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1
US20190022964A1
Publication/Patent Number: US20190022964A1
Publication date: 2019-01-24
Application number: 16/138,735
Filing date: 2018-09-21
Abstract: A production method of a V-belt uses a belt mold having a plurality of compression layer-shape grooves arranged adjacent to one another in a groove width direction. A shaped structure having a plurality of ridges on an outer peripheral surface is crosslinked and combined with a fabric material to form a belt slab, while the compression layer-forming portions, which are the ridges covered with the fabric material, being fitted in the respective compression layer-shape grooves of the belt mold. The belt slab is cut into ring-shaped pieces such that one ring-shaped piece corresponds to one compression layer-forming portion. A production method of a V-belt uses a belt mold having a plurality of compression layer-shape grooves arranged adjacent to one another in a groove width direction. A shaped structure having a plurality of ridges on an outer peripheral surface is crosslinked and combined with a ...more ...less
2
US20190082566A1
Publication/Patent Number: US20190082566A1
Publication date: 2019-03-14
Application number: 16/124,641
Filing date: 2018-09-07
Abstract: A component mounting device configured to mount an axial component on a substrate, comprising: a movable forming-die; a fixed forming-die; a mounting head; and a distance adjustment portion, wherein the distance adjustment portion makes an adjustment such that when the movable forming-die delivers the axial component to the mounting head the distance between the claws is larger than a distance of the fixed forming-die. A component mounting device configured to mount an axial component on a substrate, comprising: a movable forming-die; a fixed forming-die; a mounting head; and a distance adjustment portion, wherein the distance adjustment portion makes an adjustment such that when the movable ...more ...less
3
US20190133007A1
Publication/Patent Number: US20190133007A1
Publication date: 2019-05-02
Application number: 16/161,051
Filing date: 2018-10-16
Abstract: A component supply device includes a transport path that guides a component connected body from a component insertion port on an upstream side in a component feeding direction to a component supply position on a downstream side, the component connected body including a plurality of axial components arranged and connected at a predetermined pitch, the plurality of axial components each having a lead, and a feed mechanism that pitch-feeds the component connected body along the transport path to the downstream side. The feed mechanism includes a feed member which has a plurality of feed hooks disposed at the predetermined pitch along the component feeding direction, a rotating shaft which is connected to one end side of the feed member, and a moving mechanism which is connected to the feed member through the rotating shaft and reciprocates the rotating shaft along the component feeding direction. A length of one feed hook among the plurality of feed hooks is longer than a length of an other feed hook among the plurality of feed hooks, the other feed hook being adjacent to the one feed hook on the rotating shaft side. A component supply device includes a transport path that guides a component connected body from a component insertion port on an upstream side in a component feeding direction to a component supply position on a downstream side, the component connected body including a plurality ...more ...less
4
US10211219B2
Publication/Patent Number: US10211219B2
Publication date: 2019-02-19
Application number: 15/666,653
Filing date: 2017-08-02
Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state. A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile ...more ...less
5
US20190148404A1
Publication/Patent Number: US20190148404A1
Publication date: 2019-05-16
Application number: 16/245,271
Filing date: 2019-01-11
Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state. A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile ...more ...less