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1
US2005018211A1
Publication/Patent Number: US2005018211A1
Publication date: 2005-01-27
Application number: 10/622,545
Filing date: 2003-07-21
Inventor: Huang, Yi-shih  
Abstract: A length measure apparatus and the method for measuring transform an image from a lens set into a digital contrast image via a central processing unit. The CPU has multiple standard lines that are previously set therein. Multiple movement controllers control a movement of a selected standard line from the CPU relative to the digital contrast image. A movement value is output when the selected standard line flushes with a profile of the contrast image. The measure value is shown on a monitor when the CPU contrasts the movement of the selected standard line. A length measure apparatus and the method for measuring transform an image from a lens set into a digital contrast image via a central processing unit. The CPU has multiple standard lines that are previously set therein. Multiple movement controllers control a movement of a ...more ...less
2
US2005018171A1
Publication/Patent Number: US2005018171A1
Publication date: 2005-01-27
Application number: 10/877,262
Filing date: 2004-06-25
Abstract: The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 μm. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid of their specific ellipsometric parameters. The invention relates to a method for noninvasively characterizing embedded micropatterns which are hidden under the surface of a wafer down to 100 μm. The micropatterns are identified with reference micropatterns from a previously produced reference library with the aid ...more ...less
3
US2004021877A1
Publication/Patent Number: US2004021877A1
Publication date: 2004-02-05
Application number: 10/212,832
Filing date: 2002-08-05
Inventor: Clark, Bryan Kevin  
Abstract: A method and system for determining dimensions of optically recognizable features provides a low-cost and efficient high speed/high resolution measurement system for determining surface feature dimensions. Multiple imaging subsystems are arranged at predetermined differing angles above a surface under test. A scanning subsystem moves either the imaging subsystems or the surface under test and a processor coupled to the imaging subsystems determines the height of a surface feature by determining the deviations between the outputs of the imaging systems as an edge of the surface feature passes within the optical paths of the imaging subsystems. A method and system for determining dimensions of optically recognizable features provides a low-cost and efficient high speed/high resolution measurement system for determining surface feature dimensions. Multiple imaging subsystems are arranged at predetermined differing ...more ...less
4
US2004141188A1
Publication/Patent Number: US2004141188A1
Publication date: 2004-07-22
Application number: 10/347,907
Filing date: 2003-01-21
Abstract: A system for precision testing of fiber length and the like using electrostatic collection and control of fibers. The system comprises two spaced-apart and longitudinal extending electrode plates wherein one electrode plate has a positive charge and the other electrode plate is grounded or has a negative charge. An endless rotating belt extends between and parallel to the electrode plates, and the rotating belt is positioned next adjacent and in contact with or in close proximity to one of the two spaced-apart electrode plates such that the distance between the belt and the other electrode plate is greater than the length of fibers to be tested. A fiber introduction system is provided to introduce a plurality of individual fibers above the two electrode plates such that the fibers will adhere to the belt and the other ends of the fibers are attracted to the other electrode plate and thereby straightened. An imaging system is provided above the belt to generate image data corresponding to the length of individual fibers being transported by the rotating belt, and a data processor serves to analyze the image data to determine the length of fibers passing beneath the imaging system. A system for precision testing of fiber length and the like using electrostatic collection and control of fibers. The system comprises two spaced-apart and longitudinal extending electrode plates wherein one electrode plate has a positive charge and the other electrode plate is ...more ...less
5
US2004239917A1
Publication/Patent Number: US2004239917A1
Publication date: 2004-12-02
Application number: 10/802,338
Filing date: 2004-03-18
Inventor: Loen, Mark Vincent  
Abstract: A device and method is disclosed that measures the angular orientation of one surface to another. The device consists of two frames with defined measuring points. The relative distances between the points are measured and then used to determine the angular orientation of the surfaces relative to each other. The measuring method is adapted for the accurate measurement of very small angular differences. The frames can be adapted to measure angular orientation of many surfaces that are otherwise difficult to measure. The device is particularly suited to measuring small parallel angular differences between two rolls. A device and method is disclosed that measures the angular orientation of one surface to another. The device consists of two frames with defined measuring points. The relative distances between the points are measured and then used to determine the angular orientation of the ...more ...less
6
US2004040380A1
Publication/Patent Number: US2004040380A1
Publication date: 2004-03-04
Application number: 10/397,326
Filing date: 2003-03-27
Inventor: Wolf, Robert Gregory  
Abstract: An automated metrology system for photoacoustic measurement of single or multi-layer films, and a method of making the system, are disclosed. Dramatic improvements in the cost of ownership of the system is attained by making the system scalable from a system having a single metrology sub-system for making measurements, to a system having two, vertically stacked metrology sub-systems for making independent measurements. A front end of the system for storing multiple cassettes comprises a robot having vertical travel capable of transferring cassettes to and from each of the first and second metrology sub-systems in the case the system is expanded. The two metrology sub-systems are preferably identical and share much of the optics, a computer as well as the front end of the system. Throughput of the dual system is 1.75-2 times greater than that of a single tool metrology system while the cost is substantially less than two complete single tool metrology systems. An automated metrology system for photoacoustic measurement of single or multi-layer films, and a method of making the system, are disclosed. Dramatic improvements in the cost of ownership of the system is attained by making the system scalable from a system having a single ...more ...less
7
US2004160612A1
Publication/Patent Number: US2004160612A1
Publication date: 2004-08-19
Application number: 10/482,443
Filing date: 2003-12-29
Abstract: A device is provided for spatially resolved measurement of the thickness of a layer located on a sample carrier (7), said device comprising a light source (1-3) emitting polychromatic radiation with a predetermined spectral composition, illumination optics (4-6) illuminating the sample carrier (7) with radiation from the light source (1-3), detector optics (6, 5, 8) picking up radiation reflected by a line-shaped portion of the sample carrier (7) and guiding said radiation to a polychromator (9, 11) as a line-shaped beam, said polychromator (9, 11) separating the line-shaped beam into a field-shaped spectrum, and a camera (12), which receives the field-shaped spectrum, the polychromator (9, 11) being tuned to the spectral composition of the radiation from the light source. A device is provided for spatially resolved measurement of the thickness of a layer located on a sample carrier (7), said device comprising a light source (1-3) emitting polychromatic radiation with a predetermined spectral composition, illumination optics (4-6) illuminating the ...more ...less
8
US2004004730A1
Publication/Patent Number: US2004004730A1
Publication date: 2004-01-08
Application number: 10/189,052
Filing date: 2002-07-02
Abstract: A method for measuring a dielectric layer thickness calibration reference standard including providing a substrate having a dielectric layer for calibrating a dielectric layer thickness measuring tool; cleaning the dielectric layer according to a cleaning process including at least one of spraying and scrubbing; and, measuring the thickness of the dielectric layer with the dielectric layer thickness measuring tool including at least one portion of the dielectric layer displaced from the substrate center. A method for measuring a dielectric layer thickness calibration reference standard including providing a substrate having a dielectric layer for calibrating a dielectric layer thickness measuring tool; cleaning the dielectric layer according to a cleaning process including at ...more ...less
9
US2003025899A1
Publication/Patent Number: US2003025899A1
Publication date: 2003-02-06
Application number: 09/883,512
Filing date: 2001-06-18
Abstract: A beam deflection technique for simultaneous measurements of the thickness, refractive index and optical absorption of transparent materials using a charge coupled device (CCD) camera is provided. The method comprises measuring beam deflection after transmission through or reflection off a sample of interest at variable incidence angles to the sample surface. The measurement of beam deflection as a function of incident angle is related through Snell's Law directly to the sample thickness and sample index of refraction. A beam deflection technique for simultaneous measurements of the thickness, refractive index and optical absorption of transparent materials using a charge coupled device (CCD) camera is provided. The method comprises measuring beam deflection after transmission through or ...more ...less
10
US2003038951A1
Publication/Patent Number: US2003038951A1
Publication date: 2003-02-27
Application number: 10/080,543
Filing date: 2002-02-25
Abstract: The present invention relates to an apparatus for measuring the thickness of materials using the focal length of a lensed fiber and a method thereof. More particularly, the invention relates to a method of measuring the thickness of materials using the strength of the beam reflected from the focal length when the beam emitted from a lensed fiber is focused on a material. According to the present invention, the lensed fiber generates a form of Gaussian Beam and is attached to PZT 12 in order to detect the quantity of beam while the lensed fiber is moved vertically against the material to be measured. The present invention relates to an apparatus for measuring the thickness of materials using the focal length of a lensed fiber and a method thereof. More particularly, the invention relates to a method of measuring the thickness of materials using the strength of the beam ...more ...less
11
US2003123068A1
Publication/Patent Number: US2003123068A1
Publication date: 2003-07-03
Application number: 10/329,875
Filing date: 2002-12-26
Inventor: Ackermann, Gunter  
Abstract: A device for controlling at least one cut in an inner wrapping (“inner liner”) for a group of cigarettes in a cigarette packaging machine comprises at least one optical detector consisting of a light source and a sensor.
12
US2003193672A1
Publication/Patent Number: US2003193672A1
Publication date: 2003-10-16
Application number: 10/389,751
Filing date: 2003-03-18
Abstract: A method for measuring a relative thickness distribution of an organic thin film for use in an organic electroluminescence device comprises the steps of irradiating a predetermined region of the organic thin film with a light including an ultraviolet light, measuring the intensity of a fluorescence produced by the organic thin film in response to the light irradiation, and obtaining a film thickness of the predetermined region from the intensity of the fluorescence. Further, an apparatus for measuring a thickness distribution for use in an organic electroluminescence device has means for irradiating a predetermined region of the organic thin film with a light including an ultraviolet light, means for measuring the intensity of a fluorescence produced by the organic thin film, and means for obtaining the film thickness of the predetermined region from the intensity of the fluorescence. A method for measuring a relative thickness distribution of an organic thin film for use in an organic electroluminescence device comprises the steps of irradiating a predetermined region of the organic thin film with a light including an ultraviolet light, measuring the ...more ...less
13
US2003160972A1
Publication/Patent Number: US2003160972A1
Publication date: 2003-08-28
Application number: 10/080,432
Filing date: 2002-02-22
Abstract: A method and an apparatus for measuring thicknesses of ultra-thin gate oxide layers are provided. In the method, a substrate that has a thin gate oxide layer formed on top is first heat treated at a temperature between about 400° C. and about 800° C. under a sub-atmospheric pressure for at least 10 seconds. The substrate is then immediately transferred, i.e., within 10 minutes, to a thickness measuring device for the accurate measurement of the thickness of the gate oxide layer. The apparatus can be provided by mounting a heating chamber juxtaposed to a thickness measuring device, such as an ellipsometer so that substrate can be immediately transferred therein between after a heat treatment step is completed. The heat treatment step of the present invention novel method is efficient in preventing the deposition of moisture and organic residue onto the surface of the thin gate oxide layer. A method and an apparatus for measuring thicknesses of ultra-thin gate oxide layers are provided. In the method, a substrate that has a thin gate oxide layer formed on top is first heat treated at a temperature between about 400° C. and about 800° C. under a ...more ...less
14
US2003053081A1
Publication/Patent Number: US2003053081A1
Publication date: 2003-03-20
Application number: 09/905,749
Filing date: 2001-07-12
Abstract: The present invention provides a method for monitoring a modifying-process taking place in a thin-film sample and thereby characterizing the sample thus modified, wherein the modifying-process is performed for purpose of improving physical properties of the sample. The present invention further provides a monitoring tool for characterizing various thin-film processes. Advantages of the method of the present invention are manifest in its non-intrusive nature, fast (or real-time) response, robust sensitivity, and versatility in a variety of thin-film processes. Another inherent advantage of the present invention is that an assortment of the “n&k” parameters can be obtained by using only measurement tool, in contrast to two (or more) simultaneous measurement tools used in the prior art. The present invention provides a method for monitoring a modifying-process taking place in a thin-film sample and thereby characterizing the sample thus modified, wherein the modifying-process is performed for purpose of improving physical properties of the sample. The present ...more ...less
15
US2002135784A1
Publication/Patent Number: US2002135784A1
Publication date: 2002-09-26
Application number: 10/092,866
Filing date: 2002-03-06
Abstract: Disclosed are methods and apparatus for reducing thermal loading of a film disposed on a surface of a sample, such as a semiconductor wafer, while obtaining a measurement of a thickness of the film in an area about a measurement site. The method includes steps of (a) bringing an optical assembly of the measurement system into focus; (b) aligning a beam spot with the measurement site; (c) turning on one of a dither EOM or a dither AOM or a piezo-electric dither assembly to sweep the beam spot in an area about the measurement site, thereby reducing the thermal loading within the measurement site; (d) making a measurement by obtaining a signal representing an average for the film under the area; (e) recording the measurement data; and (f) analyzing the measurement data to determine an average film thickness in the measurement area. Disclosed are methods and apparatus for reducing thermal loading of a film disposed on a surface of a sample, such as a semiconductor wafer, while obtaining a measurement of a thickness of the film in an area about a measurement site. The method includes steps of (a) bringing an ...more ...less
16
US2002135785A1
Publication/Patent Number: US2002135785A1
Publication date: 2002-09-26
Application number: 10/147,809
Filing date: 2002-05-20
Inventor: Eriguchi, Koji  
Abstract: There is provided a clustered device for manufacturing a semiconductor device in which a cleaning chamber, a rapid thermal processing chamber, an optical measurement chamber, and the like are arranged around a load-lock room. In an optical measurement system, there are disposed an exciting light source, a measuring light source, a light detector, a control/analyze system, and the like. During the formation of an oxide film, for example, a wafer is cleaned in the cleaning chamber and then the amount of a natural oxide film remaining on the wafer or the like is measured by optical modulation reflectance spectroscopy in the optical measurement chamber. Thereafter, the wafer is oxidized in the rapid thermal processing chamber. As a result, the surface of the wafer is prevented from being oxidized on exposure to an atmosphere and the surface state of the wafer can be monitored in the course of sequential process steps. By measuring the thickness of a film on a semiconductor region by optical evaluation in the clustered manufacturing device, the manufacturing process using the clustered device can be controlled. There is provided a clustered device for manufacturing a semiconductor device in which a cleaning chamber, a rapid thermal processing chamber, an optical measurement chamber, and the like are arranged around a load-lock room. In an optical measurement system, there are disposed ...more ...less
17
US2002021436A1
Publication/Patent Number: US2002021436A1
Publication date: 2002-02-21
Application number: 09/902,882
Filing date: 2001-08-24
Inventor: Sacher, Joachim  
Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached. In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the ...more ...less
18
US2002089676A1
Publication/Patent Number: US2002089676A1
Publication date: 2002-07-11
Application number: 09/558,877
Filing date: 2000-04-26
Abstract: An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity. An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a ...more ...less
19
US2002005958A1
Publication/Patent Number: US2002005958A1
Publication date: 2002-01-17
Application number: 09/897,388
Filing date: 2001-07-03
Inventor: Sekiya, Kazuma  
Assignee: