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1
JP2014179354A
Publication/Patent Number: JP2014179354A
Publication date: 2014-09-25
Application number: 2011146286
Filing date: 2011-06-30
Inventor: Kishimura, Shinji  
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion film element capable of improving sensitivity while preventing or suppressing film thickness change or cracks of the photoelectric conversion film caused by level differences of pixel electrodes.SOLUTION: The photoelectric conversion film element includes: a plurality of first electrodes 21 arranged on a substrate; a planarization layer 22 that is composed of a spherical semiconductor material PROBLEM TO BE SOLVED: To provide a photoelectric conversion film element capable of improving sensitivity while preventing or suppressing film thickness change or cracks of the photoelectric conversion film caused by level differences of pixel electrodes.SOLUTION: The ...more ...less
2
WO2013001780A1
Publication/Patent Number: WO2013001780A1
Publication date: 2013-01-03
Application number: 2012004098
Filing date: 2012-06-25
Inventor: Kishimura, Shinji  
Abstract: A photoelectric conversion film element comprises: a plurality of pixel electrodes (21) which are arrayed separately from one another upon a substrate; a leveled layer (22)
3
JP4958496B2
Publication/Patent Number: JP4958496B2
Publication date: 2012-06-20
Application number: 2006211829
Filing date: 2006-08-03
Abstract: PROBLEM TO BE SOLVED: To provide a resist material excellent in transmittance to exposure light of 300 nm or shorter wavelength as well as substrate adhesion and developer dissolvability. SOLUTION: This resist material is adaptable to microfabrication technology and the base resin thereof comprises a polymer compound containing recurring units composed of a first unit containing a sulfonamide group with same or different substituents being a hydrogen atom PROBLEM TO BE SOLVED: To provide a resist material excellent in transmittance to exposure light of 300 nm or shorter wavelength as well as substrate adhesion and developer dissolvability. SOLUTION: This resist material is adaptable to microfabrication technology and the base ...more ...less
4
JP4623315B2
Publication/Patent Number: JP4623315B2
Publication date: 2011-02-02
Application number: 2006247855
Filing date: 2006-09-13
Abstract: PROBLEM TO BE SOLVED: To provide a resist material not only having excellent transparency of vacuum ultraviolet rays of ≤300 nm
5
JP4687913B2
Publication/Patent Number: JP4687913B2
Publication date: 2011-05-25
Application number: 2007123045
Filing date: 2007-05-08
Abstract: PROBLEM TO BE SOLVED: To provide a resist composition which is sensitive to high-energy radiations
6
JP4516250B2
Publication/Patent Number: JP4516250B2
Publication date: 2010-08-04
Application number: 2001277597
Filing date: 2001-09-13
Abstract: PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape with little occurrence of scum when a resist pattern is formed using light for exposure having a wavelength of
7
CN101673051A
Publication/Patent Number: CN101673051A
Publication date: 2010-03-17
Application number: 200910128224
Filing date: 2002-09-12
Abstract: A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2 and
8
TWI329784B
Publication/Patent Number: TWI329784B
Publication date: 2010-09-01
Application number: 94102514
Filing date: 2005-01-27
Abstract: A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency
9
JP4522628B2
Publication/Patent Number: JP4522628B2
Publication date: 2010-08-11
Application number: 2001362667
Filing date: 2001-11-28
Abstract: PROBLEM TO BE SOLVED: To provide an ester compound or a photoresist material by using a polymer having an excellent transparency
10
JP4525912B2
Publication/Patent Number: JP4525912B2
Publication date: 2010-08-18
Application number: 2005015496
Filing date: 2005-01-24
Abstract: PROBLEM TO BE SOLVED: To provide a resist material excellent in the transmissivity of far ultraviolet rays with a wavelength of 300 nm or below
11
US7588876B2
Publication/Patent Number: US7588876B2
Publication date: 2009-09-15
Application number: 11/128,441
Filing date: 2005-05-13
Abstract: A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol. A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a ...more ...less
12
JP4258645B2
Publication/Patent Number: JP4258645B2
Publication date: 2009-04-30
Application number: 2004168247
Filing date: 2004-06-07
Abstract: PROBLEM TO BE SOLVED: To provide a novel fluorine containing polymer compound useful as a base resin for radiation sensitivity resist excellent in properties such as transparency to radiations at wave length of 200 nm or less
13
JP4240202B2
Publication/Patent Number: JP4240202B2
Publication date: 2009-03-18
Application number: 2003032584
Filing date: 2003-02-10
Abstract: PROBLEM TO BE SOLVED: To provide a new polymer useful as a resist material having excellent transmittance in vacuum ultraviolet rays such as ≤300 nm
14
JP4235810B2
Publication/Patent Number: JP4235810B2
Publication date: 2009-03-11
Application number: 2003363134
Filing date: 2003-10-23
Abstract: PROBLEM TO BE SOLVED: To obtain a new fluoropolymeric compound excellent in transparency to radiations of ≤200 nm wavelength
15
TWI310481B
Publication/Patent Number: TWI310481B
Publication date: 2009-06-01
Application number: 93102954
Filing date: 2004-02-09
Abstract: A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group
17
JP4210862B2
Publication/Patent Number: JP4210862B2
Publication date: 2009-01-21
Application number: 2006123344
Filing date: 2006-04-27
Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method in which wettability of a developer is excellent and with which no defect etc. is produced after development
18
JP4255633B2
Publication/Patent Number: JP4255633B2
Publication date: 2009-04-15
Application number: 2001346959
Filing date: 2001-11-13
Abstract: PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high energy beams and excellent in the sensitivity at a wavelength of 200 nm or less
19
CN100368443C
Publication/Patent Number: CN100368443C
Publication date: 2008-02-13
Application number: 200410080711
Filing date: 2004-10-08
20
TWI304412B
Publication/Patent Number: TWI304412B
Publication date: 2008-12-21
Application number: 92106666
Filing date: 2003-03-25
Abstract: A resist composition comprising a base polymer having sulfone or sulfonate units introduced therein is sensitive to high-energy radiation below 300 nm