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1
EP2573708B8
Publication/Patent Number: EP2573708B8
Publication date: 2019-03-20
Application number: 12181018.8
Filing date: 2012-08-20
Abstract: Disclosed are a method and a system for detecting a vehicle position by employing a polarization image. The method comprises a step of capturing a polarization image by using a polarization camera; a step of acquiring two road shoulders in the polarization image based on a difference between a road surface and each of the two road shoulders in the polarization image, and determining a part between the two road shoulders as the road surface; a step of detecting at least one vehicle bottom from the road surface based on a significant pixel value difference between each wheel and the road surface in the polarization image; and a step of generating a vehicle position from the vehicle bottom based on a pixel value difference between a vehicle outline corresponding to the vehicle bottom and background in the polarization image. Disclosed are a method and a system for detecting a vehicle position by employing a polarization image. The method comprises a step of capturing a polarization image by using a polarization camera; a step of acquiring two road shoulders in the polarization image based on a ...more ...less
2
US10428085B2
Publication/Patent Number: US10428085B2
Publication date: 2019-10-01
Application number: 16/116,944
Filing date: 2018-08-30
Abstract: An asymmetric benzotrichalcogenophene compound and a polymer are provided. The asymmetric benzotrichalcogenophene compound is a heterocyclic compound having furan, thiophene, selenophene and/or tellurophene subunits. The polymer has an asymmetric benzotrichalcogenophene subunit and can be formed by polymerizing the asymmetric benzotrichalcogenophene compound and an electron-accepting compound. The polymer may be used as a semiconductor active layer material in an organic field effect transistor or a heterogeneous interface material of an organic solar cell. An asymmetric benzotrichalcogenophene compound and a polymer are provided. The asymmetric benzotrichalcogenophene compound is a heterocyclic compound having furan, thiophene, selenophene and/or tellurophene subunits. The polymer has an asymmetric benzotrichalcogenophene subunit ...more ...less
3
US2019242748A1
Publication/Patent Number: US2019242748A1
Publication date: 2019-08-08
Application number: 15/960,828
Filing date: 2018-04-24
Abstract: Disclosed is a resonant wavelength measurement apparatus, including a light source and a measurement unit. The measurement unit has a guided-mode resonance filter and a photosensitive element. The guided-mode resonance filter has a plurality of resonant areas, and each resonant area has a different filtering characteristic, to receive first light in the light source transmitted by a sensor or receive second light in the light source reflected by the sensor. The first light has a first corresponding pixel on the photosensitive element, the second light has a second corresponding pixel on the photosensitive element, and the first corresponding pixel and the second corresponding pixel correspond to a same resonant wavelength. Disclosed is a resonant wavelength measurement apparatus, including a light source and a measurement unit. The measurement unit has a guided-mode resonance filter and a photosensitive element. The guided-mode resonance filter has a plurality of resonant areas, and each resonant ...more ...less
4
US2019027558A1
Publication/Patent Number: US2019027558A1
Publication date: 2019-01-24
Application number: 16/142,869
Filing date: 2018-09-26
Abstract: A method includes forming isolation regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a hard mask strip over the isolation regions and a semiconductor strip, wherein the semiconductor strip is between two neighboring ones of the isolation regions. A dummy gate strip is formed over the hard mask strip, wherein a lengthwise direction of the dummy gate strip is perpendicular to a lengthwise direction of the semiconductor strip, and wherein a portion of the dummy gate strip is aligned to a portion of the semiconductor strip. The method further includes removing the dummy gate strip, removing the hard mask strip, and recessing first portions of the isolation regions that are overlapped by the removed hard mask strip. A portion of the semiconductor strip between and contacting the removed first portions of the isolation regions forms a semiconductor fin. A method includes forming isolation regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a hard mask strip over the isolation regions and a semiconductor strip, wherein the semiconductor strip is between two neighboring ...more ...less
5
US2019204581A1
Publication/Patent Number: US2019204581A1
Publication date: 2019-07-04
Application number: 16/118,908
Filing date: 2018-08-31
Abstract: The present disclosure provides a pixel structure, a method of driving a pixel structure, an array substrate, and a display device. The pixel structure includes a fixed substrate, an electrically conductive layer at a side of the fixed substrate, a movable shield at another side of the fixed substrate, and an electrically conductive film. The fixed substrate includes a transparent substrate and a dielectric layer. The electrically conductive layer and the dielectric layer are configured to form one or more interference air gaps according to a pixel voltage applied between the electrically conductive layer and the electrically conductive film. The movable shield is configured to change an amount of incident light irradiating the electrically conductive layer. The present disclosure provides a pixel structure, a method of driving a pixel structure, an array substrate, and a display device. The pixel structure includes a fixed substrate, an electrically conductive layer at a side of the fixed substrate, a movable shield at another side ...more ...less
6
US10384434B2
Publication/Patent Number: US10384434B2
Publication date: 2019-08-20
Application number: 15/956,770
Filing date: 2018-04-19
Abstract: A separating device includes a separating unit and a crack front line adjusting unit. The separating unit is adapted to separate the flexible film and the substrate. During the process of separating the flexible film from the substrate, a crack front line is formed between a portion of the flexible film not separated from the substrate and a portion of the flexible film separated from the substrate. The crack front line adjusting unit is adapted to sense a relative displacement state of the flexible film and the substrate for determining a distribution of the crack front line, and is adapted to apply a down pressing force to the flexible film or the substrate and increase or decrease the down pressing force according to the relative displacement state, so as to adjust the distribution of the crack front line. A separating device includes a separating unit and a crack front line adjusting unit. The separating unit is adapted to separate the flexible film and the substrate. During the process of separating the flexible film from the substrate, a crack front line is formed between a ...more ...less
7
US10173407B2
Publication/Patent Number: US10173407B2
Publication date: 2019-01-08
Application number: 15/135,403
Filing date: 2016-04-21
Abstract: A device is for removing a first substrate from a second substrate or adhering the first substrate to the second substrate. The device includes a carrier, a flexible member and a supporting member. The carrier is for fixing the first substrate. The flexible member is for fixing the second substrate. The supporting member is connected to the carrier and the flexible member. The carrier and the flexible member are spaced a distance from each other. The carrier, the flexible member and the supporting member together define a first variable pressure chamber. The first variable pressure chamber has a first air hole. A device is for removing a first substrate from a second substrate or adhering the first substrate to the second substrate. The device includes a carrier, a flexible member and a supporting member. The carrier is for fixing the first substrate. The flexible member is for fixing ...more ...less
8
US2019061332A1
Publication/Patent Number: US2019061332A1
Publication date: 2019-02-28
Application number: 15/956,770
Filing date: 2018-04-19
Abstract: A separating device includes a separating unit and a crack front line adjusting unit. The separating unit is adapted to separate the flexible film and the substrate. During the process of separating the flexible film from the substrate, a crack front line is formed between a portion of the flexible film not separated from the substrate and a portion of the flexible film separated from the substrate. The crack front line adjusting unit is adapted to sense a relative displacement state of the flexible film and the substrate for determining a distribution of the crack front line, and is adapted to apply a down pressing force to the flexible film or the substrate and increase or decrease the down pressing force according to the relative displacement state, so as to adjust the distribution of the crack front line. A separating device includes a separating unit and a crack front line adjusting unit. The separating unit is adapted to separate the flexible film and the substrate. During the process of separating the flexible film from the substrate, a crack front line is formed between a ...more ...less
9
US2019057974A1
Publication/Patent Number: US2019057974A1
Publication date: 2019-02-21
Application number: 16/046,852
Filing date: 2018-07-26
Abstract: Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further includes a barrier structure extending vertically through the alternating layer stack to laterally separate the first region from the second region, multiple through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack, an array interconnection layer in contact with the through array contacts, a peripheral circuit formed on a second substrate. and a peripheral interconnection layer on the peripheral circuit. The array interconnection layer is bonded on the peripheral interconnection layer, such that the peripheral circuit is electrically connected with at least one through array contact. Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating ...more ...less
10
US10344049B2
Publication/Patent Number: US10344049B2
Publication date: 2019-07-09
Application number: 15/842,843
Filing date: 2017-12-14
Abstract: A compound and pharmaceutically acceptable salts thereof for treating cancer, having a structure represented by the following formula (I) or formula (II): in which X and Y each individually represent: R1, R2, R3, R4, and R5 individually represents hydrogen atom, acyl having 20 or less carbon atoms, alkyl having 20 or less carbon atoms, alkanoyl having 20 or less carbon atoms, aroyl having 20 or less carbon atoms, aryl having 20 or less carbon atoms, aralkyl having 20 or less carbon atoms, sulfonyl having 20 or less carbon atoms, phosphonyl having 20 or less carbon atoms, or haloacyl having 20 or less carbon atoms. A compound and pharmaceutically acceptable salts thereof for treating cancer, having a structure represented by the following formula (I) or formula (II): in which X and Y each individually represent: R1, R2, R3, R4, and R5 individually ...more ...less
11
EP3486338A1
Publication/Patent Number: EP3486338A1
Publication date: 2019-05-22
Application number: 16908436.5
Filing date: 2016-07-13
Abstract: Provided are a flaked tantalum powder and method for preparation thereof; said flaked tantalum powder contains 300-1800ppm of nitrogen, 10-100ppm of phosphorus, and 1-40ppm of boron. The flaked tantalum powder has high capacity and low leakage current, good puncture-resistance, and particularly outstanding high-frequency attributes. Doping with nitrogen during oxygen reduction is performed before three thermal treatments are carried out; the solution of performing three thermal treatments and a subsequent process improves the uniformity of distribution of elemental nitrogen and makes up for the deficiency of an oxide film, thereby increasing the pressure resistance of the product, and especially its high-frequency attributes. Provided are a flaked tantalum powder and method for preparation thereof; said flaked tantalum powder contains 300-1800ppm of nitrogen, 10-100ppm of phosphorus, and 1-40ppm of boron. The flaked tantalum powder has high capacity and low leakage current, good puncture-resistance ...more ...less
12
US10170434B2
Publication/Patent Number: US10170434B2
Publication date: 2019-01-01
Application number: 15/948,247
Filing date: 2018-04-09
Abstract: A package includes a bottom substrate and a bottom die over and bonded to the bottom substrate. A metal-particle-containing compound material is overlying a top surface of the bottom die, wherein the metal-particle-containing compound material comprises metal particles. A molding material molds at least a lower part of the bottom die therein, wherein the molding material is overlying the bottom substrate. A package includes a bottom substrate and a bottom die over and bonded to the bottom substrate. A metal-particle-containing compound material is overlying a top surface of the bottom die, wherein the metal-particle-containing compound material comprises metal particles. A ...more ...less
13
US10325853B2
Publication/Patent Number: US10325853B2
Publication date: 2019-06-18
Application number: 14/696,198
Filing date: 2015-04-24
Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias. A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and ...more ...less