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Application Number Application Number |
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1 | EP3776659A1 |
DISPLAY PANEL AND APPARATUS, AND FABRICATING METHOD THEREOF
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Publication/Patent Number: EP3776659A1 | Publication Date: 2021-02-17 | Application Number: 18880036.1 | Filing Date: 2018-03-29 | Inventor： Li, Xiaolong Zhang, Fangzhen Qin, Wei Peng, Kuanjun | Assignee: BOE Technology Group Co., Ltd. | IPC: H01L27/30 | ||||
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2 | US2021043689A1 |
IMAGING DEVICE AND IMAGING SYSTEM
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Publication/Patent Number: US2021043689A1 | Publication Date: 2021-02-11 | Application Number: 17/083,376 | Filing Date: 2020-10-29 | Inventor： Tokuhara, Takeyoshi Shishido, Sanshiro Miyake, Yasuo Machida, Shinichi | Assignee: Panasonic Intellectual Property Management Co., Ltd. | IPC: H01L27/30 | Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer. | |||
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3 | US2021020857A1 |
SOLID-STATE IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE
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Publication/Patent Number: US2021020857A1 | Publication Date: 2021-01-21 | Application Number: 16/979,992 | Filing Date: 2019-03-04 | Inventor： Hirata, Shintarou Togashi, Hideaki Kaneda, Yukio | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L51/42 | Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer. | |||
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4 | EP3772106A1 |
SENSORS AND ELECTRONIC DEVICES
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Publication/Patent Number: EP3772106A1 | Publication Date: 2021-02-03 | Application Number: 20169035.1 | Filing Date: 2020-04-09 | Inventor： Leem, Dong-seok Kim, Rae Sung Choi, Hyesung Kwon, Ohkyu Kim, Changki Kim, Hwang Suk Park, Bum Woo Lee, Jae Jun | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/30 | Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material. | |||
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5 | EP3394912B1 |
ORGANIC OPTOELECTRONIC DEVICE, ARRAY OF SUCH DEVICES AND METHOD FOR PRODUCING SUCH ARRAYS
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Publication/Patent Number: EP3394912B1 | Publication Date: 2021-02-17 | Application Number: 16812967.4 | Filing Date: 2016-12-21 | Inventor： Benwadih, Mohammed Charlot, Simon Laurent, Jean-yves Verilhac, Jean-marie Berthod, Emeline Rohr, Pierre | Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ISORG Trixell | IPC: H01L51/42 | ||||
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6 | EP3767697A1 |
PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGE PICKUP UNIT, AND ELECTRONIC APPARATUS
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Publication/Patent Number: EP3767697A1 | Publication Date: 2021-01-20 | Application Number: 20189329.4 | Filing Date: 2013-10-31 | Inventor： Udaka, Toru Murata, Masaki Enoki, Osamu Aonuma, Masayoshi Miyaji, Sae Ito, Takuya Sudou, Miki Morimoto, Rui Sasaki, Hiroto | Assignee: Sony Corporation | IPC: H01L51/42 | Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element (1). The photoelectric conversion element (1) includes a photoelectric conversion layer (13); and first and second electrodes (12, 14) provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors. | |||
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7 | US2021028235A1 |
IMAGE SENSOR INCLUDING NANOSTRUCTURE COLOR FILTER
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Publication/Patent Number: US2021028235A1 | Publication Date: 2021-01-28 | Application Number: 17/071,364 | Filing Date: 2020-10-15 | Inventor： Han, Seunghoon Lee, Kwanghee Jin, Yongwan Kim, Yongsung Shin, Changgyun Lee, Jeongyub Arbabi, Amir Faraon, Andrei Horie, Yu | Assignee: SAMSUNG ELECTRONICS CO., LTD. CALIFORNIA INSTITUTE OF TECHNOLOGY | IPC: H01L27/30 | Abstract: An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period. | |||
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8 | US2021020697A1 |
ORGANIC OPTOELECTRONIC DEVICE
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Publication/Patent Number: US2021020697A1 | Publication Date: 2021-01-21 | Application Number: 16/931,960 | Filing Date: 2020-07-17 | Inventor： Forrest, Stephen R. Che, Xiaozhou Li, Yongxi | Assignee: The Regents of the University of Michigan | IPC: H01L27/30 | Abstract: An organic optoelectronic device comprises a first electrode, a first infrared photovoltaic subcell positioned over the first electrode, a second infrared photovoltaic subcell positioned over the first near-infrared subcell, and a first visible photovoltaic subcell positioned over the second near-infrared subcell, a second electrode positioned between the second near-infrared photovoltaic subcell and the first visible photovoltaic subcell, and a third electrode positioned over the first visible photovoltaic subcell, wherein the first electrode and the third electrode are held at the same potential relative to the second electrode. | |||
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9 | US2021036061A1 |
SENSORS AND ELECTRONIC DEVICES
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Publication/Patent Number: US2021036061A1 | Publication Date: 2021-02-04 | Application Number: 16/788,857 | Filing Date: 2020-02-12 | Inventor： Leem, Dong-seok Kim, Rae Sung Choi, Hyesung Kwon, Ohkyu Kim, Changki Kim, Hwang Suk Park, Bum Woo Lee, Jae Jun | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/30 | Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material. | |||
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10 | EP2385556B1 |
Photoactive device with organic layers
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Publication/Patent Number: EP2385556B1 | Publication Date: 2021-01-20 | Application Number: 10161920.3 | Filing Date: 2010-05-04 | Inventor： Männig, Bert Pfeiffer, Martin Uhrich, Christian | Assignee: Heliatek GmbH | IPC: H01L27/30 | ||||
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11 | US10916587B2 |
Image sensor
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Publication/Patent Number: US10916587B2 | Publication Date: 2021-02-09 | Application Number: 16/443,233 | Filing Date: 2019-06-17 | Inventor： Lee, Tae Yon Kim, Chang Hwa Kim, Jae Ho Park, Sang Chun Lee, Gwi Deok Ryan Lee, Beom Suk Lee, Jae Kyu Kakehi, Kazunori | Assignee: Samsung Electronics Co., Ltd. | IPC: H01L27/30 | Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region. | |||
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12 | CN112368855A |
有机光检测器
Public
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Publication/Patent Number: CN112368855A | Publication Date: 2021-02-12 | Application Number: 201980045201.4 | Filing Date: 2019-07-02 | Inventor： N·雅可比-格罗斯 M·梅洛尔 K·奥米尼亚伯斯 | Assignee: 住友化学株式会社 | IPC: H01L51/42 | Abstract: 一种有机光检测器，其包括电子阻挡层，其中该电子阻挡层通过在黑暗无光子的条件期间防止电子从有机光检测器的阳极行进到有机光检测器的光活性层从而防止和/或减小暗电流。该电子阻挡层是由具有下式的化合物形成：[M][X](通式(I))，其中：M是金属；X是CN、SCN、SeCN或TeCN；并且a为至少1。 | |||
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13 | US10910424B2 |
Solid-state image pickup unit, method of manufacturing the same, and electronic apparatus
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Publication/Patent Number: US10910424B2 | Publication Date: 2021-02-02 | Application Number: 14/780,640 | Filing Date: 2014-03-27 | Inventor： Hatano, Keisuke | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: A solid-state image pickup unit includes: a first member including a photoelectric conversion section; and a second member including a reflective plate with a concave surface section, the second member being bonded to a surface opposite to a light incident surface of the first member to allow the concave surface section of the reflective plate to face the photoelectric conversion section. | |||
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14 | CN108389874B |
一种局域场增强型宽光谱高响应的光电探测器
Grant
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Publication/Patent Number: CN108389874B | Publication Date: 2021-01-15 | Application Number: 201810072073.X | Filing Date: 2018-01-25 | Inventor： 王军 韩嘉悦 刘鹏 田夫兰 杨明 | Assignee: 电子科技大学 | IPC: H01L27/28 | Abstract: 本发明公开了一种局域场增强型宽光谱高响应的光电探测器，涉及光电探测器领域；其包括从下至上设置的硅衬底、IC电路和探测器单元阵列，所述探测器单元阵列包括从下至上设置的用于改变探测范围和提供导电沟道的场效应管单元和用于形成施体‑受体局域电场后分离光生电子空穴的增强吸收单元，所述探测器单元阵列用于在短波波段正向注入和长波波段反向注入实现宽光谱高响应的探测信号电流；本发明解决了现有光电探测器的材料吸光受增强材料限制、材料与石墨烯接触后能级固定只能实现正向注入或者反向注入从而导致探测光谱窄、响应低的问题，达到了实现可见光与近红外波段宽光谱、高响应的探测效果。 | |||
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15 | US2021028234A1 |
SOLID STATE IMAGE SENSOR, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE
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Publication/Patent Number: US2021028234A1 | Publication Date: 2021-01-28 | Application Number: 17/068,398 | Filing Date: 2020-10-12 | Inventor： Joei, Masahiro Takimoto, Kaori | Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION | IPC: H01L27/30 | Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode. | |||
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16 | CN112262485A |
光电子器件及其制造过程
Substantial Examination
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Publication/Patent Number: CN112262485A | Publication Date: 2021-01-22 | Application Number: 201980037764.9 | Filing Date: 2019-06-03 | Inventor： 本杰明·布蒂农 皮埃尔·米勒 大卫·吉耶马尔 | Assignee: 爱色乐居 | IPC: H01L51/52 | Abstract: 本发明涉及一种光电子器件，其包括衬底、覆盖衬底的光电子组件的阵列(70)、耦合到光电子组件的第一导电迹线、覆盖阵列的一部分的粘合层，以及与粘合层接触的涂层(44)，该涂层包括外围，该器件还包括第二迹线(72)，该第二迹线反射335nm至10.6μm范围内的波长的辐射，并且以与外围对齐的方式沿着给定方向在第一导电迹线与涂层之间延伸。 | |||
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17 | US2021005815A1 |
ORGANIC PHOTOSENSITIVE DEVICES MADE USING SEMI-ORTHOGONAL SOLVENTS AND METHODS OF MAKING THE SAME
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Publication/Patent Number: US2021005815A1 | Publication Date: 2021-01-07 | Application Number: 16/946,696 | Filing Date: 2020-07-01 | Inventor： Forrest, Stephen R. Lassiter, Brian E. Zimmerman, Jeramy D. | Assignee: The Regents of the University of Michigan | IPC: H01L51/00 | Abstract: Disclosed herein are organic photosensitive optoelectronic device comprising a first layer comprising one or more of a first layer material, a second layer comprising one or more of a second layer material, and a third layer comprising one or more of a third layer material. The second layer may be dissolved in a semi-orthogonal solvent. The first layer and the third layer may be very slightly soluble or practically insoluble in the semi-orthogonal solvent. | |||
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18 | CN112310285A |
传感器和电子装置
Public
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Publication/Patent Number: CN112310285A | Publication Date: 2021-02-02 | Application Number: 202010320596.9 | Filing Date: 2020-04-22 | Inventor： 林东晰 金来成 崔惠成 权五逵 金畅基 金煌奭 朴范雨 李在俊 | Assignee: 三星电子株式会社 | IPC: H01L51/42 | Abstract: 提供了传感器和电子装置。一种传感器包括阳极和阴极以及在阳极与阴极之间的近红外光电转换层。近红外光电转换层被配置为吸收近红外波长光谱的至少一部分的光，并将吸收的光转换成电信号。近红外光电转换层包括第一材料和第二材料，第一材料具有在近红外波长光谱中的最大吸收波长，第二材料与第一材料形成pn结并具有比第一材料的能带隙宽的能带隙。第一材料以比第二材料小的量被包括在近红外光电转换层中。 | |||
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19 | CN109273608B |
一种半透明钙钛矿太阳能电池及其制备方法
Grant
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Publication/Patent Number: CN109273608B | Publication Date: 2021-01-19 | Application Number: 201811308788.7 | Filing Date: 2018-11-05 | Inventor： 程一兵 李天慧 黄福志 | Assignee: 武汉理工大学 | IPC: H01L51/42 | Abstract: 本发明属于钙钛矿太阳能电池领域，具体涉及一种半透明钙钛矿太阳能电池及其制备方法，所述制备方法包括：利用超快激光剥落切线上的透明导电层(P1)；在干净的透明导电层上依次沉积功能层，利用超快激光剥落切线上的功能层且不损伤透明导电层(P2)；在干净的功能层上沉积金属电极，利用超快激光剥落切线上的金属电极层和功能层，且不损伤透明导电层(P3)，P1、P2和P3的位置均需相互错开；切线完成后，即制备得到半透明钙钛矿太阳能电池。本发明利用激光加工半透明钙钛矿太阳能电池，通过激光剥落电池的活性部分，减少组件活性面积，可使组件在可见光范围内的透过率显著上升。 | |||
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20 | US2021006735A1 |
IMAGING DEVICE INCLUDING PHOTOELECTRIC CONVERSION LAYER
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Publication/Patent Number: US2021006735A1 | Publication Date: 2021-01-07 | Application Number: 17/026,851 | Filing Date: 2020-09-21 | Inventor： Miyake, Yasuo Murakami, Masashi Tamaki, Tokuhiko Satou, Yoshiaki | Assignee: Panasonic Intellectual Property Management Co., Ltd. | IPC: H04N5/353 | Abstract: An imaging device including pixels having a photoelectric converter including a first and second electrode, a photoelectric conversion layer; a charge accumulation region electrically connected to the first electrode; and a signal detection circuit. The photoelectric converter is applied with a voltage between the first electrode and the second electrode, and the photoelectric converter has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. A difference between the first voltage and the second voltage is 0.5 V or more, and the voltage supply circuit supplies a voltage between the first voltage and the second voltage to the second electrode in a non-exposure period. |
3.Current Quota