, Jia-shyang Lee, Chun-yu | Assignee: Guangzhou Tyrafos Semiconductor Technologies Co., LTD | IPC: G06K9/00 | Abstract: An electronic device and a fingerprint sensing method are provided. The electronic device includes a display panel, a fingerprint sensor, and an integrated driver chip. The display panel includes a plurality of pixel units arranged in an array. The integrated driver chip integrates a display driver circuit and a fingerprint sensing circuit. When the pixel units of the display panel are in an undriven state and a finger object is in contact with a sensing area of the display panel to perform a fingerprint unlock operation, the display driver circuit drives at least a portion of the pixel units corresponding to the sensing area, so that at least a portion of the pixel units provide illumination light to the sensing area. The fingerprint sensing circuit drives the fingerprint sensor to capture a fingerprint feature image of the finger object. | |||
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111 | US10886317B2 |
Fabrication of optical metasurfaces
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Publication/Patent Number: US10886317B2 | Publication Date: 2021-01-05 | Application Number: 16/841,413 | Filing Date: 2020-04-06 | Inventor： Akselrod, Gleb M. Josberger, Erik E. Weidman, Mark C. | Assignee: Elwha LLC | IPC: H01L27/146 | Abstract: The method is provided for fabricating an optical metasurface. The method may include depositing a conductive layer over a holographic region of a wafer and depositing a dielectric layer over the conducting layer. The method may also include patterning a hard mask on the dielectric layer. The method may further include etching the dielectric layer to form a plurality of dielectric pillars with a plurality of nano-scale gaps between the pillars. | |||
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112 | US10665626B2 |
High dynamic range image sensors
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Publication/Patent Number: US10665626B2 | Publication Date: 2020-05-26 | Application Number: 15/962,943 | Filing Date: 2018-04-25 | Inventor： Zhao, Cheng Lu, Chen-wei Lin, Zhiqiang Tai, Dyson Hsin-chih | Assignee: OmniVision Technologies, Inc. | IPC: H01L27/146 | Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens. | |||
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113 | US10700115B2 |
Image sensors
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Publication/Patent Number: US10700115B2 | Publication Date: 2020-06-30 | Application Number: 16/248,202 | Filing Date: 2019-01-15 | Inventor： Choi, Hyuk Soon Yun, Jung Bin Ahn, Jungchak | Assignee: SAMSUNG ELECTRONICS CO., LTD. | IPC: H01L27/146 | Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes. |
