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1
WO2012060024A1
Publication/Patent Number: WO2012060024A1
Publication date: 2012-05-10
Application number: 2011002216
Filing date: 2011-04-14
Abstract: When exposure is performed using a photomask having at least a light-transmitting part that transmits exposure light
2
WO2011101926A1
Publication/Patent Number: WO2011101926A1
Publication date: 2011-08-25
Application number: 2010004823
Filing date: 2010-07-29
Abstract: A manufacturing method for semiconductor devices includes a step (a) in which a film to be processed is formed on a substrate
3
WO2011004527A1
Publication/Patent Number: WO2011004527A1
Publication date: 2011-01-13
Application number: 2010002830
Filing date: 2010-04-20
Abstract: A resist film (102) is formed from a chemically amplified resist material onto a substrate (101). The resist film (102) is irradiated with an exposure light comprising extreme ultraviolet light in a selective manner to achieve pattern exposure. The resist film (102) that has been subjected to pattern exposure is heated A resist film (102) is formed from a chemically amplified resist material onto a substrate (101). The resist film (102) is irradiated with an exposure light comprising extreme ultraviolet light in a selective manner to achieve pattern exposure. The resist film (102) that has ...more ...less
4
WO2011004528A1
Publication/Patent Number: WO2011004528A1
Publication date: 2011-01-13
Application number: 2010002831
Filing date: 2010-04-20
Abstract: A resist film (102) having a film thickness of 50 nm or less is formed from a positive-type chemically amplified resist material onto a substrate (101). Subsequently
5
WO2010070785A1
Publication/Patent Number: WO2010070785A1
Publication date: 2010-06-24
Application number: 2009004214
Filing date: 2009-08-28
Abstract: Disclosed are a resist material and a method for pattern formation using the resist material. A resist film (102) is formed on a substrate (101) using a resist material. The resist material contains a cyclic oligomer which does not contain an acid labile group
6
US20100233482A1
Publication/Patent Number: US20100233482A1
Publication date: 2010-09-16
Application number: 12/789,902
Filing date: 2010-05-28
Abstract: Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms. Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof ...more ...less
7
WO2010001525A1
Publication/Patent Number: WO2010001525A1
Publication date: 2010-01-07
Application number: 2009002341
Filing date: 2009-05-27
Abstract: A first resist film (102) is formed on a substrate (101)
8
WO2010038340A1
Publication/Patent Number: WO2010038340A1
Publication date: 2010-04-08
Application number: 2009003259
Filing date: 2009-07-10
Abstract: First
9
WO2010116577A1
Publication/Patent Number: WO2010116577A1
Publication date: 2010-10-14
Application number: 2010000191
Filing date: 2010-01-15
Abstract: On a substrate (101)
10
WO2010055601A1
Publication/Patent Number: WO2010055601A1
Publication date: 2010-05-20
Application number: 2009004217
Filing date: 2009-08-28
Abstract: A block copolymer film (102) is formed on a substrate (101).  The block copolymer film (102) is annealed under an inert gas atmosphere such as a neon atmosphere.  Thus
11
WO2010113370A1
Publication/Patent Number: WO2010113370A1
Publication date: 2010-10-07
Application number: 2010000189
Filing date: 2010-01-15
Abstract: First of all
12
WO2010097856A1
Publication/Patent Number: WO2010097856A1
Publication date: 2010-09-02
Application number: 2009005348
Filing date: 2009-10-14
Abstract: A positive resist film (102) containing a photo acid generating agent is formed on a substrate (101).  Then
13
WO2010150428A1
Publication/Patent Number: WO2010150428A1
Publication date: 2010-12-29
Application number: 2010000190
Filing date: 2010-01-15
Abstract: A resist film (102) is formed
14
US20100283133A1
Publication/Patent Number: US20100283133A1
Publication date: 2010-11-11
Application number: 12/842,400
Filing date: 2010-07-23
Abstract: In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition. In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each ...more ...less
15
WO2010047018A1
Publication/Patent Number: WO2010047018A1
Publication date: 2010-04-29
Application number: 2009003267
Filing date: 2009-07-13
Abstract: A resist film (102) composed of a resist material
16
WO2010097857A1
Publication/Patent Number: WO2010097857A1
Publication date: 2010-09-02
Application number: 2009005351
Filing date: 2009-10-14
Abstract: A resist film (102) is formed on a substrate (101)
17
US20090104560A1
Publication/Patent Number: US20090104560A1
Publication date: 2009-04-23
Application number: 12/202,615
Filing date: 2008-09-02
Abstract: In exposing a resist film to light with a liquid provided on a positive chemically amplified resist film, a barrier film material for a barrier film formed between the resist film and the liquid includes a compound having an acid leaving group and a thermal acid generator.
18
US20090092930A1
Publication/Patent Number: US20090092930A1
Publication date: 2009-04-09
Application number: 12/212,291
Filing date: 2008-09-17
Abstract: After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma. After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film ...more ...less
19
US20090075182A1
Publication/Patent Number: US20090075182A1
Publication date: 2009-03-19
Application number: 12/204,252
Filing date: 2008-09-04
Abstract: A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a ...more ...less
20
US20090011065A1
Publication/Patent Number: US20090011065A1
Publication date: 2009-01-08
Application number: 11/659,109
Filing date: 2006-05-23
Abstract: A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.