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No. Publication Number Title Publication/Patent Number Publication/Patent Number Publication Date Publication Date
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1
CN112262569A
图像传感器
Public
Publication/Patent Number: CN112262569A Publication Date: 2021-01-22 Application Number: 201980039016.4 Filing Date: 2019-06-12 Inventor: 安德鲁·斯科特   Assignee: 英国研究与创新组织   IPC: H04N5/3745 Abstract: 本公开涉及有源像素传感器,诸如CMOS传感器。各个像素的采样级可以包括串联在缓冲放大器与存储节点之间的第一采样开关和第二采样开关。第一采样开关连接到列采样线,并且第二采样开关连接到行采样线,使得曝光信号仅在列采样信号和行采样信号都处于活跃状态时才传递到存储节点。
2
EP3808072A1
IMAGE SENSOR
Publication/Patent Number: EP3808072A1 Publication Date: 2021-04-21 Application Number: 19732092.2 Filing Date: 2019-06-12 Inventor: Scott, Andrew   Assignee: United Kingdom Research and Innovation   IPC: H04N5/3745
3
EP3833008A1
ACTIVE PIXEL SENSOR ARRAY, DISPLAY PANEL AND ELECTRONIC DEVICE
Publication/Patent Number: EP3833008A1 Publication Date: 2021-06-09 Application Number: 20180608.0 Filing Date: 2020-06-17 Inventor: Cheng, Chih-jen   Assignee: Beijing Xiaomi Mobile Software Co., Ltd.   IPC: H04N5/3745 Abstract: A active pixel sensor array includes plurality of pixel circuits arranged in multiple rows and one column or multiple rows and multiple columns, each pixel circuit including: photoelectric conversion sub-circuit; resetting sub-circuit for resetting photoelectric conversion sub-circuit based on reset signal; source following sub-circuit connected between resetting sub-circuit and photoelectric conversion sub-circuit; strobing sub-circuit connected to source following sub-circuit and for switching on/off state based on strobe signal; and pre-discharging sub-circuit with one terminal connected between source following sub-circuit and strobing sub-circuit, and for switching on/off state based on received pre-discharge signal; when pixel circuits are arranged in multiple rows and columns, on time and off time of strobing sub-circuit in same row are same, and on time of strobing sub-circuit in each row is same as that of pre-discharging sub-circuit in next row, and off time of strobing sub-circuit is same as that of pre-discharging sub-circuit in next row.
4
CN112400313A
用于检测时变图像数据的单元阵列
Substantial Examination
Publication/Patent Number: CN112400313A Publication Date: 2021-02-23 Application Number: 201980046619.7 Filing Date: 2019-07-04 Inventor: 李成汉   Assignee: 英尼维顺股份有限公司   IPC: H04N5/3745 Abstract: 本发明涉及用于检测时变图像数据的光电阵列,其包括多个设备单元(1)的阵列,其中每个设备单元(1)包括光电传感器(2)的组(12),每个光电传感器(2)配置为根据所述光电传感器(2)上的光强度生成模拟传感器信号,对于每个光电传感器(2),像素编码电路配置为将由所述光电传感器(2)产生的模拟传感器信号转换为来自所述光电传感器(2)的数字像素信息,以及处理单元(13),其包括关联逻辑(3),所述关联逻辑(3)配置为关联来自光电传感器(2)的所述组(12)的光电传感器(2)的所述像素信息,并作为结果产生指示所述单元(1)包含要读取的像素信息的请求信号和/或产生在处理单元(13)中利用的直通信号,使得发送包含在所述单元(1)中的像素信息。
5
CN112585954A
固态成像元件与成像装置
Public
Publication/Patent Number: CN112585954A Publication Date: 2021-03-30 Application Number: 201980054348.X Filing Date: 2019-10-15 Inventor: 丹羽笃亲   Assignee: 索尼半导体解决方案公司   IPC: H04N5/3745 Abstract: 在检测地址事件的存在或缺失的该固态成像元件中,降低了图像捕获期间所消耗的功率。固态成像元件具有多个像素和模数转换单元。在固态成像元件中,多个像素中的每个像素通过光电转换而生成模拟信号。进一步地,在固态成像元件中,模数转换单元将其入射光的变化量在规定范围之外的这些多个像素的模拟信号转换成数字信号。
6
US2021051289A1
METHOD AND SYSTEM FOR REDUCING THERMAL SHADING IN IMAGE SENSOR USING ON CHIP LOCALIZED HEAT SOURCE
Publication/Patent Number: US2021051289A1 Publication Date: 2021-02-18 Application Number: 16/994,294 Filing Date: 2020-08-14 Inventor: Chowdhury, Ankush   Lalam, Ramana Babu   Rupapara, Prashant Govindlal   Anand, Rohan   Assignee: SAMSUNG ELECTRONICS CO., LTD.   IPC: H04N5/3745 Abstract: A method for reducing thermal shading in a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The method includes: detecting one or more regions in a CMOS image sensor in which thermal shading occurs, the CMOS image sensor including a plurality of heating elements in a chip; automatically switching a subset of the plurality of heating elements to turn on based on the detected one or more regions; and automatically switching the subset of the plurality of heating elements to turn off in an active power consumption phase of the CMOS image sensor.
7
CN112913224A
固态成像元件和成像装置
Public
Publication/Patent Number: CN112913224A Publication Date: 2021-06-04 Application Number: 201980070276.8 Filing Date: 2019-10-15 Inventor: 丹羽笃亲   Assignee: 索尼半导体解决方案公司   IPC: H04N5/3745 Abstract: 在这种用于检测地址事件的存在与否的固态成像元件中,当进一步捕获图像数据时,减少了AD转换所需的时间。通过光电转换生成第一模拟信号的第一像素和通过光电转换生成第二模拟信号的第二像素设置在检测块中。第一模数转换器基于入射到检测块上的光量的变化量是否超过规定的阈值,将第一模拟信号转换成数字信号。第二模数转换器基于所述变化量是否超过阈值将第二模拟信号转换成数字信号。
8
CN107370970B
固态成像器件、相机模块以及电子设备
Grant
Publication/Patent Number: CN107370970B Publication Date: 2021-03-09 Application Number: 201710397717.8 Filing Date: 2012-08-22 Inventor: 加藤菜菜子   若野寿史   山本敦彦   Assignee: 索尼公司   IPC: H04N5/3745 Abstract: 本发明提供固态成像器件、相机模块和电子设备。所述器件包括:第一光接收单元,包括第一四个光电转换元件、第一四个转移晶体管以及由第一四个转移晶体管共享的第一浮置扩散区域,第一四个转移晶体管中的相应晶体管连接至第一四个光电转换元件中的相应元件;第二光接收单元,包括第二四个光电转换元件、第二四个转移晶体管以及由第二四个转移晶体管共享且连接至第一浮置扩散区域的第二浮置扩散区域,第二四个转移晶体管中的相应晶体管连接至第二四个光电转换元件中的相应元件;共享晶体管,连接至第一和第二浮置扩散区域并且包括第一和第二选择晶体管;以及信号线,连接至共享晶体管以基于第一和第二四个光电转换元件中的至少一个的输出而转移信号。
9
EP3821593A1
DIGITAL PIXEL IMAGER WITH DUAL BLOOM STORAGE CAPACITORS
Publication/Patent Number: EP3821593A1 Publication Date: 2021-05-19 Application Number: 19745829.2 Filing Date: 2019-06-28 Inventor: Cantrell, Joshua J.   Assignee: RAYTHEON COMPANY   IPC: H04N5/3745
10
US2021006212A1
AMPLIFICATION CIRCUIT, IMAGING DEVICE, AND CONTROL METHOD OF AMPLIFICATION CIRCUIT
Publication/Patent Number: US2021006212A1 Publication Date: 2021-01-07 Application Number: 16/971,997 Filing Date: 2018-12-04 Inventor: Watanabe, Shinichi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H03F3/16 Abstract: A decline in image quality that is caused by a variation of a gain in an amplification circuit is suppressed. The amplification circuit includes an amplification transistor, a cascode transistor, and a control circuit. The amplification transistor amplifies an input signal. The cascode transistor is configured to, in a case where a drain-source voltage between a drain and a source is higher than a predetermined voltage, supply a substantially-constant drain current to a reference potential line with a predetermined reference potential via the amplification transistor. Further, the control circuit is configured to, in a case where an initialization instruction is issued, control the drain-source voltage to be a value higher than the predetermined voltage.
11
US10950642B2
Image sensor including partition patterns
Publication/Patent Number: US10950642B2 Publication Date: 2021-03-16 Application Number: 16/219,680 Filing Date: 2018-12-13 Inventor: Lee, Kyoung-in   Assignee: SK hynix Inc.   IPC: H01L27/146 Abstract: An image sensor image sensor may include: a substrate; photo-sensing elements formed in the substrate, each photo-sensing element responsive to light to produce a photo-sensing electrical signal; an antireflection layer formed over of the photo-sensing elements and structured to reduce optical reflection to facilitate optical transmission of incident light to the photo-sensing elements through the antireflection layer; color filters formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, each color filter structured to select a designated color in the incident light to transmit through to a corresponding photo-sensing element; and partition patterns formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, to partition light receiving area above the photo-sensing elements into separate light receiving areas, each partition pattern surrounding a corresponding color filter to be separate from an adjacent color filter; grooves formed in upper portions of the partition patterns, and providing air gaps between the adjacent partition patterns; micro lenses formed over the partition patterns and the color filters to direct incident light to the photo-sensing elements through the color filters, respectively. The micro lenses may be separated from one another by the grooves.
12
US2021082979A1
IMAGE SENSOR, MANUFACTURING METHOD THEREOF, AND IMAGE CAPTURING APPARATUS
Publication/Patent Number: US2021082979A1 Publication Date: 2021-03-18 Application Number: 17/022,325 Filing Date: 2020-09-16 Inventor: Kobayashi, Hirokazu   Assignee: CANON KABUSHIKI KAISHA   IPC: H01L27/146 Abstract: An image sensor comprising: a plurality of photoelectric conversion portions that convert light incident on a first surface of a semiconductor substrate into charge; a plurality of circuit portions, controlled from a second surface that is an opposite surface of the first surface of the semiconductor substrate, for transferring the charge converted by the photoelectric conversion portions; and first separation portions that separate the photoelectric conversion portions and the circuit portions for transferring the charge converted by the photoelectric conversion portions. At least part of the first separation portions are formed such that the area of the first surface is larger than the area of the second surface of at least part of the respective photoelectric conversion portions.
13
US2021067168A1
DAC CIRCUIT, SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC EQUIPMENT
Publication/Patent Number: US2021067168A1 Publication Date: 2021-03-04 Application Number: 16/961,565 Filing Date: 2019-01-15 Inventor: Kitano, Shin   Sakakibara, Masaki   Kikuchi, Hidekazu   Osame, Mitsuaki   Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION   IPC: H03M1/56 Abstract: The present technology relates to a DAC circuit, a solid-state imaging element, and electronic equipment that can be achieved with a small-scale circuit configuration. The DAC circuit includes: a ramp DAC that generates a ramp signal that changes in voltage with a constant time gradient; an injection DAC that outputs a predetermined voltage during a reset period for resetting a comparison target voltage to be compared with the ramp signal; and an adding circuit that adds an output of the ramp DAC and an output of the injection DAC and outputs the outputs to a comparison circuit as a comparison reference voltage. The present technology can be applied to, for example, a DAC circuit of a solid-state imaging element, and the like.
14
CN112913222A
传感器和控制方法
Public
Publication/Patent Number: CN112913222A Publication Date: 2021-06-04 Application Number: 201980070007.1 Filing Date: 2019-10-16 Inventor: 高桥裕嗣   Assignee: 索尼半导体解决方案公司   IPC: H04N5/369 Abstract: 本技术涉及一种传感器和控制方法,其使得可以灵活地获取事件数据。构成该传感器的像素块各自包括:一个或多个像素,其接收光并进行光电转换以生成电信号;以及事件检测单元,其检测来自像素的电信号中的变化的事件。在该传感器中,接通/关断多个像素块之间的连接。本技术可以应用于例如用于检测来自像素的电信号中的变化的事件的传感器。
15
EP3777131A1
SYSTEMS AND METHODS FOR ASYNCHRONOUS, TIME-BASED IMAGE SENSING
Publication/Patent Number: EP3777131A1 Publication Date: 2021-02-17 Application Number: 19720626.1 Filing Date: 2019-04-30 Inventor: Finateu, Thomas   Matolin, Daniel   Posch, Christoph   Assignee: Prophesee   IPC: H04N5/3745
16
US2021021782A1
PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM
Publication/Patent Number: US2021021782A1 Publication Date: 2021-01-21 Application Number: 16/917,513 Filing Date: 2020-06-30 Inventor: Sato, Masaki   Saito, Kazuhiro   Itano, Tetsuya   Yamazaki, Kazuo   Kobayashi, Hideo   Nakazawa, Keigo   Assignee: CANON KABUSHIKI KAISHA   IPC: H04N5/3745 Abstract: A photoelectric conversion device includes: pixels forming columns and each configured to output a pixel signal; and comparator units provided to respective columns and each configured to receive the pixel signal from the pixels on a corresponding column and the reference signal. Each comparator unit includes a comparator having a first input node that receives the pixel signal and a second input node that receives the reference signal, a first capacitor that connects a reference signal line and the second input node, a second capacitor whose one electrode is connected to the second input node, and a select unit that connects the other electrode of the second capacitor to either the reference signal line or a reference voltage line. The other electrode of the second capacitor is connected to the reference signal line during first mode AD conversion and connected to the reference voltage line during second mode AD conversion.
17
CN109257548B
一种CMOS图像传感器及图像输出方法
Grant
Publication/Patent Number: CN109257548B Publication Date: 2021-01-29 Application Number: 201810908148.3 Filing Date: 2018-08-10 Inventor: 段杰斌   蒋宇   李琛   Assignee: 上海集成电路研发中心有限公司   成都微光集电科技有限公司   IPC: H04N5/374 Abstract: 本发明公开了一种CMOS图像传感器,包括像素阵列、A/2个列级采样保持电路、列选编码及驱动电路和流水线模数转换器,所述像素阵列包含B行A列像素单元,所述第m列像素单元和第m+1列像素单元共用一个列级采样保持电路,所述A/2个列级采样保持电路连接至所述列选编码及驱动电路,所述列选编码及驱动电路的另一端连接所述流水线模数转换器。本发明提供的一种CMOS图像传感器,在像素单元中增加了开关和电容,并且相邻的两列像素单元共用一个列级采样保持电路,经过一次曝光即可输出一副完整的图像,采用本发明结构可以大幅缩减芯片面积,达到降低芯片成本的效果。
18
US2021037201A1
SCALABLE READOUT INTEGRATED CIRCUIT ARCHITECTURE WITH PER-PIXEL AUTOMATIC PROGRAMMABLE GAIN FOR HIGH DYNAMIC RANGE IMAGING
Publication/Patent Number: US2021037201A1 Publication Date: 2021-02-04 Application Number: 16/887,983 Filing Date: 2020-05-29 Inventor: Tantawy, Ramy   Assignee: SenseICs, Ltd   IPC: H04N5/378 Abstract: An imager device includes a pixel sensor configured to receive and convert incident radiation into a pixel signal and a readout circuit configured to receive the pixel signal from the pixel sensor, generate a received signal strength indicator (RSSI) value based on the pixel signal, and generate a digital signal based on the RSSI value and the pixel signal.
19
US2021051288A1
SOLID-STATE IMAGING DEVICE
Publication/Patent Number: US2021051288A1 Publication Date: 2021-02-18 Application Number: 17/084,583 Filing Date: 2020-10-29 Inventor: Niwa, Atsumi   Assignee: Sony Semiconductor Solutions Corporation   IPC: H04N5/369 Abstract: A mounting area in a solid-state imaging device that detects an address event. The solid-state imaging device includes a light receiving chip and a detection chip. In the solid-state imaging device including the light receiving chip and the detection chip, the light receiving chip includes a photodiode that photoelectrically converts incident light and generates a photocurrent. In addition, in the solid-state imaging device, the detection chip quantizes a voltage signal corresponding to the photocurrent generated by the photodiode in the light receiving chip and outputs the voltage signal as a detection signal.
20
US2021037204A1
IMAGE SENSORS, IMAGE PROCESSING SYSTEMS, AND OPERATING METHODS THEREOF
Publication/Patent Number: US2021037204A1 Publication Date: 2021-02-04 Application Number: 16/811,497 Filing Date: 2020-03-06 Inventor: Moon, Kyounghwan   Assignee: Samsung Electronics Co.,. Ltd.   IPC: H04N5/3745 Abstract: An image sensor includes a pixel array including a plurality of pixels arranged in a matrix, the plurality of pixels configured to generate separate, respective pixel signals, a row driver configured to selectively read pixel signals generated by pixels of a plurality of rows of the pixel array, a binning circuitry configured to selectively sum or pass through the read pixel signals to generate binned pixel signals, a column array including a plurality of analog-to-digital converters (ADCs) configured to perform an analog-to-digital conversion on the binned pixel signals, and a mode selecting circuitry configured to control the row driver and the binning circuitry to change an operation mode of the image sensor based on a mode signal received at the image sensor to change an operation mode of the image sensor.
Total 500 pages