Country
Full text data for US and EP
Status
Type
Filing Date
Publication Date
Inventor
Assignee
Click to expand
IPC
No.
Publication Number
Title
Publication/Patent Number Publication/Patent Number
Publication date Publication date
Application number Application number
Filing date Filing date
Inventor Inventor
Assignee Assignee
IPC IPC
2
US20140250714A1
Publication/Patent Number: US20140250714A1
Publication date: 2014-09-11
Application number: 14/283,874
Filing date: 2014-05-21
Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor ...more ...less
3
US20130206600A1
Publication/Patent Number: US20130206600A1
Publication date: 2013-08-15
Application number: 13/877,182
Filing date: 2011-10-06
Inventor: Hayashi, Hidekazu  
Abstract: A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), separating the porous alumina layer from the multilayer structure. According to an embodiment of the present invention, a self-supporting anodized film which includes a porous alumina layer can be manufactured more conveniently as compared with the conventional methods. A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer ...more ...less
4
US20130122706A1
Publication/Patent Number: US20130122706A1
Publication date: 2013-05-16
Application number: 13/428,681
Filing date: 2012-03-23
Abstract: According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the support substrate is subjected to water-repellent treatment to thereby form a water-repellent area on the part of the circumferential part in such a manner that the water-repellent area and an end face of the adhesive are in contact with each other. The semiconductor substrate is removed from a rear surface side by wet etching. According to one embodiment, a method of manufacturing of a semiconductor device is provided. In the method, a front surface of a semiconductor substrate and a front surface of a support substrate are bonded to each other by an adhesive. A part of a circumferential part of the ...more ...less
5
US20130055584A1
Publication/Patent Number: US20130055584A1
Publication date: 2013-03-07
Application number: 13/600,860
Filing date: 2012-08-31
Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber. According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the ...more ...less
6
US20130061492A1
Publication/Patent Number: US20130061492A1
Publication date: 2013-03-14
Application number: 13/423,374
Filing date: 2012-03-19
Abstract: According to one embodiment, a supercritical drying apparatus comprises a chamber being hermetically sealable and configured to store a semiconductor substrate, a heater configured to heat an inner side of the chamber, a supply unit configured to supply carbon dioxide to the chamber, a discharge unit configured to discharge carbon dioxide from the chamber, and a rotation unit configured to rotate the chamber by an angle equal to or greater than 90 degrees and equal to or smaller than 180 degrees with respect to the horizontal direction. According to one embodiment, a supercritical drying apparatus comprises a chamber being hermetically sealable and configured to store a semiconductor substrate, a heater configured to heat an inner side of the chamber, a supply unit configured to supply carbon dioxide to the ...more ...less
7
WO2013008643A1
Publication/Patent Number: WO2013008643A1
Publication date: 2013-01-17
Application number: 2012066636
Filing date: 2012-06-29
Abstract: The present invention provides a shape-testing method capable of performing high-precision non-destructive testing of a test object having an irregular profile
8
US20130029197A1
Publication/Patent Number: US20130029197A1
Publication date: 2013-01-31
Application number: 13/632,658
Filing date: 2012-10-01
Abstract: One aspect according to the present invention includes a battery pack and a shock absorbing device interposed between a battery cell holder and a case body and capable of keeping the battery cell holder and the battery cells not to directly contact with an inner surface of the case body. One aspect according to the present invention includes a battery pack and a shock absorbing device interposed between a battery cell holder and a case body and capable of keeping the battery cell holder and the battery cells not to directly contact with an inner surface of the ...more ...less
9
WO2013031379A1
Publication/Patent Number: WO2013031379A1
Publication date: 2013-03-07
Application number: 2012066979
Filing date: 2012-07-03
Abstract: [Problem] The present invention relates to an air conditioning apparatus for a vehicle which may improve ride comfort of a passenger when sunlight is strong. [Solution] The present invention comprises a ventilator (32) which generates ventilation air; a heat exchanger for heating (36) which heats the ventilation air by performing heat exchange between the ventilation air and a heating medium; a control unit (50) which determines a rate of operation of the ventilator (32); and outlet mode switching members (39d [Problem] The present invention relates to an air conditioning apparatus for a vehicle which may improve ride comfort of a passenger when sunlight is strong. [Solution] The present invention comprises a ventilator (32) which generates ventilation air; a heat exchanger for ...more ...less
10
US20130019905A1
Publication/Patent Number: US20130019905A1
Publication date: 2013-01-24
Application number: 13/420,870
Filing date: 2012-03-15
Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor ...more ...less
11
US8087104B2
Publication/Patent Number: US8087104B2
Publication date: 2012-01-03
Application number: 12/380,542
Filing date: 2009-03-02
Inventor: Reynolds, James W.  
Abstract: A manual toilet seat lifter apparatus is provided for lifting and lowering a toilet seat and includes strap hinge members connected to the toilet seat. A hinge pin is received in the strap hinge members. A riser rod is connected to the hinge pin. A handle is connected to a top end of the riser rod, and a counterweight is connected to a bottom end of the riser rod. Preferably, a horizontal transition portion is connected between the hinge pin and the riser rod. Preferably, a horizontal extension portion is connected to the riser rod at a location on the riser rod which is opposite to the horizontal transition portion. With a second embodiment of the invention, which is a combined toilet seat lifter and toilet seat cover lifter apparatus, toilet seat cover lifting means are provided for lifting and lowering a toilet seat cover. A manual toilet seat lifter apparatus is provided for lifting and lowering a toilet seat and includes strap hinge members connected to the toilet seat. A hinge pin is received in the strap hinge members. A riser rod is connected to the hinge pin. A handle is connected to a top ...more ...less
12
US20120018613A1
Publication/Patent Number: US20120018613A1
Publication date: 2012-01-26
Application number: 13/263,459
Filing date: 2010-04-06
Abstract: A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a surface of the buffer layer 16; and a porous alumina layer 20 provided on a surface of the aluminum layer 18a. The porous alumina layer 20 has a plurality of recessed portions 22 whose two-dimensional size viewed in a direction normal to the surface is not less than 10 nm and less than 500 nm. The mold of the present invention has excellent adhesion between the aluminum layer and the base. A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a ...more ...less
13
US20120240426A1
Publication/Patent Number: US20120240426A1
Publication date: 2012-09-27
Application number: 13/231,956
Filing date: 2011-09-13
Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol. According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide ...more ...less
14
US20120118332A1
Publication/Patent Number: US20120118332A1
Publication date: 2012-05-17
Application number: 13/052,232
Filing date: 2011-03-21
Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried. In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a ...more ...less
15
US8194886B2
Publication/Patent Number: US8194886B2
Publication date: 2012-06-05
Application number: 11/539,210
Filing date: 2006-10-06
Abstract: An audio crossover system and method is disclosed. An audio system includes two driver circuits, one for each of two audio frequency ranges, e.g., high and low frequency ranges. The driver circuits are designed to provide a combined frequency response curve that has a pronounced midrange attenuation dip, in contrast to prior art designs that attempt to provide a flat response over all frequency ranges. An audio crossover system and method is disclosed. An audio system includes two driver circuits, one for each of two audio frequency ranges, e.g., high and low frequency ranges. The driver circuits are designed to provide a combined frequency response curve that has a pronounced ...more ...less
16
US20120186097A1
Publication/Patent Number: US20120186097A1
Publication date: 2012-07-26
Application number: 13/160,350
Filing date: 2011-06-14
Abstract: Certain embodiments provide a supercritical drying device, comprising a sealable first vessel; a fluorine adsorbent provided inside the first vessel; a second vessel being provided inside the first vessel and housing a semiconductor substrate; a heater heating the inside of the first vessel; a pipe connected to the first vessel; and a valve provided on the pipe. Free fluorine generated by heating a fluorine containing solvent is adsorbed to the fluorine adsorbent. Certain embodiments provide a supercritical drying device, comprising a sealable first vessel; a fluorine adsorbent provided inside the first vessel; a second vessel being provided inside the first vessel and housing a semiconductor substrate; a heater heating the inside of the ...more ...less
17
US20120048304A1
Publication/Patent Number: US20120048304A1
Publication date: 2012-03-01
Application number: 13/029,776
Filing date: 2011-02-17
Abstract: According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide. According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; ...more ...less
18
WO2012073820A1
Publication/Patent Number: WO2012073820A1
Publication date: 2012-06-07
Application number: 2011077182
Filing date: 2011-11-25
Abstract: An electrode structure (100) according to the present invention is provided with: an aluminum electrode (10) which makes contact with the surface of an aluminum substrate; a fixing member (20) for fixing the aluminum electrode (10) to the surface of the aluminum substrate; an elastic member (30) which is positioned between the fixing member (20) and the aluminum substrate; a lead wire (40) which is electrically connected to the aluminum electrode (10) according to at least a certain condition; and a cover (50) which is hermetically sealed in a state where the lead wire (40) has passed through an opening (50a). An electrode structure (100) according to the present invention is provided with: an aluminum electrode (10) which makes contact with the surface of an aluminum substrate; a fixing member (20) for fixing the aluminum electrode (10) to the surface of the aluminum substrate; an ...more ...less
19
WO2012046808A1
Publication/Patent Number: WO2012046808A1
Publication date: 2012-04-12
Application number: 2011073109
Filing date: 2011-10-06
Inventor: Hayashi, Hidekazu  
Abstract: The method for producing an anodized film of the present invention includes a step (a) a for preparing a laminated structure (10) that comprises a substrate (12)
20
WO2012060178A1
Publication/Patent Number: WO2012060178A1
Publication date: 2012-05-10
Application number: 2011073073
Filing date: 2011-10-06
Abstract: In the present invention