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1
CN112310810A
一种半导体激光发射器
Public
Publication/Patent Number: CN112310810A Publication Date: 2021-02-02 Application Number: 202011200779.3 Filing Date: 2020-11-02 Inventor: 雷述宇   Assignee: 宁波飞芯电子科技有限公司   IPC: H01S5/183 Abstract: 本发明提供一种半导体激光器,其特征在于,包括:第一DBR层,第二DBR层,配置于所述第一DBR层与所述第二DBR层之间的量子阱有源区;还包含降低寄生电容特性的出光限制孔,本发明将现有技术的氧化限制孔变换为降低寄生电容特性的出光限制孔,例如采用空气、氮气等等气体作为出光限制孔的填充材料,如此通过与现有技术的氧化限制孔相比,本发明材料的介电常数仅为氧化物的1/4,因此按照寄生电容的计算公式,通过本发明的方案可以从最底层的设计中在相同的限制孔尺寸下将氧化限制孔的寄生电容减小为原来的1/4,这样对于TOF激光测距中的需要高功率和快的调制速率场景适应将非常有用。
2
US2021091537A1
HIGH-POWER VERTICAL CAVITY SURFACE EMITTING LASER DIODE (VCSEL)
Publication/Patent Number: US2021091537A1 Publication Date: 2021-03-25 Application Number: 17/029,177 Filing Date: 2020-09-23 Inventor: Huang, Chao-hsing   Chin, Yu-chung   Dai, Van-truong   Assignee: VISUAL PHOTONICS EPITAXY CO., LTD.   IPC: H01S5/183 Abstract: Provided is a high-power vertical cavity surface emitting laser diode (VCSEL), including a first epitaxial region, an active region and a second epitaxial region. One of the first epitaxial region and the second epitaxial region is an N-type epitaxial region, and the other of the first epitaxial region and the second epitaxial region includes a PN junction. The PN junction includes a P-type epitaxial layer, a tunnel junction and an N-type epitaxial layer. The tunnel junction is located between the P-type epitaxial layer and the N-type epitaxial layer, and the P-type epitaxial layer of the PN junction is closest to the active region.
3
CN109478767B
VCSEL照明器封装
Grant
Publication/Patent Number: CN109478767B Publication Date: 2021-03-16 Application Number: 201780043770.6 Filing Date: 2017-05-25 Inventor: 同·陈   丘尼·高希   青·王   阿列克谢·科夫什   劳伦斯·沃特金斯   Assignee: 普林斯顿光电子股份有限公司   IPC: H01S5/183 Abstract: 一种VCSEL照明器模块包含形成物理腔的模块,所述物理腔具有定位于所述模块的内表面上的电触点,所述电触点通过所述模块馈通到定位于所述模块的外表面上的电触点。VCSEL装置定位于内表面模块上,且包含电连接到所述模块的所述内表面上的所述电触点的电触点。当电流施加于所述电触点时所述VCSEL装置产生光学光束。光学元件邻近于所述VCSEL装置的发射表面定位,且被配置成修改由所述VCSEL装置产生的所述光学光束。
4
US2021111538A1
SEMICONDUCTOR MULTILAYER FILM REFLECTING MIRROR AND VERTICAL CAVITY LIGHT-EMITTING ELEMENT
Publication/Patent Number: US2021111538A1 Publication Date: 2021-04-15 Application Number: 16/498,385 Filing Date: 2018-03-13 Inventor: Takeuchi, Tetsuya   Akasaki, Isamu   Kiyohara, Kazuki   Takizawa, Masaru   Liang, Ji-hao   Assignee: MEIJO UNIVERSITY   STANLEY ELECTRIC CO., LTD.   IPC: H01S5/183 Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
5
CN112219327A
氧化物间隔HCG VCSEL及其制造方法
Substantial Examination
Publication/Patent Number: CN112219327A Publication Date: 2021-01-12 Application Number: 201980030047.3 Filing Date: 2019-05-10 Inventor: 常瑞华   凯文·t·库克   祁继鹏   王嘉星   Assignee: 加利福尼亚大学董事会   IPC: H01S5/183 Abstract: 高对比度光栅(HCG)结构和制造方法。HCG的光栅形成在结构间隔层上,使得在光栅元件下方的空气间隔上进行制造时允许较宽范围的缺乏结构支撑的光栅图案,如柱和其他形式。该技术涉及蚀刻HCG光栅,然后穿过该HCG将光栅氧化成在其下方的氧化物间隔层,从而在该光栅下方形成低折射率区域。这种形式的HCG反射器能够被用作在制造垂直腔面发射激光器(VCSEL)中的上反射器和/或下反射器。
6
EP3017515B1
WAVELENGTH-TUNABLE VERTICAL CAVITY SURFACE EMITTING LASER FOR SWEPT SOURCE OPTICAL COHERENCE TOMOGRAPHY SYSTEM
Publication/Patent Number: EP3017515B1 Publication Date: 2021-01-06 Application Number: 14819362.6 Filing Date: 2014-07-01 Inventor: Makino, Toshihiko   Li, Tongning   Eu, David   Assignee: Inphenix, Inc.   IPC: H01S5/183
7
CN109672087B
垂直腔面发射激光器及其制作方法
Grant
Publication/Patent Number: CN109672087B Publication Date: 2021-01-08 Application Number: 201910132184.X Filing Date: 2019-02-22 Inventor: 李伟   刘素平   马骁宇   Assignee: 中国科学院半导体研究所   IPC: H01S5/183 Abstract: 一种垂直腔面发射激光器及其制作方法,垂直腔面发射激光器包括:一外延结构,该外延结构自下而上包含:N面电极、N型衬底、N型DBR、有源区、以及P型DBR;多个台面结构,由该外延结构表面向下刻蚀至N型DBR表面或内部一设定深度得到;其中,多个台面结构沿着出光孔径轴线呈环形密堆积分布,在多个台面结构之间存在绝缘介质膜实现各个台面结构之间的电气隔离,该绝缘介质膜的光学厚度为四分之一波长奇数倍;多个台面结构之间通过覆盖于绝缘介质膜之上的P面电极实现交相互连和电流注入。能够同时实现大口径范围内光功率密度均匀分布、输出模式稳定、和高质量光束输出,且与现有垂直腔面发射激光器制备工艺兼容,制备工艺简单、重复性好及成本低。
8
EP3761464A1
SEGMENTED VERTICAL CAVITY SURFACE EMITTING LASER
Publication/Patent Number: EP3761464A1 Publication Date: 2021-01-06 Application Number: 20184734.0 Filing Date: 2018-12-06 Inventor: Moench, Holger Joachim   Gronenborn, Stephan   Assignee: TRUMPF Photonic Components GmbH   IPC: H01S5/183 Abstract: The invention a Vertical Cavity Surface Emitting Laser device (100). The Vertical Cavity Surface Emitting Laser device (100) comprises a first electrical contact (105), a substrate (110), a second electrical contact (135) and an optical resonator. The optical resonator is arranged on a first side of the substrate (110). The optical resonator comprises a first reflecting structure comprising a first distributed Bragg reflector (115), a second reflecting structure comprising a second distributed Bragg reflector (130), an active layer (120) arranged between the first reflecting structure and the second reflecting structure and a guiding structure (132). The guiding structure (132) is arranged within a layer stack of the first distributed Bragg reflector (115) or the second distributed Bragg reflector (130). The guiding structure (132) configured to provide a lateral variation of a reflectivity of the first reflecting structure or the second reflecting structure parallel to the active layer (120), wherein the guiding structure (132) is configured to define a first relative intensity maximum of an intensity distribution within the active layer (120) at a first lateral position of the optical resonator such that a first light emitting area (124) is provided, and at least a second relative intensity maximum of the intensity distribution within the active layer (120) at a second lateral position of the optical resonator such that second light emitting area (124) is provided, wherein the guiding structure (132) is further configured to reduce an intensity of the intensity distribution in between the at least two light-emitting areas (124) during operation of the Vertical Cavity Surface Emitting Laser device (100), wherein the guiding structure (132) comprises oxidized regions within at least one layer of the first distributed Bragg reflector (115) or the second distributed Bragg reflector (130), wherein the oxidized region are arranged to reduce the intensity in between the light-emitting areas (124). The invention further describes the optical sensor (300) comprising such a Vertical Cavity Surface Emitting Laser device (100), a mobile communication device (380) comprising such an optical sensor (300) and a method of fabricating the Vertical Cavity Surface Emitting Laser device (100).
9
CN112186503A
一种垂直腔面发射激光器及其制作方法
Substantial Examination
Publication/Patent Number: CN112186503A Publication Date: 2021-01-05 Application Number: 202011131416.9 Filing Date: 2020-10-21 Inventor: 佟存柱   佟海霞   汪丽杰   王延靖   陆寰宇   田思聪   王立军   Assignee: 中国科学院长春光学精密机械与物理研究所   IPC: H01S5/183 Abstract: 本申请公开了一种垂直腔面发射激光器,包括电流限制层、p面电极、n面电极、由下至上依次层叠的衬底、第一掺杂层、第一反射层、有源层、第二掺杂层、第二反射层,所述电流限制层中的电流孔与所述n面电极的距离小于所述电流孔与所述p面电极的距离。本申请的垂直腔面发射激光器中,电流孔与n面电极的距离小于电流孔与p面电极的距离,即电流孔偏向n面电极,电流由p面电极流入,增大了横向电流路径,有效减小垂直腔面发射激光器的电流拥堵效应,使电流更加均匀的进入有源区层。此外,本申请还提供一种具有上述优点的垂直腔面发射激光器制作方法。
10
US2021036490A1
SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING THE SAME
Publication/Patent Number: US2021036490A1 Publication Date: 2021-02-04 Application Number: 16/922,336 Filing Date: 2020-07-07 Inventor: Kumano, Tetsuya   Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.   IPC: H01S5/183 Abstract: A surface-emitting laser includes a substrate, a lower reflector layer disposed on the substrate, an active layer disposed on the lower reflector layer, and an upper reflector layer disposed on the active layer. The lower reflector layer, the active layer, and the upper reflector layer form a mesa. The mesa has a current confinement structure. The current confinement structure includes a current confinement layer. The current confinement layer includes an oxide layer extending from a periphery of the mesa and an aperture surrounded by the oxide layer. The aperture overlaps the active layer. The aperture has a major axis and a minor axis. A length of the major axis is twice or more a length of the minor axis.
11
US2021091538A1
VCSEL WITH SELF-ALIGNED MICROLENS TO IMPROVE BEAM DIVERGENCE
Publication/Patent Number: US2021091538A1 Publication Date: 2021-03-25 Application Number: 16/579,692 Filing Date: 2019-09-23 Inventor: Chen, Jhih-bin   Liu, Ming Chyi   Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.   IPC: H01S5/183 Abstract: In some embodiments, the present disclosure relates to a vertical cavity surface emitting laser (VCSEL) device that includes a microlens arranged over a reflector stack. The reflector stack comprises alternating reflector layers of a first material and a second material. The microlens stack includes a first lens layer, a second lens layer arranged over the first lens layer, and a third lens layer arranged over the second lens layer. The first lens layer comprises a first average concentration of a first element and has a first width. The second lens layer comprises a second average concentration of the first element greater than the first average concentration and has a second width smaller than the first width. The third lens layer comprises a third average concentration of the first element greater than the second average concentration and has a third width smaller than the second width.
12
CN112567580A
低发散垂直腔表面发射激光器及结合其的模块和主机装置
Public
Publication/Patent Number: CN112567580A Publication Date: 2021-03-26 Application Number: 201980053498.9 Filing Date: 2019-08-13 Inventor: 让-弗朗西斯.苏仁   Assignee: ams传感器亚洲私人有限公司   IPC: H01S5/183 Abstract: 本公开描述一种可操作以产生非常窄发散光束的VCSEL。可部分通过结合额外外延层以增加VCSEL的腔长度来获得窄发散光束。增加的腔长度可导致更高的功率、更少的较大直径横向模式,其可显著减少输出光束发散。额外外延层可结合至(例如)顶部发射VCSEL或底部发射VCSEL中。
13
CN112544021A
半导体激光光束整形器
Substantial Examination
Publication/Patent Number: CN112544021A Publication Date: 2021-03-23 Application Number: 201980044445.0 Filing Date: 2019-07-08 Inventor: 巴布·达亚尔·巴多拉帕斯   Assignee: 厦门市三安集成电路有限公司   IPC: H01S5/183 Abstract: 一种半导体激光光束整形器,包括VCSEL装置及透镜件。该VCSEL装置包括基材、第一型及第二型掺杂分布式布拉格反射器、主动层、表面浮雕层、限制件,及第一及第二电极。该表面浮雕层形成在该第二型掺杂分布式布拉格反射器中并具有等于N*λ/4n的厚度,其中,λ是利用该主动层所产生的激光光束的波长、n是该表面浮雕层的折射率,且N是不小于3的正整数。该限制件界定具有贯孔宽度的贯孔。该透镜件具有大于该贯孔宽度的透镜宽度。该VCSEL装置具有台面结构。
14
CN111799654B
一种激光器及其制造方法与应用
Grant
Publication/Patent Number: CN111799654B Publication Date: 2021-01-22 Application Number: 202010938154.0 Filing Date: 2020-09-09 Inventor: 张成   梁栋   刘嵩   Assignee: 常州纵慧芯光半导体科技有限公司   IPC: H01S5/183 Abstract: 本发明提出一种激光器及其制造方法与应用,包括:提衬底,包括相对设置的第一表面和第二表面;反射层,位于所述第二表面上;至少一台型结构,位于所述反射层上;其中,所述台型结构包括至少两个有源层和第一材料层;多个凹槽,位于所述第一材料层上;第二材料层,位于所述第一材料层上,且填充所述多个凹槽;其中,所述第一材料层的折射率大于所述第二材料层的折射率;其中,所述至少两个有源层之间设置有隧道结,所述有源层包括第一半导体层,有源区和第二半导体层。本发明提出的激光器可以提高电流的注入效率。
15
EP3764490A1
SURFACE-EMITTING LASER
Publication/Patent Number: EP3764490A1 Publication Date: 2021-01-13 Application Number: 19763697.0 Filing Date: 2019-02-07 Inventor: Arakida, Takahiro   Kimura, Takayuki   Yoshida, Yuuta   Assignee: Sony Semiconductor Solutions Corporation   IPC: H01S5/183 Abstract: A surface emitting laser according to an embodiment of the present disclosure includes an active layer, a first DBR layer and a second DBR layer sandwiching the active layer, and a dielectric layer and a reflection metal layer corresponding to a terminal end of a reflecting mirror on a side of the second DBR layer when viewed from the active layer.
16
CN112332216A
预离子布植的垂直腔面发射激光器的制作方法
Substantial Examination
Publication/Patent Number: CN112332216A Publication Date: 2021-02-05 Application Number: 202011362089.8 Filing Date: 2020-11-27 Inventor: 方照诒   郭浩中   潘德烈   Assignee: 北京金太光芯科技有限公司   IPC: H01S5/183 Abstract: 本发明提供一种预离子布植的垂直腔面发射激光器的制作方法,至少包括基底、第一反射镜层、主动区和第二反射镜层,制作方法包括:根据预先在所述第一反射镜层中标定的所述离子布植区域将离子布植到所述第一反射镜层中;在离子布植后,继续在所述第一反射镜层上进行二次外延生长,从而生成所述垂直腔面发射激光器;或,根据预先在所述第一反射镜层中标定的所述离子布植区域将离子布植到预先生成的部分垂直腔面发射激光器;在离子布植后,继续在生成的部分垂直腔面发射激光器上进行二次外延生长,从而所述垂直腔面发射激光器。
17
US2021028603A1
A SURFACE-EMITTING LASER DEVICE AND LIGHT EMITTING DEVICE INCLUDING THE SAME
Publication/Patent Number: US2021028603A1 Publication Date: 2021-01-28 Application Number: 17/043,144 Filing Date: 2019-04-04 Inventor: Lee, Jeong Sik   Han, Sang Heon   Park, Keun Uk   Yoon, Yeo Jae   Assignee: LG INNOTEK CO., LTD.   IPC: H01S5/183 Abstract: A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.
18
US2021050711A1
VCSEL WITH DOUBLE OXIDE APERTURES
Publication/Patent Number: US2021050711A1 Publication Date: 2021-02-18 Application Number: 16/992,936 Filing Date: 2020-08-13 Inventor: Shi, Hanxing   Dubey, Richa   Gazula, Deepa   Kocot, Chris   Roxlo, Charles   Assignee: FINISAR CORPORATION   IPC: H01S5/183 Abstract: In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.
19
CN112366519A
高对比度光栅垂直腔面发射激光器及制造方法
Substantial Examination
Publication/Patent Number: CN112366519A Publication Date: 2021-02-12 Application Number: 202011265127.8 Filing Date: 2020-11-12 Inventor: 张穗   乔鹏飞   沈志强   Assignee: 深圳博升光电科技有限公司   IPC: H01S5/183 Abstract: 本申请公开了一种高对比度光栅垂直腔面发射激光器及制造方法,高对比度光栅垂直腔面发射激光器,包括层叠设置的第一反射器层、有源层、第二反射器层和光栅层;所述光栅层具有光栅槽,所述光栅槽自所述光栅层背离所述有源层一侧,至少延伸至所述光栅层的内部。光栅槽至少延伸至光栅层的内部,也即光栅槽的深度可以在光栅层至第二反射器层内部之间均可,因此提高了制作的容忍度。在光栅槽刻蚀深度较浅时,其所用的刻蚀时间较短,可以提高生产效率,不同深度光栅槽对应的VCSEL参数不同,由于光栅槽刻蚀深度的多样性,相应地扩大了光栅以及VCSEL设计参数的调节范围,也提高制作的容忍度和良率,提供了制成方式的多样性。
20
CN112436379A
垂直腔面发射激光器
Substantial Examination
Publication/Patent Number: CN112436379A Publication Date: 2021-03-02 Application Number: 202011262836.0 Filing Date: 2020-11-12 Inventor: 张穗   乔鹏飞   沈志强   Assignee: 深圳博升光电科技有限公司   IPC: H01S5/183 Abstract: 本申请公开了一种垂直腔面发射激光器,包括:层叠设置的第一反射器层、有源层、第二反射器层;所述第二反射器层上设置有第一光栅槽,所述第一光栅槽自所述第二反射器层背离所述有源层的表面,延伸至所述第二反射器层内部。上述方案,通过在该垂直腔面发射激光器的某一或某几层刻蚀光栅槽,使刻蚀光栅槽的位置形成高对比度光栅,该高对此度光栅可以减小垂直腔面发射激光器的发散角,提高能量集中及使垂直腔面发射激光器发射的激光为偏振光。
Total 500 pages