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1
JP4392229B2
Publication/Patent Number: JP4392229B2
Publication date: 2009-12-24
Application number: 2003401281
Filing date: 2003-12-01
Abstract: PROBLEM TO BE SOLVED: To provide a wiring pattern forming method capable of preventing the occurrence of foreign substance residue on a peripheral part of a substrate. SOLUTION: The pattern forming method comprises the steps of forming a resist film 3 on an insulating film 2; forming a resist pattern 5 by exposing and developing the resist film 3; forming a wiring groove pattern 5a-5c in the insulating film 2 by etching through the resist pattern 5 as a mask; forming a plating film 9 on the insulating film 2; and forming a wiring pattern 9a-9c by polishing and removing the plating film 9 on the insulating film 2. In the step of forming the wiring groove pattern PROBLEM TO BE SOLVED: To provide a wiring pattern forming method capable of preventing the occurrence of foreign substance residue on a peripheral part of a substrate. SOLUTION: The pattern forming method comprises the steps of forming a resist film 3 on an insulating film 2; ...more ...less
2
JP4034896B2
Publication/Patent Number: JP4034896B2
Publication date: 2008-01-16
Application number: 34660198
Filing date: 1998-11-19
Abstract: PROBLEM TO BE SOLVED: To provid a high sensitivity and high resolution practical resist compsn. using a polymer having high transmittance to far UV of
3
JP2005032755A
Publication/Patent Number: JP2005032755A
Publication date: 2005-02-03
Application number: 2003192878
Filing date: 2003-07-07
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a groove pattern having a uniform thickness on a semiconductor substrate in which a hole pattern is formed. SOLUTION: A method for manufacturing a semiconductor device includes forming of a multilayer film 10 made of an SiOC film 2 having properties for discharging a base component and a TEOS film 3 on the semiconductor substrate 1 PROBLEM TO BE SOLVED: To provide a method for forming a groove pattern having a uniform thickness on a semiconductor substrate in which a hole pattern is formed. SOLUTION: A method for manufacturing a semiconductor device includes forming of a multilayer film 10 made of an SiOC ...more ...less
4
JP2005164803A
Publication/Patent Number: JP2005164803A
Publication date: 2005-06-23
Application number: 2003401281
Filing date: 2003-12-01
Abstract: PROBLEM TO BE SOLVED: To provide a wiring pattern forming method capable of preventing the occurrence of foreign substance residue on a peripheral part of a substrate. SOLUTION: The pattern forming method comprises the steps of forming a resist film 3 on an insulating film 2; forming a resist pattern 5 by exposing and developing the resist film 3; forming a wiring groove pattern 5a-5c in the insulating film 2 by etching through the resist pattern 5 as a mask; forming a plating film 9 on the insulating film 2; and forming a wiring pattern 9a-9c by polishing and removing the plating film 9 on the insulating film 2. In the step of forming the wiring groove pattern PROBLEM TO BE SOLVED: To provide a wiring pattern forming method capable of preventing the occurrence of foreign substance residue on a peripheral part of a substrate. SOLUTION: The pattern forming method comprises the steps of forming a resist film 3 on an insulating film 2; ...more ...less
5
JP2004085612A
Publication/Patent Number: JP2004085612A
Publication date: 2004-03-18
Application number: 2002242497
Filing date: 2002-08-22
Inventor: Katsuyama, Akiko  
Abstract: PROBLEM TO BE SOLVED: To provide a halftone phase shift mask which can form a pattern with favorable exposure latitude and no pattern abnormality. SOLUTION: The halftone phase shift mask has a mask pattern formed on a translucent substrate 13. The mask pattern comprises a translucent pattern region 11 and a light shielding pattern region 12. The translucent pattern region 11 has one minimum in the distribution of the transmission intensity of light in the shorter side direction. The light shielding pattern 12 has two minima in the distribution of the transmission intensity of light in the shorter side direction when it is assumed that the pattern 12 has the translucency equal to that of the above translucent pattern region 11. COPYRIGHT: (C)2004 PROBLEM TO BE SOLVED: To provide a halftone phase shift mask which can form a pattern with favorable exposure latitude and no pattern abnormality. SOLUTION: The halftone phase shift mask has a mask pattern formed on a translucent substrate 13. The mask pattern comprises a ...more ...less
6
JP2004087628A
Publication/Patent Number: JP2004087628A
Publication date: 2004-03-18
Application number: 2002244257
Filing date: 2002-08-23
Inventor: Katsuyama, Akiko  
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern where crack is prevented when forming a minute pattern using a resist containing resin based containing no benzene ring in a main chain such as acryl resin and an acid forming agent. SOLUTION: A resist film 1 is made of the resist containing the acryl resin and the acid forming agent and the resist film 1 is partially exposed 4 with an ArF excimer laser for generating acid. Thereafter PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern where crack is prevented when forming a minute pattern using a resist containing resin based containing no benzene ring in a main chain such as acryl resin and an acid forming agent. SOLUTION: A resist film 1 ...more ...less
7
JP2004166754A
Publication/Patent Number: JP2004166754A
Publication date: 2004-06-17
Application number: 2002333050
Filing date: 2002-11-18
Abstract: PROBLEM TO BE SOLVED: To provide an upper limb support device adapted to either paralysis of left/right limbs when supporting a unilaterally paralyzed upper limb
8
US6673523B2
Publication/Patent Number: US6673523B2
Publication date: 2004-01-06
Application number: 09/520,805
Filing date: 2000-03-08
Abstract: A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern. A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group ...more ...less
9
JP2004265990A
Publication/Patent Number: JP2004265990A
Publication date: 2004-09-24
Application number: 2003052845
Filing date: 2003-02-28
Abstract: PROBLEM TO BE SOLVED: To provide a method of forming wiring by which a desired wiring structure can be formed by preventing the fluctuation of the heights of resist plugs at the time of forming the wiring structure by using the dual damascene method. SOLUTION: In this method
10
JP2004031759A
Publication/Patent Number: JP2004031759A
Publication date: 2004-01-29
Application number: 2002187590
Filing date: 2002-06-27
Abstract: PROBLEM TO BE SOLVED: To assure reliable embedment of a wire in an interlayer insulating film made of a material containing inpurity of a basic compound. SOLUTION: An interlayer insulating film 14 is formed on a semiconductor substrate 11 and is provided with a hole 14a
11
JP3578260B2
Publication/Patent Number: JP3578260B2
Publication date: 2004-10-20
Application number: 36004698
Filing date: 1998-12-03
Abstract: PROBLEM TO BE SOLVED: To obtain a resist material showing heat resistance and high resolution by using a polymer which comprises a p-ethoxystyrene unit
12
JP3602491B2
Publication/Patent Number: JP3602491B2
Publication date: 2004-12-15
Application number: 2001336892
Filing date: 2001-11-01
Abstract: PROBLEM TO BE SOLVED: To obtain a polymer for a chemical amplification type positive type resist which has high sensitivity
13
JP2003245110A
Publication/Patent Number: JP2003245110A
Publication date: 2003-09-02
Application number: 2002050658
Filing date: 2002-02-27
Inventor: Katsuyama, Akiko  
Abstract: PROBLEM TO BE SOLVED: To provide a walking stick aid capable of resolving inefficient actions among a variety of daily actions and allowing a person who has to spend a daily life relying on the walking stick to spend a life with the walking stick conveniently and efficiently. SOLUTION: The aid is provided with a loop of a strap by attaching a strap adjusting tool 3 enabling the person to adjust easily the length of the strap with such a length of enabling to hang on a shoulder of the person and by tying a knot 5 PROBLEM TO BE SOLVED: To provide a walking stick aid capable of resolving inefficient actions among a variety of daily actions and allowing a person who has to spend a daily life relying on the walking stick to spend a life with the walking stick conveniently and efficiently ...more ...less
14
JP3372874B2
Publication/Patent Number: JP3372874B2
Publication date: 2003-02-04
Application number: 25659098
Filing date: 1998-09-10
Inventor: Katsuyama, Akiko  
Abstract: PROBLEM TO BE SOLVED: To obtain a good pattern profile in a pattern forming method by which a chemically amplifying resist film is exposed to exposure light of
15
EP1143296A3
Publication/Patent Number: EP1143296A3
Publication date: 2003-12-17
Application number: 01113822.9
Filing date: 1996-03-06
Abstract: A method for forming a pattern, comprising:a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when an impurity concentration within the environment for forming a resist pattern is larger than a predetermined value but setting the humidity at a high level when the impurity concentration within the enviroment for forming a resist pattern is smaller than the predetermined value;a second step of forming a resist film by coating a substrate with a resist;a third step of exposing the resist film through a mask within the environment with the humidity set at the first step; anda forth step of developing the exposed resist film to thereby form a resist pattern. A method for forming a pattern, comprising:a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when an impurity concentration within the environment for forming a resist pattern is larger than a predetermined value but setting the ...more ...less
16
EP1143297A3
Publication/Patent Number: EP1143297A3
Publication date: 2003-12-10
Application number: 01113823.7
Filing date: 1996-03-06
Abstract: A method for forming a pattern, comprising:a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but setting the humidity at a high level when the profile of the resist pattern tends to be a round-shoulder profile as compared with the reference pattern profile;a second step of forming a resist film by coating a substrate with a resist;a third step of exposing said resist film through a mask in an environment with the humidity set at said first step; anda fourth step of developing said resist film which is exposed to thereby form a resist pattern. A method for forming a pattern, comprising:a first step of setting the humidity in an enviroment for forming a resist pattern at a low level when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but setting the humidity ...more ...less
17
US6528240B1
Publication/Patent Number: US6528240B1
Publication date: 2003-03-04
Application number: 09/523,200
Filing date: 2000-03-10
Abstract: A resist film is formed by applying, on a semiconductor substrate, a resist material including a base polymer having a sulfonyl group on a side chain. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and is developed with a developer after the pattern exposure, thereby forming a resist pattern. A resist film is formed by applying, on a semiconductor substrate, a resist material including a base polymer having a sulfonyl group on a side chain. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern ...more ...less
18
US20030091941A1
Publication/Patent Number: US20030091941A1
Publication date: 2003-05-15
Application number: 10/164,425
Filing date: 2002-06-10
Abstract: A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern. A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group ...more ...less
19
EP1335246A1
Publication/Patent Number: EP1335246A1
Publication date: 2003-08-13
Application number: 03004858.1
Filing date: 2000-06-20
Abstract: The pattern formation material of this invention includes a base polymer having a unit represented by the following General Formula 1:    wherein R0 is an alkyl group; R1 is a group that is decomposed through irradiation of light; and R3 and R4 are the same or different and selected from the group consisting of hydrogen and compounds including hydrogen and carbon. The pattern formation material of this invention includes a base polymer having a unit represented by the following General Formula 1:    wherein R0 is an alkyl group; R1 is a group that is decomposed through irradiation of light; and R3 and R4 are the same or different and s ...more ...less
20
JP3415799B2
Publication/Patent Number: JP3415799B2
Publication date: 2003-06-09
Application number: 2000036178
Filing date: 2000-02-15
Abstract: PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having a sulfonic ester in a side chain is applied on a semiconductor substrate 10 to form a resist film 11. This resist film 11 is patternwise exposed by irradiation with F2 excimer laser light 13 having 157 nm wavelength through a mask 12 and the patternwise exposed resist film 11 is developed with a developing solution to form the objective resist pattern 14. PROBLEM TO BE SOLVED: To obtain a good pattern shape when a resist pattern is formed using light having a wavelength in the range of 1-180 nm as light for exposure. SOLUTION: A resist material with a base resin having a sulfonic ester in a side chain is applied on a ...more ...less