| No. | Publication Number | Title | Publication/Patent Number Publication/Patent Number |
Publication Date
Publication Date
|
Application Number Application Number |
Filing Date
Filing Date
|
Inventor Inventor | Assignee Assignee |
IPC
IPC
|
|||||
|
1 | CN112204755A |
光差分检测器及检查装置
Substantial Examination
|
Publication/Patent Number: CN112204755A | Publication Date: 2021-01-08 | Application Number: 201980035649.8 | Filing Date: 2019-03-19 | Inventor： 山田俊毅 | Assignee: 浜松光子学株式会社 | IPC: H01L31/10 | Abstract: 光差分检测器(21A)具备：第一APD(22A)及第二APD(22B)；对第一APD(22A)施加第一偏压的第一电压施加部(23A)、及对第二APD(22B)施加第二偏压的第二电压施加部(23B)；差分放大器(25)，第一APD(22A)与第二APD(22B)并联连接，将来自第一APD(22A)的第一信号电流与来自第二APD(22B)的第二信号电流差分放大；及反馈控制部(26)，以第一APD(22A)中的第一监视用电流的低频成分与第二APD(22B)中的第二监视用电流的低频成分相等的方式控制第二偏压。 | |||
|
|
2 | EP3770976A1 |
PHOTOELECTRIC CONVERSION ELEMENT
|
Publication/Patent Number: EP3770976A1 | Publication Date: 2021-01-27 | Application Number: 19771293.8 | Filing Date: 2019-03-22 | Inventor： Seike, Takahiro Ferrara, Giovanni | Assignee: Sumitomo Chemical Company, Limited | IPC: H01L31/10 | Abstract: To improve detectivity of a photoelectric conversion element (10). A photoelectric conversion element including a pair of electrodes (12, 16), an active layer (14) provided between the pair of electrodes, and an intermediate layer (13. 15) provided between the active layer and at least one of the pair of electrodes, in which the intermediate layer has a surface that is in contact with the active layer, the surface having a surface roughness having an absolute value greater than 0.22 nm but smaller than 1.90 nm, and in which the active layer is not less than 350 nm but not more than 800 nm in thickness. | |||
|
|
3 | CN109416278B |
红外线检测元件以及红外线检测元件的制造方法
Grant
|
Publication/Patent Number: CN109416278B | Publication Date: 2021-02-09 | Application Number: 201780041765.1 | Filing Date: 2017-05-23 | Inventor： 油谷明荣 | Assignee: 三菱电机株式会社 | IPC: G01J1/02 | Abstract: 红外线检测元件具有包括串联连接的第1、第2PN结二极管的二极管部。二极管部具有邻接的阱状的N型、P型第1区域、构成N型第1区域和第1PN结二极管的P型第2区域、以及构成P型第1区域和第2PN结二极管的N型第2区域。在N型、P型第1区域分别设置有经由导电性材料将第1PN结二极管与第2PN结二极管电连接的N型、P型第3区域。N型第1区域具有设置于P型第1区域与P型第2区域之间的P型第4区域。P型第1区域具有设置于N型第1区域与N型第2区域之间的N型第4区域。 | |||
|
|
4 | CN107710435B |
光电转换元件、图像拾取元件、层叠型图像拾取元件和固态图像拾取装置
Grant
|
Publication/Patent Number: CN107710435B | Publication Date: 2021-02-19 | Application Number: 201680034240.0 | Filing Date: 2016-07-14 | Inventor： 村田昌树 茂木英昭 平田晋太郎 八木岩 氏家康晴 坂东雅史 白泽乐 小林一 中本光则 户木田裕一 | Assignee: 索尼公司 | IPC: H01L51/42 | Abstract: 一种通过顺次层叠至少第一电极、有机光电转换层和第二电极而构成的图像拾取元件，所述有机光电转换层包含具有以下结构式(1)的第一有机半导体材料。 | |||
|
|
5 | EP3767674A2 |
IMAGING DEVICE
|
Publication/Patent Number: EP3767674A2 | Publication Date: 2021-01-20 | Application Number: 20192168.1 | Filing Date: 2016-06-17 | Inventor： Nozawa, Katsuya | Assignee: Panasonic Intellectual Property Management Co., Ltd. | IPC: H01L27/146 | Abstract: An imaging device includes pixels arranged one-dimensionally or two-dimensionally. Each of the pixels (20) includes an electrode (38) that is electrically connected to the other pixels, a charge capturing unit (32) that is separated from the other pixels, and a photoelectric conversion layer (39) that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes (105), and one of a first substance (106) and a second substance (106), the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes. | |||
|
|
6 | CN112292763A |
电磁波检测器以及电磁波检测器阵列
Public
|
Publication/Patent Number: CN112292763A | Publication Date: 2021-01-29 | Application Number: 201980031374.0 | Filing Date: 2019-02-28 | Inventor： 福岛昌一郎 岛谷政彰 小川新平 | Assignee: 三菱电机株式会社 | IPC: H01L31/10 | Abstract: 电磁波检测器(100)包括：基板(5)，具有表面和背面；绝缘层(4)，设置于基板(5)的表面上，由稀土类氧化物构成；一对电极(2)，设置于绝缘层(4)之上，隔开间隔相对配置；以及二维材料层(1)，在绝缘层(4)之上以与一对电极(2)电连接的方式设置。稀土类氧化物包含由第1稀土类元素的氧化物构成的母材和在母材中被活化的、与第1稀土类元素不同的第2稀土类元素。 | |||
|
|
7 | CN112313800A |
传感器元件和电子设备
Public
|
Publication/Patent Number: CN112313800A | Publication Date: 2021-02-02 | Application Number: 201980042173.0 | Filing Date: 2019-06-28 | Inventor： 横川创造 押山到 伊藤干记 | Assignee: 索尼半导体解决方案公司 | IPC: H01L27/146 | Abstract: 本公开涉及一种能够改善传感器感度的传感器元件和电子设备。在半导体层中形成有接收预定波长范围内的光并执行光电转换的光电转换元件。在作为所述半导体层的光入射侧的光接收面上设置有抑制光反射的反射抑制部，并且在作为所述半导体层的所述光接收面相对侧的电路面上设置有抑制从所述光接收面入射的光透过所述半导体层的透过抑制部。本技术例如可以适用于背面照射型CMOS图像传感器。 | |||
|
|
8 | EP3780102A1 |
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
|
Publication/Patent Number: EP3780102A1 | Publication Date: 2021-02-17 | Application Number: 19776725.4 | Filing Date: 2019-03-15 | Inventor： Ohura, Masashi | Assignee: Sony Semiconductor Solutions Corporation | IPC: H01L27/146 | Abstract: The present technology relates to a solid-state imaging device and an electronic device for increasing the degree of freedom regarding arrangement of transistors. Provided are a photoelectric conversion unit configured to perform photoelectric conversion, a trench penetrating a semiconductor substrate in a depth direction and formed between the photoelectric conversion units respectively formed in adjacent pixels, and a PN junction region configured by a P-type region and an N-type region on a sidewall of the trench, in which a part of sides surrounding the photoelectric conversion unit includes a region where the P-type region is not formed or a region where the P-type region is thinly formed. The PN junction region is formed on at least one side of four sides surrounding the photoelectric conversion unit, and the P-type region is not formed on the remaining sides. The present technology can be applied to, for example, a back-illuminated-type CMOS image sensor. | |||
|
|
9 | EP3779379A1 |
INFRARED SOLID-STATE IMAGING DEVICE
|
Publication/Patent Number: EP3779379A1 | Publication Date: 2021-02-17 | Application Number: 18913256.6 | Filing Date: 2018-09-26 | Inventor： Yutani, Akie | Assignee: Mitsubishi Electric Corporation | IPC: G01J1/02 | Abstract: An infrared solid state imaging device includes: a PN junction diode (D1) that has a region (50) having a first conductivity type, and a region (52) having a second conductivity type which is in contact with the region (50) at a junction surface (70) and which has a first shortest length (Ln) that is a shortest length from the junction surface (70) to a junction surface (72); a PN junction diode (D2) that has a region (54) having the first conductivity type which is in contact with the region (52) at the junction surface (72) and which has a second shortest length (Lp) that is a shortest length from the junction surface (72) to a junction surface (74), the second shortest length being different from the first shortest length, and a region (56) having the second conductivity type which is in contact with the region (54) at the junction surface (74); an insulating film (20) serving as an element isolation region which establishes electrical isolation between the region (50) and the region (56), between the region (50) and the region (54), and between the region (52) and the region (56); and a metal wire provided on the region (52) and the region (54), wherein the PN junction diode (D1) and the PN junction diode (D2) are connected in series. | |||
|
|
10 | CN112272869A |
使用石墨烯的电子器件、该使用石墨烯的电子器件的制造方法以及具备该使用石墨烯的电子器件的电磁波检测器
Substantial Examination
|
Publication/Patent Number: CN112272869A | Publication Date: 2021-01-26 | Application Number: 201980018111.6 | Filing Date: 2019-01-09 | Inventor： 岛谷政彰 小川新平 福岛昌一郎 | Assignee: 三菱电机株式会社 | IPC: H01L31/10 | Abstract: 具备：形成催化金属(42)的工序；形成催化金属(40)的工序；以使催化金属(42)及催化金属(40)的上表面露出的方式形成保护膜(22)的工序；在露出的催化金属(42)及催化金属(40)之上形成石墨烯层(30)的工序；以覆盖石墨烯层(30)的方式形成绝缘膜(20)的工序；在绝缘膜(20)上形成基板(10)的工序；以及去除催化金属(42)的工序，能够减少向石墨烯层的工艺损伤，能够提高性能。 | |||
|
|
11 | US2021036176A1 |
OPTICAL SEMICONDUCTOR ELEMENT
|
Publication/Patent Number: US2021036176A1 | Publication Date: 2021-02-04 | Application Number: 17/062,461 | Filing Date: 2020-10-02 | Inventor： Fujimoto, Kenji Himeda, Koshi Tada, Toshihiro Toritsuka, Tetsuro Kaburaki, Shinji | Assignee: Murata Manufacturing Co., Ltd. | IPC: H01L31/10 | Abstract: An optical semiconductor element having a mesa portion includes a substrate and semiconductor layers on the substrate. The optical semiconductor element further includes a first contact electrode, a second contact electrode on the semiconductor layer, first and second lead-out wires connected to the first and second contact electrodes, respectively, and an insulating film covering at least an upper surface of the semiconductor layer and the second contact electrode. The second lead-out wire is connected to the second contact electrode in an opening of the insulating film. An outer peripheral end of the second contact electrode in at least a portion where the second contact electrode and the second lead-out wire are connected is above and outside an outer peripheral end of a connection portion with the semiconductor layer, and an inner peripheral end is above and inside an inner peripheral end of the connection portion with the semiconductor layer. | |||
|
|
12 | CN112385041A |
固体摄像元件和电子设备
Public
|
Publication/Patent Number: CN112385041A | Publication Date: 2021-02-19 | Application Number: 201980045279.6 | Filing Date: 2019-06-03 | Inventor： 正垣敦 | Assignee: 索尼半导体解决方案公司 | IPC: H01L27/146 | Abstract: 根据本发明的一个实施例的固体摄像元件包括：半导体基板，其针对每个像素具有光电转换部；像素晶体管，其设置在半导体基板的一个表面上；和元件分离部，其设置在半导体基板上，包括具有不同构造的第一元件分离部和第二元件分离部，并且限定像素晶体管的活性区域。第二元件分离部在侧面上具有沿第二元件分离部的深度方向杂质浓度不同的第一半导体区域和第二半导体区域。 | |||
|
|
13 | CN110611009B |
嵌套式三维沟槽电极硅探测器
Grant
|
Publication/Patent Number: CN110611009B | Publication Date: 2021-02-02 | Application Number: 201910841853.0 | Filing Date: 2019-09-06 | Inventor： 李正 刘美萍 张亚 王明洋 | Assignee: 湘潭大学 | IPC: H01L31/10 | Abstract: 本发明公开了一种嵌套式三维沟槽电极硅探测器，包括厚度为1μm的二氧化硅保护层，二氧化硅保护层上设有外围电极，外围电极是从上到下内部中空的长方体结构；外围电极内嵌有嵌套部分和中心电极，嵌套部分由位于二氧化硅层上表面的p型硅基体和位于p型硅基体上的n型重掺杂磷硅层与p型轻掺杂硼硅层组成；中心电极底部贯穿嵌套部分与二氧化硅保护层相接；外围电极与中心电极间设有隔离硅体；外围电极、中心电极和隔离硅体的顶部位于同一平面内，且三者顶部设有电极接触层，电极接触层由与外围电极及中心电极相接的铝皮和与隔离硅体相接的二氧化硅组成；电极接触层与外围电极、中心电极相接的铝皮上分别设有电极接触端口。探测器实用性大大增强。 | |||
|
|
14 | US2021028317A1 |
SELENIUM PHOTOMULTIPLIER AND METHOD FOR FABRICATION THEREOF
|
Publication/Patent Number: US2021028317A1 | Publication Date: 2021-01-28 | Application Number: 17/061,035 | Filing Date: 2020-10-01 | Inventor： Goldan, Amirhossein Zhao, Wei | Assignee: The Research Foundation for The State University of New York | IPC: H01L31/0272 | Abstract: Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region. | |||
|
|
15 | EP2432729B1 |
NANOTHERMOCOUPLE DETECTOR BASED ON THERMOELECTRIC NANOWIRES
|
Publication/Patent Number: EP2432729B1 | Publication Date: 2021-01-13 | Application Number: 10778334.2 | Filing Date: 2010-05-19 | Inventor： Huber, Tito | Assignee: Howard University | IPC: B82B1/00 | ||||
|
|
16 | CN112234097A |
一种非特意掺杂III-V族半导体的欧姆接触结构及其制备方法与应用
Substantial Examination
|
Publication/Patent Number: CN112234097A | Publication Date: 2021-01-15 | Application Number: 202011052522.8 | Filing Date: 2020-09-29 | Inventor： 黄永清 杨丹 刘凯 段晓峰 杜嘉薇 王俊 王琦 任晓敏 蔡世伟 | Assignee: 北京邮电大学 | IPC: H01L29/45 | Abstract: 本发明属于光电子半导体技术领域，具体涉及一种非特意掺杂III‑V族半导体的欧姆接触结构及其制备方法与应用。所述欧姆接触结构包括：非特意掺杂III‑V族半导体层，及其表面的氧化镍层。本发明首次提出以氧化镍层与非特意掺杂III‑V族半导体层形成欧姆接触结构，成功解决了非特意掺杂III‑V族半导体材料难以直接形成良好的欧姆接触特性的技术问题。同时，本发明利用氧化镍薄膜的透明导电特性，将其作为III‑V族半导体有源器件的电极，有效解决传统接触电极在光耦合时阻挡信号光、降低光耦合效率和减小有效有源区域面积的技术问题。 | |||
|
|
17 | US10890761B2 |
Photoreactive sensor including optical amplification phototransistor, and display panel and vehicle control system including photoreactive sensor
|
Publication/Patent Number: US10890761B2 | Publication Date: 2021-01-12 | Application Number: 15/568,988 | Filing Date: 2015-12-16 | Inventor： Kim, Sun Kook Hong, Seong In Hong, Young Ki Kim, Dong Han | Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY | IPC: G06F3/041 | Abstract: Disclosed is a photoreactive sensor including an optical amplification phototransistor, in which a non-overlapping region that does not overlap with a local gate electrode between a source electrode and a drain electrode is formed and which senses an optical image through the non-overlapping region for amplify photoconductivity; and a contact light emitting device that is formed on the optical amplification phototransistor and generates the optical image corresponding to a contacted surface upon contact with an object. | |||
|
|
18 | CN112385043A |
光接收元件和测距模块
Public
|
Publication/Patent Number: CN112385043A | Publication Date: 2021-02-19 | Application Number: 201980045810.X | Filing Date: 2019-07-04 | Inventor： 渡辺竜太 | Assignee: 索尼半导体解决方案公司 | IPC: H01L27/146 | Abstract: 本发明涉及一种能够改善特性的光接收元件和测距模块。该光接收元件包括片上透镜、布线层和布置在片上透镜与布线层之间的半导体层，该半导体层包括施加有第一电压的第一电压施加部、施加有与第一电压不同的第二电压的第二电压施加部、布置在第一电压施加部附近的第一电荷检测部以及布置在第二电压施加部附近的第二电荷检测部，并且第一电压施加部和第二电压施加部均在半导体层中被绝缘膜覆盖。例如，本技术可以适用于通过ToF方法生成距离信息的光接收元件。 |
