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1
US9917066B2
Publication/Patent Number: US9917066B2
Publication date: 2018-03-13
Application number: 14/332,394
Filing date: 2014-07-16
Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip. A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first ...more ...less
2
US9291889B2
Publication/Patent Number: US9291889B2
Publication date: 2016-03-22
Application number: 14/316,602
Filing date: 2014-06-26
Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern. An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and ...more ...less
3
US9046783B2
Publication/Patent Number: US9046783B2
Publication date: 2015-06-02
Application number: 13/856,836
Filing date: 2013-04-04
Abstract: A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position. A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate ...more ...less
4
US20140308604A1
Publication/Patent Number: US20140308604A1
Publication date: 2014-10-16
Application number: 14/316,602
Filing date: 2014-06-26
Abstract: An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern. An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and ...more ...less
5
US20140327157A1
Publication/Patent Number: US20140327157A1
Publication date: 2014-11-06
Application number: 14/332,394
Filing date: 2014-07-16
Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip. A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first ...more ...less
6
US20130260293A1
Publication/Patent Number: US20130260293A1
Publication date: 2013-10-03
Application number: 13/856,836
Filing date: 2013-04-04
Abstract: A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position. A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate ...more ...less
7
WO2013145044A1
Publication/Patent Number: WO2013145044A1
Publication date: 2013-10-03
Application number: 2012006929
Filing date: 2012-10-29
Abstract: A photomask (101) comprises a translucent substrate (104) and a light-shielding film (102) which is formed on the translucent substrate (104) and has a light-shielding section (102a) and an opening (102b) forming a translucent region. A plurality of excavated parts (104a) is formed at an exposed region in the opening (102b) of the translucent substrate (104). The plurality of excavated parts (104a) is formed such that each width thereof becomes larger as the width is farther away from the focal point so that the light passing through the plurality of excavated parts (104a) is focused at a prescribed point. A photomask (101) comprises a translucent substrate (104) and a light-shielding film (102) which is formed on the translucent substrate (104) and has a light-shielding section (102a) and an opening (102b) forming a translucent region. A plurality of excavated parts (104a) is ...more ...less
8
WO2013121485A1
Publication/Patent Number: WO2013121485A1
Publication date: 2013-08-22
Application number: 2012007415
Filing date: 2012-11-19
Abstract: An aperture width of a main pattern (2) formed in a light blocking film (1) is a width with which
9
TWI394762B
Publication/Patent Number: TWI394762B
Publication date: 2013-05-01
Application number: 95103181
Filing date: 2006-01-26
Abstract: A fluorinated polymer comprising recurring units of formulae (1a) to (1d) and having a Mw of 1
10
WO2013118426A1
Publication/Patent Number: WO2013118426A1
Publication date: 2013-08-15
Application number: 2013000071
Filing date: 2013-01-11
Abstract: Provided are a lamination structure and a lamination method
11
TWI382280B
Publication/Patent Number: TWI382280B
Publication date: 2013-01-11
Application number: 95126966
Filing date: 2006-07-24
Abstract: A resist protective coating material is provided comprising an α -trifluoromethylacrylic acid/norbornene copolymer having cyclic perfluoroalkyl groups as pendant. In a pattern-forming process
12
US8268535B2
Publication/Patent Number: US8268535B2
Publication date: 2012-09-18
Application number: 13/085,232
Filing date: 2011-04-12
Abstract: After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern. After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the ...more ...less
13
US8088565B2
Publication/Patent Number: US8088565B2
Publication date: 2012-01-03
Application number: 12/749,289
Filing date: 2010-03-29
Abstract: An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens.
14
US20120009795A1
Publication/Patent Number: US20120009795A1
Publication date: 2012-01-12
Application number: 13/237,657
Filing date: 2011-09-20
Abstract: A resist film (102) made of a chemically amplified resist material including a polymer containing an acid leaving group and a group in which a lactone is replaced with hydrogen in an OH group of phenol is formed on a substrate (101). The resist film (102) is then selectively irradiated with exposure light, thereby performing pattern exposure. After the pattern exposure, the resist film (102) is heated, and then developed, thereby forming a resist pattern (102a) out of the resist film (102). A resist film (102) made of a chemically amplified resist material including a polymer containing an acid leaving group and a group in which a lactone is replaced with hydrogen in an OH group of phenol is formed on a substrate (101). The resist film (102) is then selectively ...more ...less