Country
Full text data for US and EP
Status
Type
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC
No.
Publication Number
Title
Publication/Patent Number Publication/Patent Number
Publication date Publication date
Application number Application number
Filing date Filing date
Inventor Inventor
Assignee Assignee
IPC IPC
1
US9287400B2
Publication/Patent Number: US9287400B2
Publication date: 2016-03-15
Application number: 20/121,358
Filing date: 2012-08-16
Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in ...more ...less
2
US2013271187A1
Publication/Patent Number: US2013271187A1
Publication date: 2013-10-17
Application number: 13/976,128
Filing date: 2012-01-12
Abstract: Providing a driver for semiconductor switch element capable of securing a sufficient drive power and reliably turning off the semiconductor switch element. The driver includes a converter section 2 which includes a switching element Q1 and which is configured to output a desired DC voltage by switching the switching element Q1, a control section 1 configured to control the switching operation of the switching element Q1, capacitors C1A, C1B charged by the output of the converter section 2, turn-on circuits 31A, 31B configured to supply gates of a bidirectional switch element 4 using electric charges stored in the capacitors C1A, C1B with drive powers to turn-on the bidirectional switch element 4, and turn-off circuits 32A, 32B configured to discharge the capacitors C1A, C1B to turn-off the bidirectional switch element 4 in response to the halt of the switching operation of the switching element Q1 by the control section 1. Providing a driver for semiconductor switch element capable of securing a sufficient drive power and reliably turning off the semiconductor switch element. The driver includes a converter section 2 which includes a switching element Q1 and which is configured to output a desired ...more ...less
3
WO2013031777A1
Publication/Patent Number: WO2013031777A1
Publication date: 2013-03-07
Application number: 2012071718
Filing date: 2012-08-28
Abstract: The purpose of the present invention is to provide an ion source from which highly pure polyvalent ions can be taken out. This ion source (10) comprises: a target (12) that
4
US2012018613A1
Publication/Patent Number: US2012018613A1
Publication date: 2012-01-26
Application number: 13/263,459
Filing date: 2010-04-06
Abstract: A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a surface of the buffer layer 16; and a porous alumina layer 20 provided on a surface of the aluminum layer 18a. The porous alumina layer 20 has a plurality of recessed portions 22 whose two-dimensional size viewed in a direction normal to the surface is not less than 10 nm and less than 500 nm. The mold of the present invention has excellent adhesion between the aluminum layer and the base. A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a ...more ...less
5
US8087104B2
Publication/Patent Number: US8087104B2
Publication date: 2012-01-03
Application number: 12/380,542
Filing date: 2009-03-02
Inventor: Reynolds, James W.  
Abstract: A manual toilet seat lifter apparatus is provided for lifting and lowering a toilet seat and includes strap hinge members connected to the toilet seat. A hinge pin is received in the strap hinge members. A riser rod is connected to the hinge pin. A handle is connected to a top end of the riser rod, and a counterweight is connected to a bottom end of the riser rod. Preferably, a horizontal transition portion is connected between the hinge pin and the riser rod. Preferably, a horizontal extension portion is connected to the riser rod at a location on the riser rod which is opposite to the horizontal transition portion. With a second embodiment of the invention, which is a combined toilet seat lifter and toilet seat cover lifter apparatus, toilet seat cover lifting means are provided for lifting and lowering a toilet seat cover. A manual toilet seat lifter apparatus is provided for lifting and lowering a toilet seat and includes strap hinge members connected to the toilet seat. A hinge pin is received in the strap hinge members. A riser rod is connected to the hinge pin. A handle is connected to a top ...more ...less
6
US2012309157A1
Publication/Patent Number: US2012309157A1
Publication date: 2012-12-06
Application number: 13/587,361
Filing date: 2012-08-16
Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable. An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in ...more ...less
7
WO2012096321A1
Publication/Patent Number: WO2012096321A1
Publication date: 2012-07-19
Application number: 2012050414
Filing date: 2012-01-12
Abstract: Provided is an apparatus for driving a semiconductor switch element
8
WO2012080807A1
Publication/Patent Number: WO2012080807A1
Publication date: 2012-06-21
Application number: 2011003004
Filing date: 2011-12-13
Abstract: Provided is an electronic relay load control device equipped with a switching unit that is connected to a power source and a load in series and utilizes a switching element having a transistor structure
9
WO2012073820A1
Publication/Patent Number: WO2012073820A1
Publication date: 2012-06-07
Application number: 2011077182
Filing date: 2011-11-25
Abstract: An electrode structure (100) according to the present invention is provided with: an aluminum electrode (10) which makes contact with the surface of an aluminum substrate; a fixing member (20) for fixing the aluminum electrode (10) to the surface of the aluminum substrate; an elastic member (30) which is positioned between the fixing member (20) and the aluminum substrate; a lead wire (40) which is electrically connected to the aluminum electrode (10) according to at least a certain condition; and a cover (50) which is hermetically sealed in a state where the lead wire (40) has passed through an opening (50a). An electrode structure (100) according to the present invention is provided with: an aluminum electrode (10) which makes contact with the surface of an aluminum substrate; a fixing member (20) for fixing the aluminum electrode (10) to the surface of the aluminum substrate; an ...more ...less
10
WO2012029570A1
Publication/Patent Number: WO2012029570A1
Publication date: 2012-03-08
Application number: 2011068839
Filing date: 2011-08-22
Abstract: The method for forming an anodized layer comprises: a step for preparing an aluminum film or an aluminum substrate disposed on top of a supporting body; and a step for forming a porous alumina layer (10c) with fine recessed sections (10p)
11
WO2012124498A1
Publication/Patent Number: WO2012124498A1
Publication date: 2012-09-20
Application number: 2012055248
Filing date: 2012-03-01
Abstract: The present invention provides a die
12
US2011100696A1
Publication/Patent Number: US2011100696A1
Publication date: 2011-05-05
Application number: 12/915,852
Filing date: 2010-10-29
Abstract: A semiconductor device is of a PoP structure such that first electrode portions provided on a first device mounting board constituting a first semiconductor module and second electrode portions provided in a second semiconductor module are joined together by solder balls. A first insulating layer having an opening is provided on one main surface of an insulating resin layer which is a substrate, and an electrode portion, whose top portion protrudes above the top surface of the first insulating layer, is formed in the opening. A second insulating layer is provided on top of the first insulating layer in the periphery of the top portion of the first electrode portion; the second insulting layer is located slightly apart from the top portion of the first electrode portion. The first electrode portion is shaped such that the top portion is formed by a curved surface or formed by a curved surface and a plane surface smoothly connected to the curved surface. A semiconductor device is of a PoP structure such that first electrode portions provided on a first device mounting board constituting a first semiconductor module and second electrode portions provided in a second semiconductor module are joined together by solder balls. A ...more ...less
13
WO2011105206A1
Publication/Patent Number: WO2011105206A1
Publication date: 2011-09-01
Application number: 2011052599
Filing date: 2011-02-08
Abstract: Provided is a method for easily producing a seamless rolled die having a porous alumina layer on the surface. The method of producing the die is a method for producing a die (100) having a porous alumina layer on the surface
14
WO2011111697A1
Publication/Patent Number: WO2011111697A1
Publication date: 2011-09-15
Application number: 2011055364
Filing date: 2011-03-08
Abstract: Disclosed is a method for forming an anodized layer that includes a step (a) for preparing an aluminum film (16) formed on a first main surface of a base (12) and a step (b) for forming a porous alumina layer (18) having a plurality of micro concavities (18pa
15
WO2011135976A1
Publication/Patent Number: WO2011135976A1
Publication date: 2011-11-03
Application number: 2011058392
Filing date: 2011-04-01
Abstract: Disclosed is a process for producing a mold
16
WO2011125486A1
Publication/Patent Number: WO2011125486A1
Publication date: 2011-10-13
Application number: 2011056832
Filing date: 2011-03-22
Abstract: Provided is a process for producing a die having a porous alumina layer on the surface thereof
17
WO2011052746A1
Publication/Patent Number: WO2011052746A1
Publication date: 2011-05-05
Application number: 2010069353
Filing date: 2010-10-29
Abstract: Disclosed is an element mounting substrate (110) which is provided with: a base material (10); an insulating layer (30)
18
US2010292525A1
Publication/Patent Number: US2010292525A1
Publication date: 2010-11-18
Application number: 12/662,938
Filing date: 2010-05-12
Abstract: An aspect of the present invention is a method of processing a waste material that contains mercury or a mercury compound, and chlorine or a mercury chloride, the method including a step of adding a chlorine scavenger to the waste material, and stowing the waste material in a treatment vessel; and a step of subjecting the waste material to a blasting treatment by fitting an explosive to the treatment vessel and detonating the explosive inside a pressure-proof container. An aspect of the present invention is a method of processing a waste material that contains mercury or a mercury compound, and chlorine or a mercury chloride, the method including a step of adding a chlorine scavenger to the waste material, and stowing the waste material in a ...more ...less
19
WO2010116728A1
Publication/Patent Number: WO2010116728A1
Publication date: 2010-10-14
Application number: 2010002518
Filing date: 2010-04-06
Abstract: A die comprising: a base material (12) consisting of glass or plastic; an inorganic base layer (14) formed on the surface of the base material (12); a buffer layer (16)formed on the inorganic base later (14) and containing aluminum; an aluminum layer (18a) formed on the surface of the buffer layer (16); and a porous alumina layer (20) formed on the surface of the aluminum layer (18a). The porous alumina layer (20) comprises recesses (22) each having a two-dimensional size not smaller than 10 nm but not greater than 500 nm when viewed in the direction normal to the surface. The die has excellent adhesion properties between the aluminum layer and the base material. A die comprising: a base material (12) consisting of glass or plastic; an inorganic base layer (14) formed on the surface of the base material (12); a buffer layer (16)formed on the inorganic base later (14) and containing aluminum; an aluminum layer (18a) formed on the surface ...more ...less
20
WO2010125795A1
Publication/Patent Number: WO2010125795A1
Publication date: 2010-11-04
Application number: 2010002989
Filing date: 2010-04-26
Abstract: Provided is a mold (100) that has: a flexible high-molecular film (12); a hardening resin layer (14) formed on the surface of the high-molecular film (12); and a porous alumina layer (20) formed on top of the hardening resin layer (14). The surface of the porous alumina layer has an inverted moss-eye structure that has a plurality of concavities having two-dimensional sizes Provided is a mold (100) that has: a flexible high-molecular film (12); a hardening resin layer (14) formed on the surface of the high-molecular film (12); and a porous alumina layer (20) formed on top of the hardening resin layer (14). The surface of the porous alumina layer ...more ...less