Country
Full text data for US,EP,CN
Type
Legal Validity
Legal Status
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC(Section)
IPC(Class)
IPC(Subclass)
IPC(Group)
IPC(Subgroup)
Agent
Agency
Claims Number
Figures Number
Citation Number of Times
Assignee Number
No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
Application Number Application Number Filing Date Filing Date
Inventor Inventor Assignee Assignee IPC IPC
1
CN112366236A
光能量收集微结构、感光元件和光学器件
Public
Publication/Patent Number: CN112366236A Publication Date: 2021-02-12 Application Number: 202011292023.6 Filing Date: 2020-11-18 Inventor: 常颖   刘晓   韩晓微   Assignee: 沈阳大学   IPC: H01L31/0232 Abstract: 本申请涉及一种光能量收集微结构、感光元件和光学器件。其中,该光能量收集微结构包括:纳米粒子二聚体阵列,该纳米粒子二聚体阵列由周期排列的纳米粒子二聚体构成;纳米粒子二聚体的排列方向垂直于入射光的传播方向;纳米粒子二聚体中的第一纳米粒子和第二纳米粒子沿入射光的传播方向分布,且第一纳米粒子和所述第二纳米粒子在入射光偏振方向错位分布。在入射光的照射下,该光能量收集微结构中构成纳米粒子二聚体的两个纳米粒子将分别被激发,形成电偶极子,产生局域表面等离激元共振,进而发生耦合发生表面等离激元共振增强现象,可以显著提高光能量收集效率。
2
CN112236871A
光接收装置及其制造方法
Substantial Examination
Publication/Patent Number: CN112236871A Publication Date: 2021-01-15 Application Number: 201980037600.6 Filing Date: 2019-05-20 Inventor: 中岛史人   山田友辉   名田允洋   Assignee: 日本电信电话株式会社   IPC: H01L31/0232 Abstract: 本发明包括形成在第一衬底(101)的主表面(101a)上的半导体光放大器(102)。半导体光放大器(102)的一端的端面形成第一反射部(103),所述一端的端面被形成为相对于第一衬底(101)的主表面(101a)倾斜。半导体光放大器(102)的另一端的端面形成第二反射部(104),所述另一端的端面被形成为相对于第一衬底(101)的主表面(101a)倾斜。该光接收装置还包括:第二衬底(105),其背面(105b)结合到第一衬底(101)的背面(101b);以及光电二极管(106),形成在第二衬底(105)的主表面(105a)上。
3
US2021043785A1
Light-Receiving Element and Method for Manufacturing Element
Publication/Patent Number: US2021043785A1 Publication Date: 2021-02-11 Application Number: 17/044,461 Filing Date: 2019-03-27 Inventor: Maeda, Yoshiho   Nakajima, Fumito   Muramoto, Yoshifumi   Kanda, Atsushi   Sano, Kimikazu   Assignee: Nippon Telegraph and Telephone Corporation   IPC: H01L31/0232 Abstract: A light receiving element includes a first substrate, a photodiode formed on a main surface of the first substrate, and a second substrate constituted by a semiconductor and adhered to a rear surface side of the first substrate by an adhesive layer formed from a resin adhesive. A light receiving element according to an embodiment includes a lens that is formed on the side of an adhesion surface of the second substrate, has a convex surface, and is disposed in a light receiving region of the photodiode. The light receiving side of the photodiode is oriented toward the side of the first substrate. The lens is disposed so that the convex surface thereof is oriented toward the side of a light receiving surface of the photodiode.
4
EP3783674A1
LIGHT RECEPTION ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEPTION ELEMENT
Publication/Patent Number: EP3783674A1 Publication Date: 2021-02-24 Application Number: 19788839.9 Filing Date: 2019-04-09 Inventor: Sugimori, Ryo   Tanaka, Yuma   Assignee: Hamamatsu Photonics K.K.   IPC: H01L31/10 Abstract: A light reception element includes a semiconductor portion having a first surface including a light receiving portion and a light shielding portion, and a light shielding metal film provided on the light shielding portion. The metal film has a second surface facing a side opposite to the first surface and receiving incident light. A plurality of recess portions are formed on the second surface. An inner surface of the recess portion includes a curved portion curved such that the recess portion reduces in size in a direction along the second surface from the second surface toward a bottom part of the recess portion.
5
CN112331727A
一种光电探测器
Substantial Examination
Publication/Patent Number: CN112331727A Publication Date: 2021-02-05 Application Number: 202110010695.1 Filing Date: 2021-01-06 Inventor: 胡晓   肖希   陈代高   王磊   Assignee: 武汉光谷信息光电子创新中心有限公司   IPC: H01L31/0232 Abstract: 本发明实施例公开了一种光电探测器,包括:用于传输光信号的光波导结构,以及用于探测所述光波导结构中传输的所述光信号的光吸收层;其中,所述光波导结构包括主波导部和副波导部,所述光波导结构通过所述主波导部接收光信号并通过所述副波导部限制所述光信号的逸散;所述主波导部和所述副波导部沿第一方向间隔设置,所述光信号在所述主波导部和所述副波导部内沿第二方向传输,所述第一方向与所述第二方向垂直。
6
CN112289876A
一种封装光窗金属管壳结构
Public
Publication/Patent Number: CN112289876A Publication Date: 2021-01-29 Application Number: 202011240561.0 Filing Date: 2020-11-09 Inventor: 赵延民   冯广智   李军   Assignee: 珠海市镭通激光科技有限公司   IPC: H01L31/0232 Abstract: 本发明公开了一种封装光窗金属管壳结构,其技术方案的要点是包括有底座,在底座上设有竖直的管桶,在所述管桶的中部设有贯穿所述底座的通光孔。本专利的光窗金属管壳,可解决传统TO管壳上部内凹边沿区域的挡光问题,提高光电器件的光利用率。在制作封装光窗时,将窗口透镜置于金属管壳上方,可兼容多种光窗透镜,如平窗、半球状、非球面、菲涅耳透镜等透镜结构,实现不同出光光效、出光角度等应用需求。减少金属件模具开设数量,节省制造及维护费用和时间,极大节省产品系列开发成本和周期,易于批量、标准化生产。
7
CN212542448U
一种同轴封装的半导体光探测器
Grant
Publication/Patent Number: CN212542448U Publication Date: 2021-02-12 Application Number: 202021404960.1 Filing Date: 2020-07-16 Inventor: 李国英   Assignee: 上海矽昊电子技术有限公司   IPC: H01L31/0203 Abstract: 本实用新型公开了一种同轴封装的半导体光探测器,包括基板,所述基板的上表面螺纹连接有罩壳,所述罩壳的上表面中心固接有透镜,所述基板的上表面设有接头,所述接头的内部设有引脚,所述引脚的顶端连接有贴片台。该同轴封装的半导体光探测器,通过基板、罩壳、透镜、接头、引脚、贴片台、半导体光探测器芯片和保质机构之间的配合,同时通过圆形坡槽将引脚与金属盘之间进行焊接,即可完成对半导体光探测器芯片与基板之间的对接安装,期间半导体光探测器芯片与透镜之间的距离较为容易进行把控,利于装配人员进行高效作业进行,不易出现探测器灵敏性欠缺情况出现,使得产品的质量得以保障。
8
CN109873044B
一种基于光控自旋微波振荡器的光电转换元件
Grant
Publication/Patent Number: CN109873044B Publication Date: 2021-01-15 Application Number: 201910098100.5 Filing Date: 2019-01-31 Inventor: 赵巍胜   魏家琦   林晓阳   张博宇   Assignee: 北京航空航天大学   IPC: H01L31/068 Abstract: 本发明公开一种基于光控自旋微波振荡器的低功耗光电转换元件核心单元,有两种实现路径,路径一,采用光敏磁性材料作为自由层制备光可调控磁性隧道结。路径二,将P型N型材料以及传统磁性多层膜通过微纳加工手段集成在一起制备复合型光可调控磁性隧道结。本发明一种基于光控自旋微波振荡器的光电转换元件,具有将光纤信号直接转换为高频微波电信号的功能。打破了长期以来主流的光信号——电信号——高频射频信号的通讯架构,直接降低了通讯过程中的功耗。本发明一种基于光控自旋微波振荡器的光电转换元件吸收了自旋微波振荡器的诸多优点,不仅体积小、功耗低,而且微波输出频率宽频可调,极具应用前景。
9
CN112310237A
波导耦合型单载流子探测器
Public
Publication/Patent Number: CN112310237A Publication Date: 2021-02-02 Application Number: 202011200268.1 Filing Date: 2020-10-30 Inventor: 叶焓   韩勤   肖峰   王帅   陆子晴   肖帆   Assignee: 中国科学院半导体研究所   IPC: H01L31/105 Abstract: 本公开提供一种波导耦合型单载流子探测器,包括:衬底;波导区,包括:波导下包层,形成于所述衬底之上;以及耦合波导层,形成于所述波导下包层之上,用于与外部光源进行低损耗耦合;以及探测器区,包括:光学匹配层,形成于所述耦合波导层之上,用于对光场模式进行转换与耦合;光吸收层,形成于所述光学匹配层之上,用于吸收光场能量并产生载流子以及形成P型接触表面;载流子收集层,形成于所述光吸收层上方,作为电子的快速渡越区域;带隙过渡层,形成于所述光吸收层与载流子收集层之间,用于降低光吸收层和载流子收集层两者的能带高度差;以及顶部N型层,形成于载流子收集层之上,作为收集光电流的N型金属接触层。
10
CN112385049A
光传感器及光检测系统
Public
Publication/Patent Number: CN112385049A Publication Date: 2021-02-19 Application Number: 201980042953.5 Filing Date: 2019-10-25 Inventor: 宍戸三四郎   町田真一   德原健富   能泽克弥   Assignee: 松下知识产权经营株式会社   IPC: H01L31/0232 Abstract: 本发明的目的是提供一种能够进行窄带的摄像的鲁棒且能够便宜地制造的光传感器(100)。光传感器(100)具备:光电变换层(10);以及长通滤波器(60),配置在上述光电变换层(10)的上方,有选择地使所入射的光中的具有起始波长(λC)以上的波长的成分透射。上述光电变换层(10)具有对于比上述长通滤波器(60)的上述起始波长(λC)长的第1波长(λ1)呈现第1峰值(Pk1)的光谱灵敏度特性。上述起始波长(λC)下的上述光电变换层(10)的光谱灵敏度是上述第1波长(λ1)下的上述光电变换层(10)的光谱灵敏度的0%以上50%以下。
11
CN112349803A
一种锗硅光电探测器
Substantial Examination
Publication/Patent Number: CN112349803A Publication Date: 2021-02-09 Application Number: 202011197956.7 Filing Date: 2020-10-30 Inventor: 陈代高   肖希   王磊   胡晓   张宇光   张红广   刘敏   吴定益   Assignee: 武汉光谷信息光电子创新中心有限公司   IPC: H01L31/109 Abstract: 本发明实施例公开了一种锗硅光电探测器,其特征在于,包括:硅平板波导层,以及位于所述硅平板波导层上的锗吸收层和脊波导层;其中,所述锗吸收层包括间隔设置的第一锗吸收区和第二锗吸收区;所述脊波导层包括位于所述第一锗吸收区和所述第二锗吸收区之间的第一波导区;所述脊波导层用于接收光信号,并通过所述第一波导区将接收到的所述光信号传递至所述第一锗吸收区和所述第二锗吸收区;所述第一波导区的宽度沿光信号的传递方向变窄。
12
US2021050484A1
Optoelectronic Semiconductor Component, and Method for Producing an Optoelectronic Semiconductor Component
Publication/Patent Number: US2021050484A1 Publication Date: 2021-02-18 Application Number: 16/963,482 Filing Date: 2019-01-24 Inventor: Holland, Brendan   Bröll, Markus   Assignee: OSRAM OLED GmbH   IPC: H01L33/46 Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.
13
CN112331744A
一种光电探测器的制备方法
Substantial Examination
Publication/Patent Number: CN112331744A Publication Date: 2021-02-05 Application Number: 202110010821.3 Filing Date: 2021-01-06 Inventor: 胡晓   Assignee: 武汉光谷信息光电子创新中心有限公司   IPC: H01L31/18 Abstract: 本发明实施例公开了一种光电探测器的制备方法,所述方法包括:提供衬底,所述衬底包括第一半导体材料区;在所述第一半导体材料区上执行刻蚀工艺,以形成用于传输光信号的光波导结构;所述光波导结构包括沿第一方向间隔设置的主波导部和副波导部,所述主波导部和所述副波导部沿第二方向延伸,所述第一方向与所述第二方向垂直;在所述光波导结构上形成用于探测所述光波导结构中传输的所述光信号的光吸收层。
14
CN112242456A
一种基于光学微带天线非对称集成的二维材料探测器
Substantial Examination
Publication/Patent Number: CN112242456A Publication Date: 2021-01-19 Application Number: 202010965512.7 Filing Date: 2020-09-15 Inventor: 周靖   郭尚坤   余宇   嵇兆煜   代旭   邓杰   陈效双   蔡清元   储泽世   李方哲   兰梦珂   Assignee: 中国科学院上海技术物理研究所   IPC: H01L31/101 Abstract: 本发明公开了一种基于光学微带天线非对称集成的二维材料探测器,其结构包括金属反射面、介质间隔层、二维活性材料层,以及顶层源电极和金属栅条集成的漏电极。金属‑二维活性光敏材料‑金属光探测结构的自驱动响应来自二维材料与金属接触之间的肖特基结,光学微带天线的非对称集成打破对称性,通过光学微带天线的高效耦合与光场局域实现二维材料接触结区光吸收大幅增强,同时延长接触结的边界,而在另一电极处的二维材料的光吸收受到距离很近的金属底面的抑制,两个电极附近的光响应对比度高达一百多倍。在泛光照射下,光学微带天线集成二维材料的响应率比传统金属光栅集成二维材料的响应率高出一个数量级以上。
15
CN112186075A
一种波导型光电探测器及制造方法
Substantial Examination
Publication/Patent Number: CN112186075A Publication Date: 2021-01-05 Application Number: 202011077809.6 Filing Date: 2020-10-10 Inventor: 熊文娟   黎奔   林鸿霄   董燕   王桂磊   亨利·h·阿达姆松   Assignee: 中国科学院微电子研究所   广东省大湾区集成电路与系统应用研究院   IPC: H01L31/18 Abstract: 本发明提供一种波导型光电探测器及制造方法,第一衬底的正面形成有包覆层,包覆层中形成有第一氮化硅光波导,第二衬底的正面形成有锗外延层,第一衬底和第二衬底的正面键合之后,从第二衬底的背面进行减薄,以暴露锗外延层。而后对锗外延层进行刻蚀工艺,形成台阶结构,在台阶结构的侧壁形成第二氮化硅光波导,在锗外延层上形成光电探测器,从而实现氮化硅光波导与锗基探测器的集成。这样,第一氮化硅光波导传输的光能够通过第二氮化硅光波导更快传输至光电探测器中,利用氮化硅光波导较低的传输损耗性,提高光的传输效率,并且氮化硅波导与锗基光电探测器之间能形成高质量的氮化硅/锗界面,能够提高光电探测器的响应度以及光电转换能力。
16
EP3762970A1
OPTOELECTRONIC MODULES AND WAFER-LEVEL METHODS FOR MANUFACTURING THE SAME
Publication/Patent Number: EP3762970A1 Publication Date: 2021-01-13 Application Number: 19710812.9 Filing Date: 2019-02-27 Inventor: Yu, Qi Chuan   Rudmann, Hartmut   Wang, Ji   Leong, Kam Wah   Ng, Kim Lung   Assignee: AMS Sensors Singapore Pte. Ltd.   IPC: H01L31/0203
17
US2021011231A1
PHOTODETECTOR STRUCTURE
Publication/Patent Number: US2021011231A1 Publication Date: 2021-01-14 Application Number: 17/037,864 Filing Date: 2020-09-30 Inventor: Cho, Keun Yeong   Ji, Ho-chul   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: G02B6/42 Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.
18
US2021050461A1
PHOTON DETECTION DEVICE AND PHOTON DETECTION METHOD
Publication/Patent Number: US2021050461A1 Publication Date: 2021-02-18 Application Number: 16/645,346 Filing Date: 2018-07-11 Inventor: Park, Chan Yong   Baek, Soo Hyun   Park, Chul Woo   Cho, Seok Beom   Assignee: ID QUANTIQUE S.A.   WOORIRO CO., LTD.   IPC: H01L31/0232 Abstract: The present invention relates to a photon detection device having a high light detection efficiency, the photon detection device comprising: a first light reception part which receives a gate signal and outputs a first signal; a second light reception part which receives a gate signal and outputs a second signal; and a determination part which determines whether or not a photon is received, on the basis of the first signal from the first light reception part and the second signal from the second light reception part, wherein the photon is incident on the first light reception part among the first light reception part and the second light reception part, and the breakdown voltage of the second light reception part is higher than the breakdown voltage of the first light reception part.
19
CN212567438U
光电池芯片及光电码盘编码器
Grant
Publication/Patent Number: CN212567438U Publication Date: 2021-02-19 Application Number: 202021641465.2 Filing Date: 2020-08-10 Inventor: 赵旭旭   张薇   邢康伟   朱恒宇   Assignee: 北京锐达芯集成电路设计有限责任公司   IPC: G01D5/347 Abstract: 本实用新型公开了一种光电池芯片及光电码盘编码器。该光电池芯片包括:芯片主体、设置在芯片主体上的光栅层、设置在光栅层与芯片主体之间的底层隔离层、以及设置在光栅层背离芯片主体一侧的顶层隔离层;其中:芯片主体包括用于将光信号转换为电信号的光电转换结构以及用于引出电信号的输出端,光电转换结构包括感光区;光栅层对应于感光区的区域设有若干透光狭缝;底层隔离层和顶层隔离层均为透明,使光线能够依次通过顶层隔离层、透光狭缝和底层隔离层到达感光区。此光电池芯片,通过将光栅与传统光电池芯片集成,提升了光栅与光电池之间的对位精度。本实用新型公开的光电码盘编码器,采用上述光电池芯片,降低了装配对位难度及对位校准误差。
20
US2021057592A1
SEMICONDUCTOR DETECTORS WITH BUTT-END COUPLED WAVEGUIDE AND METHOD OF FORMING THE SAME
Publication/Patent Number: US2021057592A1 Publication Date: 2021-02-25 Application Number: 16/544,866 Filing Date: 2019-08-19 Inventor: Bian, Yusheng   Jacob, Ajey Poovannummoottil   Assignee: GLOBALFOUNDRIES INC.   IPC: H01L31/0232 Abstract: The present disclosure generally relates to semiconductor detectors for use in optoelectronic/photonic devices and integrated circuit (IC) chips, and methods for forming same. The present disclosure also relates to photodetectors integrated with waveguide stacks, more particularly, photodetectors with butt-end coupled waveguides. The present disclosure also relates to methods of forming such structures.
Total 500 pages