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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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Inventor Inventor Assignee Assignee IPC IPC
141
US2020027912A1
IMAGE SENSORS
Publication/Patent Number: US2020027912A1 Publication Date: 2020-01-23 Application Number: 16/587,944 Filing Date: 2019-09-30 Inventor: Kim, Bum Suk   Park, Jong Hoon   Moon, Chang Rok   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L27/146 Abstract: An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.
142
US2020043969A1
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Publication/Patent Number: US2020043969A1 Publication Date: 2020-02-06 Application Number: 16/394,443 Filing Date: 2019-04-25 Inventor: Guan, Bin   Kaneko, Kishou   Chen, Shijie   Huang, Xiaolu   Assignee: HUAIAN IMAGING DEVICE MANUFACTURER CORPORATION   IPC: H01L27/146 Abstract: A method of manufacturing a semiconductor device comprises: providing a stacked structure comprising a first wafer that includes a first substrate, a first insulating layer and a first electrical connector and a second wafer that includes a second substrate, a second insulating layer and a second electrical connector; forming a first portion of a TSV which overlaps at least part of the first and second electrical connectors and exposes a part of a surface of the first insulating layer; forming an insulating film that at least covers side surfaces and a bottom surface of the first portion; forming a first conductive barrier film retained on the side surfaces of the first portion; forming a second portion of the TSV that exposes the first and second electrical connectors; forming a conductive plug in the first and second portions, to interconnect the first and second electrical connectors.
143
US2020066769A1
IMAGE CAPTURING DEVICE AND CAMERA
Publication/Patent Number: US2020066769A1 Publication Date: 2020-02-27 Application Number: 16/537,756 Filing Date: 2019-08-12 Inventor: Kurihara, Masaki   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An image capturing device is provided. The device includes a substrate comprising a pixel region, a peripheral region and a trench region, in which trenches are formed, between the pixel region and the peripheral region. The plurality of trenches include first trenches arranged to be spaced apart from each other in a first direction along a first side of an outer edge of the pixel region and second trenches arranged to be spaced apart from each other in the first direction. The first and second trenches are arranged to be spaced apart from each other in a second direction crossing the first direction. The first and second trenches are arranged so that, any straight line path which connects, without overlapping any one of the first and second trenches, the first side and the peripheral region, does not exist.
144
US2020098817A1
SOLID-STATE STREAK CAMERA
Publication/Patent Number: US2020098817A1 Publication Date: 2020-03-26 Application Number: 16/138,890 Filing Date: 2018-09-21 Inventor: Opachich, Yekaterina   Porter, Jr. John Larry   Macneil, Lawrence   Assignee: Mission Support and Test Services, LLC   IPC: H01L27/146 Abstract: A solid-state streak camera having photodetectors configured to receive energy from an event and convert the energy to an electrical signal. The electrical signal is presented on a conductive path that has two or more capacitors spaced along the conductive path, the capacitors configure to accept and hold capacitor charge. The capacitor charge represents the energy from the event received by the photodetectors and the location of the capacitors along the conductive path correlates to time of the receipt of the energy on the photodetector. Analog to digital converters convert the capacitor charge to digital values and a memory stores the digital values as data associated with the photodetector that generated the data. Reliable and constant results or obtained and high resolution may be obtained with a two-dimensional photodetector array.
145
US2020098811A1
CHIP PACKAGE AND METHOD FOR FORMING THE SAME
Publication/Patent Number: US2020098811A1 Publication Date: 2020-03-26 Application Number: 16/581,594 Filing Date: 2019-09-24 Inventor: Chen, Kuei-wei   Cheng, Chia-ming   Lin, Chia-sheng   Assignee: XINTEC INC.   IPC: H01L27/146 Abstract: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.
146
US2020075660A1
SOLID-STATE IMAGE PICKUP DEVICE
Publication/Patent Number: US2020075660A1 Publication Date: 2020-03-05 Application Number: 16/674,205 Filing Date: 2019-11-05 Inventor: Koyama, Yusaku   Aoki, Jun   Assignee: OLYMPUS CORPORATION   IPC: H01L27/146 Abstract: A solid-state image pickup device is provided with a two-dimensional pixel array wherein unit pixels are arrayed on a semiconductor substrate, the unit pixels respectively including photoelectric conversion elements configured to convert inputted light into electric signals, and circuit elements configured to read out the electric signals thus converted. The unit pixels are formed in at least one shared well region surrounded by an insulating element isolation region that penetrates the semiconductor substrate from the front surface to the rear surface and isolates the elements from each other. Each shared well region is biased to a predetermined potential via well contact sections of a number that is smaller than that of the unit pixels.
147
US2020091206A1
SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT
Publication/Patent Number: US2020091206A1 Publication Date: 2020-03-19 Application Number: 16/688,534 Filing Date: 2019-11-19 Inventor: Hiyama, Susumu   Watanabe, Kazufumi   Assignee: Sony Corporation   IPC: H01L27/146 Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
148
US2020091211A1
Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters
Publication/Patent Number: US2020091211A1 Publication Date: 2020-03-19 Application Number: 16/693,651 Filing Date: 2019-11-25 Inventor: Chen, Chiu-jung   Chou, Chun-hao   Chen, Hsin-chi   Lee, Kuo-cheng   Chien, Volume   Hsu, Yung-lung   Cheng, Yun-wei   Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.   IPC: H01L27/146 Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
149
CN108695348B
芯片级图像传感器封装及相关制造方法
Grant
Publication/Patent Number: CN108695348B Publication Date: 2020-11-20 Application Number: 201810209734.9 Filing Date: 2018-03-14 Inventor: 蔡陈纬   范纯圣   林蔚峰   Assignee: 豪威科技股份有限公司   IPC: H01L27/146 Abstract: 芯片级图像传感器封装包括半导体衬底、透明衬底、薄膜和多个导电焊盘。半导体衬底具有(i)像素阵列和(ii)围绕像素阵列的外围区域。透明衬底覆盖像素阵列,具有靠近像素阵列的底部衬底表面和与底部衬底表面相对的顶部衬底表面。薄膜位于(i)全部像素阵列和(ii)与像素阵列相邻的外围区域的一部分两者的正上方的顶部衬底表面的区域上。多个导电焊盘中的每一个位于外围区域内并且电连接到像素阵列。多个导电焊盘中的每一个的一部分不是位于薄膜的正下方。
150
CN111697018A
一种背照式图像传感器及其制备方法
Substantial Examination
Publication/Patent Number: CN111697018A Publication Date: 2020-09-22 Application Number: 202010790255.8 Filing Date: 2020-08-07 Inventor: 吴永芬   Assignee: 吴永芬   IPC: H01L27/146 Abstract: 本发明涉及一种背照式图像传感器及其制备方法,该方法包括以下步骤:提供一半导体衬底,在所述半导体衬底内具有多个间隔设置像素器件,接着在所述半导体衬底的所述第一表面上形成重布线层,接着从所述半导体衬底的第二表面进行减薄处理并形成减反射薄膜,接着形成栅格结构,接着依次形成第一金属网格、第一滤光层、第二金属网格、第二滤光层、第三金属网格以及第三滤光层,接着在所述第三滤光层上形成透镜结构。
151
US10847558B2
Solid-state imaging apparatus and method for manufacturing the solid-state imaging apparatus having sealing portion disposed in bonded members
Publication/Patent Number: US10847558B2 Publication Date: 2020-11-24 Application Number: 15/956,504 Filing Date: 2018-04-18 Inventor: Kobayashi, Masahiro   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: A solid-state imaging apparatus includes a first substrate that includes a plurality of photoelectric conversion units, a second substrate that includes at least a part of a readout circuit configured to read signals based on electric charges of the plurality of photoelectric conversion units and a peripheral circuit including a control circuit, and a wiring structure that is disposed between the first substrate and the second substrate and includes a pad portion electrically connected to the peripheral circuit via a draw-out wiring and an insulating layer. The wiring structure has, at least at a part thereof, a seal ring disposed in such a way as to surround the photoelectric conversion units and the peripheral circuit.
152
US10847565B2
Back side illumination image sensors having an infrared filter
Publication/Patent Number: US10847565B2 Publication Date: 2020-11-24 Application Number: 16/433,515 Filing Date: 2019-06-06 Inventor: Lee, Yun Ki   Park, Jong Hoon   Park, Jun Sung   Assignee: Samsung Electronics Co., Ltd.   IPC: H01L27/146 Abstract: Back side illumination (BSI) image sensors are provided. A BSI image sensor includes a substrate and a plurality of pixels configured to generate electrical signals responsive to light incident on the substrate. Each of the plurality of pixels includes a photodiode, an infrared radiation (IR) cut-off filter above the photodiode, a light shield pattern above the photodiode and including an opening corresponding to an area of 1 to 15% of each of the plurality of pixels, a planarization layer on the light shield pattern, and a lens on the planarization layer.
153
CN111430395A
一种CMOS图像传感器结构及制作方法
Substantial Examination
Publication/Patent Number: CN111430395A Publication Date: 2020-07-17 Application Number: 202010339537.6 Filing Date: 2020-04-26 Inventor: 顾学强   Assignee: 上海微阱电子科技有限公司   IPC: H01L27/146 Abstract: 本发明公开了一种CMOS图像传感器结构,包括:位于硅衬底上的像素单元阵列区域和位于像素单元阵列区域周围的外围电路区域,硅衬底中设有埋氧层,埋氧层分为位于像素单元阵列区域的第一埋氧层和位于外围电路区域的第二埋氧层,像素单元阵列区域的硅衬底正面上设有像素单元的感光部和悬浮漏极,外围电路区域的硅衬底正面上设有外围电路,感光部穿过第一埋氧层设置,悬浮漏极设于第一埋氧层面向硅衬底正面的一侧位置,外围电路设于第二埋氧层面向硅衬底正面的一侧位置。本发明能够减小寄生电容,提升像素单元的量子效率和防止光学串扰。本发明还公开了一种CMOS图像传感器结构制作方法。
154
CN111952328A
CMOS图像传感器的制作方法
Substantial Examination
Publication/Patent Number: CN111952328A Publication Date: 2020-11-17 Application Number: 202011024012.X Filing Date: 2020-09-25 Inventor: 梅翠玉   王明   徐炯   Assignee: 上海华力微电子有限公司   IPC: H01L27/146 Abstract: 本发明提供了一种CMOS图像传感器的制作方法。所述制作方法包括提供覆盖有垫氧化层的半导体基底,半导体基底中设置有隔离区以及由所述隔离区限定出的光电二极管形成区,首先在半导体基底上形成硬掩膜层,再在硬掩膜层上形成图形化的光阻层,光阻层露出部分位于隔离区上的硬掩膜层,然后刻蚀硬掩膜层以露出垫氧化层的上表面,接着执行离子注入,在隔离区上形成离子注入区。由于在执行离子注入工艺时,采用硬掩膜层来保护非离子注入区的半导体基底,从而光阻层的厚度可以设置得较薄以制作出较小的开窗,以控制相邻两个光电二极管之间的隔离区的尺寸,提高CMOS图像传感器的性能。
155
CN105895648B
具有金属屏蔽层的集成电路和图像感测器件以及相关制造方法
Grant
Publication/Patent Number: CN105895648B Publication Date: 2020-08-11 Application Number: 201610087672.X Filing Date: 2016-02-16 Inventor: 蔡宗翰   郑允玮   周俊豪   李国政   许永隆   陈信吉   Assignee: 台湾积体电路制造股份有限公司   IPC: H01L27/146 Abstract: 一种集成电路包括第一半导体器件、第二半导体器件和金属屏蔽层。第一半导体器件包括第一衬底和第一多层结构,第一衬底支持第一多层结构。第二半导体器件包括第二衬底和第二多层结构,第二衬底支持第二多层结构。金属屏蔽层设置在第一多层结构和第二多层结构之间,其中,金属屏蔽层电连接至第二半导体器件。本发明还提供了具有金属屏蔽层的集成电路和图像感测器件以及相关制造方法。
156
CN106206626B
弯曲图像传感器、其制备方法及具有弯曲图像传感器的电子器件
Grant
Publication/Patent Number: CN106206626B Publication Date: 2020-10-30 Application Number: 201510329663.2 Filing Date: 2015-06-15 Inventor: 金相植   Assignee: 爱思开海力士有限公司   IPC: H01L27/146 Abstract: 公开了一种弯曲图像传感器。该弯曲图像传感器包括:支撑衬底;设置于所述支撑衬底上的粘合图案;设置于所述支撑衬底上并与所述粘合图案接触、且具有接收入射光的弯曲表面的感测衬底;以及设置于所述支撑衬底上并包围所述感测衬底的外围的固定图案。
157
CN106847838B
包括垂直传输门的图像传感器
Grant
Publication/Patent Number: CN106847838B Publication Date: 2020-10-16 Application Number: 201610280478.3 Filing Date: 2016-04-29 Inventor: 杨允熙   郭坪水   权永俊   罗民基   朴圣根   禹东铉   李次宁   李浩领   Assignee: 爱思开海力士有限公司   IPC: H01L27/146 Abstract: 一种图像传感器包括:光电转换元件,包括第一杂质区和第二杂质区,其中,第一杂质区接触衬底的第一表面,其中,第二杂质区具有与第一杂质区互补的导电性,并且形成在衬底内和在第一杂质区之下;柱体,形成在光电转换元件之上;传输门,形成在光电转换元件之上以包围柱体;以及通道层,形成在传输门和柱体之间,并且接触光电转换元件,其中,通道层接触第一杂质区,并且具有与第二杂质区相同的导电性。
158
CN111769129A
一种抗辐照粒子探测器
Substantial Examination
Publication/Patent Number: CN111769129A Publication Date: 2020-10-13 Application Number: 202010692997.7 Filing Date: 2020-07-17 Inventor: 张亮   王萌   董家宁   王安庆   李龙   Assignee: 山东大学   IPC: H01L27/146 Abstract: 本发明公开了一种抗辐照粒子探测器,具备四阱工艺,分别是N阱、P阱、深N阱和深P隔离层,像素单元和读出电路均在深度掺杂的P型衬底上制作。其中,深N阱和P型衬底用来产生P‑N灵敏二极管,深N阱上的N阱和N型有源区(N+)构成通路,通过金属线连接其他读出电路。深P隔离层用来隔离深N阱内的器件,避免了PMOS晶体管与灵敏二极管之间的电荷竞争,在深P隔离层内可同时制作PMOS和NMOS管,能够实现复杂CMOS电路,这有助于在像素内实现复杂电路,对像素信号进行放大和降噪处理。N阱和P型有源区(P+)用于制作PMOS晶体管,P阱和N型有源区(N+)用于制作NMOS管。
159
CN107403814B
光学传感器设备和用于制造光学传感器设备的方法
Grant
Publication/Patent Number: CN107403814B Publication Date: 2020-10-30 Application Number: 201710333692.5 Filing Date: 2017-05-12 Inventor: H.法伊克   Assignee: 英飞凌科技股份有限公司   IPC: H01L27/146 Abstract: 本发明公开光学传感器设备和用于制造光学传感器设备的方法。示出一种光学传感器设备,其包括用以将电磁信号转换成光生电荷载流子的转换区。光学传感器设备包括配置成读出光生电荷载流子的读出节点和通过隔离材料与转换区分离的控制电极。此外,光学传感器设备包括控制电极与转换区之间的半导体衬底中的掺杂区,其中掺杂区包括相比于转换区的最小掺杂浓度更高的掺杂浓度,其中掺杂浓度是转换区的最小掺杂浓度的至少1000倍,并且其中掺杂区延伸到半导体衬底中。此外,控制电极朝向转换区的投影与掺杂区重叠或位于掺杂区中。实施例将光学传感器设备示出为飞行时间传感器。
160
CN111916468A
图像传感器
Public
Publication/Patent Number: CN111916468A Publication Date: 2020-11-10 Application Number: 202010374637.2 Filing Date: 2020-05-06 Inventor: 沈殷燮   李景镐   Assignee: 三星电子株式会社   IPC: H01L27/146 Abstract: 提供了一种图像传感器。一种在包括低分辨率模式和高分辨率模式的多种分辨率模式下操作的图像传感器包括:包括多个像素的像素阵列,其中,所述多个像素中的每个像素包括:具有第一光电二极管的第一子像素和具有第二光电二极管的第二子像素,并且所述第一子像素和所述第二子像素相邻地设置,并且共享浮置扩散区。所述图像传感器还包括行驱动器,向所述像素阵列提供控制信号以控制自动聚焦(AF)功能的执行,使得所述AF功能的执行包括:在所述高分辨率模式下以像素为单位执行所述AF功能,在所述低分辨率模式下以像素组为单位执行所述AF功能。