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1
US10176913B2
Publication/Patent Number: US10176913B2
Publication date: 2019-01-08
Application number: 15/071,034
Filing date: 2016-03-15
Abstract: An output driving circuit outputs an output current to a solenoid incorporated in a vehicle through an output terminal. A detection resistor connected between the output terminal and the output driving circuit. An amplification unit configured to output an analog detection signal generated by amplifying a voltage between both ends of the detection resistor. A current generation circuit configured to output a reference current. A reference resistor connected between the current generation circuit and a ground and configured to output a reference voltage according to the reference current. An A/D converter configured to convert the analog detection signal into a digital detection signal using the reference voltage as a reference. A control circuit configured to control the output current output from the output driving circuit according to the digital detection signal. An output driving circuit outputs an output current to a solenoid incorporated in a vehicle through an output terminal. A detection resistor connected between the output terminal and the output driving circuit. An amplification unit configured to output an analog detection ...more ...less
2
US10191829B2
Publication/Patent Number: US10191829B2
Publication date: 2019-01-29
Application number: 14/803,047
Filing date: 2015-07-18
Inventor: Ito, Hirohiko  
Abstract: According to one embodiment, a semiconductor device includes a memory-transfer control unit that controls data transfer between a memory and a sound unit. A plurality of sound data transfer routes are configured by one memory-transfer control unit and one sound unit. The semiconductor device outputs reproduction sound data via at least one sound data transfer route and acquires at least two pieces of recording sound data on account of one piece of reproduction sound data via at least two sound data transfer routes. According to one embodiment, a semiconductor device includes a memory-transfer control unit that controls data transfer between a memory and a sound unit. A plurality of sound data transfer routes are configured by one memory-transfer control unit and one sound unit. The ...more ...less
3
US10288493B2
Publication/Patent Number: US10288493B2
Publication date: 2019-05-14
Application number: 15/198,663
Filing date: 2016-06-30
Abstract: In order to provide a semiconductor integrated circuit capable of predicting its own lifetime (wear out failure) due to the aged deterioration and notifying a warning, it includes a processor, a temperature sensor, a non-volatile memory, and a comparator formed on the same semiconductor substrate. The comparator compares a temperature measured by the temperature sensor with a predetermined temperature threshold, and the non-volatile memory accumulatively holds the information (cumulative time) about a period having the temperature exceeding the temperature threshold. The semiconductor integrated circuit notifies the outward of a warning when the cumulative time having the temperature exceeding the temperature threshold exceeds a predetermined high temperature time threshold. In order to provide a semiconductor integrated circuit capable of predicting its own lifetime (wear out failure) due to the aged deterioration and notifying a warning, it includes a processor, a temperature sensor, a non-volatile memory, and a comparator formed on the same ...more ...less
4
US10310007B2
Publication/Patent Number: US10310007B2
Publication date: 2019-06-04
Application number: 14/973,561
Filing date: 2015-12-17
Abstract: An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor circuit (11); a voltage generator (12) that selects one of at least two types of voltages and applies a power supply voltage, the at least two types of voltages including a normal voltage at which the semiconductor circuit (11) normally operates and a low voltage which is lower than the normal voltage; and a clock generator (13) that supplies the semiconductor circuit (11) with a clock signal having a constant frequency regardless of the power supply voltage. An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor ...more ...less
5
US10205237B2
Publication/Patent Number: US10205237B2
Publication date: 2019-02-12
Application number: 15/324,650
Filing date: 2014-07-30
Abstract: A loop antenna 1 includes: a first electrode terminal 2c; a second electrode terminal 2d arranged to make a pair with the first electrode terminal 2c; and a loop-shaped member 2 which has one end connected to the first electrode terminal 2c and the other end connected to the second electrode terminal 2d, is wound a plurality of times, and is made of a conductive material. The first electrode terminal 2c and the second electrode terminal 2d are arranged so as to make a pair with respect to a center line 3 of the loop-shaped member 2. Further, the loop-shaped member 2 includes a first loop-shaped member 2a, a second loop-shaped member 2b, and an intersection part 2e. The intersection part 2e is arranged on the center line 3 in a plan view, and the loop-shaped member 2 is continuously connected and formed to be symmetrical with respect to the center line 3. A loop antenna 1 includes: a first electrode terminal 2c; a second electrode terminal 2d arranged to make a pair with the first electrode terminal 2c; and a loop-shaped member 2 which has one end connected to the first electrode terminal 2c and the other end connected to the ...more ...less
6
US10241154B2
Publication/Patent Number: US10241154B2
Publication date: 2019-03-26
Application number: 15/264,703
Filing date: 2016-09-14
Inventor: Kiuchi, Hideki  
Abstract: A voltage monitoring module includes a first terminal configured to be coupled to a high-potential-side terminal of a first battery cell, and a second terminal configured to be coupled to a low-potential-side of the first battery cell.
7
US10355161B2
Publication/Patent Number: US10355161B2
Publication date: 2019-07-16
Application number: 15/703,525
Filing date: 2017-09-13
Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress. To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed ...more ...less
8
US10347567B2
Publication/Patent Number: US10347567B2
Publication date: 2019-07-09
Application number: 16/020,353
Filing date: 2018-06-27
Abstract: In a resin sealing type semiconductor device, a semiconductor chip CP2 is mounted over a die pad DP having conductivity via a bonding member BD2 having insulation property, and a semiconductor chip CP1 is mounted over the die pad DP via a bonding member BD1 having conductivity. A first length of a portion, in a first side formed by an intersection of a first side surface and a second side surface of the semiconductor chip CP2, covered with the bonding member BD2 is larger than a second length of a portion, in a second side formed by an intersection of a third side surface and a fourth side surface of the semiconductor chip CP1, covered with the bonding member BD1. In a resin sealing type semiconductor device, a semiconductor chip CP2 is mounted over a die pad DP having conductivity via a bonding member BD2 having insulation property, and a semiconductor chip CP1 is mounted over the die pad DP via a bonding member BD1 having conductivity ...more ...less
9
US10353451B2
Publication/Patent Number: US10353451B2
Publication date: 2019-07-16
Application number: 15/234,939
Filing date: 2016-08-11
Abstract: In a system using a device not adapted to a single wire bus, a semiconductor device includes an external terminal to be coupled to a power source terminal of an external device, a port that supplies a power source voltage for the external device to the external terminal, a power manager that controls an output of the port, and a CPU that controls an operation of the power manager. In a system using a device not adapted to a single wire bus, a semiconductor device includes an external terminal to be coupled to a power source terminal of an external device, a port that supplies a power source voltage for the external device to the external terminal, a power ...more ...less
10
US10210838B2
Publication/Patent Number: US10210838B2
Publication date: 2019-02-19
Application number: 15/644,113
Filing date: 2017-07-07
Inventor: Tsuchi, Hiroshi  
Abstract: A level shift circuit includes first and second NMOS transistors that are coupled between a first supply terminal, and first and second output nodes, respectively, and have respective control terminals receivin