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1
CN109545909B
一种氮化镓基发光二极管外延片的生长方法
Grant
Publication/Patent Number: CN109545909B Publication Date: 2021-01-12 Application Number: 201811137764.X Filing Date: 2018-09-28 Inventor: 丁涛   周飚   胡加辉   李鹏   Assignee: 华灿光电(浙江)有限公司   IPC: H01L33/00 Abstract: 本发明公开了一种氮化镓基发光二极管外延片的生长方法,属于半导体技术领域。包括:提供至少两种设有氮化铝层的衬底,各种衬底上的氮化铝层的厚度不同;提供一石墨基座,石墨基座上设有多个口袋;在每个口袋中放置一个衬底,衬底上的氮化铝层朝向口袋的开口,分布在同一个圆上的口袋中放置的衬底上的氮化铝层的厚度相同,分布在至少两个同心圆上的口袋中放置的衬底上的氮化铝层的厚度自至少两个同心圆的圆心沿至少两个同心圆的径向逐渐减少;在每个口袋中放置的衬底上的氮化铝层上依次生长N型半导体层、有源层和P型半导体层,形成氮化镓基发光二极管外延片。本发明可使得所有口袋中形成的外延片的翘曲一致。
2
US2021036181A1
METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE
Publication/Patent Number: US2021036181A1 Publication Date: 2021-02-04 Application Number: 16/938,080 Filing Date: 2020-07-24 Inventor: Nitta, Toshiyuki   Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.   IPC: H01L33/00 Abstract: A method for manufacturing an optical semiconductor device includes the steps of bonding a chip including a first substrate and a compound semiconductor layer disposed on the first substrate to a second substrate including silicon such that the compound semiconductor layer faces the second substrate; after the step of bonding the chip, etching the first substrate; after the etching step, forming a resist having a residue of the first substrate exposed therefrom and covering the compound semiconductor layer and the second substrate; and after the step of forming the resist, etching the residue.
3
CN112424957A
用于通过一步膜层压生产LED的方法
Public
Publication/Patent Number: CN112424957A Publication Date: 2021-02-26 Application Number: 201880093367.9 Filing Date: 2018-05-18 Inventor: 冯雅靖   邹鲁   Assignee: 罗门哈斯电子材料有限责任公司   DDP特种电子材料美国第9有限公司   IPC: H01L33/00 Abstract: 本发明涉及一种用于通过一步膜层压生产LED的方法。所述方法包括:通过一步膜层压将两个或更多个LED与两个或更多个有色荧光粉膜层压在一起;其中所述有色荧光粉膜中的每个包含具有最大tanδ的彼此不同的有色荧光粉组合物;并且每个最大tanδ的差异在0‑30%的范围内变化。在本发明中,所述用于生产LED的方法可以大大提高生产效率(即,一步实现双色LED和多色LED)并降低拥有成本。进一步,它可以改善荧光粉分散的均匀性,从而改善LED的颜色品质。
4
CN112313804A
摄像装置
Public
Publication/Patent Number: CN112313804A Publication Date: 2021-02-02 Application Number: 201880094719.2 Filing Date: 2018-07-13 Inventor: 曾我技   Assignee: 奥林巴斯株式会社   IPC: H01L33/00 Abstract: 实施方式的摄像装置具有摄像电路、可变电压电源、发光元件、恒流驱动电路和控制电路,所述可变电压电源的输出端子与所述发光元件的输入端子连接,所述发光元件的输出端子与所述恒流驱动电路的输入端子连接,所述控制电路对流入所述恒流驱动电路的电流进行控制,在所述摄像电路进行摄像的期间使所述发光元件点亮,在所述摄像电路不进行摄像的期间使所述发光元件熄灭,在使所述发光元件点亮的期间,根据所述恒流驱动电路的输入端子的电压对由所述可变电压电源施加的电压进行控制,在使所述发光元件熄灭的期间,对所述可变电压电源进行控制,使其施加所述发光元件的顺从电压以上的电压。
5
CN212625623U
一种散热式发光二极管的卡件
Grant
Publication/Patent Number: CN212625623U Publication Date: 2021-02-26 Application Number: 202021812378.9 Filing Date: 2020-08-26 Inventor: 王锡刚   Assignee: 江西红亮光彩电子科技有限公司   IPC: H01L33/00 Abstract: 本实用新型涉及二极管技术领域,且公开了一种散热式发光二极管的卡件,解决了目前市场上的发光二极管散热性差和制作效率低下的问题,其包括卡件体和工作台,所述卡件体包括外壳、散热孔、支架、正极杆、负极杆、LED芯片和卡片,外壳的表面开设有散热孔,外壳的内部安装有支架,支架的顶部安装有LED芯片,支架底部的两侧分别安装有正极杆和负极杆,正极杆与负极杆的表面之间活动连接有卡片,工作台的顶部固定连接有动力框,动力框内腔的两侧之间固定连接有放置框,卡片活动连接在放置框的内部,该散热式发光二极管的卡件,使发光二极管灯具散热器更为轻便,且节省材料,节约成本,散热效果好,且提升了发光二极管的寿命。
6
US2021005777A1
METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT
Publication/Patent Number: US2021005777A1 Publication Date: 2021-01-07 Application Number: 16/908,354 Filing Date: 2020-06-22 Inventor: Inoue, Naoto   Yamamoto, Minoru   Okumura, Satoshi   Okamoto, Hiroki   Tamemoto, Hiroaki   Assignee: NICHIA CORPORATION   IPC: H01L33/00 Abstract: A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.
7
CN109686821B
一种发光二极管的外延片的制备方法
Grant
Publication/Patent Number: CN109686821B Publication Date: 2021-02-19 Application Number: 201811451158.5 Filing Date: 2018-11-30 Inventor: 洪威威   王倩   周飚   胡加辉   Assignee: 华灿光电(浙江)有限公司   IPC: H01L33/00 Abstract: 本发明公开了一种发光二极管的外延片的制备方法,属于发光二极管制造领域。向反应腔内通入三甲基镓,三甲基镓作用在AlN层上,三甲基镓中的镓原子会被AlN层远离衬底的表面上势能较低的微坑吸引,镓原子填充进AlN层上的微坑,使得AlN层的表面较为平整;而间断性地通入三甲基镓,可避免镓原子填充过度使微坑处出现凸起,使AlN层远离衬底的表面的粗糙度减小,保证AlN层上生长的三维GaN成核层的表面平整度,进而保证整个外延片的表面平整度,有利于提高发光二极管的发光均匀度。而镓原子填充AlN层上的微坑,也可避免AlN层在微坑处的缺陷转移至三维GaN成核层中,提高三维GaN成核层的质量,有利于保证外延片的晶体质量,进而提高发光二极管的发光效率。
8
CN112204757A
基于本征等离子体激元-激子极化子的光电器件
Substantial Examination
Publication/Patent Number: CN112204757A Publication Date: 2021-01-08 Application Number: 201980035755.6 Filing Date: 2019-06-14 Inventor: A·法尔克   D·b·法尔梅尔   Assignee: 国际商业机器公司   IPC: H01L33/00 Abstract: 半导体器件包括具有厚度和宽度的条带。所述条带的材料被构造成承载激子以及等离子体激元,并且所述宽度是波导值的反函数,在所述波导值处,所述材料中的等离子体激元的能级基本上等于所述材料中的激子的能级。条带中的等离子体激元和激子的基本相等的能量引起条带中的本征等离子体激元‑激子极化子(IPEP)的激发。第一接触体电耦合到条带上的第一位置,并且第二接触体电耦合到条带上的第二位置。
9
CN112352323A
激光剥离掩模
Public
Publication/Patent Number: CN112352323A Publication Date: 2021-02-09 Application Number: 201980040585.0 Filing Date: 2019-07-30 Inventor: D·布罗多塞努   D·玛索布雷   J·斯玛尔   A·o·托伦特斯   P·j·休格斯   Assignee: 脸谱科技有限责任公司   IPC: H01L33/00 Abstract: 公开了与激光剥离掩模有关的技术。在一些实施例中,将掩蔽材料施加到与多个半导体器件集合附接的基板。更具体地,将掩蔽材料施加到基板的在半导体器件集合之间的一个或多个区域。当半导体器件集合被嵌入在填充材料中时,掩蔽材料可以位于基板与填充材料之间。因此,使光朝向半导体器件集合透射穿过基板使得基板变为与半导体器件集合脱离。然而,光至少部分地被掩蔽材料遮挡。
10
US10916679B2
Optical device wafer processing method
Publication/Patent Number: US10916679B2 Publication Date: 2021-02-09 Application Number: 16/546,955 Filing Date: 2019-08-21 Inventor: Koyanagi, Tasuku   Assignee: DISCO CORPORATION   IPC: H01L33/00 Abstract: An optical device wafer processing method for transferring an optical device layer of an optical device wafer onto a transfer member includes: a dividing groove forming step of forming dividing grooves in a buffer layer; a transfer member joining step of joining the transfer member to a front surface of the optical device layer; and a laser beam applying step of applying a pulsed laser beam from a back surface side of a crystalline substrate. In the laser beam applying step, the buffer layer, or the buffer layer and part of the optical device layer, left without being divided in the dividing groove forming step, are modified in nature.
11
US2021050476A1
OPTOELECTRONIC DEVICE MANUFACTURING METHOD
Publication/Patent Number: US2021050476A1 Publication Date: 2021-02-18 Application Number: 16/991,857 Filing Date: 2020-08-12 Inventor: Benaissa, Lamine   Rabarot, Marc   Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives   IPC: H01L33/00 Abstract: A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.
12
CN112382706A
一种用于半导体发光元件的加工设备
Public
Publication/Patent Number: CN112382706A Publication Date: 2021-02-19 Application Number: 202011270464.6 Filing Date: 2020-11-13 Inventor: 吴炜强   Assignee: 吴炜强   IPC: H01L33/00 Abstract: 本发明公开了一种用于半导体发光元件的加工设备,具体涉及半导体元件加工技术领域,包括工作台和支脚,所述工作台底端的四个拐角处设置有支脚,所述工作台的顶端设置有加工台,所述加工台的底端和工作台之间设置有旋转机构。本发明通过设置有安装座、滤网、负压风机和集屑箱,加工区域常有加工碎屑飘散,落在工作台顶端,清理时需关停设备,影响加工效率的同时也加大了操作人员的工作量,因此设置有负压风机,启动负压风机,工作台顶端的碎屑从预留槽中被吸入集屑箱内部,滤网防止碎屑渗入负压风机,这样就实现了在加工的同时自动除去工作区域碎屑,长期使用滤网易堵塞,此时只需横向将滤网从安装座中抽出即可清洗更换,快速便捷。
13
US2021057604A1
METHOD OF MANUFACTURING AN ELECTRONIC DEVICE
Publication/Patent Number: US2021057604A1 Publication Date: 2021-02-25 Application Number: 16/965,473 Filing Date: 2018-12-27 Inventor: Ko, Seok Nam   Ahn, Do Yeol   Yang, Seung Hyun   Assignee: PETALUX INC.   IPC: H01L33/00 Abstract: A method of manufacturing an electronic device according to the present invention, comprises: preparing a substrate; forming an n-type semiconductor including a III-V compound semiconductor or a II-VI compound semiconductor material on the substrate; forming a metal thin film including at least one of copper (Cu), silver (Ag), gold (Au), titanium (Ti), and nickel (Ni) on the n-type semiconductor; and forming a p-type semiconductor on the n-type semiconductor by iodinizing the metal thin film using any one of liquid iodine (I), solid iodine (I), and gas iodine (I). Therefore, it is possible to overcome the limitation of the light emission efficiency of the p-type semiconductor by providing a hybrid type electronic device and a manufacturing method.
14
CN110676355B
发光元件的制作方法
Grant
Publication/Patent Number: CN110676355B Publication Date: 2021-02-26 Application Number: 201910870352.5 Filing Date: 2019-09-16 Inventor: 何金原   吴宗典   刘竹育   Assignee: 友达光电股份有限公司   IPC: H01L33/00 Abstract: 一种发光元件的制作方法,包括以下步骤。于生长基板上依序形成第一半导体层、发光层及第二半导体层。形成牺牲层于第二半导体层上。于牺牲层形成开口以暴露出第二半导体层的一部分,其中开口的侧壁与第二半导体层构成倾斜角,且倾斜角的角度范围位于45°至90°之间。形成第一键结层且其凸部重叠开口。提供承载基板。形成第二键结层并接合第二键结层及第一键结层。形成第一图案化半导体层以及第二图案化半导体层。移除牺牲层以露出凸部及接触凸部的第一绝缘层的部分形成的接合部。接合部接触第二图案化半导体层。
15
CN109671813B
一种GaN基发光二极管外延片及其制备方法
Grant
Publication/Patent Number: CN109671813B Publication Date: 2021-01-12 Application Number: 201811320218.X Filing Date: 2018-11-07 Inventor: 张志刚   刘春杨   董彬忠   胡加辉   李鹏   Assignee: 华灿光电(浙江)有限公司   IPC: H01L33/06 Abstract: 本发明公开了一种GaN基发光二极管外延片及其制备方法,属于GaN基发光二极管技术领域。所述发光二极管外延片包括:衬底、在所述衬底上顺次沉积的缓冲层、非掺杂GaN层、N型GaN层、低温应力释放层、多量子阱层、电子阻挡层、P型GaN层、以及P型欧姆接触层,所述多量子阱层包括若干层叠的阱垒层,所述阱垒层包括顺次层叠的InGaN发光阱层、发光阱保护层、以及GaN垒层,靠近所述电子阻挡层的阱垒层中的GaN垒层与所述电子阻挡层接触,所述发光阱保护层包括AlInN层,所述InGaN发光阱层为低温InGaN发光阱层,所述发光阱保护层为中温发光阱保护层,所述GaN垒层为高温GaN垒层。
16
US2021028331A1
PROTECTION LAYER AND METHOD FOR MAKING THE SAME
Publication/Patent Number: US2021028331A1 Publication Date: 2021-01-28 Application Number: 16/932,829 Filing Date: 2020-07-20 Inventor: Ting, Chao-cheng   Kuo, Hao-chung   Assignee: TING, CHAO-CHENG   KUO, HAO-CHUNG   IPC: H01L33/44 Abstract: A protection layer for use in fabrication of failure analysis (FA) sample is disclosed, which principally comprises a first thin film, a buffer thin film and a second thin film By forming the protection layer on a surface of a malfunction device die, a FA sample of the malfunction device die is obtained. As a result, in the case of treating the sample with a FIB thinning process, there are no cracks, distortion, and/or collapse resulted from inter-elemental isobaric interferences, stress effect or charge accumulation occurring on the surface layer of the malfunction device die because of the protection of the protection layer. On the other hand, this protection layer can also be applied to a microLED element or a VCSEL element, so as to make microLED element and the VCSEL element possess excellent stress withstanding capability.
17
CN112234124A
一种改善LED芯片多金异常的方法
Substantial Examination
Publication/Patent Number: CN112234124A Publication Date: 2021-01-15 Application Number: 202011187705.0 Filing Date: 2020-10-30 Inventor: 王克来   白继锋   徐培强   张银桥   王向武   潘彬   Assignee: 南昌凯迅光电有限公司   IPC: H01L33/00 Abstract: 本发明公开了一种改善LED芯片多金异常的方法,该方法包括:使用负性光刻胶均匀的覆盖在晶片表面,利用暗场掩膜板进行曝光,显影后将发光区的金属蚀刻干净,去除光刻胶后即可得到电极完整、发光区洁净的芯片。本发明可以从根本上消除LED芯片多金异常的出现,提高芯片的良率和生产效率。
18
CN112242464A
一种具有空穴蓄积结构的深紫外LED及其制备方法
Substantial Examination
Publication/Patent Number: CN112242464A Publication Date: 2021-01-19 Application Number: 202011052851.2 Filing Date: 2020-09-29 Inventor: 张骏   岳金顺   梁仁瓅   Assignee: 苏州紫灿科技有限公司   IPC: H01L33/14 Abstract: 本发明公开了一种具有空穴蓄积结构的深紫外LED及其制备方法,所述具有空穴蓄积结构的深紫外LED由下至上依次设置有蓝宝石衬底、AlN本征层、n型AlGaN电子注入层、电流扩展层、量子阱有源层、空穴蓄积层、电子阻挡层、p型AlGaN空穴注入层和p型GaN接触层;所述空穴蓄积层为Mg掺杂的单层AlGaN结构,生长温度为600~1000℃。本发明通过在量子阱有源层与电子阻挡层之间增加单层结构的空穴蓄积层,在提高电子阻挡层等效势垒高度的同时,提高注入到量子阱有源区中的空穴浓度,最终提高深紫外LED器件的发光效率。
19
CN112397624A
一种GaAs基LED晶片GaP粗糙表面的制作方法
Publication/Patent Number: CN112397624A Publication Date: 2021-02-23 Application Number: 201910758889.2 Filing Date: 2019-08-16 Inventor: 徐晓强   张兆喜   王梦雪   闫宝华   徐现刚   Assignee: 山东浪潮华光光电子股份有限公司   IPC: H01L33/22 Abstract: 本发明公开了一种GaAs基LED晶片GaP粗糙表面的制作方法,首先进行晶片外延层的制备,随即在外延层的GaP窗口层上进行粗化腐蚀,利用表面活性剂将光刻胶、粗化腐蚀液溶解在一起,形成具有粗化腐蚀效果的腐蚀溶胶,再将腐蚀溶胶涂覆在GaP窗口层表面,在40‑60℃温度下恒温烘烤,再利用丙酮等溶剂去除腐蚀膜层和二氧化硅层,继续制备得到独立管芯;本发明设计的工艺方法简单易操作,不需要引入特殊设备,利用较低的成本,外延层表面的粗化腐蚀更加均匀,腐蚀可控性较高,粗化效果好,解决了目前使用溶液进行粗化腐蚀较难控制且粗化亮度提升不高的难题,通过本发明提供的方法进行粗化制作,出光效率可以提升25‑30%,具有较高的实用性。
20
CN112331745A
发光二极管外延片制备方法
Substantial Examination
Publication/Patent Number: CN112331745A Publication Date: 2021-02-05 Application Number: 202011161745.8 Filing Date: 2020-10-27 Inventor: 刘旺平   梅劲   刘春杨   张武斌   葛永晖   Assignee: 华灿光电(苏州)有限公司   IPC: H01L33/00 Abstract: 本公开提供了发光二极管外延片制备方法,属于发光二极管制作领域。在氧气氛围下进行第一次退火,Mg‑H络合物可以与氧气发生反应使Mg‑H键断裂,Mg‑H络合物中的H则可以与氧气反应生成HO排出,也可以减少残留在p型层内除氮化物本身材料及Mg原子之外的其他杂质元素。升温后在氮气环境下进行第二次退火,减小p型层内Mg‑H络合物的同时进一步提高p型层的晶体质量,Mg原子在p型层内可以自由活动并主要作为受主杂质,有效增加p型层内的空穴浓度,也可以促使p型层内空穴快速流动,最终进入发光层的空穴数量增多,发光二极管外延片内的非辐射数量也会减少部分,最终得到的发光二极管的发光效率也得到提高。
Total 500 pages